• JSTS:Journal of Semiconductor Technology and Science
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• v.14 no.5
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• pp.666-672
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• 2014

We have investigated the gate insulator effects on the electrical performance of p-type tin monoxide (SnO) thin-film transistors (TFTs). Various SnO TFTs are fabricated with different gate insulators of a thermal $SiO_2$, a plasma-enhanced chemical vapor deposition (PECVD) $SiO_x$, a $150^{\circ}C$-deposited PEVCD $SiO_x$, and a $300^{\circ}C$-deposited PECVD $SiO_x$. Among the devices, the one with the $150^{\circ}C$-deposited PEVCD $SiO_x$ exhibits the best electrical performance including a high field-effect mobility ($=4.86cm^2/Vs$), a small subthreshold swing (=0.7 V/decade), and a turn-on voltage around 0 (V). Based on the X-ray diffraction data and the localized-trap-states model, the reduced carrier concentration and the increased carrier mobility due to the small grain size of the SnO thin-film are considered as possible mechanisms, resulting in its high electrical performance.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.306.1-306.1
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• 2016

ZnO semiconductor material has been widely utilized in various applications in semiconductor device technology owing to its unique electrical and optical features. It is a promising as solar cell material, because of its low cost, n-type conductivity and wide direct band gap. In this work ZnO/Si heterojunctions were fabricated by using pulsed laser deposition. Vacuum chamber was evacuated to a base pressure of approximately $2{\times}10^{-6}Torr$. ZnO thin films were grown on p-Si (100) substrate at oxygen partial pressure from 5mTorr to 40mTorr. Growth temperature of ZnO thin films was set to 773K. A pulsed (10 Hz) Nd:YAG laser operating at a wavelength of 266 nm was used to produce a plasma plume from an ablated a ZnO target, whose density of laser energy was $10J/cm^2$. Thickness of all the thin films of ZnO was about 300nm. The optical property was characterized by photoluminescence and crystallinity of ZnO was analyzed by X-ray diffraction. For fabrication ZnO/Si heterojunction diodes, indium metal and Al grid patterns were deposited on back and front side of the solar cells by using thermal evaporator, respectively. Finally, current-voltage characteristics of the ZnO/Si structure were studied by using Keithly 2600. Under Air Mass 1.5 Global solar simulator with an irradiation intensity of $100mW/cm^2$, the electrical properties of ZnO/Si heterojunction photovoltaic devices were analyzed.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.247.1-247.1
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• 2016

Low-cost, high efficiency solar cells are tremendous interests for the realization of a renewable and clean energy source. ZnTe based solar cells have a possibility of high efficiency with formation of an intermediated energy band structure by impurity doping. In this work, ZnO/ZnTe:Cr and ZnO/i-ZnTe structures were fabricated by pulsed laser deposition (PLD) technique. A pulsed (10 Hz) Nd:YAG laser operating at a wavelength of 266 nm was used to produce a plasma plume from an ablated a ZnTe target, whose density of laser energy was 10 J/cm2. The base pressure of the chamber was kept at approximately $4{\times}10-7Torr$. ZnTe:Cr and i-ZnTe thin films with thickness of 210 nm were grown on p-Si substrate, respectively, and then ZnO thin films with thickness of 150 nm were grown on ZnTe:Cr layer under oxygen partial pressure of 3 mTorr. Growth temperature of all the films was set to $250^{\circ}C$. For fabricating ZnO/i-ZnTe and ZnO/ZnTe:Cr solar cells, indium metal and Ti/Au grid patterns were deposited on back and front side of the solar cells by using thermal evaporator, respectively. From the fabricated ZnO/ZnTe:Cr and ZnO/i-ZnTe solar cell, dark currents were measured by using Keithley 2600. Solar cell parameters were obtained under Air Mass 1.5 Global solar simulator with an irradiation intensity of 100 mW/cm2, and then the photoelectric conversion efficiency values of ZnO/ZnTe:Cr and ZnO/i-ZnTe solar cells were measured at 1.5 % and 0.3 %, respectively.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.427-427
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• 2016

Organic-inorganic hybrid perovskite have attracted significant attention as a new revolutionary light absorber for photovoltaic device due to its remarkable characteristics such as long charge diffusion lengths (100-1000nm), low recombination rate, and high extinction coefficient. Recently, power conversion efficiency of perovskite solar cell is above 20% that is approached to crystalline silicon solar cells. Planar heterojunction perovskite solar cells have simple device structure and can be fabricated low temperature process due to absence of mesoporous scaffold that should be annealed over 500 oC. However, in the planar structure, controlling perovskite film qualities such as crystallinity and coverage is important for high performances. Those controlling methods in one-step deposition have been reported such as adding additive, solvent-engineering, using anti-solvent, for pin-hole free perovskite layer to reduce shunting paths connecting between electron transport layer and hole transport layer. Here, we studied the effect of alkali metal halide to control the fabrication process of perovskite film. During the morphology determination step, alkali metal halides can affect film morphologies by intercalating with PbI2 layer and reducing $CH3NH3PbI3{\cdot}DMF$ intermediate phase resulting in needle shape morphology. As types of alkali metal ions, the diverse grain sizes of film were observed due to different crystallization rate depending on the size of alkali metal ions. The pin-hole free perovskite film was obtained with this method, and the resulting perovskite solar cells showed higher performance as > 10% of power conversion efficiency in large size perovskite solar cell as $5{\times}5cm$. X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), and inductively coupled plasma optical emission spectrometry (ICP-OES) are analyzed to prove the mechanism of perovskite film formation with alkali metal halides.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.212-212
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• 2016

2차원 탄소나노재료인 그래핀은 우수한 물성으로 인하여 광범위한 분야로 응용이 가능할 것으로 예상되어 많은 주목을 받아왔다. 이러한 그래핀의 응용가능성을 실현시키기 위해서는 보다 손쉽고 신뢰할 수 있는 합성방법의 개발이 필요한 실정이다. 그래핀의 합성 방법들로 흑연을 물리적 및 화학적으로 박리하거나, 특정 결정표면 위에 방향성 성장의 흑연화를 통한 합성, 그리고 열화학기상증착법(Thermal chemical vapor deposition; T-CVD) 등의 합성방법들이 제기되었다. 이중 T-CVD법은 대면적으로 두께의 균일성이 높은 그래핀을 합성하기 위한 가장 적합한 방법으로 알려져 있다. 그러나 일반적으로 T-CVD공정은 원료 가스인 탄화수소가스를 효율적으로 분해하기 위하여 $1000^{\circ}C$부근의 온공정이 요구되며, 이는 산업적인 응용의 측면에서 그래핀의 접근성을 제한한다. 따라서 대면적으로 고품질의 그래핀을 저온합성 할 수 있는 공정의 개발은 필수적이다. 본 연구에서는, 플라즈마를 이용하여 원료가스를 효율적으로 분해함으로써 그래핀의 저온합성을 도모하였다. 퀄츠 튜브로 구성된 수평형 합성장치는 플라즈마 방전영역과 T-CVD 영역으로 구분되며, 방전되는 유도결합 플라즈마는 원료가스를 효율적으로 분해하는 역할을 한다. 합성을 위한 기판과 원료가스로는 각각 전자빔 증착법을 통하여 300nm 두께의 니켈 박막이 증착된 실리콘 웨이퍼와 메탄가스를 이용하였다. 저온합성공정의 변수로는 인가전력과 합성시간으로 설정하였으며, 공정변수의 영향을 확인함으로써 그래핀의 저온합성 메커니즘을 고찰하였다. 연구결과, 인가전력이 증가되고 합성시간이 길어짐에 따라 원료가스의 분해효율과 공급되는 탄소원자의 반응시간이 보장되어 그래핀의 합성온도가 저하가능함을 확인하였으며, $400^{\circ}C$에서 다층 그래핀이 합성됨을 확인하였다. 또한 플라즈마 변수의 보다 정밀한 제어를 통해 합성온도의 저온화와 그래핀의 결정성 향상이 가능할 것으로 예상된다.

• Journal of the Korean Ceramic Society
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• v.55 no.6
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• pp.570-575
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• 2018

Hydroxyapatites (HAps) were synthesized using the powdered waste of fishery products, i.e., fish scales and crab shells, as starting materials. HAp was synthesized by a wet-chemistry method followed by calcination at 600 and $800^{\circ}C$. Calcined crabshell powder revealed a single HAp phase and fine powder, while calcined fish-scale powder showed a ${\beta}-TCP$ secondary phase, even at the higher calcination temperature. Dense HAp pellets were obtained from the crab-shell powder by spark plasma sintering at $1000^{\circ}C$ for 10 min under applied pressures of 40 and 80 MPa in a vacuum state, giving sample densities of 2.93 and $3.06g/cm^3$, respectively. The estimated grain size of HAp was $448{\pm}96$ and $283{\pm}59nm$ for applied pressures of 40 and 80 MPa, respectively. In contrast, the HAp obtained using the pressureless sintering technique showed excessive grain growth without further densification.

• JSTS:Journal of Semiconductor Technology and Science
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• v.1 no.2
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• pp.95-102
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• 2001

Hafnium oxide thin films for gate dielectric were deposited at $300^{\circ}C$ on p-type Si (100) substrates by plasma enhanced chemical vapor deposition (PECVD) and annealed in $O_2$ and $N_2$ ambient at various temperatures. The effect of hydrogen treatment in 4% $H_2$ at $350^{\circ}C$ for 30 min on the electrical properties of $HfO_2$for gate dielectric was investigated. The flat-band voltage shifts of $HfO_2$capacitors annealed in $O_2$ambient are larger than those in $N_2$ambient because samples annealed in high oxygen partial pressure produces the effective negative charges in films. The oxygen loss in $HfO_2$films was expected in forming gas annealed samples and decreased the excessive oxygen contents in films as-deposited and annealed in $O_2$ or $N_2$ambient. The CET of films after hydrogen forming gas anneal almost did not vary compared with that before hydrogen gas anneal. Hysteresis of $HfO_2$films abruptly decreased by hydrogen forming gas anneal because hysteresis in C-V characteristics depends on the bulk effect rather than $HfO_2$/Si interface. The lower trap densities of films annealed in $O_2$ambient than those in $N_2$were due to the composition of interfacial layer becoming closer to $SiO_2$with increasing oxygen partial pressure. Hydrogen forming gas anneal at $350^{\circ}C$ for samples annealed at various temperatures in $O_2$and $N_2$ambient plays critical role in decreasing interface trap densities at the Si/$SiO_2$ interface. However, effect of forming gas anneal was almost disappeared for samples annealed at high temperature (about $800^{\circ}C$) in $O_2$ or $N_2$ambient.

• Journal of the Korean Ceramic Society
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• v.45 no.9
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• pp.549-555
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• 2008

The thermal barrier coating must withstand erosion when subjected to flowing gas and should also maintain good stability and mechanical properties while it must also protect the turbine component from high temperature, hot corrosion, creep, and oxidation during operation. In this study we investigated the influence of subsurface layer, $Al_2O_3$ or NiCrCoAIY bond coat layer, on the indentation damage behavior of YSZ thermal barrier coating layers deposited by electron beam physical vapor deposition (EB-PVD). The bond coat is deposited using different process such as air plasma spray (APS) or spray of high velocity oxygen fuel (HVOF) and the thickness is varied. Hertzian indentation technique is used to induce micro damages on the coated layer. The stress-strain behaviors are characterized by results of the indentation tests.

• Food Science of Animal Resources
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• v.34 no.1
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• pp.106-114
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• 2014

Folic acid, one of the B group of vitamins, is an essential substance for maintaining the functions of the nervous system, and is also known to decrease the level of homocysteine in plasma. Homocysteine influences the lowering of the cognitive function in humans, and especially in elderly people. In order to determine the strains with a strong capacity to produce folic acid, 190 bacteria were isolated from various kinds of jeotgal and chungkuk-jang. In our test experiment, JA71 was found to contain $9.03{\mu}g/mL$ of folic acid after 24 h of incubation in an MRS broth. This showed that JA71 has the highest folic acid production ability compared to the other lactic acid bacteria that were isolated. JA71 was identified as Lactobacillus plantarum by the result of API carbohydrate fermentation pattern and 16s rDNA sequence. JA71 was investigated for its physiological characteristics. The optimum growth temperature of JA71 was $37^{\circ}C$, and the cultures took 12 h to reach pH 4.4. JA71 proved more sensitive to bacitracin when compared with fifteen different antibiotics, and showed most resistance to neomycin and vancomycin. Moreover, it was comparatively tolerant of bile juice and acid, and displayed resistance to Escherichia coli, Salmonella Typhimurium, and Staphylococcus aureus with restraint rates of 60.4%, 96.7%, and 76.2%, respectively. These results demonstrate that JA71 could be an excellent strain for application to functional products.

• Journal of Animal Environmental Science
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• v.3 no.1
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• pp.1-12
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• 1997

This study was conducted to investigate the combined effects of VFA composition of rumen fluid and heat exposure (30${\pm}$2$^{\circ}C$) on the general clinical view and insulin secretory response to glucose in sheep. The total infusion of nutrients was examined in sheep via the technique of continuous alimentation. Four adult Suffolk sheep fitted with a permanent ruminal cannula and a simple T-shaped duodenal cannula were used. A peristaltic pump was used to infuse the solutions of volatile fatty acid triglycerides (VFA-TG) consisting of 70 triacetin : 20 tripropionin : 10 tributyrin (low propionin division: LP) and 50 triacetin : 40 tripropionin : 10 tributyrin (high propionin division: HP) on the basis of energy and minerals into the rumen, and casein solution into the duodenum. The effects of heat exposure and type of the levels of VFA-TG solutions on the insulin secretory response to glucose in sheep were investigated by using hyperglycemic clamp (HGC) technique. The results obtained are summarized as follows: 1. During the heat exposure (latter half of the infusion period), respiration rate, heart rate and rectal temperature increased (P＜0.01, P＜0.01, P＜0.05), but the levels of VFA-TG solutions (LP and HP division) did not affect the general clinical view except for the heart rate. 2. In the HGC technique, glucose infusion rate (GIR) and mean plasma insulin increments (MPII) tended to be ower in the heat exposure than in the thermoneutral environment, but no significant difference was found among the treatments. GIR and MPII remained unchanged between the levels of VFA-TG solutions. 3. In the HGC technique, ratio of MPII to GIR (MPII/GIR) which represents pancreatic ${\beta}$-cell response to glucose stimulation remained unchanged among the treatments.