• Proceedings of the Optical Society of Korea Conference
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• 1991.06a
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• pp.135-138
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• 1991

A planar type PIN photodiode has been fabricated and discussed. We used OMVPE systems to grow the structure of u-InP/u-InP/n-InP. P-n junction was formed by Zn-diffusion method at 50$0^{\circ}C$, for 5 minitues. The device characteristics at 5V were as follows: Dark currents were distributed around 1nA. Capacitance was 1.6pF and responsivity was above 0.85 mA/mW for 1.3${\mu}{\textrm}{m}$ wavelength. Measured cut-off frequency(-3dB) at -5V was 1.1㎓.

• Applied Science and Convergence Technology
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• v.24 no.6
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• pp.237-241
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• 2015

The reactor impedance is calculated for a planar-type cylindrical inductively coupled plasma source by expanding the electromagnetic fields into their Fourier-Bessel series forms including the three-dimensional shape of the antenna. The mode excitation method is utilized to determine the electromagnetic fields based on a Poynting theorem-like relationship. From the obtained electromagnetic fields, a tractable form of the reactor impedance is obtained as a function of various plasma and geometrical parameters and applied to carry out a parametric study.

• Proceedings of the KIEE Conference
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• 1997.07d
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• pp.1364-1366
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• 1997

Planar type magnetized inductively coupled plasma etcher has been built. The density and temperature of Ar plasma are measured as a function of rf power, external magnetic field, and pressure. The oxide etch rate and selectivity to polysilicon are measured as the above mentioned conditions and self-bias voltage.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.223-223
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• 2009

In this paper, designed and simulated Power Splitter (PS) integrated Mach-Zehnder interferometer (MZI) based planar type optical waveguide devices (which is called here a PS-MZI). The PS-MZI optical waveguide sensor was preceded by a Y-junction, which splits the input power between the sensor, and a reference branch, to minimize the effect of optical power variations. The PS-MZI optical waveguide sensor induced changing phases of the incident beam, which had fallen upon the waveguide through computer simulation, according to the small changes in the index of refraction, thus beam intensity was changed. The waveguide were optimized at a wavelength of 1550 nm and fabricated according to the design rule of 0.45 delta%, which is the difference of refractive index between the core and clad. The fabrication of PS-MZI optical waveguide sensor was performed by a conventional planar lightwave circuit (PLC) fabrication process. The PS-MZI optical waveguide that was fabricated to be applied as a biosensor revealed a low insertion loss and a low polarization-dependent loss. After having etched the over-clad at the sensor part in the MZI optical waveguide that was fabricated, Ti deposition was made on the adhesion layer, and then Au thin-film deposition was carried out thereon. In addition, its optical properties were measured by having changed the index of refraction oil at the sensing part of the MZI. To apply the planar type PS-MZI optical waveguide as a biosensor, a detection test for Staphylococcus aureus was conducted according to changes in concentration, having adopted Ti-alkoxide as ligand. The detection result of the S. aureus by the PS-MZI optical waveguide sensor was possible to the level of $10^1$ CFU/ml.

• Journal of Mechanical Science and Technology
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• v.17 no.4
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• pp.528-537
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• 2003

This paper proposes a 3-PPR planar parallel manipulator, which consists of three active prismatic Joints, three passive prismatic joints, and three passive rotational joints. The analysis of the kinematics and the optimal design of the manipulator are also discussed. The proposed manipulator has the advantages of the closed type of direct kinematics and a void-free workspace with a convex type of borderline. For the kinematic analysis of the proposed manipulator, the direct kinematics, the inverse kinematics, and the inverse Jacobian of the manipulator are derived. After the rotational limits and the workspaces of the manipulator are investigated, the workspace of the manipulator is simulated. In addition, for the optimal design of the manipulator, the performance indices of the manipulator are investigated, and then an optimal design procedure Is carried out using Min-Max theory. Finally. one example using the optimal design is presented.

• Journal of Institute of Control, Robotics and Systems
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• v.5 no.8
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• pp.914-922
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• 1999

A study on the improvement of tracking performance of a 3 DOF planar parallel manipulator is performed. A class of adaptive tracking control sheme is designed using self tuning adaptive fuzzy logic control theory. This control sheme is composed of three classical PD controller and a multi learning type self tuning adaptive fuzzy logic controller set. PD controller is tuned roughly by manual setting a priori and fuzzy logic controller is tuned precisely by the gradient descent method for a global solution during run-time, so the proposed control scheme is tuned more rapidly and precisely than the single learning type self tuning adaptive fuzzy logic control sheme for a local solution. The control performance of the proposed algorithm is verified through experiments.

• Bulletin of the Korean Chemical Society
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• v.2 no.3
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• pp.79-82
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• 1981

A calculation method of the dipole moments for square planar and tetrahedral complexes by the valence bond method has been developed and an example calculation was carried out choosing the square planar and tetrahedral $[M(Ⅱ)N_2Se_2]$ type complexes. The calculated values of the dipole moments by the valence bond method are higher than those of the approximate orbital method. We found that we may predict the geometric structure of the transition metal complexes comparing the calculated values of the dipole moments with the experimental values. A new method for definition of C' parameter has also developed on the basis of extended Huckel theory.

• Journal of Magnetics
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• v.6 no.2
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• pp.73-76
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• 2001

A double rectangular spiral type inductor has been fabricated by using FeTaN films. The inductor is composed of internal coils sandwiched by magnetic layers. Characteristics of inductor performance are investigated with an emphasis on planarization of magnetic films. In the absence of the planarization process, the grating topology of the upper magnetic films over the coil arrays degrades the soft magnetic properties and the inductor performance. It also induces a longitudinal magnetic anisotropy with the easy axis aligned to the magnetic flux direction. This alignment prevents the upper magnetic films from contributing to the total induction. Glass bonding is a viable method for achieving a completely planar inductor structure. The planar inductor with glass bonding shows excellent performance: inductance of 1.1 $\mu H$, Q factor of 7 (at 5 MHz), and the current capability up to 100 mA.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.29 no.4
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• pp.199-204
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• 2016

This paper was proposed floating island power MOSFET for lowering on state resistance and the proposed device was maintained 600 V breakdown voltage. The electrical field distribution of floating island power MOSFET was dispersed to floating island between P-base and N-drift. Therefore, we designed higher doping concentration of drift region than doping concentration of planar type power MOSFET. And so we obtain the lower on resistance than on resistance of planar type power MOSFET. We needed the higher doping concentration of floating island than doping concentration of drift region and needed width and depth of floating island for formation of floating island region. We obtained the optimal parameters. The depth of floating island was $32{\mu}m$. The doping concentration of floating island was $5{\times}1,012cm^2$. And the width of floating island was $3{\mu}m$. As a result of designing the floating island power MOSFET, we obtained 723 V breakdown voltage and $0.108{\Omega}cm^2$ on resistance. When we compared to planar power MOSFET, the on resistance was lowered 24.5% than its of planar power MOSFET. The proposed device will be used to electrical vehicle and renewable industry.

• Journal of the Korea Society of Computer and Information
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• v.27 no.1
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• pp.33-41
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• 2022

This paper describes a planar microstrip patch antenna designed on dielectric substrate. Two types of planar microstrip patch antennas are studied for the 5G wireless applications, one type is conventional microstrip structure, the other type is stacked microstrip structure fed by coaxial probe. Using electromagnetically coupling method, stacked microstrip patch antenna employing a multi-layer substrate structure was designed. The results indicate that the proposed stacked microstrip patch antenna performs well at 5G wireless service bandwith a broadband from 3.42GHz to 3.70GHz. The impedance bandwidth(VSWR≤2) is 360MHz(10.28%) from 3.42GHz to 3.78GHz. In this paper, through the designing of a stacked microstrip patch antenna, we have presented the availability for 5G wireless repeater system.