• 한국재료학회지
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• 제13권12호
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• pp.769-774
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• 2003

In this paper, we report on the DC characteristics of the AlGaN/GaN HFETs using physical models on piezoelectric and thermal effects. Employing the models was found to be essential for a realistic prediction of the DC current-voltage characteristics of the AlGaN/GaN HFETs. Though use of the implementation of the physical models, peak drain current, transconductance, pinch-off voltage, and most importantly, the negative slope in the current were accurately predicted. The importance of the heat sink effect was demonstrated by the comparison of the DC characteristics of AlGaN/GaN HFETs fabricated from different substrates including sapphire, Si and SiC. Highest peak current was achieved from the device with SiC by an effective suppression of heat sink effect.

• Applied Microscopy
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• 제28권1호
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• pp.83-90
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• 1998

본 연구에서는 박절편과 동결할단복제법을 이용하여 흰쥐 간세포에서 dehydrocholic acid가 수송되는 경로를 전자현미경적으로 조사하고자 하였다. 정상군이나 dehydrocholic acid 투여군에서 대부분의 Golgi 장치는 형성면을 담세관으로 향하고 있었다. Dehydrocholic acid 투여 20분 후에 세포질내세망과 Golgi 장치 및 소포 등이 담세관 주위에 증가되어 있었는데 특히 Golgi 장치 형성면에서는 소포가 될 것으로 추정되는 싹이 돌출되어 있었으며 소포들은 담세관에 융합된 것들도 관찰되었다. 이러한 소견으로 미루어 담즙산의 분비는 Golgi 장치 형성면의 쌀이 유리되어 형성된 소포가 담세관막에 융합되므로서 이루어질 것으로 추정된다.

• 한국전자파학회논문지
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• 제15권6호
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• pp.560-566
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• 2004

본 논문은 6 ㎓의 주파수를 2체배 하여 12 ㎓의 신호원을 얻는 광대역 능동 주파수 2체배기를 PHEMT를 사용하여 제작하였다. 설계된 주파수 체배기는 핀치오프 영역의 바이어스점을 가지며, 동작주파수 영역에서 무조건 안정인 특성을 갖도록 하기 위하여 입력매칭단과 바이어스 라인 사이에 직렬 RC회로를 제안하였다. 측정 결과0 ㏈m의 입력전력에 대하여 12 KHz 1,7 ㏈m의 2차 고조파 출력을 얻었고, 6 ㎓에서 -27.5 dBc의 기본주파수 억압과 -18 ㏈c의 3차 고조파 억압특성을 보였으며, 1.8 ㎓의 3 ㏈ 대역폭을 나타내었다.

• 대한전자공학회논문지SD
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• 제38권6호
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• pp.383-389
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• 2001

본 논문에서는 밀리미터파 대역에서 응용 가능한 AIGaAs/InGaAs PHEMT를 제작하고 특성을 분석하였다. 제작에 사용된 PHEMT 웨이퍼는 ATLAS 시뮬레이터를 이용하여 DC 및 RF 특성을 최적화 하였다. 게이트 길이가 0.35 ㎛이고 서로 다른 게이트 폭과 게이트 핑거 수를 갖는 PHEMT를 전자빔 노광장치를 이용하여 제작하였다. 제작된 소자의 게이트 길이와 핑거수에 따른 RF 특성변화를 측정 분석하였다. 게이트 핑거 수가 2개인 PHEMT의 DC 특성으로 1.2 V의 무릎 전압, -1.5 V의 핀치-오프 전압, 275 ㎃/㎜의 드레인 전류 밀도 및 260.17 ㎳/㎜의 최대 전달컨덕턴스를 얻었다. 또한 RF 특성으로 35 ㎓에서 3.6 ㏈의 S/sub 21/ 이득, 11.15 ㏈의 MAG와 약 45 ㎓의 전류 이득 차단 주파수 그리고 약 100 ㎓의 최대 공진주파수를 얻었다.

• Journal of Chest Surgery
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• 제40권10호
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• pp.691-695
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• 2007

배경: 중심정맥 도관은 1979년 처음 사용된 이래로 암환자의 치료에 있어 많은 편의를 제공하였다. 이에 본원 흉부외과에서는 완전 거치형 정맥도관의 임상 양상 및 사용에 따른 합병증 등을 분석하여 향후 치료에 도움이 되고자 본 연구를 하였다. 대상 및 방법: 2004년 11월부터 2006년 2월까지 완전 거치형 정맥도관 시술을 받은 100명의 환자를 대상으로 후향적 연구를 하여 다음과 같은 결과를 얻었다. 결과: 완전 거치형 정맥 도관 시술의 삽입정맥으로는 우측 쇄골하정맥 삽입이 74예(74%)였으며 좌측쇄골하 정맥(21예, 21%), 우측 경정맥(3예, 3%), 좌측 경정맥(1예, 1%)을 사용하였으며 1예에서는 우측 대퇴정맥을 사용하였다. 초기 합병증으로는 위치 이상이 5예(5%)와 동맥천자한 경우 5예 있었다. 만기 합병증으로는 쇄골하 정맥 혈전 형성이 한 예 있어 현재 항응고제 복용중이며 pinch off 증후군이 2예 있었다. 그 외의 초기 또는 만기 합병증은 없었다. 결론: 완전 거치형 도관의 사용은 합병증의 발생률은 낮고 비교적 안전한 방법이지만 감염, 혈전 형성, 도관의 절단 등은 장기간 사용시 나타날 수 있는 합병증으로 초기에 진단 및 치료가 된다면 더 큰 합병증을 예방할 수 있다.

• Journal of Chest Surgery
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• 제47권2호
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• pp.117-123
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• 2014

Background: Implanted venous access devices or permanent central venous access systems (PCVASs) are routinely used in oncologic patients. Complications can occur during the implantation or use of such devices. We describe such complications of the PCVAS and their management. Methods: Our retrospective study included 1,460 cases in which PCVAS was implanted in the 11 years between January 2002 and January 2013, including 810 women and 650 men with an average age of 45.2 years. We used polyurethane or silicone catheters. The site of insertion and the surgical or percutaneous procedure were selected on the basis of clinical data and disease information. The subclavian and cephalic veins were our most common sites of insertion. Results: About 1,100 cases (75%) underwent surgery by training surgeons and 360 patients by expert surgeons. Perioperative incidents occurred in 33% and 12% of these patients, respectively. Incidents (28%) included technical difficulties (n=64), a subcutaneous hematoma (n=37), pneumothoraces (n=15), and an intrapleural catheter (n=1). Complications in the short and medium term were present in 14.2% of the cases. Distortion and rupture of the catheter (n=5) were noted in the costoclavicular area (pinch-off syndrome). There were 5 cases of catheter migration into the jugular vein (n=1), superior vena cava (n=1), and heart cavities (n=3). No patient died of PCVAS insertion or complication. Conclusion: PCVAS complications should be diagnosed early and treated with probable removal of this material for preventing any life-threatening outcome associated with complicated PVCAS.

• JSTS:Journal of Semiconductor Technology and Science
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• 제10권3호
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• pp.213-224
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• 2010

An optically controlled silicon MESFET (OPFET) was fabricated by diffusion process to enhance the quantum efficiency, which is the most important optoelectronic device performance usually affected by ion implantation process due to large number of process induced defects. The desired impurity distribution profile and the junction depth were obtained solely with diffusion, and etching processes monitored by atomic force microscope, spreading resistance profiling and C-V measurements. With this approach fabrication induced defects are reduced, leading to significantly improved performance. The fabricated OPFET devices showed proper I-V characteristics with desired pinch-off voltage and threshold voltage for normally-on devices. The peak photoresponsivity was obtained at 620 nm wavelength and the extracted external quantum efficiency from the photoresponse plot was found to be approximately 87.9%. This result is evidence of enhancement of device quantum efficiency fabricated by the diffusion process. It also supports the fact that the diffusion process is an extremely suitable process for fabrication of high performance optoelectronic devices. The maximum gain of OPFET at optical modulated signal was obtained at the frequency of 1 MHz with rise time and fall time approximately of 480 nS. The extracted transconductance shows the possible potential of device speed performance improvements for shorter gate length. The results support the use of a diffusion process for fabrication of high performance optoelectronic devices.

• E2M - 전기 전자와 첨단 소재
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• 제8권1호
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• pp.56-63
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• 1995

MESFETs of the Ti/Au and Ti/Pd/Au gate were fabricated on n-type GaAs. Interdiffusion at Schottky interfaces, Schottky contact properties, and MESFET characteristics with heat treatment were investigated. Ti of Ti/Au contact and Pd of Ti/Pd/Au contact acted as a barrier metal against interdiffusion of Au at >$220^{\circ}C$. Pd of Ti/Pd/Au contact acted as a barrier metal even at >$360^{\circ}C$, however, Ti of Ti/Au contact promoted interdiffusion of Au instead of role of barrier metal. As the heat treatment temperature increases, in the case of both contact, saturated drain current and pinch off voltage decreased, open channel resistance increased, and degree of parameter variation in Ti/Au gate was higher than in Ti/Pd/Au gate at >$360^{\circ}C$ Schottky barrier height of Ti/Au and Ti/Pd/Au contacts was 0.69eV and 0.68eV in the as-deposited state, respectively, and Fermi level was pinned in the vicinity of 1/2Eg. As the heat treatment temperature increases, barrier height of Ti/Pd/Au contact increased, however, decreased at >$360^{\circ}C$ in the case of Ti/Au contact. Ideality factor of Ti/Au contact was nearly constant regardless of heat treatment, however, increased at >$360^{\circ}C$ in the case of Ti/Au contact. From the results above, Ti/Pd/Au was stable gate metal than Ti/Au.

• 센서학회지
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• 제18권2호
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• pp.110-115
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• 2009

Polystyrene (PS) microspheres were used to good advantage as a template material to prepare macroporous $TiO_2$ thin films. This is enabled to run the thermal decomposition of the PS without the collapsing of the 3-D macroporous framework during the calcination step. $TiO_2$ thin films were deposited onto the colloidal templated substrates at room temperature by RF sputtering, and then samples were thermally treated at $450^{\circ}C$ for 40.min in air to remove the organic colloidal template and induce crystallization of the $TiO_2$ film. The macroporous $TiO_2$ thin film exhibited a quasi-ordered partially hexagonal close-packed structure. Burst holes, estimated to be formed during PS thermal decomposition, are seen as the hemisphere walls. the inner as well as the outer surfaces of the hollow hemispheres formed by the method of thermal decomposition can be easily accessed by the diffusing gas species. As a consequence, the active surface area interacting with the gas species is expected to be enlarged about by a factor of fourth as large as compared to that of a planar films. Also the thickness at neighboring hemisphere could be controlled a few nm thickness. If the acceptor density becomes as large that depletion width reaches those thickness, the device is in the pinch off-situation and a strong resistance change should be observed.

• 한국전기전자재료학회논문지
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• 제33권4호
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• pp.281-285
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• 2020

Oxide semiconductor devices have become increasingly important because of their high mobility and good uniformity. The channel length of oxide semiconductor thin film transistors (TFTs) also shrinks as the display resolution increases. It is well known that reducing the channel length of a TFT is detrimental to the current saturation because of drain-induced barrier lowering, as well as the movement of the pinch-off point. In an organic light-emitting diode (OLED), the lack of current saturation in the driving TFT creates a major problem in the control of OLED current. To obtain improved current saturation in short channels, we fabricated indium gallium zinc oxide (IGZO) TFTs with single gate and double gate structures, and evaluated the electrical characteristics of both devices. For the double gate structure, we connected the bottom gate electrode to the source electrode, so that the electric potential of the bottom gate was fixed to that of the source. We denote the double gate structure with the bottom gate fixed at the source potential as the BGFP (bottom gate with fixed potential) structure. For the BGFP TFT, the current saturation, as determined by the output characteristics, is better than that of the conventional single gate TFT. This is because the change in the source side potential barrier by the drain field has been suppressed.