• Journal of the Korean Institute of Telematics and Electronics
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• v.27 no.4
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• pp.547-554
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• 1990

Considering channel length modulation, we proposed a GaAs MESFET model for circuit simulator. In existing M.S. Shur's model, two different models are used according to pinch-off voltage of devices. One model for both type of devices was proposed. In this model we introduced weighted switching function(WSF) based on channel length modulation. This proposed model showed better accuracy comparing with existing single law model and complete velocity saturation model.

• 제어로봇시스템학회:학술대회논문집
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• 1990.10b
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• pp.1259-1264
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• 1990

During the past two decades, a lot of researches have been done on the synthesis of grassroot heat exchanger networks(HEN). However, few have been dedicated to retrofit of existing heat exchanger networks, which usually use more amount of utilities (i.e. steam and/or cooling water) than the minimum requirements. This excess gives motivation of trades-off between energy saving and rearranging investment. In this paper, an algorithmic-evolutionary synthesis procedure for retrofitting heat exchanger networks is proposed. It consists of two stages. First, after the amount of maximum energy recovery(MER) is computed, a grass-root network featuring minimum number of units(MNU) is synthesized. In this stage, a systematic procedure of synthesizing MNU networks is presented. It is based upon the concept of pinch, from which networks are synthesized in a logical way by the heuristics verified by the pinch technology. In the second stage, since an initial feasible network is synthesized based on the pre-analysis result of MER and must-matches, an assignment problem between new and existing units is solved to minimize total required additional areas. After the existing units are assigned, the network can be improved by switching some units. For this purpose, an improvement problem is formulated and solved to utilize the areas of existing units as much as possible. An example is used to demonstrate the effectiveness of the proposed method.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.12 no.6
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• pp.890-898
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• 2001

4H-SiC(silicon carbide) MESFET large signal model was studied using modified Materka-Kacprzak large signal MESFET model. 4H-SiC MESFET device simulation have been conducted by Silvaco\`s 2D device simulator, ATLAS. The result is modeled using modified Materka large signal model. simulation and modeling results are -8 V pinch off voltage, under V$\_$GS/=0 V, V$\_$DS/=25 V conditions, I$\_$DSS/=270 mA/mm, G$\_$m/=52.8 ms/mm were obtained. Through the power simulation 2 GHz, at the bias of V$\_$GS/-4 V md V$\_$DS/=25 V, 10 dB Gain, 34 dBm (1dB compression point)output porter, 7.6 W/mm power density, 37% PAE(power added efficiency) were obtained.7.6 W/mm power density, 37% PAE(power added efficiency) were obtained.d.

• Proceedings of the IEEK Conference
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• 2001.06b
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• pp.229-232
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• 2001

4H-SIC(silicon carbide) MESFET large signal model was studied using modified Materka-Kacprzak large signal MESFET model. 4H-SiC MESFET device simulation have been conducted by Silvaco's 2D device simulator, ATLAS. The result is modeled using modified Materka large signal model. simulation and modeling results are -8V pinch off voltage, under $V_{GS=0V}$, $V_{DS=25V}$ conditions, $I_{DSS=270㎃}$mm, $G_{m=45㎳}$mm were obtained. Through the power simulation 2GHz, at the bias of $V_{GS=-4V}$ and $V_{DS=25V}$, 10dB Gain, 34dBm(1dB compression point)output power, 7.6W/mm power density, 37% PAE(power added efficiency) were obtained.d.d.d.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.7 no.4
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• pp.743-749
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• 2003

By biasing the gate of cold-HEMT with a voltage slightly lower than the pinch-off point, a new small-signal modeling method that is free from gate degradation problem and requires no additional DC measurement is proposed in this paper. The method has shown excellent agreement between modeled and measured S-parameters up to 62 GHz at 49 different normal operating bias points.

• Proceedings of the IEEK Conference
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• 2001.06b
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• pp.189-192
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• 2001

We have studied fabrication processes that form asymmetric $\Gamma$-gate with a 0.1${\mu}{\textrm}{m}$ gate length in MMIC's(Monolithic Microwave Integrated Circuits). Asymmetric $\Gamma$-gate was fabricated using mixture of PMMA and MCB. Thus pseudomorphic high electron mobility transistor (PHEMT's) with 0.1${\mu}{\textrm}{m}$ gate length was fabricated via several steps such as mesa isolation, metalization, recess, passivation. PHEMT's has the -1.75 V of pinch-off voltage (Vp), 63 mA of drain saturation current(Idss and 363.6 mS/mm of maximum transconductance (Gm) in DC characteristics and current gain cut-off frequency of 106 GHz and maximum frequency of oscillation of 160 GHz in RF characteristics.

• Computational Structural Engineering
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• v.3 no.1
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• pp.59-70
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• 1990

The p-version of the finite element method is a new approach to finite element analysis in which the partition of the domain is held fixed while the degree p of approximating piecewise polynomials is increased. In this paper, the focus is on computer implementation of a new hierarchic p-convergence shell model based on blend mapping functions. Its rigid-body modes, round-off error, and convergence characteristics are investigated.

• Progress in Superconductivity and Cryogenics
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• v.8 no.4
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• pp.34-38
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• 2006

Cycle analysis was performed in order to find the optimum design point of the LNG Boil-off gas re-liquefaction system. Thermodynamic analysis revealed the system could be defined by three state variables. Thus the system performance could be described by the three cold endpoint temperatures of the three-pass heat exchanger. This enabled us to investigate the cycle performance in terms of the heat exchanger parameters. To get access to the cycle states of higher system performances, larger heat exchangers were found necessary. Also the thermal pinch in cryogenic heat exchangers was found to act as a limiting factor to the system performance.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.33 no.1
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• pp.78-82
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• 2020

In this study, MOSFETs fabricated on Si-doped, MBE-grown β-Ga₂O₃ are demonstrated. A Si-doped Ga₂O₃ epitaxial layer was grown on a Fe-doped, semi-insulating 1.5 cm × 1 cm Ga₂O₃ substrate using molecular beam epitaxy (MBE). The fabricated devices are circular type MOSFETs with a gate length of 3 ㎛, a source-drain spacing of 20 ㎛, and a gate width of 523 ㎛. The device exhibited a good pinch-off characteristic, a high on-off drain current ratio of approximately 2.7×10⁹, and a high breakdown voltage of 1,080 V, which demonstrates the potential of Ga₂O₃ for power device applications including electric vehicles, railways, and renewable energy.

• Proceedings of the KIEE Conference
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• 2002.07c
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• pp.1823-1826
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• 2002

The purpose of this experiment was to develope Triggered Vacuum Switch (TVS) for the high voltage and high current. The TVS has an array of rods of alternate polarity in which a fixed gap spacing is maintained between the rods. The cross section of each rod has trapezoidal shape. It consists of electrode, ceramic chamber, getter and trigger. Currently, triggered vacuum switch (TVS) with seal-off has been designed and fabricated at PAL. An experimentation and trigger devices for TVS were designed for testing characteristics of electricity. For making the prototype of TVS, it is developed of fabrication process and fined of electrode material. The fabrication of the TVS is a lot of process which have manufacturing of part, chemical clean, ceramic brazing and metal welding. The fabricated TVS is tested of leak for vacuum, hold-off voltage and conditioning of trigger system. The TVS has pinch-off after it is removed of gas in the TVS and activated of getter in degassing furnace. The prototype TVS tested about 20 kV, 75 kA, 83 ${\mu}s$ with 100 kJ capacitor bank and inductance 5 ${\mu}H$. This paper describes the results of tests and the characteristics of the switch.