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A New Small-Signal Modeling Method of HEMT Using Weakly Pinched-Off Cold-HEMT  

전만영 (동양대학교 정보통신공학부)
Publication Information
Journal of the Korea Institute of Information and Communication Engineering / v.7, no.4, 2003 , pp. 743-749 More about this Journal
Abstract
By biasing the gate of cold-HEMT with a voltage slightly lower than the pinch-off point, a new small-signal modeling method that is free from gate degradation problem and requires no additional DC measurement is proposed in this paper. The method has shown excellent agreement between modeled and measured S-parameters up to 62 GHz at 49 different normal operating bias points.
Keywords
parameter extraction; HEMT characterization; equivalent-circuit; cold-HEMT modeling of HEMT; modeling of MESFET; extraction of small-signal equivalent-circuit;
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