• The Transactions of the Korean Institute of Electrical Engineers C
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• v.52 no.12
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• pp.545-552
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• 2003

When a Si PIN diode is exposed to fast neutrons, it results in displacement damage to the Si lattice structure of the diode. Defects induced from structural dislocation become effective recombination centers for carriers which pass through the base of a PIN diode. Hence, increasing the resistivity of the diode decreases the current for the applied forward voltage. This paper involves the development of a neutron sensor based on the phenomena of the displacement effect damaged by neutron exposure. The neutron effect on the semiconductor was analyzed. Several PIN diode arrays with various thickness and cross-section area of the intrinsic layer(I layer) were fabricated. Under irradiation tests with a neutron beam, the manufactured diodes have a good linearity to neutron dose and show that the increase of thickness of I layer and the decrease of cross-section of PIN diodes improve the sensitivity. Newly developed PIN diodes with thicker I layer and various cross section, were retested and then showed the best neutron sensitivity at the condition that the I layer thickness was similar to a side length. On the basis of two test results, final discrete PIN diodes with a rectangular shape were manufactured and the characteristics as neutron detectors were analyzed through the neutron beam test using on-line electronic dosimetry system. Developed PIN diode shows a good linearity as dosimetry in the range of 0 to 1,000cGy(Tissue) and its neutron sensitivity is 13mV/cGy at constant current of 5mA, that is three times higher than that of commercially available neutron detectors. And the device shows little dependency on the orientation of the neutron beam and a considerable stability in annealing test for a long period.

• Tunnel and Underground Space
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• v.30 no.4
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• pp.394-403
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• 2020

This technical note describes the calculation method of continuous constant linear velocity Archimedean spiral paths which are applied to the pin-on-disk abrasion test. Approximate constant linear velocity Archimedean spirals have unstable velocities in the very near region of the rotational origin. Thus, in this technical note, the offset distance from the rotational origin was given by using a hollow type rock sample to maintain the constant velocity during the test. Also, to connect the inward and outward spirals continuously, the information of start and end points were input on the next spiral path consecutively. Furthermore, the calculation program was developed to provide convenience for calculating constant linear velocity spirals according to the specimen dimension and abrasion test conditions.

• Journal of the Korean Society for Heat Treatment
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• v.21 no.2
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• pp.111-115
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• 2008

• Proceedings of the KSME Conference
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• 2008.11a
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• pp.1289-1294
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• 2008

Electrostatic discharge(ESD) phenomenon is a serious reliability concern. It causes approximately most of all field failures of IC. To quality the ESD immunity of IC product, there are some test methods and standards developed. ESD events have been classified into 3 models, which are HBM, MM and CDM. All the test methods are designed to evaluate the ESD immunity of IC products. This study provides an overview among ESD test methods on ICs and an efficient ESD stress method. We have estimated on all pin combination about the positive and negative ESD stress. We make out the weakest stress mode. This mode called a worst-case mode. We proposed that positive supply voltage pin and I/O pin combination is efficient because it is a worst-case mode.

• ETRI Journal
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• v.36 no.2
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• pp.293-300
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• 2014

As the system-on-chip (SoC) design becomes more complex, the test costs are increasing. One of the main obstacles of a test cost reduction is the limited number of test channels of the ATE while the number of pins in the design increases. To overcome this problem, a new test architecture using a channel sharing compliant with IEEE Standard 1149.1 and 1500 is proposed. It can significantly reduce the pin count for testing a SoC design. The test input data is transmitted using a test access mechanism composed of only input pins. A single test data output pin is used to measure the sink values. The experimental results show that the proposed architecture not only increases the number of sites to be tested simultaneously, but also reduces the test time. In addition, the yield loss owing to the proven contact problems can be reduced. Using the new architecture, it is possible to achieve a large test time and cost reduction for complex SoC designs with negligible design and test overheads.

• Journal of Welding and Joining
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• v.27 no.4
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• pp.73-78
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• 2009

Characterization of the microweld CCFL electrode for the TFT-LCD backlight unit was carried out in terms of the glass beading heat treatment conditions. We evaluate the weld zone and parent metal of the microweld CCFL electrodes that were exposed to simulated glass beading heat treatment. The CCFL electrode was composed of the cup made with pure Ni, the pin made with pure Mo and the lead wire made with Ni-Mn alloy. Each part of the electrode was assembled together by micro spot welding process and then the assembled electrodes were exposed to simulated glass beading temperatures of $700^{\circ}C,\;750^{\circ}C$ and $800^{\circ}C$. The microstructures of the microweld CCFL electrode were observed by using optical microscope, scanning electron microscope and EDS. Micro-tensile and microhardness test were also carried out. The results indicated that the grain coarsening in the HAZs(heat affected zones) for both the cup-pin weld and pin-lead wire were exhibited and the grain coarsening of the HAZ for the cup and the lead wire was more obvious than the HAZ of the pin. The micro-tensile test revealed that the fracture occurred at the cup-pin weld zone for all test conditions. The fracture surface could be classified into two parts such as pin portion and cup portion including weld nugget. The failure was seemed to be initiated from the boundary between nugget and pin through the weld joint. The result of the microhardness measurement exhibited that the relatively low hardness value, about 105HV was recorded at the HAZ of the cup. This value was about 50% less than that of the original value of the cup. The reduction of the microhardness was considered as the cause of the grain coarsening due to welding process. It was also appeared that there was no change in electric resistance for the standard electrodes and heat treated electrodes.

• Journal of Korea Foresty Energy
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• v.18 no.2
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• pp.84-91
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• 1999

The objective of this study was to present creep and the effects of mechano-sorptive deflection of drift pin moment resisting joint between LVL members under changing relative humidity (RH) conditions. The LVL members with steel gusset were jointed by a square pattern of eight injected drift pin. Three diameter drift pins were used to test specimens (6mm, 10mm, and 16mm). The creep test was conducted under two constant loading conditions : one at 30 kgf(840 kgf-cm) and the other at 60 kgf(1680 kgf-cm). The experiment was conducted in an open shed outside. (1)The total rotation creep model of moment resisting joing can be expressed as the sum of the creep of controlled environment (3-parameter model), dimensional change and mechano-sorptive deflection resulting from the variable environment. (2)Mechanosorptive rotation creep is recoverable as moisture content increases during adsorption. Least squares method for linear regression analysis was performed using mechano-sorptive rotation creep as the dependent variable and moisture content as the independent variable. The slope of low moment specimens are compared with those of high moment. This means that low moment condition is more easily affected by changes in humidity than high moment conditions. (3)Although creep deflection is higher for small diameter drift pin than for large diameter drift pin, the shape of creep deflection curves for all specimens is similar.

• Proceedings of the KIEE Conference
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• 2001.07d
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• pp.2522-2525
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• 2001

Si PIN diodes are subject to be damaged from the exposure of fast neutron by displacement of Si lattice structure. The defects are effective recombination centers for carriers which migrate through the base region of the PIN diode when forward voltage is applied. It causes an increase in current and a decrease in resistivity of the diode. This paper presents the development of a neutron sensor based on displacement damage effect. PIN diodes having various structures were made bymicro-fabrication process, and neutron beam test was performed to identify neutron damage effect to the diode. From a result of the test, it was shown that the forward voltage drop of the diode, at a constant current, has good linearity for neutron dosage. Also it was found that the newton dosage can be measured by the pin diode neutron dosimeter with constant current power.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2013.05a
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• pp.1259-1260
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• 2013

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.05c
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• pp.140-142
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• 2001

In this study mechanical for stress according to Pin type of high voltage suspension type insulator. R-shaped metal pin. and a tapered metal pin having a tensile pin having a tensile strength of more than the breaking strength of insulating body are provided in porcelain insulating bodies, and a suspension insulator according to the present invention, a test for determining the tensile strength of the insulating body was made and the results. These insulators are designed and produced by using the computer analysis of mechanical and electrical stresses together with the technical know-how accumulated from long year of study into every respect of insulators.