• 한국정밀공학회지
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• 제23권3호
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• pp.163-170
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• 2006

Thin films play an important role in many technological applications including microelectronic devices, magnetic storage media, MEMS and surface coatings. It is well known that a thin film's material properties can be very different front the corresponding bulk properties and thus there has been a strong need for the development of a miniature tester to measure the mechanical properties of a thin film. Two testers are designed and set up in small size of 62 mm width, 20 mm depth and 90-120 mm height to fit in a chamber of scanning electron microscope (SEM). One tester has a homemade 0.2 N load cell and a low-priced electromagnetic actuator. The other has a commercial 5 N load cell, a $52{\mu}m$ piezoelectric actuator and some novel grips. Two types of 3.5 microns thick polysilicon specimen are tested to prove the testers' applicability. The strain is measured by the two ways. Firstly, it is measured by an ISDG system in the atmosphere far the reference. Secondly, the same test is repeated in a SEM chamber to monitor the strain as an in-situ experiment. The strain is evaluated by observing the gap change between two markers.

• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 2006년도 춘계학술대회 논문집
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• pp.469-470
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• 2006

Piezoelectric transformers based on lead zirconate titanate(PZT) have been received considerable interest because of their wide potential applications in transformer, oscillator, resonance sensor, actuator, acoustic transducer, as well as active slider for hard disk drives. However, for the applications which need a small power supply such as thin and flat displays, micro-robot, micro-system, it is especially necessary to integrate the passive components because they typically need more than 2/3 of the space of the conventional circuit. So, we have fabricated the piezoelectric micro-transformer to supply energy for micro-systems using PZT thin films and MEMS technologies.

• 한국전기전자재료학회논문지
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• 제21권6호
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• pp.556-561
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• 2008

This paper reports the characteristics of piezoelectric microspeakers that are audible in open air with high quality piezoelectric AlN thin film according to the materials properties. When we use a tensile-stressed silicon nitride diaphragm as a supporting layer, the Sound Pressure Level (SPL) is relatively small and constant at low frequency region and shows about 70 dB at 10 kHz. However, in case of a compressively stressed composite diaphragm, the SPL of the fabricated microspeakers shows higher output pressure than those of a tensile-stressed diaphragm. It produces more than 66 dB from 100 Hz to 15 kHz and the highest SPL is about 100 dB at 9.3 kHz with $20V_{peak-to-peak}$, sinusoidal input biases and at 10 mm distances from the fabricated microspeakers to the reference microphone. From the experimental results, it is superior to have a compressively composite diaphragm in order to produce a high SPL in piezoelectric microspeaker.

• E2M - 전기 전자와 첨단 소재
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• 제10권2호
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• pp.126-133
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• 1997

In order to apply for the gas sensing layer and the piezoelectric thin film devices, we studied the effects of magnetron sputtering conditions and annealing temperature on the electrical and structual characteristics of the ZnO thin film. The optimal deposition conditions, in order to obtain a c axis of the ZnO (002) phase thin film which is perpendicular to SiO$_{2}$/Si substrate, were like these ; substrate temperature 150.deg. C, chamber pressure 2 mtorr, R.F. power 300 watts, gas flow ratio 0.4[O$_{2}$(Ar + $O_{2}$)]. When the ZnO thin film was annealed in 600.deg. C, $O_{2}$ gas ambient for 1 hr, the resistivity was 2.6 x 10$^{2}$.ohm.cm and the grain size of ZnO thin film was less than 1 .mu.m. So the ZnO thin film acquired from above conditions can apply for the gas sensing layer which require a c axis perpendicular to the substrate surface.

• 한국전기전자재료학회논문지
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• 제17권4호
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• pp.422-425
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• 2004

In this study, the AZO thin films were prepared as a function of oxygen gas flow ratio at room temperature by FTS(Facing Targets Sputtering) apparatus using Zn:Al(metal)-Zn:Al(metal) or Zn(metal)-ZnO:Al(ceramic). The film thickness, crystalline and electric properties of AZO thin film was evaluated by $\alpha$-step, XRD and 4-point probe. In the results, the resistivity of AZO thin film was shown the lowest value about 8${\times}$10$^{-2}$ $\Omega$-cm(Zn:Al-Zn:Al), 3${\times}$10$^{-1}$ $\Omega$-cm(Zn-ZnO:Al) at the oxygen gas flow ratio 0.3. And the AZO thin film has good crystalline at oxygen gas flow ration 0.4, using Zn:Al-Zn:Al targets.

• 한국세라믹학회지
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• 제40권3호
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• pp.225-228
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• 2003

A Bender typed Multilayer Actuator(BMA) for decreasing the depolarization effect was designed and fabricated. Unlike bimorph and multimorph actuators in which depolarization occurred, the BMA did not generate depolarization because the polarization and the electric field directions are the same. The simulated results indicate that higher displacement of the BMA can be achieved by increasing input voltage. Compared with the multimorph actuator, the proposed actuator is expected to extend a life time as well as acceptable voltage range.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 하계학술대회 논문집
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• pp.237-237
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• 2009

Zinc oxide (ZnO) thin film was deposited on Si substrates using polycrystalline (poly) 3C-SiC buffer layer, in which the ZnO film was grown by sol-gel method. Physical characteristics of the grown ZnO film was investigated experimentally by means of SEM, XRD, FT-IR (Furier Transform-Infrared spectrum), and AFM. XRD pattern was proved that the grown ZnO film on 3C-SiC layers had highly (002) orientation with low FWHM (Full width of half maxium). These results showed that ZnO thin film grown on 3C-SiC buffer layers can be used for various piezoelectric fields and M/NEMS applications.

• 한국항공우주학회지
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• 제31권2호
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• pp.51-56
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• 2003

압전필름센서는 우수한 동적 감지 특성을 갖고 있어 복합재 구조의 저속충격을 모니터링하는데 유용하게 사용될 수 있다. 복합재 샌드위치 보에 대한 충격응답함수를 유도하였으며, 이를 충격시험와 비교하였따. 충격시험은 손상이 발생하지 않는 저에너지 조건에서 계측장치가 부착된 낙하식 충격시험기를 이용하여 수행하였다. 충격하중에 으한 샌드위치보의 거동을 예측하는 정방향 문제와 압전필름센서 신호로부터 충격력을 복원하는 역방향 문제에서 시험과 해석의 결과는 잘 일치하였다. 본 연구를 통하여 압전필름센서를 이용한 복합재 샌드위치 구조의 저속충격 모니터링 가능성을 확인하였다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 추계학술대회 논문집 Vol.15
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• pp.140-143
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• 2002

In this study, we prepared ZnO/glass and $ZnO/SiO_{2}/Si$ thin film by Facing Targets Sputtering (FTS) system for Film Bulk Acoustic Resonator (FBAR). When the ZnO thin film applied to piezoelectric thin film, it requires good c-axis preferred orientation. And c-axis orientation has a remarkable difference with preparation conditions. Therefore, c-axis orientation must be significantly evaluated according to changing deposition conditions. Moreover, in order to prepare ZnO thin film with good crystallographic properties and progressive of efficiency of product process, the ZnO thin film should have to prepared as low temperature as possible. In this work, we prepared ZnO thin films on slide glass and $SiO_{2}/Si$ substrate. And the crystallographic characteristics of ZnO thin films on sputtering conditions were investigated by alpha-step and X-ray diffraction.

• 한국전기전자재료학회논문지
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• 제16권8호
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• pp.711-715
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• 2003

In this study, we prepared ZnO/glass and ZnO/SiO$_2$/Si thin film by Facing Targets Sputtering (FTS) system for Film Bulk Acoustic Resonator (FBAR). When the ZnO thin film applied to piezoelectric thin film, it requires good c-axis preferred orientation. And c-axis orientation has a remarkable difference with preparation conditions. Therefore, c-axis orientation must be significantly evaluated as a function of deposition conditions. Moreover, in order to prepare ZnO thin film with good crystallographic properties and progressive of efficiency of product process, the ZnO thin film should be prepared as low temperature as possible. In this work, we prepared ZnO thin films on slide glass and SiO$_2$/Si substrate. And the crystallographic characteristics of ZnO thin films on sputtering conditions were investigated by alpha-step and X-ray diffraction.