• 한국전기전자재료학회논문지
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• 제15권12호
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• pp.1060-1064
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• 2002

We have studied the effect of crystallization temperature, composition and film thickness, which are the fundamental processing parameters of lead zirconate titanate(PZT) thin film fabrication, in the respect of the piezoelectric properties by our pneumatic loading method(PLM). A great deal of research has been done in the field of characterization for piezoelectric thin films after the first report on the measurement for the piezoelectric coefficient of thin films in 1990. Even though the piezoelectric properties of thin films are very critical factors in the micro-electro mechanical system(MEMS) and thin film sensor devices, a few reports for the piezoelectric characterization are provided for the last decade unlikely the bulk piezoelectric devices. We have found that the piezoelectric properties of thin films are improved as the increase of crystallization temperature up to 750$\^{C}$ and this behavior can be also explained by the analysis of dielectric polarization hysteresis loop, X-ray diffraction and scanning electron microscopy. The effect of Zr/Ti composition has been also studied. This gives us the fact that the maximum piezoelectricity is found near Morphotropic Phase Boundary(MPB) as bulk PZT system does.

• 한국재료학회지
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• 제17권2호
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• pp.121-123
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• 2007

Energy harvesting from the vibration through the piezoelectric effect has been studied for powering the wireless sensor node. As piezoelectric unimorph cantilever structure can transfer low vibration to large displacement, this structure was commonly deployed to harvest electric energy from vibrations. Piezoelectric unimorph structure was composed of small stiff piezoelectric ceramic on the large flexible substrate. As there is the large Young's modulus difference between the flexible substrate and stiff piezoelectric ceramic, flexible substrate could not homogeneously transfer the vibration to stiff piezoelectric ceramic. As a result, most piezoelectric ceramics had been broken at the certain point. We measured and analyzed the stress distribution on the piezoelectric ceramic on the cantilever.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 추계학술대회 논문집
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• pp.111-111
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• 2009

In this work, we discuss simulation of surface acoustic wave device using Comsol Multiphysics. The structure SAW device based on piezoelectric thin film aluminum-nitride (AlN) on silicon was simulated. Some parameters of SAW device such as surface velocity, displacement of piezoelectric thin film were evaluated by software. Many modes and shapes of wave are also discussed in this paper. For evaluation physical parameters of AlN piezoelectric layer, the SAW resonator was modeled and simulation results were also compared with experiment results. we simulated arid evaluated the surface Rayleigh wave of AlN thin film on silicon substrate. Results simulation and experiment showed the surface velocity of AlN thin film was about 5200 m/s and shape of surface wave was also displayed. This paper has also proposed as method to study SAW characteristic of piezoelectric thin film and found out measurement values accurately of film such as stiffness matrix, piezoelectric matrix. These values are very important in calculation and design SAW device or MEMS device based on AlN piezoelectric layer.

• 한국전기전자재료학회논문지
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• 제19권6호
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• pp.531-537
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• 2006

A micromachined piezoelectric microspeaker was fabricated with a highly c-axis oriented ZnO thin film on a silicon-nitride film having compressive residual stress. When it was measured 3 mm away from the microspeaker in open field, the largest sound pressure level produced by the fabricated microspeaker was about 91 dB at around 2.9 kHz for the applied voltage of $6\;V_{peak-to-peak}$. The key technologies to these successful results were as follows: (1) the usage of a wrinkled diaphragm caused by the high compressive residual stress of silicon-nitride thin film, (2) the usage of the highly c-axis oriented ZnO thin film.

• 한국세라믹학회지
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• 제40권11호
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• pp.1062-1066
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• 2003

Design of a piezoelectric actuator for the ultrasonic motor must ensure that contact point has elliptic trajectory of movement. The new idea of an elliptic trajectory formation of the piezoelectric actuator is investigated in the paper. Shaking beam for the piezoelectric linear ultrasonic motor was introduced to realize this new idea. The principle is based on the excitation of longitudinal and flexural vibrations of the actuator by using two sources of longitudinal mechanical vibrations shifted by $\pi$/2. Mode-frequency and harmonic response analyses of the actuator based on FEM have been carried out. The moving trajectory of the contact point has been defined. Finally, The experimental research of shaking beam has been confirmed an opportunity of the elliptic trajectory reception with the help of one stable mode of the vibrations.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 추계학술대회 논문집
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• pp.299-299
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• 2007

This paper presents an omni-directional piezoelectric actuator which utilizes only one actuator. The actuator has a simple structure of cone type consists of two piezoelectric ceramics of ring type and electrodes divided four segments and a stainless steel body. To find the optimal operating condition of the actuator, the frequency characteristics of the actuator are analyzed by ATILA, FEM and measured by Impedance Analyzer. We have also developed a stage using the omni-directional actuator and an actuator driver circuit to create four sinusoidal waves with a variable frequency and phase difference.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2009년도 제40회 하계학술대회
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• pp.1240_1241
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• 2009

In this paper, sol-gel-spin coated $Pb(ZrTi)O_3$ thin film with $ZrO_2$ buffer-layer and $PbTiO_3$ seed-layer was investigated for vibration MEMS energy harvester to scavenge power from ambient vibration via d33 piezoelectric mode. Piezoelectric thin film deposition techniques on insulating layer is the important key for $d_{33}$ mode of piezoelectric vibration energy harvester. $ZrO_2$ buff-layer was utilized as an insulating layer. $PbTIO_3$ seed-layer was applied as an inter-layer between PZT and $ZrO_2$ layer to improve the crystalline of PZT thin film. The fabricated PZT thin film had a remanent polarization of 5.3uC/$cm^2$ and the coercive field of 60kV/cm. The fabricated energy harvester using PZT thin film with PTO seed-layer generated 1.1uW of electrical power to $2.2M{\Omega}$ of load with $4.4V_{pvp}$ from vibration of 0.39g at 528Hz.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 하계학술대회 논문집
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• pp.224-225
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• 2009

Aluminium nitride thin film was deposited on Au electrode and Si substrate by radio frequency sputtering system. X-ray diffraction (XRD) was utilized to identify the AlN phase, and Atomic Force Microscope (AFM) was used to obtain the images of surface morphology and roughness value of AlN thin film. The result of XRD and AFM measurement showed that the AlN thin film has strong c-axs orientation and smooth surface. In order to investigate piezoelectric response and polarization properties along to the direction of electric field, PFM (Piezoresponse Force Microscope) system was used, and the images of piezoelectric response due to switching of polarization was observed by PFM.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 하계학술대회 논문집 Vol.4 No.2
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• pp.776-778
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• 2003

In the paper, the novel linear ultrasonic motor for precision position control was designed and fabricated. It was composed of two piezoelectric actuators with longitudinal ultrasonic fluctuations and shaking beam. When two AC electric fields ($Usin{\omega}t$, $Ucos{\omega}t$) were applied in two piezoelectric actuators respectively, the middle part of shaking beam had an elliptical trajectory. According to experimental results, good symmetrical characteristic of two piezoelectric actuators were obtained.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 하계학술대회 논문집 Vol.3 No.2
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• pp.703-706
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• 2002

Piezoelectric thin film such as ZnO and AlN can be applicable to FBAR (Film Bulk Acoustic Resonator) device of thin film type and FBAR can be applicable to MMIC. The characteristic of FBAR device is variable according to the deposition conditions of piezoelectric thin film when preparation of thin film by sputtering method. In this study, we prepared ZnO thin film for FBAR using Facing Targets Sputtering apparatus which can be deposited fine Quality thin film because temperature increase of substrate due to the bombardment of high-energy particles can be restrained. And crystalline and c-axis preferred orientation of ZnO thin film with deposition conditions was investigated by XRD.