• 제목/요약/키워드: piezoelectric effect

검색결과 648건 처리시간 0.022초

직선 이송축의 3자유도 오차 보정을 위한 미세 구동 스테이지 개발 및 성능 평가 (Development and Performance Evaluation of Fine Stage for 3-DOF Error Compensation of a Linear Axis)

  • 이재창;이민재;양승한
    • 한국정밀공학회지
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    • 제34권1호
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    • pp.53-58
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    • 2017
  • A fine stage is developed for the 3-DOF error compensation of a linear axis in order to improve the positioning accuracy. This stage is designed as a planar parallel mechanism, and the joints are based on a flexure hinge to achieve ultra-precise positioning. Also, the effect of Abbe's offsets between the measuring and driving coordinate systems is minimized to ensure an exact error compensation. The mode shapes of the designed stage are analyzed to verify the desired 3-DOF motions, and the workspace and displacement of a piezoelectric actuator (PZT) for compensation are analyzed using forward and inverse kinematics. The 3-DOF error of a linear axis is measured and compensated by using the developed fine stage. A marked improvement is observed compared to the results obtained without error compensation. The peak-to-valley (PV) values of the positional and rotational errors are reduced by 92.6% and 91.3%, respectively.

광로차 보상회로가 부착된 마이켈슨 간섭계에 의한 탄성파 신호검출 (Detection of Elastic Waves Using Stabilized Michelson Interferometer)

  • 김영환;소철호;권오양
    • 비파괴검사학회지
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    • 제13권4호
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    • pp.32-41
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    • 1994
  • 탄성파에 의한 미소 동적 변위를 측정하기 위하여 안정화 회로가 부착된 Michelson 간섭계를 개발하였다. 안정화 회로는 외부 진동신호에 따른 광로차의 교란을 보상하기 위하여 압전구동기가 부착된 기준거울을 사용하였다. 안정화 회로를 사용함으로써, 간섭계는 외부 진동신호의 영향을 줄일 수 있었고, 항상 직각조건(quadrature condition)을 만족하여 광검출기의 출력신호가 최대의 감도와 선형성을 유지할 수 있었다. 검출가능한 최소 변위는 10MHz 대역에서 0.3nm 이었다. 개발된 간섭계를 사용하여 유리관 파괴 및 강철구 충격에 의한 진앙점에서의 변위를 검출하여 이론적으로 계산된 값과 비교하였다.

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작동기 히스테리시스를 고려한 유연 피에조빔의 위치추적제어 (Position Tracking Control of Flexible Piezo-beam Considering Actuator Hysteresis)

  • 프엉박;최승복
    • 한국소음진동공학회논문집
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    • 제20권2호
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    • pp.129-137
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    • 2010
  • 이 논문에서는 압전작동기를 이용하여 유연 보 구조물의 위치추적제어를 실험적으로 고찰하였다. 작동기의 히스테리시스 특성을 보상하기 위한 앞먹임 보상기와 PID 되먹임 제어기를 함께 구성하여 정밀한 위치 추적제어를 수행할 수 있도록 하였다. 히스테리시스 보상기는 압전작동기의 예측 변위를 바탕으로 한 프라이작 모델을 사용하여 구성하였다. 히스테리시스 보상기의 유무에 따른 PID 되먹임 제어의 성능을 조화가진과 랜덤 가진 실험을 통하여 평가하였으며, 보상기와 되먹임 제어기를 함께 사용하였을 때, 우수한 위치추적제어 성능을 가지는 것을 확인하였다.

CIM 기술로 제조한 1-3 형 압전복합체의 물성 평가 (Material Properties Evaluation of 1-3 type Piezo-composite Fabricated with CIM Technology)

  • 임종인;신호용;김종호;임수진
    • 한국소음진동공학회:학술대회논문집
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    • 한국소음진동공학회 2012년도 춘계학술대회 논문집
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    • pp.196-199
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    • 2012
  • Generally the piezo-composites have superior hydrostatic response characteristics than PZT ceramics due to both the stress amplification effect in axial direction and stress reduction effects in radial direction. This paper described material properties of a 1-3 type piezo-composite that fabricated with ceramic injection molding (CIM) technology. The electro-mechanical performances of the composite have been analyzed using FEM and the physical properties of the composite have been measured with the vol. % of the PZT ceramics. Based on the results, the $k_t$ increased rapidly as the vol. % of the PZT ceramics increased up to 30 vol. % and saturated the constant value in the above region. Also the experimental results have good agreement with the simulation values of the composite. Finally we developed the composites having high piezoelectric properties than the PZT ceramics with the CIM technology.

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Effect of DyFeO3 Addition on Crystal Structure and Ferrcelectricity of the BiFeO3-PbTiO3 System

  • Kim, Seong-Seog;Kwon, Jong-Uk;Cheon, Chae Il
    • 한국세라믹학회지
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    • 제42권5호
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    • pp.299-303
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    • 2005
  • The crystal structure and ferroelectricity of the $(1-x)BiFeO_3\;(BF)-xPbTiO_3$ (PT) ceramic system with the addition of $DyFeO_3$ (DF) have been investigated for attaining a high temperature piezoelectric material. This study is focused on the relation between crystal structure and ferroelectric property with the addition of DF over the phase boundary in the (1-x)BF-xPT system. Hysteresis curves of polarization-electric field at room temperature have been measured. The X-ray and neutron diffraction data were analyzed by the rietveld refinement method. The addition of 0.1 mole DF into BF-PT system greatly increases the ferroelectric remanant polarization Pr values, e.g. 17 ${\mu}C/cm^2$ in 0.6BF-yDF-(0.4-y)PT and 31${\mu}C/cm^2$ in 0.5BF-yDF-(0.5.y)PT, respectively. The improved Pr value has been discussed in relation with crystal structure and electrical property.

세라믹 사출성형기술로 제조한 1-3형 압전복합체의 물성 평가 (Material Properties Evaluation of 1-3 type Piezo-composite Fabricated with Ceramic Injection Molding Technology)

  • 신호용;김종호;임수진;임종인
    • 한국세라믹학회지
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    • 제48권6호
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    • pp.648-653
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    • 2011
  • Generally the piezo-composites have superior hydrostatic response characteristics than PZT ceramics due to both the stress amplification effect in axial direction and stress reduction effects in radial direction. This paper described material properties of a 1-3 type piezo-composite that fabricated with ceramic injection molding (CIM) technology. The electro-mechanical performances of the composite have been analyzed using FEM and the physical properties of the composite have been measured with the vol% of the PZT ceramics. Based on the results, the $k_t$ increased rapidly as the vol% of the PZT ceramics increased up to 30 vol% and saturated the constant value in the above region. Also the experimental results have good agreement with the simulation values of the composite. Finally we developed the composites having high piezoelectric properties than the PZT ceramics with the CIM technology.

?Growth and Characterization of InGaN/GaN MQWs on Two Different Types of Substrate

  • Kim, Taek-Sung;Park, Jae-Young;Cuong, Tran Viet;Hong, Chang-Hee
    • JSTS:Journal of Semiconductor Technology and Science
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    • 제6권2호
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    • pp.90-94
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    • 2006
  • We report on the growth and characterization of InGaN/GaN MQWs on two different types of sapphire substrates and GaN substrates. The InGaN/GaN MQWs are grown by using metalorganic chemical vapor deposition. Our analysis of the satellite peaks in the HRXRD patterns shows, GaN substrates InGaN/GaN MQW compared to sapphire substrates InGaN/GaN MQW, more compressive strain on GaN substrates than on sapphire substrates. However, results of optical investigation of InGaN/GaN MQWs grown on GaN substrates and on sapphire substrates, which have lower Stokes-like shift of PL to GaN substrates compared to sapphire substrates, are shown to the potential fluctuation and the quantum-confined Stark effect induced by the built-in internal field due to spontaneous and straininduced piezoelectric polarizations. The InGaN/GaN MQWs are shown to quantify the Stokes-like shift as a function of x.

$La_2O_3$의 첨가가 PZN-BT-PT 세라믹스의 구조적, 전기적 특성에 미치는 영향 (An Effect on the Structural, Electrical Characteristis of PZN-BT-PT Ceramics according to the Variations of $La_2O_3$ Additon Amount)

  • 박성환;윤현상;백동수;이두희;박창엽
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 1992년도 추계학술대회 논문집
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    • pp.42-45
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    • 1992
  • In this study, the structural, dielectric and electrical properties of $0.85Pb(Zn_{1/3}Nb_{2/3})O_3-0.1BaTiO_3-0.05PbTiO_3$ ceramics were investigated with respect to the variations of $La_2O_3$ addition amount. The specimen with 0.2 [wt%] $La_2O_3$ addition amount, which has the coupling constants with the value of $k_p$=44.8[%]. $k_{31}$=25.4[%] and the piezoelectric constant with $d_{31}=100{\times}10^{-12}$[C/N] respectively, exhibits the relatively good values in the applications of electrostriction actuators.

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3C-SiC 버퍼층이 Si 기판위에 스퍼터링된 AlN 막의 특성에 미치는 영향 (Effect of 3C-SiC buffer layer on the characteristics of AlN films supttered on Si Substrates)

  • 류경일;정귀상
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2009년도 춘계학술대회 논문집
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    • pp.3-6
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    • 2009
  • Aluminum nitride (AIN) thin films were deposited on a polycrystalline 3C-SiC intermediate layer by a pulsed reactive magnetron sputtering system. Characteristics of the AIN/SiC heterostructures were investigated by field emission scanning electron microscopy (FE-SEM), atomic force microscopy (AFM), X-ray diffraction (XRD), and Fourier transform infrared spectroscopy (FT-IR). The columnar structure of AIN thin films was observed by FE-SEM. The surface roughness of AlN films on the 3C-SiC buffer layer was measured using AFM. The XRD pattern of AlN films on SiC buffer layers was highly oriented at (002). Full width at half maximum (FWHM) of the rocking curve near (002) reflections was $1.3^{\circ}$. The infrared absorbance spectrum indicated that the residual stress of AIN thin films grown on SiC buffer layers was nearly negligible. The 3C-SiC intermediate layers are promising for the realization of nitride based electronic and mechanical devices.

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끝단에 스프링과 질량을 가진 단진보의 자유진동해석 (Free Vibration Analysis of a Stepped Cantilever Beam with a Mass and a Spring at the End)

  • 유춘성;홍동표;정태진;정길도
    • 대한기계학회논문집A
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    • 제20권9호
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    • pp.2812-2818
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    • 1996
  • A cantilever beam with a mass and a spring at the end can be use to model a miniature flexible arm. It is necessary to know the natural frequencies and mode shapes to discuss its free vibration, especially when modal analysis is employed. A beam is clamped-free. In this paper we look at the lateral vibration of beams that have step changes in the properties of their cross sections. The frequency equation is derived by Bernoulli-Euler formulation and is sloved by the separation of variable. The parameters of the beam, 'mass and spring stiffness' are defined as nondimensionalized parameters for wide application of the results. According to the change of eigenvalues and mode shape are presented for this beam. The results presented are the eigenvalues and the natural frequencies for the first three modes of vibration. Results show that the parameters have a significant effect on the natural frequency.