• Journal of Magnetics
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• v.9 no.3
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• pp.79-82
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• 2004

The structure and magnetic properties of Fe-Ni-N/Cu multilayered films, prepared by the DC magnetron sputter, as a function of different thicknesses of Fe-Ni-N ($t_{FeNiN}$) and Cu ($t_Cu$) layers have been studied by the methods of x-ray diffraction and measurement of magnetic moment. It has been found that the enhancement of (200) orientation in Fe-Ni-N layers is observed at the ratio of layer thickness with about $t_{FeNiN}/t_{Cu}$ $\underline{\simeq}$ 3.75. The reduction of magnetization due to the formation of interdiffusion near the interface is explained by means of the dead layer model. The temperature dependence of magnetization exhibits the feature of Blochs $T^{\frac{2}{3}}$ law. The layer thickness dependence of Curie temperature has been discussed by critical temperature theory of Heisenberg model.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.250-250
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• 2012

Recently, multiferroic materials have attracted much attention due to their fascinating fundamental physical properties and potential technological applications in magnetic/ferroelectric data storage systems, quantum electromagnets, spintronics, and sensor devices. Among single-phase multiferroic materials, $BiFeO_3$, in particular, has received considerable attention because of its very interesting magnetoelectric properties for application to spintronics. Enhanced ferromagnetism was found by Fe-site ion substitution with magnetic ions. In this study, $BiFe_{1-x}Ni_xO_3$ (x=0 and 0.05) bulk ceramic compounds were prepared by solid-state reaction and rapid sintering. High-purity $Bi_2O_3$, $Fe_3O_4$ and NiO powders were mixed with the stoichiometric proportions, and calcined at $450^{\circ}C$ for 24 h to produce $BiFe_{1-x}Ni_xO_3$. Then, the samples were directly put into the oven, which was heated up to $800^{\circ}C$ and sintered in air for 20 min. The crystalline structure of samples was investigated at room temperature by using a Rigaku Miniflex powder diffractometer. The Raman measurements were carried out with a Raman spectrometer with 514.5-nm-excitation Ar+-laser source under air ambient condition on a focused area of $1-{\mu}m$ diameter. The field-dependent magnetization and the temperature-dependent magnetization measurements were performed with a vibrating-sample magnetometer. The x-ray diffraction study demonstrates the compressive stress due to Ni substitution at the Fe site. $BiFe_{0.95}Ni_{0.05}O_3$ exhibits the rhombohedral perovskite structure R3c, similar to $BiFeO_3$. The lattice constant of $BiFe_{0.95}Ni_{0.05}O_3$ is smaller than of $BiFeO_3$ because of the smaller ionic radius of Ni3+ than that of Fe3+. The field-dependent magnetization of $BiFe_{0.95}Ni_{0.05}O_3$ exhibits a clear hysteresis loop at 300 K. The magnetic properties of $BiFe_{0.95}Ni_{0.05}O_3$ were improved at room temperature because of the existence of structurally compressive stress.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.7 no.1
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• pp.70-75
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• 1997

An improved technique based upon an electron beam evaporation system has been developed to prepare cubic thin films In crystalline semiconductors. Zinc blonde CdSe epilayers were grown on GaAs(100) substrate by an e-beam evaporation method. The lattice parameter obtained from (400) reflection is $6.077\AA$, which is in excellent agreement with the value reported in the literature for zinc blonde CdSe. The orientation of the as-grown CdSe epilayer is determined by electron channeling patterns. The crystallinity of epitaxial CdSe layers were investigated on the double crystal X-ray rocking curve. The carrier concentration and mobility of epilayers deduced by Hall effect measurement are about $10^{18}{\textrm}{cm}^{-3}$, $10^2\textrm{cm}^2/V{\cdot}sec$ at room temperature, respectively. The photocurrent spectrum peak of the epilayer at 30 K exhibits a sharp change at 1.746 eV due to the free exciton of cubic CdSe.

• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.169.2-169.2
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• 2015

$VO_2$ is a well-known a metal-to-insulator-transition (MIT) material, accompanied with a first order structural phase transition near room temperature. Because of the structural phase transition and the MIT occur near a same temperature, there is an ongoing argument whether the MIT is induced by the structural phase transition. $VO_2$ exhibits a relatively weak anti-oxidization ability and can be oxidized to higher-valence oxides (e.g., $V_4$ $O_7$ or $V_2$ $O_5$) when annealed at a high temperature in an oxygen-rich atmosphere. We fabricated $VO_2$ films on $Al_2$ $O_3$ (0001) substrates using a DC magnetron sputtering deposition process with carefully control the $O_2$ percentage in an atmosphere. X-ray diffraction measurements from the films showed only (0l0) peaks with no extra peaks, indicating b-oriented films. The temperature-dependent local structural properties of $VO_2$ films were investigated by using in-situ X-ray absorption fine structure (XAFS) measurements at the V K edge. XAFS revealed that the structural phase transition was occurred nearly $70^{\circ}C$ for heating process and reproducible. Resistance measurements as a function of temperature (R-T) demonstrated that the resistance of $VO_2$ films was changed by a factor of 4 near $75^{\circ}C$ which was higher than $68^{\circ}C$ reported from a $VO_2$ bulk. We will discuss the MIT of $VO_2$ films, comparing with the local structural properties determined by XAFS measurements.

• Proceedings of the Korean Magnestics Society Conference
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• 2010.06a
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• pp.96-96
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• 2010

We report the proper resistance-area products in the single crystalline bcc CoFe/MgO tunnel contact on nondegenerate n-Ge desirable for efficient spin injection and detection at room temperature. The electric properties of the crystalline CoFe(5 nm)/MgO(1.5,2.0,2.5 nm)/n-Ge(001) tunnel contacts have been investigated by I-V-T and C-V measurements. Interestingly, the tunnel contact with the 2-nm MgO exhibits the ohmic behavior with low resistance-area products, satisfying the theoretical conditions required for significant spin injection and detection. This result is ascribed to the presence of MgO layer between CoFe and n-Ge, enhancing the Schottky pinning parameter as well as shifting the charge neutrality level.

• Transactions on Electrical and Electronic Materials
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• v.16 no.3
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• pp.130-134
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• 2015

This research proposes the use of a composition modulated (ZrO₂)_x(Al₂O₃)_1-x film as a charge trapping layer for charge trap flash memory; this is possible when the Zr (Al) atomic percent is controlled to form a variable bandgap as identified by the valence band offsets and electron energy loss spectrum measurements. Compared to memory devices with uniform compositional (ZrO₂)_0.1(Al₂O₃)_0.9 or a (ZrO₂)_0.92(Al₂O₃)_0.08 trapping layer, the memory device using the composition modulated (ZrO₂)_x(Al₂O₃)_1-x as the charge trapping layer exhibits a larger memory window (6.0 V) at the gate sweeping voltage of ±8 V, improved data retention, and significantly faster program/erase speed. Improvements of the memory characteristics are attributed to the special energy band alignments resulting from non-uniform distribution of elemental composition. These results indicate that the composition modulated (ZrO₂)_x(Al₂O₃)_1-x film is a promising candidate for future nonvolatile memory device applications.

• Korean Journal of Metals and Materials
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• v.47 no.8
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• pp.500-507
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• 2009

Pb-free solder has recently been used in electronics in efforts to meet environmental regulations, and a number of Pb-free solder alloy choices beyond the near-eutectic SnAgCu solder are now available. With increased demand for thin and portable electronics, the high cost of alloys containing significant amounts of silver and their poor mechanical shock performance have spurred the development of low Ag SnAgCu solder, which provides improved mechanical performance at a reasonable cost. Although low Ag SnAgCu solder exhibits significantly higher fracture resistance under high-strain rates, little thermal fatigue data exist for this solder. Therefore, it is necessary to investigate thermal fatigue reliability of low Ag SnAgCu solder under variation of thermal stress in order to allow its implementation in electronic products with high reliability requirements. In this study, the reliability of Sn0.3Ag0.7Cu(SAC0307), a low Ag solder alloy, is discussed and compared with that of Sn3Ag0.5Cu(SAC305). Three sample types and six samples size are evaluated. Mechanical properties and microstructure of the solder joint are investigated under thermal shock cycles. It was observed that the mechanical strength of SAC0307 dropped slightly with thermal cycling relative to that of SAC305. This reveals that the failure mode of SAC0307 is different from that SAC305 under this critical condition.

• Progress in Superconductivity and Cryogenics
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• v.25 no.2
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• pp.5-9
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• 2023

The effect of La_0.7Sr_0.3MnO₃ (LSMO) addition on the superconducting property of Bi_1.6Pb_0.4Sr₂Ca₂Cu₃O_10+δ ((Bi, Pb)-2223) polycrystalline samples was studied. LSMO (0.3 wt.% to 2.0 wt.%) added (Bi, Pb)-2223 samples were prepared by using a solid-state reaction method. The XRD analyses show that as the LSMO addition increases, the volume fraction of the Bi-2223 phase is gradually decreased. The critical temperature (T_c) exhibits a gradual decrease with a single transition as the LSMO amount increases up to 1.0 wt.%, but a further addition of LSMO induces an abrupt decrease of T_c with a dual transition. The analyses on the local structure of the CuO₂ plane from the X-ray absorption fine structure (EXAFS) measurements showed that for the samples with low concentration of LSMO up to 1.0 wt.%, the Cu-O bond length and the CuO₂ plane ordering do not degrade from the values of pure (Bi, Pb)-2223, while they get worsen with a further increase of LSMO addition. These results open up the possibility of LSMO as artificial pinning centers of the (Bi, Pb)-2223 system for power application.

• Bulletin of the Korean Chemical Society
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• v.26 no.11
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• pp.1807-1818
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• 2005

New PPV based conjugated polymers, containing terphenyl units, were prepared as the electroluminescent (EL) layer in light-emitting diodes (LEDs). The prepared polymers, poly[2,5-bis(4-(2-etylhexyloxy)phenyl)-1,4-phenylenevinylene] (BEHP-PPV), poly[2-(2-ethylhexyloxy)-5-(4-(4-(2-etylhexyloxy)phenyl)phenyl)-1,4-phenylenevinylene] (EEPP-PPV) and poly[2-(2-ethylhexyloxy)-5-(9,9-bis(2-etylhexyl)fluorenyl)-1,4 phenylenevinylene] (EHF-PPV), were soluble in common organic solvents and used as the EL layer in double layer light-emitting diodes (LEDs) (ITO/PEDOT/polymer/Al). The polymers were prepared by the Gilch reaction. The number-average molecular weight $(M_n)$, weight-average molecular weight $(M_w)$, and the polydispersities (PDI) of these polymers were in the range of 9000-58000, 27000-231000, 2.9-3.9, respectively. These polymers have quite good thermal stability with decomposition starting above 320-350. The polymers show photoluminescence (PL) with maximum peaks at around 526-562 nm (exciting wavelength, 410 nm) and blue EL with maximum peaks at around $\lambda_{max}$ = 526-552 nm. The current-voltageluminance (I-V-L) characteristics of polymers show turn-on voltages of 5 V. Even though both of EEPP-PPV and BEHP-PPV have the same terphenyl group in the repeating unit, EEPP-PPV with directly substituted alkoxy group in the back bone has longer effective conjugation length than BEHP-PPV, and exhibits red shift in the PL spectra. Both of EEPP-PPV and EHF-PPV have ter-phenyl units and directly substituted alkoxy group in back bone. EHF-PPV with fluorenyl unit attached to the PPV backbone has shorter effective conjugation length than EEPP-PPV with biphenyl unit, and exhibits blue shift in the PL spectra.

• Bulletin of the Korean Chemical Society
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• v.27 no.7
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• pp.1043-1047
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• 2006

New electroluminescence polymer, poly(5,10-dihexyl-5,10-dihydroindolo[3,2-b]indole-2,7-diyl) (PININO) was synthesized by Yamamoto conditions with Ni(0) catalyst. The full characterization of structures and properties as well as the performances of the electroluminescence devices of the new polymer are presented. The resulting polymer, which exhibits good solubility in common organic solvents, was used as the electroluminescence layer for the light-emitting diodes (LEDs) (ITO/PEDOT/polymer/Al). PININO shows turn-on voltage of 2.5 V, and electroluminescence (EL) with maximum peak at 490 nm, maximum brightness of 40 cd/$m^{2}$ at 8 V, and efficiency of 0.002 cd/A at 350 mA/$cm^{2}$.