• Journal of Convergence for Information Technology
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• v.10 no.8
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• pp.137-143
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• 2020

This study examined the effects of rapid thermal annealing (RTA) on the physical and chemical characteristics of thin silver (Ag) layers on SiO2 coated metal foils. Ag layers were annealed at various temperatures of the range between 150 ℃ and 550 ℃ for 20 min. The surface roughness and resistivity are increased at the annealing temperatures of 550 ℃. We also found that oxygen (O) and silicon (Si) atoms exist at the Ag film surface by using compositional analysis in the annealing temperatures of 550 ℃. The total reflectance is decreased with increasing temperature. These phenomena are due to an out-diffusion of Si atoms from SiO2 layers during the RTA annealing. The results offer the possibility of using it as a substrate for various flexible optoelectronic devices.

• Journal of Korea Foundry Society
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• v.26 no.6
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• pp.267-271
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• 2006

Metal foam is a class of attractive materials, which exhibits unique combinations of physical, mechanical, thermal, electrical and acoustic properties. In particular, it is light and good at absorbing energy, which makes it attractive in automotive and aerospace applications weight is critical. In this paper, the Mg alloy foam was prepared by melt foaming method by addition of calcium as thickening agent, and $TiH_2$ or $CaCO_3$ powder as blowing agent. The macrostructural observation of foamed Mg showed that the pore structures of Mg alloy foam made by $CaCO_3$ as blowing agent were much better than that of foams made by $TiH_2$ as blowing agent. In addition, this paper showed the possible reason of fabrication magnesium alloy foam in proportion to blowing agent and the porosity range was about 40 to 76% as results value.

• Journal of Korean Ophthalmic Optics Society
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• v.6 no.1
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• pp.111-117
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• 2001

The temperature dependence of dielectric constant and electrical conductivity for the BBPS glasses system was studied over a temperature range between $30^{\circ}C$ and $500^{\circ}C$ and at a frequency ranged from $10^3$ Hz to $10^7$ Hz. The dielectric constant ${\varepsilon}$ at room temperature of $xB_2O_3-yBi_2O_3-zPbO-5SiO_2 $ glasses was measured to be 15 at $10^5$ Hz for all samples and found to be almost frequency independent. At the relatively low temperature ranger (<$70^{\circ}C$), the dielectric constant was almost temperature independent and above that it increased with increasing temperature: the rate of increase being different at different frequencies. This behavior could be explained on the basis of the presence of molecular dipoles. The dielectric constant was found to depend on the composition as well as the crystalline phases formed in the glass matrix.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.10 no.1
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• pp.5-12
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• 2000

As a semiconductor material for electronic devices operated under extreme environmental conditions, silicon carbides (SiCs) have been intensively studied because of their excellent electrical, thermal and other physical properties. The growth characteristics of single- crystalline 6H-SiC homoepitaxial layers grown by a thermal chemical vapor deposition (CVD) were investigated. Especially, the successful growth condition of 6H-SiC homoepitaxial layers using a SiC-uncoated graphite susceptor that utilized Mo-plates was obtained. The CVD growth was performed in an RF-induction heated atmospheric pressure chamber and carried out using off-oriented ($3.5^{\circ}$tilt) substrates from the (0001) basal plane in the <110> direction with the Si-face side of the wafer. In order to investigate the crystallinity of grown epilayers, Nomarski optical microscopy, transmittance spectra, Raman spectroscopy, XRD, Photoluninescence (PL) and transmission electron microscopy (TEM) were utilized. The best quality of 6H-SiC homoepitaxial layers was observed in conditions of growth temperature $1500^{\circ}C$ and C/Si flow ratio 2.0 of $C_3H_8$ 0.2 sccm & $SiH_4$ 0.3 sccm.

• The Journal of the Acoustical Society of Korea
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• v.35 no.6
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• pp.445-451
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• 2016

It is very important to obtain non-agglomerated nano particle state for practical application of nano technology. In order to improve the functionality of products using nano particles, more precise control of particle size distribution is required in their synthesis process. However, synthesized nano particles are agglomerated easily due to physical and chemical reasons, and it then veils unique properties of the nano particles and causes some troubles in their practical application. In this study, a separation method for nano particles from suspension by using the droplets as the separation space was proposed. Using the suspension of 0.002 wt. % with $TiO_2$ powder, the particle size distribution of nano particles in the recollected suspension was measured. From the results, it was confirmed that it is possible to separate and to recollect the nano particles monodispersed by using the suggested method.

• Advances in nano research
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• v.5 no.4
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• pp.281-301
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• 2017

In this disquisition, an exact solution method is developed for analyzing the vibration characteristics of magneto-electro-elastic functionally graded (MEE-FG) beams by considering porosity distribution and various boundary conditions via a four-variable shear deformation refined beam theory for the first time. Magneto-electroelastic properties of porous FG beam are supposed to vary through the thickness direction and are modeled via modified power-law rule which is formulated using the concept of even and uneven porosity distributions. Porosities possibly occurring inside functionally graded materials (FGMs) during fabrication because of technical problem that lead to creation micro-voids in FG materials. So, it is necessary to consider the effect of porosities on the vibration behavior of MEE-FG beam in the present study. The governing differential equations and related boundary conditions of porous MEE-FG beam subjected to physical field are derived by Hamilton's principle based on a four-variable tangential-exponential refined theory which avoids the use of shear correction factor. An analytical solution procedure is used to achieve the natural frequencies of porous-FG beam supposed to magneto-electrical field which satisfies various boundary conditions. A parametric study is led to carry out the effects of material graduation exponent, porosity parameter, external magnetic potential, external electric voltage, slenderness ratio and various boundary conditions on dimensionless frequencies of porous MEE-FG beam. It is concluded that these parameters play noticeable roles on the vibration behavior of MEE-FG beam with porosities. Presented numerical results can be applied as benchmarks for future design of MEE-FG structures with porosity phases.

• Current Applied Physics
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• v.18 no.12
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• pp.1513-1522
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• 2018

Bismuth telluride ($Bi_2Te_3$) thin films were prepared with various electrolyte temperatures ($10^{\circ}C-70^{\circ}C$) and concentrations [$Bi(NO_3)_3$ and $TeO_2:1.25-5.0mM$] in this study. The surface morphologies differed significantly between the experiments in which these two electrodeposition conditions were separately adjusted even though the applied current density was in the same range in both cases. At higher electrolyte temperatures, a dendrite crystal structure appeared on the film surface. However, the surface morphology did not change significantly as the electrolyte concentration increased. The dendrite crystal structure formation in the former case may have been caused by the diffusion lengths of the ions increasing with increasing electrolyte temperature. In such a state, the reactive points primarily occur at the tops of spiked areas, leading to dendrite crystal structure formation. In addition, the in-plane thermoelectric properties of $Bi_2Te_3$ thin films were measured at approximately 300 K. The power factor decreased drastically as the electrolyte temperature increased because of the decrease in electrical conductivity due to the dendrite crystal structure. However, the power factor did not strongly depend on the electrolyte concentration. The highest power factor [$1.08{\mu}W/(cm{\cdot}K^2$)] was obtained at 3.75 mM. Therefore, to produce electrodeposited $Bi_2Te_3$ films with improved thermoelectric performances and relatively high deposition rates, the electrolyte temperature should be relatively low ($30^{\circ}C$) and the electrolyte concentration should be set at 3.75 mM.

• Proceedings of the KIEE Conference
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• 2001.11a
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• pp.112-114
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• 2001

In this letter, we report on the investigation of Si/Ti, Pt/Si/Ti, Co/Si/Ti Ohmic contacts to p-type 4H-SiC. The contacts were formed by a 2-step vacuum annealing at $550^{\circ}C$ for 5 min, $850^{\circ}C$ for 2 min respectively. The contact resistances were measured using the transmission line model method, which resulted in specific $10^{-4}{\Omega}cm^2$, and the physical properties of the contactcontact resistivities in the $9.2{\times}10^{-4}$, $7.1{\times}10^{-4}$ and $4.5{\times}s$ were examined using microscopy, AES(auger electron spectroscopy). AES analysis has shown that, at this anneal temperature, there was a intermixing of the Ti and Si, migration of into SiC. Overlayer of Pt, Co had the effect of decreasing the specific contact resistivity and improving the surface morphology of the annealed contact.

• Journal of the Institute of Electronics and Information Engineers
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• v.51 no.3
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• pp.177-184
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• 2014

In chemical vapor deposition(CVD) tungsten silicide(WSix) dual poly gate(DPG) scheme, we observed the fluorine effects on gate oxide using the electrical and physical measurements. It is found that in fluorine-rich WSix NMOS transistors, the gate thickness decreases as gate length is reduced, and it intensifies the roll-off properties of transistor. This is because the fluorine diffuses laterally from WSix to the gate sidewall oxide in addition to its vertical diffusion to the gate oxide during gate re-oxidation process. When the channel length is very small, the gate oxide thickness is further reduced due to a relative increase of the lateral diffusion than the vertical diffusion. In PMOS transistors, it is observed that boron of background dopoing in $p^+$ poly retards fluorine diffusion into the gate oxide. Thus, it is suppressed the fluorine effects on gate oxide thickness with the channel length dependency.

• Korean Journal of Materials Research
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• v.9 no.7
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• pp.707-714
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• 1999

To save electrical energy as much as 40 % for fluorescent lighting, the reflectors coated with silver reflective thin films recently became popular with higher reflectivities and long life. The thin films fabricated by using sputtering techniques are produced mainly in U.S.A. On the other hand, some silver films deposited by using evaporation methods show low adhesion in general, although the reflectivity is no problem. We have studied various PVD methods to obtain thin films with high reflectivity and adhesion on a substrate of polyester, for a couple of years. Silver films manufactured byusing evaporation showed the reflectivity of 96.4 % and the adhesion of $12 kg/\textrm{cm}^2$. while samples manufactured by using sputtering depicted the adhesion as much as $20 Kg/\textrm{cm}^2$ that is almost double, although their reflectivity was not much different. X-ray diffraction spectra for the sputtered films demonstrated a preferential growth on (111) plane and the cross-sections of the specimens revealed a dense columnar structure to result in the enhanced adhesion.