• Composites Research
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• v.33 no.2
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• pp.81-89
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• 2020

In this review paper, we introduce recent research studied effective physical properties of the reinforced composite using mean-field homogenization. We address homogenization for effective stiffness and expand it to effective thermal/electrical conductivity and dielectric constant. Multiphysics problems like piezoelectricity and thermoelectricity are considered by simplifying the constitutive equation into the linear equations like Hooke's law. We present a generalized theoretical formula for predicting effective physical properties of composite and validation by against finite element analysis.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.05a
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• pp.150-153
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• 1999

The electrical and physical characteristics of MgO and Pt thin-films on Si wafers deposited by r.f magnetron sputtering, were analyzed with annealing condition(100$0^{\circ}C$, 120 min) by four point probe, SEM and XRD. Until annealing temperature of 100$0^{\circ}C$, MgO had the properties of improving Pt adhesion to SiO$_2$ and insulation without chemical reaction to Pt thin-films and the resistivity of Pt thin-films was improved. The thermal characteristics of Pt micro-heater were analyed with Pt-RTD integrated on the same substrate, In the analysis of properties of Pt-RTD, TCR value had 3927 ppm/$^{\circ}C$ and liner in the temperature range of 25~40$0^{\circ}C$ temperature of Pt micro-heater had up to 40$0^{\circ}C$ with 1.5 watts of the heating power.

• Journal of the Korean Society of Safety
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• v.14 no.2
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• pp.83-89
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• 1999

The electrical properties due to mixture ratio of linear low density polyethylene(LLDPE) and ethylene vinyl acetate(EVA) films are studied. An experimental specimen is selected as LLDPE/EVA of thickness 200${\mu}{\textrm}{m}$ produced by mixture ratio of 50 : 50, 60 : 40, 70 : 30 and 80 : 2 wt%. In temperature range from $25^{\circ}C$ to 12$0^{\circ}C$, the measurement of volume resistivity using a highmegohm meter is performed within 10 minutes since each voltage of DC 100 V, 250 V, 500 V and 1000 V is applied, according to the step voltage method. From FT-IR spectrum for an analysis of physical properties, it can be confirmed that LLDPE blended with EVA shows an absence of carbonyl groups(1735 $cm^{-1}$, C=0) and ether groups(1242 $cm^{-1}$, C-O). The peak of LLDPE and EVA made of mixture ratio of 70 : 30 at 2$\theta$ =21.4$^{\circ}$ in the results of XRD is higher than the others. In the experiment for volume resistivity characteristics in order to investigate the electrical properties of specimen, it is confirmed that volume resistivity is decreased with the increase of the molecular motion and temperature.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.19 no.1
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• pp.52-57
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• 2006

Precision thin film resistors using evanohm R alloy were fabricated by do magnetron sputtering method. The physical and electrical properties of the resistors were studied after treatment of thermal annealing. The crystallization of the film was increased as the annealing temperature increase. Diffusion and oxidation of Cr and Al elements were occurred into the film surface. The minimum TCR values of 10.46 ppm/$^{\circ}C$ and 10.65 ppm/$^{\circ}C$ were measured at the annealing temperatures of $200^{\circ}C$ and $300^{\circ}C$, respectively. We are conducting additional studies to improve characteristics of our resistors for practical device application.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.14 no.3
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• pp.215-222
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• 2001

Polyaniline-Camphorsulfonic Acid Emeraldine Salt(PANI-CSA ES) was prepared by doping Polyaniline Ermeralidine Base(PANI EB) with DL-10-Camphorsulfonic Acid(CSA). PANI-CSA ES was solved in an organic solvent by ultrasonification for different periods of time and its surface resistivity was measured. Several PANI-CSA ES solutions solved in different organic solvents were prepared and their surface resistivities were measured. Thermal stability of film casted with PANI-CAS ES solution in m-cresol was estimated by measuring its surface conductivity and the content of this moisture and organic solvents. PANI-CSA ES was blended with different polymeric binders to improve its physical properties and the surface resistivities of several kinds of PANI-CSA ES blends were measured as a function of the content of PANI-CSA ES. PANI-CSA ES polymerized by 1-step oxidative polymerization was prepared and its surface resistivity was measured.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1996.05a
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• pp.244-247
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• 1996

We had experiment using LB method that can fabricate molecular order ultra-thin film below 100${\AA}$. LB method has known as main technology of information society in 21C, because it is not only free orientation and alignment of molecular but also ability of thickness control as molecular order. In this paper, the fabricated condition and physical properties of functional ultra-thin film of molecular order was investigated and highly efficient ultra-thin film capacitor was fabricated by using ultra-thin LB film for application as electronic device. Possibility of ultra-thin film capacitor was researched by analyzing and measuring electrical properties. Polyimide ultra-thin LB film capacitor was fabricated, ensured theoretically and experimentally its possibility in range of 10Hz∼lMHz through its frequency characteristics.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.35 no.2
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• pp.190-193
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• 2022

In this work, the effect of sputtering working pressure for the tellurium film and its thin-film transistor was investigated. The transfer characteristics of tellurium thin-film transistors were improved by increasing the working pressure during sputtering process. As increasing working pressure, physical and optical properties of Te films such as crystallinity, transmittance, and surface roughness were improved. Therefore, the improved transfer characteristics of Te thin-film transistors may originate from both improved interface properties between the silicon oxide gate dielectric layer and the tellurium active layer with an improved quality of Te film. In conclusion, the control of working pressure during sputtering would be important for obtaining high-performance tellurium-based thin film transistor

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1998.11a
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• pp.195-198
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• 1998

In this paper, the physical and the volume resistivity properties due to linear low density polyethylene(LLDPE)/ethylene vinyl acetate(EVA) blends are studied. In order to measure the volume resistivity properties. the micro electrometer is used, the range of temperature and applying voltage are 25 to 120[$^{\circ}C$], form 100 to 1000[V] respectively. From FT-IR spectrum, LLDPE blended with EVA shows an absence of carbonyl and ether groups. From the experimental result of the volume resistivity properties, it is confirmed that the volume resistivity is decreased, which was attributed to the increase of molecular motions with the increase of temperature.

• Design & Manufacturing
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• v.15 no.3
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• pp.7-12
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• 2021

Plastic injection molds used for rapid heating and cooling must minimize surface damage due to friction and maintain excellent thermal and low electrical conductivity. Accordingly, various surface treatments are being applied. The properties of Al₂O₃ coating and DLC coating were compared to find the optimal surface treatment method. Al₂O₃ coating was deposited by thermal spray method. DLC films were deposited by sputtering process in room temperature and high temperature PECVD (Plasma enhanced chemical vapor deposition) process in 723 K temperature. For the evaluation of physical properties, the electrical and thermal conductivity including surface hardness, adhesion and wear resistance were analyzed. The electrical resistance of the all coated samples was showed insulation properties of 24 MΩ/sq or more. Especially, the friction coefficient of high temp. DLC coating was the lowest at 0.134.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1995.11a
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• pp.67-70
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• 1995

Amorpous As$\sub$10/Ge$\sub$15/Te$\sub$75/ device shows the memory switching characterisite under d.c. bias. In bulk material, a-As$\sub$10/Ge/sub15/Te$\sub$75/s switching voltage range is above 100 volts. Our purposes in this gaudy are decreasing a switching threshold voltage, finding the properties of d.c., a.c. conduction, and the characterisitics of switching threshold voltage fur a-As$\sub$10/Ge$\sub$15/Te$\sub$75/. As the results, the d.c.and a.c. conductivities increase with temperature. From the data of conductivity, various electrical and physical properties are obtained experimentally. The switching threshold voltages decrease with increasing annealing temperature and time, but increase with increasing film thickness and distance of electrode for d.c. bias.