• Current Photovoltaic Research
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• v.3 no.1
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• pp.16-20
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• 2015

Ag addition in chalcopyrite materials is known to lead beneficial changes in aspects of structural and electronic properties. In this work, the effects of Ag alloying of $Cu(In,Ga)Se_2$-based solar cells has been investigated. Wide bandgap $(Ag,Cu)(In_{1-x},Ga_x)Se_2$ (x = 0.75~0.8) films have been deposited using a three-stage co-evaporation with various Ag/(Ag+Cu) ratios. With Ag alloying the $(Ag,Cu)(In_{1-x},Ga_x)Se_2$ (x~0.8) films were found to have greater grainsize and film thickness. Device were also fabricated with the $(Ag,Cu)(In_{1-x},Ga_x)Se_2$ (x~0.8) films and their J-V and quantum efficiency measurements were carried out. The highest-efficiency $(Ag,Cu)(In_{1-x},Ga_x)Se_2$ solar cell with Eg > 1.5 eV had an efficiency of 12.2% with device parameters $V_{OC}=0.810V$, $J_{SC}=21.7mA/cm^2$, and FF = 69.0%.

• Current Photovoltaic Research
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• v.4 no.3
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• pp.119-123
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• 2016

We discussed various cover glass substrates available for photovoltaic (PV) modules, and investigated the fabrication methods of light trapping structures for the efficiency enhancement of PV modules: wet and dry etching or laser and direct patternings. We also introduced the analysis of haze at etched glass surfaces as a function of wavelength and also presented a anti-reflection coating technology for PV module.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.25 no.4
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• pp.266-269
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• 2012

The most recently IGBT (insulated gate bipolar mode transistor) devices are in the most current conduction capable devices and designed to the big switching power device. Use this number of the devices are need to high voltage and low on-state voltage drop. And then in this paper design of field stop IGBT is insert N buffer layer structure in NPT planar IGBT and optimization design of field stop IGBT and trench field stop IGBT, both devices have a comparative analysis and reflection of the electrical characteristics. As a simulation result, trench field stop IGBT is electrical characteristics better than field stop IGBT.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.9
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• pp.713-717
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• 2011

This paper was carried out design of 600 V GaN power MOSFET Modeling. We decided trench gate type one for design. we carried out device and process simulation with T-CAD tools. and then, we have extracted optimal device and process parameters for fabrication. we have analysis electrical characteristics after simulations. As results, we obtained 600 V breankdown voltage and $0.4\;m{\Omega}cm^2ultra$ low on resistance. At the same time, we carried out field ring simulation for obtaining high voltage.

• Journal of the Korean Solar Energy Society
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• v.30 no.5
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• pp.85-92
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• 2010

At the beginning the 21st century, we are interested in renewable energy especially photovoltaic. So, we have been installed PV at the building roofs so that we call it building integrated photovoltaic. But strictly speaking, installing the PV on the roof is not building integrated. There are few BIPV designs especially for balcony. In the apartment building, roof is good installing place for PV, but its area was limited. Now a day, built apartment building's heights are more and more increased so that the performance of installed PV on the roof cannot be enough to use even the public use. Thereby, we need the new space in the building to install the PV except the building roof. This study suggests the building facade balcony as a new space to install the PV with building integrated PV design. Hence, in this study, we are designed the movable BIPV shading device for apartment building balcony, and verified its performance with computer simulation. Developed device in this study can works as an electronic generation device and an overhang on the side balcony. As a result, the electronic generation performance of device contributes 15~30% to each apartment unit. The more unit width increase, the better contributed device generates.

• Advances in nano research
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• v.2 no.1
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• pp.23-56
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• 2014

The significant growth of the Si photovoltaic industry has been so far limited due to the high cost of the Si photovoltaic system. In this regard, the most expensive factors are the intrinsic cost of silicon material and the Si solar cell fabrication processes. Conventional Si solar cells have p-n junctions inside for an efficient extraction of light-generated charge carriers. However, the p-n junction is normally formed through very expensive processes requiring very high temperature (${\sim}1000^{\circ}C$). Therefore, several systems are currently under study to form heterojunctions at low temperatures. Among them, carbon nanotube (CNT)/Si hybrid solar cells are very promising, with power conversion efficiency up to 15%. In these cells, the p-type Si layer is replaced by a semitransparent CNT film deposited at room temperature on the n-doped Si wafer, thus giving rise to an overall reduction of the total Si thickness and to the fabrication of a device with cheaper methods at low temperatures. In particular, the CNT film coating the Si wafer acts as a conductive electrode for charge carrier collection and establishes a built-in voltage for separating photocarriers. Moreover, due to the CNT film optical semitransparency, most of the incoming light is absorbed in Si; thus the efficiency of the CNT/Si device is in principle comparable to that of a conventional Si one. In this paper an overview of several factors at the basis of this device operation and of the suggested improvements to its architecture is given. In addition, still open physical/technological issues are also addressed.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.133-133
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• 2010

We studied the thermal and electric effect of 2D and 3D p-n photovoltaic diode structures with and without surface texturing. By analyzing the numerical simulation results of I-V characteristics and lattice temperature distributions, we systematically studied the effect of different texturing structures and different doping concentration on the characteristics of the silicon p-n photovoltaic devices. The, efficiency of the device with the surface texturing shows more than ~ 2% enhancement compared to the reference devices without texturing. The tendency of the efficiency of doping concentration has been studied with boron doping of $10^{14}{\sim}10^{17}cm^{-3}$ and phosphorus doping of $10^{15}cm^{-3}$. In addition to that, the study of changing phosphorus doping of $10^{15}{\sim}10^{18}cm^{-3}$ with boron doping of $10^{14}cm^{-3}$ has been examined. It has been shown that the texturing structure not only improves the light trapping but also plays an important role in the heat radiation.

• Bulletin of the Korean Chemical Society
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• v.34 no.6
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• pp.1845-1847
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• 2013

The lateral photovoltaic effect (LPE) can be observed in semiconductors by irradiating a light spot position between electrodes on sample's surface. Because lateral photovoltaic voltage (LPV) is sensitively changed by light spot position, a LPE device has been tried as a position-sensitive detector. This study discusses the correlation between LPV and conductivity in p-type silicon and nano-structured Au deposited p-type silicon (nano-Au silicon), respectively. Conductivity measurement of the sample was carried out using the four-wire method to eliminate contact resistance, and conductivity dependence on LPV was simultaneously measured by changing the light irradiation position. The result showed a strong correlation between conductivity and LPV in the p-type silicon sample. The correlation coefficient was 0.87. The correlation coefficient between LPV and conductivity for the nano-Au silicon sample was 0.41.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.25 no.10
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• pp.38-46
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• 2011

Recently, interests in renewable energy have gradually increased. Of various renewable energy, Photovoltaic system has the properties affected by weather. This paper discusses the economic evaluation based on insolation data analysis. Real insolation data were obtained by radiation measurement device installed in projected photovoltaic system site during 20 months. Obtained real insolation data were standardized using clear day analysis. Standardized data are greater than obtained real insolation data and were used as parameters of RETScreen for the economic evaluation. In results, capacity(30[kW]) of soon cheon is shown the most B/C(1.20). Applied methods have effectively done to develop photovoltaic system.

• Proceedings of the KIEE Conference
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• 2006.07b
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• pp.1034-1036
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• 2006

In this paper, I used microprocessor and sensor and designed to improve the efficiency of the photovoltaic system the photovoltaic position tracker device, and compared the normal photovoltaic system of fixed form with the photovoltaic system of solar position tracked form. Moreover, compared the catalogue of solar cell module and the simulation through a mathematics modelling with the solar cell's characteristic interpreting and, composed an power conversion system with boost converter and voltage source inverter. Used the constant voltage control method for maximum power point tracking in boost converter control and, used the SPWM(Sinusoidal Pulse Width Modulation) control method in inverter control.