• Title/Summary/Keyword: photovoltaic characteristics

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Secondary Phase and Defects in Cu2ZnSnSe4 Solar Cells with Decreasing Absorber Layer Thickness

  • Kim, Young-Ill;Son, Dae-Ho;Lee, Jaebaek;Sung, Shi-Joon;Kang, Jin-Kyu;Kim, Dae-Hwan;Yang, Kee-Jeong
    • Current Photovoltaic Research
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    • v.9 no.3
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    • pp.84-95
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    • 2021
  • The power conversion efficiency of Cu2ZnSnSe4 (CZTSe) solar cells depends on the absorber layer thickness; however, changes in the characteristics of the cells with varying absorber layer thickness are unclear. In this study, we investigated the changes in the characteristics of CZTSe solar cells for varying absorber layer thickness. Five absorber thicknesses were employed: CZTSe1 2.78 ㎛, CZTSe2 1.01 ㎛, CZTSe3 0.55 ㎛, CZTSe4 0.29 ㎛, and CZTSe5 0.15-0.23 ㎛. The efficiency of the CZTSe solar cells decreased as the absorber thickness decreased, resulting in power conversion efficiencies of 10.45% (CZTSe1), 8.67% (CZTSe2), 7.14% (CZTSe3), 3.44% (CZTSe4), and 1.54% (CZTSe5). As the thickness of the CZTSe absorber layer decreased, the electron-hole recombination at the grain boundaries and the absorber-back-contact interface increased. This caused an increase in the current loss, owing to light loss in the long-wavelength region. In addition, as the thickness of the CZTSe absorber layer decreased, more ZnSe was produced, and the resulting defects and defect clusters led to an open-circuit voltage loss.

Applying Least Mean Square Method to Improve Performance of PV MPPT Algorithm

  • Poudel, Prasis;Bae, Sang-Hyun;Jang, Bongseog
    • Journal of Integrative Natural Science
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    • v.15 no.3
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    • pp.99-110
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    • 2022
  • Solar photovoltaic (PV) system shows a non-linear current (I) -voltage (V) characteristics, which depends on the surrounding environment factors, such as irradiance, temperature, and the wind. Solar PV system, with current (I) - voltage (V) and power (P) - Voltage (V) characteristics, specifies a unique operating point at where the possible maximum power point (MPP) is delivered. At the MPP, the PV array operates at maximum power efficiency. In order to continuously harvest maximum power at any point of time from solar PV modules, a good MPPT algorithms need to be employed. Currently, due to its simplicity and easy implementation, Perturb and Observe (P&O) algorithms are the most commonly used MPPT control method in the PV systems but it has a drawback at suddenly varying environment situations, due to constant step size. In this paper, to overcome the difficulties of the fast changing environment and suddenly changing the power of PV array due to constant step size in the P&O algorithm, least mean Square (LMS) methods is proposed together with P&O MPPT algorithm which is superior to traditional P&O MPPT. PV output power is predicted using LMS method to improve the tracking speed and deduce the possibility of misjudgment of increasing and decreasing the PV output. Simulation results shows that the proposed MPPT technique can track the MPP accurately as well as its dynamic response is very fast in response to the change of environmental parameters in comparison with the conventional P&O MPPT algorithm, and improves system performance.

Characteristics of VOx Thin Film, NiOx Thin Film, and CuIx Thin Film for Carrier Selective Contacts Solar Cells (전하선택접촉 태양전지 적용을 위한 VOx 박막, NiOx 박막, CuIx 박막의 특성 연구)

  • Kiseok Jeon;Minseob Kim;Eunbi Lee;Jinho Shin;Sangwoo Lim;Chaehwan Jeong
    • Current Photovoltaic Research
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    • v.11 no.2
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    • pp.39-43
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    • 2023
  • Carrier-selective contacts (CSCs) solar cells are considerably attractive on highly efficient crystalline silicon heterojunction (SHJ) solar cells due to their advantages of high thermal tolerance and the simple fabrication process. CSCs solar cells require a hole selective contact (HSC) layer that selectively collects only holes. In order to selectively collect holes, it must have a work function characteristic of 5.0 eV or more when contacted with n-type Si. The VOx, NiOx, and CuIx thin films were fabricated and analyzed respectively to confirm their potential usage as a hole-selective contact (HSC) layer. All thin films showed characteristics of band-gap engergy > 3.0 eV, work function > 5.0 eV and minority carrier lifetime > 1.5 ms.

The Arch Type PV System Performance Evaluation of Multi Controlled Inverter for Improve the Efficiency (효율개선을 위한 다중제어 인버터방식의 아치형 PV System 성능 분석)

  • Lee, Mi-Yong;Park, Jeong-Min
    • Journal of the Korea Academia-Industrial cooperation Society
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    • v.13 no.11
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    • pp.5452-5457
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    • 2012
  • It is saving material cost and construction cost by replacing conventional building materials, and It has advantages for aesthetic value. In the Europe, the United States, Japan and other country research about BIPV is actively being carried out and marketability is also being infinity expanding. Arch type PV systems efficiency characteristics is different depending on PV array's directly connection, parallel connection and arches angle, but is a lack of analysis on this nowadays. When the arch type PV system design up, they consider about aesthetic value and they didn't consider about generation efficiency. In this paper, we try to improve the efficiency through optimization of arch type PV system and estimation of the efficiency parameters of the arch type PV system, such as latitude, longitude, temperature, insolation, arch angle and each kind loss from system organization. For improving Arched PV system efficiency, proposed multiple control inverter system, and using simulation tool of Arched PV system "Solar pro", flat-plate type and many arch type PV system configuration the driving characteristics were compared and analyzed.

Automatic Detection of Malfunctioning Photovoltaic Modules Using Unmanned Aerial Vehicle Thermal Infrared Images

  • Kim, Dusik;Youn, Junhee;Kim, Changyoon
    • Journal of the Korean Society of Surveying, Geodesy, Photogrammetry and Cartography
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    • v.34 no.6
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    • pp.619-627
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    • 2016
  • Cells of a PV (photovoltaic) module can suffer defects due to various causes resulting in a loss of power output. As a malfunctioning cell has a higher temperature than adjacent normal cells, it can be easily detected with a thermal infrared sensor. A conventional method of PV cell inspection is to use a hand-held infrared sensor for visual inspection. The main disadvantages of this method, when applied to a large-scale PV power plant, are that it is time-consuming and costly. This paper presents an algorithm for automatically detecting defective PV panels using images captured with a thermal imaging camera from an UAV (unmanned aerial vehicle). The proposed algorithm uses statistical analysis of thermal intensity (surface temperature) characteristics of each PV module to verify the mean intensity and standard deviation of each panel as parameters for fault diagnosis. One of the characteristics of thermal infrared imaging is that the larger the distance between sensor and target, the lower the measured temperature of the object. Consequently, a global detection rule using the mean intensity of all panels in the fault detection algorithm is not applicable. Therefore, a local detection rule was applied to automatically detect defective panels using the mean intensity and standard deviation range of each panel by array. The performance of the proposed algorithm was tested on three sample images; this verified a detection accuracy of defective panels of 97% or higher. In addition, as the proposed algorithm can adjust the range of threshold values for judging malfunction at the array level, the local detection rule is considered better suited for highly sensitive fault detection compared to a global detection rule. In this study, we used a panel area extraction method that we previously developed; fault detection accuracy would be improved if panel area extraction from images was more precise. Furthermore, the proposed algorithm contributes to the development of a maintenance and repair system for large-scale PV power plants, in combination with a geo-referencing algorithm for accurate determination of panel locations using sensor-based orientation parameters and photogrammetry from ground control points.

Excimer-Based White Phosphorescent OLEDs with High Efficiency

  • Yang, Xiaohui;Wang, Zixing;Madakuni, Sijesh;Li, Jian;Jabbour, Ghassan E.
    • 한국정보디스플레이학회:학술대회논문집
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    • 2008.10a
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    • pp.1520-1521
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    • 2008
  • There are several ways to demonstrate white organic light emitting diodes (OLEDs) for displays and solid state lighting applications. Among these approaches are the stacked three primary or two complementary colors light-emitting layers, multiple-doped emissive layer, and excimer and exciplex emission [1-10]. We report on white phosphorescent excimer devices by using two light emitting materials based on platinum complexes. These devices showed a peak EQE of 15.7%, with an EQE of 14.5% (17 lm/W) at $500\;cd/m^2$, and a noticeable improvement in both the CIE coordinates (0.381, 0.401) and CRI (81). Devices with the structure ITO/PEDOT:PSS/TCTA (30 nm)/26 mCPy: 12% FPt (10 nm) /26 mCPy: 2% Pt-4 (15 nm)/BCP (40 nm)/CsF/Al [device 1], ITO/PEDOT:PSS/TCTA (30 nm)/26 mCPy: 2% Pt-4 (15 nm)/26 mCPy: 12% FPt (10 nm)/BCP (40 nm)/CsF/Al [device 2], and ITO/PEDOT:PSS/TCTA (30 nm)/26 mCPy: 2% Pt-4: 12% FPt (25 nm)/BCP (40 nm)/CsF/Al [device 3] were fabricated. In these cases, the emissive layer was either the double-layer of 26 mCPy:12% FPt and 15 nm 26 mCPy: 2% Pt-4, or the single layer of 26mCPy with simultaneous doping of Pt-4 and FPt. Device characterization indicates that the CIE coordinates/CRI of device 2 were (0.341, 0.394)/75, (0.295, 0.365)/70 at 5 V and 7 V, respectively. Significant change in EL spectra with the drive voltage was observed for device 2 indicating a shift in the carrier recombination zone, while relatively stable EL spectra was observed for device 1. This indicates a better charge trapping in Pt-4 doped layers [10]. On the other hand, device 3 having a single light-emitting layer (doped simultaneously) emitted a board spectrum combining emission from the Pt-4 monomer and FPt excimer. Moreover, excellent color stability independent of the drive voltage was observed in this case. The CIE coordinates/CRI at 4 V ($40\;cd/m^2$) and 7 V ($7100\;cd/m^2$) were (0.441, 0.421)/83 and (0.440, 0.427)/81, respectively. A balance in the EL spectra can be further obtained by lowering the doping ratio of FPt. In this regard, devices with FPt concentration of 8% (denoted as device 4) were fabricated and characterized. A shift in the CIE coordinates of device 4 from (0.441, 0.421) to (0.382, 0.401) was observed due to an increase in the emission intensity ratio of Pt-4 monomer to FPt excimer. It is worth noting that the CRI values remained above 80 for such device structure. Moreover, a noticeable stability in the EL spectra with respect to changing bias voltage was measured indicating a uniform region for exciton formation. A summary of device characteristics for all cases discussed above is shown in table 1. The forward light output in each case is approximately $500\;cd/m^2$. Other parameters listed are driving voltage (Bias), current density (J), external quantum efficiency (EQE), power efficiency (P.E.), luminous efficiency (cd/A), and CIE coordinates. To conclude, a highly efficient white phosphorescent excimer-based OLEDs made with two light-emitting platinum complexes and having a simple structure showed improved EL characteristics and color properties. The EQE of these devices at $500\;cd/m^2$ is 14.5% with a corresponding power efficiency of 17 lm/W, CIE coordinates of (0.382, 0.401), and CRI of 81.

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Environmentally Available Potential of Renewable Energy in Korea: Onshore Wind and Photovoltaic (육상풍력 및 육상태양광의 환경적 가용입지 분석)

  • Lee, Young-Joon;Park, Jong-Yoon
    • Journal of Environmental Impact Assessment
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    • v.30 no.6
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    • pp.339-354
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    • 2021
  • The purpose of this study is to provide valuable information and data by analyzing the environmental status and potential forrenewable energy projects (or plans) based on environmental assessment (EA) data, so that more objective and scientific environmental assessments can be conducted. The study also suggests regional directions that could satisfy the goals of nature conservation and renewable energy. Based on the analysis of EA data that was conducted up until June 2019, the study analyzed the size, location and characteristics of both onshore wind power and onshore photovoltaic. The environmentally available potential by region was also derived by considering the main constraints and requirements related to the potential siting ofrenewable energy projects at the EA. Based on EA data, 63 out of 80 (79%) onshore wind power projects are shown to be located in mountainous areas. For onshore photovoltaic projects, a total of 7,363 projects were subjected to environmental assessment over the country. The environmentally potential area for onshore wind power, considering all the environmental regulatory factors, is 2,440 km2. For onshore photovoltaic, the environmentally available area estimated as idle farmland is 2,877 km2. The distribution and characteristics of the environmentally available potential of the region may be the most important factor that local governments should bear in mind in terms of promoting renewable energy development projects in the region. Based on the results of this study, even if we consider the national energy plan including the expected future increase, as well as environmental goals and socio-economic acceptance through an environmental assessment, the available resources forrenewable energy projects are not insufficient. It is possible to examine the adequacy of the target distribution rate of renewable energy sources by region taking into consideration the quantitative and scientific results such as the environmentally available potential data derived from this study.

Thermal Characteristics according to Trench Etch angle of Super Junction MOSFET (Super Junction MOSFET의 트렌치 식각 각도에 따른 열 특성 분석에 관한 연구)

  • Kang, Ey Goo
    • Journal of IKEEE
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    • v.18 no.4
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    • pp.532-535
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    • 2014
  • This paper analyzed thermal characteristics of super junction MOSFET using process and design parameters. Trench process is very important to super junction MOSFET process. We analyzed the difference of temperature, thermal resistance, total power consumption according to trench etch angle. As a result we obtained minimum value of temperature difference and thermal resistance at $89.3^{\circ}$ of trench etch angle. The electrical characteristics distribution of super junction MOSFET is not showed tendency according to trench etch angle. We need iterative experiments and simulation for optimal value of electrical characteristics. The super junction power MOSFET that has superior thermal characteristics will use automobile and industry.

A Study on the Design and Electrical Characteristics Enhancement of the Floating Island IGBT with Low On-Resistance

  • Jung, Eun-Sik;Cho, Yu-Seup;Kang, Ey-Goo;Kim, Yong-Tae;Sung, Man-Young
    • Journal of Electrical Engineering and Technology
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    • v.7 no.4
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    • pp.601-605
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    • 2012
  • Insulated Gate Bipolar Transistors(IGBTs) have received wide attention because of their high current conduction and good switching characteristics. To reduce the power loss of IGBT, the onstate voltage drop should be lowered and the switching time should be shortened. However, there is trade-off between the breakdown voltage and the on-state voltage drop. The FLoatingIsland(FLI) structure can lower the on-state voltage drop without reducing breakdown voltage. In this paper, The FLI IGBT shows an on-state voltage drop that is 22.5% lower than the conventional IGBT, even though the breakdown voltages of each IGBT are almost identical.

Numerical Simulation of Phase Separation in Bulk Hetero-junction Photoactive Layer

  • Hang, Nguyen Thi;Van Thuong, Dinh;Nhat, Hoang Nam;Van Chau, Dinh
    • International Journal of Advanced Culture Technology
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    • v.4 no.1
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    • pp.31-36
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    • 2016
  • Morphology evolution of the active layer in bulk hetero-junction organic photovoltaic is modeled and visualized. The width of the phase domain can be predicted using the relationship of characteristics length and evolution time of the process. The 3D numerical simulation of the PCBM/P3HT blend morphology evolution with respect to time is presented. It is observed that the domain width of composition phase can be predicted by using the relationship between value of characteristic length R(t) and evolution time t.