• 대한전자공학회:학술대회논문집
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• 대한전자공학회 1999년도 추계종합학술대회 논문집
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• pp.309-312
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• 1999

Fiber Bragg gratings have many applications such as fiber sensors, band-stop filters, add-drop filters, and mode convertors. In this paper, we present the fabrication method of various fiber Bragg gratings by using continuous wave UV-Argon(frequency-doubled Argon) laser. In our experiments, hydrogenation of fibers was used to enhance photosensitivity of fiber. And we fabricated fiber gratings by the phase mask method.

• 소성∙가공
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• 제13권3호
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• pp.205-210
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• 2004

The waveguide Bragg gratings have been fabricated by the phase-mask method. An excimer laser with maximum 600mJ output pulse energy and uniform phase masks have been used. Hydrogen loading is often used for enhancing the uv photosensitivity of the core, however, the resultant gratings show significant aging effect. In the present study, high temperature thermal annealing process has been investigated to obtain thermal gratings and process parameters are deduced.

• 센서학회지
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• 제23권5호
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• pp.332-336
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• 2014

In this paper, we propose a complementary metal oxide semiconductor (CMOS) binary image sensor with a gate/body-tied (GBT) PMOSFET-type photodetector for high-speed operation. The GBT photodetector of an active pixel sensor (APS) consists of a floating gate ($n^+$-polysilicon) tied to the body (n-well) of the PMOSFET. The p-n junction photodiode that is used in a conventional APS has a good dynamic range but low photosensitivity. On the other hand, a high-gain GBT photodetector has a high level of photosensitivity but a narrow dynamic range. In addition, the pixel size of the GBT photodetector APS is less than that of the conventional photodiode APS because of its use of a PMOSFET-type photodetector, enabling increased image resolution. A CMOS binary image sensor can be designed with simple circuits, as a complex analog to digital converter (ADC) is not required for binary processing. Because of this feature, the binary image sensor has low power consumption and high speed, with the ability to switch back and forth between a binary mode and an analog mode. The proposed CMOS binary image sensor was simulated and designed using a standard CMOS $0.18{\mu}m$ process.

• 폴리머
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• 제31권5호
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• pp.374-378
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• 2007

Acrylamide(AM), diacetone acrylamide(DAAM) 및 acrylic acid(AAc)를 사용하여 수용성 삼원공중합체를 제조하고, 4-azidoaniline을 반응하여 azido기를 고분자 곁사슬에 도입한 일성분계 포토레지스트를 제조하였다. AM을 주성분으로 하고 DAAM을 공단량체로 사용한 공중합체를 합성하구 광가교제로 4,4'-diazidostilbene 2,2'-disulfuric acid sodium salt(DAS)를 혼합한 이성분계 포토레지스트를 제조하여 두 종류 포토레지스트의 감광특성을 비교하였다. 포토레지스트의 azido기 1 mol에 대한 감광특성은 고분자 곁사슬에 azido기를 가진 일성분계의 경우가 bis-azido기를 가진 이성분계보다 약 4배정도 우수한 감광성을 나타내었다. 직경 $110{\mu}m$ 크기의 원형패턴을 낮은 광세기에서 일성분계 포토레지스트를 사용하여 얻었으며, 노광부와 비노광부 계면에 잔존물이 없이 원형 패턴이 형성되어 블랙 매트릭스용 negative 포토레지스트로 활용이 기대된다.

• 대한화학회지
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• 제46권5호
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• pp.437-471
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• 2002

포토레지스트의 감도 증진은 광산 발생제로부터 발생되는 산에 의해 자동촉매분해가 일어나는 산 증식제를 화학 증폭형 포트레지스트에 첨가함으로써 얻을 수 있다. 본 연구에서는 이소프로필리덴 디시클로헥산올의 p스티렌술폰산 유도체를 산 증식제로 합성되고 그 성능을 평가하였다. 이러한 산 증식제로 합성한 4-hydroxy-4`-p-styrensulfonyloxy isopropylidene dicyclohexane(1), 4,4`-di-styrenesulfonyloxy isopropylidene dicyclohexane(2) 그리고 4-p-styrene-sulfonyloxy-4`-tosyloxy isopropylidene dicyclohexane(3)는 레지스트 공정온도에 대하여 충분한 열적 안정성을 나타내었다. 또한 이러한 산 증식제를 사용한 경우에 광산 발생제만 사용한 poly(tert-butyl methacrylate)film에 비교하여 2배에서 12배 정도의 감도 증진이 일어나 광화상 제조에 실용적으로 응용 할 수 있음을 확인하였다.

• 한국작물학회지
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• 제51권1호
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• pp.41-47
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• 2006

To understand the heading habit of recently developed 20 Korean rice cultivars, rice plants in a phytotron were exposed to different temperature: $22.5^{\circ}C(day\;27^{\circ}C/night\;18^{\circ}C),\;27.5^{\circ}C(day\;32^{\circ}C/night\;23^{\circ}C)$, and day-length conditions: 10, 12, 13, 14, 15 hours. Four rice cultivars (Sobibyeo, Juanbyeo, Ilpumbyeo and Shindongjinbyeo) showed relatively short Basic Vegetative Phase (BVP) of 17 to 18 days, while Dasanbyeo showed the longest (35 days) BVP, compared to other remaining 15 tested cultivars which exhibited 24 to 31 days of BVP. In this experiment, it was tried out to separate the eliminable vegetative phase into photosensitivity and thermo-sensitivity with two different pathways. Many tested cultivars, however, exhibited quite different responses under low temperature and / or long day-length conditions. Especially, Surabyeo and Juanbyeo were the most difficult cultivars to separate into photo- or thermo-sensitivity in that the eliminable vegetative phase of these two cultivars increased greatly only under low temperature $(22.5^{\circ}C)$ and long day-length (15 hr.) conditions. Regarding the heading response to temperatures, tested cultivars could be categorized into 2 groups. In 1st group of rice cultivars, the eliminable vegetative phase decreased almost equally as the temperature changed from $20.0^{\circ}C\rightarrow22.5^{\circ}C\rightarrow25.0^{\circ}C\rightarrow27.5^{\circ}C$. In contrast, the 2nd group of rice cultivars exhibited eliminable vegetative phase slowly decreasing when the temperature changed from $22.5^{\circ}C\rightarrow25.0^{\circ}C\rightarrow27.5^{\circ}C$, but rapidly decreasing when the mean temperature changed from $20.0^{\circ}C\;to\;22.5^{\circ}C$. All the cultivars belonged to 2nd group, the heading date would be very delayed if cool summer comes.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2001년도 추계학술대회 논문집 전기물성,응용부문
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• pp.178-181
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• 2001

The electro-optical (EO) characteristics for the twisted-nematic (TN)-liquid crystal display (LCD) photo-aligned with polarized UV exposure on various blending photopolymer surfaces were investigated. Excellent LC alignment and voltage-transmittance (V-T) characteristics for TN-LCD photo-aligned with polarized UV exposure of normal incidence on the blending Photopolymer (polyimide (PI) + PM4Ch (poly(4-methacryloyloxy chalcone))) surface containing chalcone group can be achieved. The EO performances of the TN-LCD photo-aligned on the blending photopolymer can be improved due to the photosensitivity by long side chain of the photopolymer.

• Bulletin of the Korean Chemical Society
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• 제24권4호
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• pp.441-445
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• 2003

We synthesized three copolymers bearing photochromic spiropyran dye and chalcone moiety in the side chain for studying the dynamic properties of their photochromism. They contain methacrylate-spiropyran (MAspiropyran) and methacrylate-chalcone (MA-chalcone) with the different concentration. The photosensitivity of the newly synthesized copolymers was investigated by using UV-Vis absorption spectroscopy. We observed photodimerization and photochromic behavior under UV irradiation at the same time. The effect of photocrosslink on the rate and stability of photochromism in three copolymers was considered in this study. This study might be helpful to design photochromic materials for irreversible optical memory by virtue of photocrosslinking reaction.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 춘계학술대회 논문집 센서 박막재료 반도체재료 기술교육
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• pp.39-42
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• 2002

There is a renewed interest in the application of photoconductors especially Cd(Zn)Te to x-ray imaging. In this paper, We investigate effects on x-ray detection characteristic of Zn dopped CdTe detector. Cd(Zn)Te film was fabricated by vacuum thermal evaporation method and then investigate physical analysis using EPMA and XRD. We investigated the leakage current and X-ray photosensitivity as applied voltage about fabricated Cd(Zn)Te film. Experimental results showed that the increase of Zn dopped concentration in $Cd_{1-x}Zn_{x}Te$ detector reduced a leakage current and improved a signal to noise ratio significantly.

• 한국광학회:학술대회논문집
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• 한국광학회 2002년도 하계학술발표회
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• pp.40-41
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• 2002

광 집적회로의 필요성에 의해 평면형 광소자의 개발이 다각도로 연구되고 있다. 그 중 유리의 광민감성을 이용한 것으로 직접 UV를 조사하여 광도파로를 만드는 방법이 최근 관심을 얻고 있다. 이러한 direct UV-writing 방법을 이용한 경우는 광도과로를 위한 식각 과정을 거치지 않고도 광도파로를 제작할 수 있는 장점이 있다. UV-writing을 이용한 광도파로 형성을 위해서는 undercladding층, core층, overcladding층으로 이루어진 구조의 박막을 제조해야 하며, 특히 빛이 도파되는 core 부분은 UV 조사에 따라 굴절률이 증가하는 광민감성이 높은 물질로 구성되어야 한다. UV조사에 따라 굴절률이 증가하는 광민감성이 높은 물질로 구성되어야 한다. (중략)