• 한국섬유공학회:학술대회논문집
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• 한국섬유공학회 1987년도 학술발표초록집
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• pp.39-39
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• 1987

• 공업화학
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• 제21권4호
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• pp.411-416
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• 2010

본 연구에서는 알칼리 현상형 감광성 수지재료와 전도성 카본블랙을 이용하여 만들어진 감광성 폴리머 저항 페이스트를 이용하여 후막저항체의 허용편차(tolerance)를 개선하고자 하였다. 먼저 카본블랙과 감광성 수지의 선택이 폴리머 후막저항(polymer thick film resistor, PTFR)의 저항값의 범위와 허용편차의 수준에 미치는 영향을 조사하였다. 이후 테스트 기판상에 감광성 저항 페이스트를 도포하는 방법에 따른 저항값 허용편차의 차이를 평가하였다. 감광성 저항 페이스트를 스크린 인쇄를 이용하여 테스트 기판의 전면에 도포한 경우에는 테스트 기판상에서 균일한 두께의 후막을 형성하기 어렵기 때문에 위치에 따른 저항값의 허용편차가 크게 나타났다. 반면, 롤러를 이용하여 페이스트를 도포하였을 때, 전체 기판 면적에 균일한 두께의 저항체 후막을 형성할 수 있었으며, 저항값 평가 결과 ${\pm}10%$ 이내의 낮은 허용편차를 나타내었다. 포토공정을 이용한 정밀한 패터닝 공정과 롤러를 이용한 균일한 두께의 저항막 도포 공정을 결합함으로써 후막저항의 허용편차를 개선할 수 있었다.

• 한국포장학회지
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• 제10권1호
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• pp.55-62
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• 2004

Synthesis of poly[N-(formyloxyphenyl)maleimide](PFOMI) as photopolymer were investigated with various kinds of photosensitive groups. Generally, photopolyimide have some deficiencies in solubility, sensitivity, reserve stability of the photosensitive solution, and the precision of image pattern. The study has been required on those polymers which have high glass transition temperature and photo efficiency, and low dielectricity. The existing condensation resins require high curing temperature and perfect elimination of subreacted materials that are produced during the process after irradiation and various membrane damages such as the deformation and contraction in image pattern cure. In this study poly[N-(hydroxyphenyl)maleimide](PHPMI) was synthesized. The PHPMI were analyzed by H-NMR and FT-IR. The measured number average molecular weight of PHPMI was produced was $1.06{\times}10^4$. Poly[N-(formyloxyphenyl)maleimide](PFOMI) as a type of photo-Fries rearrangement was synthesized by NHPMI and formic acid followed by radical polymerization. PFOMI was analyzed by FT-IR, and photocharacteristics was investgated by UV spectra and FT-IR before and after UV irradiation. Based on the image characteristics of PFOMI measured from optical micrographs, it was formed that the resolution of positive type PFOMI was $0.5{\mu}m$.

• 한국응용과학기술학회지
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• 제13권3호
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• pp.145-153
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• 1996

Naphthoquinone-1,2-diazide-5-sulfonyl[NDAS] derivatives members of quinone diazide compound that are utilizable as photosensitive polymer material were synthesized, and photoresist were prepared by mixing these derivatives with m-cresol novolak(a matrix resin) at various weight ratios. Photosensitive characteristics of photoresist were studied by examining UV and IR, relative sensitivity using a Gray scale method, and SEM to analyze if they can be used as photosensitive material in printing process. Experimental results showed that, by UV, NDAS derivatives were photoconverted and developer-soluble photoresist were produced. The mixing ratio of 1:4(by mass) of NDAS+p-ydroxybenzophenone+sensitizer and m-cresol novolak gave rise to the highest dissolution rate. In addition, photoresist obtained at this condition resulted in the most superior sensitivity and contrast.

• 한국인쇄학회지
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• 제13권2호
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• pp.47-53
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• 1995

Photosensitive resin of azide type is good for resolution and inner solvent, but it is really problem to development of practical use because fanctional groups of polymer has many hydrophilic radicals. By careful attention to this point, this study was investigated synthesis term, photo property and development property of composed photosensitive resin of azida type, it is to this effect. 1) H-NMR spectrum of compared DABCI showed amion redical by $\delta$6.0~6.1ppm to substitude for azide radical by amino radical by $\delta$8.9~9.45ppm, and FT-IR absorption spectra showed the absorption bends at 2100cm. 2)FT-IR absorption spectra of PHS1-DAB, PHS2-DAB, CMM-DAB and CHM-DAB showed azida radical pick to be lost at after irradiation by UV light. 3) According to exposuer change of PHS1-DAB, PHS2-DAB, CMM-DAB and CHM-DAB, absorption maximum value of UV spectrum change was 280nm. 4) to compared relative sensitivity of compared photosensitive resin, PHS2-DAB was the best and to compared insolubility rate of compared photosensitive resin, CMM-DAB was the lower. 5)Solubility if NaOH was the best by 1.0mol/$\ell$ and solubility of developing solution of ethanol to water was it in the ratio of 4 to 1.

• 한국재료학회지
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• 제8권9호
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• pp.871-875
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• 1998

사진식각 공정으로 종횡비가 매우 큰 유리 미세구조물을 제작하였다. 미세구조물의 제작에는 압축응력에 강하고 전기적 절연체인 감광성 유리를 사용하였다. 감광성 유리는 석영기판 위에 크롬이 패턴된 마스크를 사용하여 파장이 312nm인 자외선에 노광되었다. $500^{\circ}C$ 이상의 열처리공정을 거친 후 초음파 분위기에서 10%의 불산용액으로 식각함으로써 유리 미세구조물을 제작하였다. 미세구조물의 최종 형상은 감광성 유리의 두께, 마스크 패턴, 자외선 노광조건 및 식각조건에 크게 의존하였으며, 종횡비가 30이상인 스트라이프 구조의 유리 미세구조물을 제작할 수 있었다.

• 한국전기전자재료학회논문지
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• 제14권5호
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• pp.351-355
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• 2001

Via for achieving reliable fabrication of MCM(Multichip Module) substrate was formed on photosensitive BCB layer. The MCM substrate consists of photosensitive BCB(Benzocyclobutene) interlayer dielectric and copper conductors. In order to form the vias in the photosensitive BCB layer, the process of forming the BCB layer and its via forming plasma etch using C$_2$F$\_$6//O$_2$ gas were evaluated. The thickness of the BCB layer after hard bake was shrunk down to 40% of the original. The resolution of vias formed on the BCB was 15㎛ and the slope after develop was 85 degree. AES analysis was done on two vias, one is etched in C$_2$F$\_$6/O$_2$ gas and the other isnot etched. On the via etched in C$_2$F$\_$6//O$_2$, native C was detected and the amount of native C was reduced after Ar sputter. On the via not etched in C$_2$F$\_$6//O$_2$, organic C was detected. As a result of AES, BCB residue was not removed by Ar sputter, so plasma etch is necessary for achieving reliable vias.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 하계학술대회 논문집
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• pp.99-102
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• 2000

Via for achieving reliable fabrication of MCM-D substrate was formed on the photosensitive BCB layer. MCM-D substrate consists of photosensitive BCB(Benzocyclobutene) interlayer dielectric and copper conductors. In order to form the vias in photosensitive BCB layer, the process of BCB and plasme etch using $C_2$F$_{6}$ gas were evaluated. The thickness of BCB after soft bake was shrunk down to 60% of the original. AES analysis was done on two vias, one is etched in $C_2$F$_{6}$ gas and the other is non etched. On via etched in $C_2$F$_{6}$, native C was detected and the amount of native C was reduced after Ar sputter. On via non etched in $C_2$F$_{6}$, organic C was detected and amount of organic C was reduced a little after Ar sputter. As a result of AES, BCB residue was not removed by Ar sputter, so plasma etch is necessary for achieving reliable via.ble via.

• 한국산학기술학회논문지
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• 제16권2호
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• pp.1364-1369
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• 2015

반도체 칩의 고집적화로 과거 와이어 본딩 공정에서 BUMP 공정으로 전환되면서 반도체칩과 외부 기기로 이어지는 통신선도 더욱 미세해짐으로 인해 보다 정밀한 작업이 필요한 실정이지만 PSPI의 고점도 특성상 정량제어가 어렵고 버블유입에 따른 수율의 저하가 계속되고 있는 실정이다. 따라서 본 논문에서는 반도체 BUMP 공정에서 고점도 감광성 폴리이미드(PSPI : Photosensitive Polyimide)의 도포(coating)시 발생하는 기포(gas)를 제거하여 공급하는 D&P(Degassing and Pumping) 시스템을 개발하였다.

• 한국세라믹학회지
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• 제39권8호
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• pp.750-757
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• 2002

Photosensitive sol solution을 이용한 self pattern된 박막은 photoresist/dry etching process에 비해 박막의 제조과정이 간단하다는 장점을 가지고 있다. 이 연구에서는 photosensitive sol solution을 이용하여 spin coating법에 의해 $Sr_{0.9}Bi_{2.1}Ta_2O_9$의 조성을 갖는 강유전체 박막을 제조하였으며 출발원료는 $Sr(OC_2H_5)_2,\;Bi(TMHD)_3$와 $Ta(OC_2H_5)_5$를 사용하였다. SBT 박막에 UV 노광시간을 증가시킴에 따라 M-O-M 결합이 생성되면서 metal ${\beta}$-diketonate의 UV 흡수 피크 강도는 감소되었고 SBT 박막에 UV 조사에 따른 용해도 차이가 생기면서 fine patterning을 얻을 수 있었다. 또한 UV가 조사된 SBT 박막의 강유전 특성이 UV가 조사되지 않은 것보다 우수하였다.