• Proceedings of the Korean Fiber Society Conference
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• 1987.06b
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• pp.39-39
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• 1987

• Applied Chemistry for Engineering
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• v.21 no.4
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• pp.411-416
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• 2010

In this research, we intended to improve the tolerance of thick film resistor using photosensitive polymer resistor paste which was fabricated with alkali-solution developable photosensitive resin and conductive carbon black. At first, we investigated the effect of the selection of carbon black and photosensitive resin on the resistance range and tolerance level of polymer thick film resistor (PTFR). And then, a difference in resistance tolerance was evaluated according to the coating methods of photosensitive resistor paste on test board. In case that the photosensitive resistor paste was coated on whole surface of test board using screen printing, large positional tolerance was obtained because the formation of the thick film with uniform thickness was difficult. On the other hand, when the paste was coated with roller, the resistive thick film with uniform thickness was formed on the whole board area and the result of resistance evaluation showed low tolerance in ${\pm}10%$ range. The tolerance of PTFR could be improved by combination of the precise patterning using photo-process and the coating process for the resistive thick film with uniform thickness.

• KOREAN JOURNAL OF PACKAGING SCIENCE & TECHNOLOGY
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• v.10 no.1
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• pp.55-62
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• 2004

Synthesis of poly[N-(formyloxyphenyl)maleimide](PFOMI) as photopolymer were investigated with various kinds of photosensitive groups. Generally, photopolyimide have some deficiencies in solubility, sensitivity, reserve stability of the photosensitive solution, and the precision of image pattern. The study has been required on those polymers which have high glass transition temperature and photo efficiency, and low dielectricity. The existing condensation resins require high curing temperature and perfect elimination of subreacted materials that are produced during the process after irradiation and various membrane damages such as the deformation and contraction in image pattern cure. In this study poly[N-(hydroxyphenyl)maleimide](PHPMI) was synthesized. The PHPMI were analyzed by H-NMR and FT-IR. The measured number average molecular weight of PHPMI was produced was $1.06{\times}10^4$. Poly[N-(formyloxyphenyl)maleimide](PFOMI) as a type of photo-Fries rearrangement was synthesized by NHPMI and formic acid followed by radical polymerization. PFOMI was analyzed by FT-IR, and photocharacteristics was investgated by UV spectra and FT-IR before and after UV irradiation. Based on the image characteristics of PFOMI measured from optical micrographs, it was formed that the resolution of positive type PFOMI was $0.5{\mu}m$.

• Journal of the Korean Applied Science and Technology
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• v.13 no.3
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• pp.145-153
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• 1996

Naphthoquinone-1,2-diazide-5-sulfonyl[NDAS] derivatives members of quinone diazide compound that are utilizable as photosensitive polymer material were synthesized, and photoresist were prepared by mixing these derivatives with m-cresol novolak(a matrix resin) at various weight ratios. Photosensitive characteristics of photoresist were studied by examining UV and IR, relative sensitivity using a Gray scale method, and SEM to analyze if they can be used as photosensitive material in printing process. Experimental results showed that, by UV, NDAS derivatives were photoconverted and developer-soluble photoresist were produced. The mixing ratio of 1:4(by mass) of NDAS+p-ydroxybenzophenone+sensitizer and m-cresol novolak gave rise to the highest dissolution rate. In addition, photoresist obtained at this condition resulted in the most superior sensitivity and contrast.

• Journal of the Korean Graphic Arts Communication Society
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• v.13 no.2
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• pp.47-53
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• 1995

Photosensitive resin of azide type is good for resolution and inner solvent, but it is really problem to development of practical use because fanctional groups of polymer has many hydrophilic radicals. By careful attention to this point, this study was investigated synthesis term, photo property and development property of composed photosensitive resin of azida type, it is to this effect. 1) H-NMR spectrum of compared DABCI showed amion redical by $\delta$6.0~6.1ppm to substitude for azide radical by amino radical by $\delta$8.9~9.45ppm, and FT-IR absorption spectra showed the absorption bends at 2100cm. 2)FT-IR absorption spectra of PHS1-DAB, PHS2-DAB, CMM-DAB and CHM-DAB showed azida radical pick to be lost at after irradiation by UV light. 3) According to exposuer change of PHS1-DAB, PHS2-DAB, CMM-DAB and CHM-DAB, absorption maximum value of UV spectrum change was 280nm. 4) to compared relative sensitivity of compared photosensitive resin, PHS2-DAB was the best and to compared insolubility rate of compared photosensitive resin, CMM-DAB was the lower. 5)Solubility if NaOH was the best by 1.0mol/$\ell$ and solubility of developing solution of ethanol to water was it in the ratio of 4 to 1.

• Korean Journal of Materials Research
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• v.8 no.9
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• pp.871-875
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• 1998

High aspect ratio microstructures were fabricated by photolithography. The material for the microstructure was photosensitive glass which has good mechanical and electrical insulation properties. The photosensitive glass was exposed to ultraviolet light at 312nm through a chromium mask in which the structures are drawn. After heat treatment process over $500^{\circ}C$, the photosensitive glass was etched in a 10% hydrofluoric acid solution with ultrasonic conditions. Final dimension of the micro-framework was greatly dependent on the thickness of photosensitive glass, mask pattern, ultraviolet light exposure and etching conditions. The maximum aspect ratio of the micro-framework obtained from this work was over 30.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.14 no.5
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• pp.351-355
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• 2001

Via for achieving reliable fabrication of MCM(Multichip Module) substrate was formed on photosensitive BCB layer. The MCM substrate consists of photosensitive BCB(Benzocyclobutene) interlayer dielectric and copper conductors. In order to form the vias in the photosensitive BCB layer, the process of forming the BCB layer and its via forming plasma etch using C$_2$F$\_$6//O$_2$ gas were evaluated. The thickness of the BCB layer after hard bake was shrunk down to 40% of the original. The resolution of vias formed on the BCB was 15㎛ and the slope after develop was 85 degree. AES analysis was done on two vias, one is etched in C$_2$F$\_$6/O$_2$ gas and the other isnot etched. On the via etched in C$_2$F$\_$6//O$_2$, native C was detected and the amount of native C was reduced after Ar sputter. On the via not etched in C$_2$F$\_$6//O$_2$, organic C was detected. As a result of AES, BCB residue was not removed by Ar sputter, so plasma etch is necessary for achieving reliable vias.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.07a
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• pp.99-102
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• 2000

Via for achieving reliable fabrication of MCM-D substrate was formed on the photosensitive BCB layer. MCM-D substrate consists of photosensitive BCB(Benzocyclobutene) interlayer dielectric and copper conductors. In order to form the vias in photosensitive BCB layer, the process of BCB and plasme etch using $C_2$F$_{6}$ gas were evaluated. The thickness of BCB after soft bake was shrunk down to 60% of the original. AES analysis was done on two vias, one is etched in $C_2$F$_{6}$ gas and the other is non etched. On via etched in $C_2$F$_{6}$, native C was detected and the amount of native C was reduced after Ar sputter. On via non etched in $C_2$F$_{6}$, organic C was detected and amount of organic C was reduced a little after Ar sputter. As a result of AES, BCB residue was not removed by Ar sputter, so plasma etch is necessary for achieving reliable via.ble via.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.16 no.2
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• pp.1364-1369
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• 2015

As the wire bonding process has been converted into BUMP process due to the high density integration of semiconductor chip, the telecommunication line connecting to semiconductor chip and external devices have become finer. As a result, a more precise work is necessary. However, it is difficult to control quantity given the nature of high viscosity of PSPI and the yield rate continues to decline due to the inflow of bubble. Therefore, this paper developed the D&P(degassing and pumping) system to remove and supply gas that is generated from coating the high viscosity photosensitive polyimide(PSPI) in the semiconductor BUMP process.

• Journal of the Korean Ceramic Society
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• v.39 no.8
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• pp.750-757
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• 2002

Self-patterning of thin films using photosensitive sol solution has advantages such as simple manufacturing process compared to photoresist/dry etching process. In this study, ferroelectric $Sr_{0.9}Bi_{2.1}Ta_2O_9$ thin films have been prepared by spin coating method using photosensitive sol solution. Strontium ethoxide, tertramethylheptanedionato bismuth and tantalum ethoxide were used as starting materials. As UV exposure time to the SBT thin film increased, the UV absorption peak intensity of metal ${\beta}$-diketonate decreased due to reduced solubility by M-O-M bond formation. Solubility difference by UV irradiation on SBT thin film allows to obtain a fine patterning of thin film. Also, The ferroelectric properties of the UV irradiated SBT thin films were superior to those of the no-UV irradiated films.