• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.122-122
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• 2010

ZnO is a widely investigated material for the blue and ultraviolet solid-state emitters and detectors. It has been promoted due to a wide-band gap semiconductor which has large exciton binding energy of 60 meV, chemical stability and low radiation damage. However, there are many problems to be solved for the growth of p-type ZnO for practical device applications. Many researchers have made an efforts to achieve p-type conductivity using group-V element of N, P, As, and Sb. In this letter, we have studied the optical characteristics of the antimony-doped ZnO (ZnO:Sb) thin films by means of photoluminescence (PL), PL excitation, temperature-dependent PL, and time-resolved PL techniques. We observed donor-to-acceptor-pair transition at about 3.24 eV with its phonon replicas with a periodic spacing of about 72 meV in the PL spectra of antimony-doped ZnO (ZnO:Sb) thin films at 12 K. We also investigate thermal activation energy and carrier recombination lifetime for the samples. Our result reflects that the antimony doping can generate shallow acceptor states, leading to a good p-type conductivity in ZnO.

• Korean Journal of Optics and Photonics
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• v.31 no.1
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• pp.31-36
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• 2020

We propose a band-switchable terahertz metamaterial based on an etched vanadium dioxide (VO₂) thin film. A line of etched VO₂ thin film was placed in the center gap of the split square-loop shape for the tunability of the metamaterial. The resonance frequency of the metamaterial can be switched from the 1.4 THz band to the 0.7 THz band, according to the insulator-metal phase transition in the VO₂ thin film. The absolute difference in the transmittance of the metamaterial was 78.5% and 65.8% at 0.7 THz and 1.4 THz respectively, according to the band switching. The differential phase shift was around 90°, and the transmittance was stably maintained between 40% and 60% in the middle band of the two switchable resonance-frequency bands.

• Current Optics and Photonics
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• v.6 no.3
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• pp.270-281
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• 2022

Based on the transfer-matrix method (TMM), we report the characteristics of the interface states in one-dimensional (1D) composite structures consisting of two photonic crystals (PCs) composed of binary dielectrics A and B, with unit-cell configurations ABA (PC I) and BAB (PC II). The dependence of the interface states on the number of unit cells N and the boundary factor x are displayed. It is verified that the interface states are independent of N when the PC has inversion symmetry (x = 0.5). Besides, the composite structures support the formation of interface states independent of the PC symmetry, except that the positions of the interface states will be varied within the photonic band gaps. Moreover, the robustness of the interface states against nonuniformities is investigated by adding Gaussian noise to the layer thickness. In the case of inversion symmetry (x = 0.5) the most robust interface states are achieved, while for the other cases (x ≠ 0.5) interface states decay linearly with position inside the band gap. This work could shed light on the development of robust photonic devices.

• The Transactions of the Korean Institute of Electrical Engineers D
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• v.54 no.3
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• pp.180-185
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• 2005

Microstrip antennas generally have a lot of advantages that are thin profile, lightweight, low cost, and conformability to a shaped surface application with integrated circuitry. In addition to military applications, they have become attractive candidates in a variety of commercial applications such as mobile satellite communications, the direct broadcast system (DBS), global positioning system (GPS), and remote sensing. Recently, many of the researches have been achieved for improving the impedance bandwidth of microstrip antennas. The basic form of the microstrip antenna, consisting of a conducting patch printed on a grounded substrate, has an impedance bandwidth of $1\~2\%$. For improvement of narrow bandwidth of microstrip patch, we were designed U-slot microstrip patch antenna in this paper. This antenna had wide bandwidth for all personal communication services (PCS) and IMT-2000. For the design of U-slot microstrip patch antenna using a finite difference time domain(FDTD) method. This numerical method could get the frequency property of U-slot patch antenna and the electromagnetic fields of slots.

• Current Optics and Photonics
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• v.3 no.4
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• pp.304-310
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• 2019

In this paper, a microstructured, hexagonal-shaped dual-core photonic crystal fiber (PCF) is proposed. The proposed structure has specific optical properties to obtain high birefringence and short coupling length, for different values of structural parameters varied over a wide range of wavelength. The properties are analyzed using a solid core of silica material. The proposed structure is implemented as a polarization splitter with splitting length of 1.9 mm and a splitting ratio of -34.988 dB, at a wavelength of 1550 nm. The obtained bandwidth in one band gap of about 81 nm. The numerical analysis ensures that the performance of the proposed polarization splitter is better than that of existing ones.

• 전자공학회논문지 IE
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• v.43 no.1
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• pp.32-38
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• 2006

When induction motor moves, power quality decline of line is risen seriously because provoking voltage drop the moment to system power supply by excessive moving current as well as power-factor drop in case drive by light-load because current reaches in 6 times $\sim$ 8 times of rated current. In this paper, a modeling did an distribution system 13 bus type model and induction machine load presents in IEEE using a PSCAD/EMTDE package, and it displayed an accident conspiracy and a compensating factor of DSTATCOM through simulation show.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.30 no.2
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• pp.91-95
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• 2017

We were designed the hole transport layer of the new composite skeleton structure having a high charge mobility and thermal stability. In this paper, a hole transport layer material based on thiophene molecular structure capable of hole mobility characteristics and high triplet energy was designed and synthesized. The structures and properties of the synthesized compounds were characterized by NMR, fluorescence spectroscopy and energy band gap. As a result of NMR measurement, it was confirmed that when analyzing the integrated type with the position where the measured peak is displayed, it agrees with the structure of hole transport materials. The emission characteristics of the hole transport layer material showed absorption characteristics at 412 nm and 426 nm, respectively, and exhibited emission characteristics in the range of 469 nm and 516 nm.

• Korean Journal of Optics and Photonics
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• v.4 no.4
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• pp.464-473
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• 1993

The dynamics of phase grating formation with visible light in an optical fiber is investigated. Adopting a simple two-photon local bleaching model, it is shown that the grating self-organize into an ideal grating, where the writing frequency is always in the center of the local band gap, as it evolves. The evolution at each point in the fiber is described in terms of a universal parameter that reduces the coupled partial differential equations describing the system to ordinary differential equatior~s. These equations are used to prove that there exists a fixed point of the grating growth process that corresponds to a perfectly phase-mached grating.

• Korean Journal of Optics and Photonics
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• v.8 no.3
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• pp.213-217
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• 1997

We have measured photoluminescence (PL) and time-resolved PL in doped-GaAs. As increasing doping concentration, the PL spectra of n-type GaAs shift to higher energies while the PL spectra of p-type GaAs shift to lower energies than the bandgap of the undoped GaAs. The contribution of the Burstein-Moss effect overrules the band-gap narrowing in n-type GaAs, contrary to p-type GaAs. The PL rise time and decay time become shorter as increasing doping concentration. The PL rise and decay time in doped-GaAs depend on the type of majority carriers and their concentrations, which imply that the carrier-carrier interaction plays an important role in the energy relaxation processes.

• Korean Journal of Optics and Photonics
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• v.20 no.4
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• pp.211-216
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• 2009

Much research into two-dimensional (2-D) photonic crystal (PC) structures has been conducted for realization of ultrasmall optical integrated circuits. A 2-D silicon (Si) PC slab structure with air cladding (n=1) is one of the representative structures in 2-D PCs. While air-clad Si PC slab structures have good optical characteristics, their suspension in air can lead to mechanical weakness, making integration with some optical devices difficult. In this paper, we propose improving the mechanical robustness of PC structure by developing a 2-D Si PC structure with symmetric silica cladding (n=1.44) and comparing its optical properties to that of the air-clad structure. First, we investigate the optical properties of a 2-D Si PC slab structure with air cladding by using a 3-D finite difference time domain method. We determined that a photonic bandgap of 330 nm and a non-leaky propagating bandwidth of 100 nm in the optical communication range are possible. Next, we investigate the optical properties of 2-D Si PC slab structures with silica cladding. Even though the refractive index of the silica cladding is higher than that of air, we developed a silica-clad structure with good optical properties: a photonic band gap of approximately 230 nm and a non-leaky propagating bandwidth of 90 nm, comparable to that of the air-clad PC structures.