• Proceedings of the Korean Society of Precision Engineering Conference
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• 2010.11a
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• pp.65-66
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• 2010

• Proceedings of the Polymer Society of Korea Conference
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• 2006.10a
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• pp.231-231
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• 2006

We fabricated a polymer sub-microstructure for optical device application by two-photon-induced laser lithography technique. Polymer pattern could be minimized as small as ${\sim}100\;nm$. The photopolymerization resin contains laser-dye, thus promising a high level of the optical gain. We utilized the lithography technique to the photonic crystal application, where the template of the two-dimensional photonic crystal was modified by polymer gain medium as defect-shape and line-shape orientations. Photonic band gap effect from polymer-doped photonic crystals is expected to exploit the application such as organic solid-state laser device.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.134.2-134.2
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• 2014

Photonic crystal solar cells have the potential for addressing the disparate length scales in polymer photovoltaic materials, thereby confronting the major challenge in solar cell technology: efficiency. One must achieve simultaneously an efficient absorption of photons with effective carrier extraction. Unfortunately the two processes have opposing requirements. Efficient absorption of light calls for thicker PV active layers whereas carrier transport always benefits from thinner ones, and this dichotomy is at the heart of an efficiency/cost conundrum that has kept solar energy expensive relative to fossil fuels. This dichotomy persists over the entire solar spectrum but increasingly so near a semiconductor's band edge where absorption is weak. We report a 2-D, photonic crystal morphology that enhances the efficiency of organic photovoltaic cells relative to conventional planar cells. The morphology is developed by patterning an organic photoactive bulk heterojunction blend of Poly(3-(2-methyl-2-hexylcarboxylate) thiophene-co-thiophene) and PCBM via PRINT, a nano-embossing method that lends itself to large area fabrication of nanostructures. The photonic crystal cell morphology increases photocurrents generally, and particularly through the excitation of resonant modes near the band edge of the organic PV material. The device performance of the photonic crystal cell showed a nearly doubled increase in efficiency relative to conventional planar cell designs. Photonic crystals can also enhance performance of other optoelectronic devices including organic laser.

• Biotechnology and Bioprocess Engineering:BBE
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• v.9 no.2
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• pp.76-85
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• 2004

Biodevices composed of biomolecular layer have been developed in various fields such as medical diagnosis, pharmaceutical screening, electronic device, photonic device, environmental pollution detection device, and etc. The biomolecules such as protein, DNA and pigment, and cells have been used to construct the biodevices such as biomolecular diode, biostorage device, bioelectroluminescence device, protein chip, DNA chip, and cell chip. Substantial interest has focused upon thin film fabrication or the formation of biomaterials mono- or multi-layers on the solid surfaces to construct the biodevices. Based on the development of nanotechnology, nanoscale fabrication technology for biofilm has been emerged and applied to biodevices due to the various advantages such as high density immobilization and orientation control of immoblized biomolecules. This review described the nanoscale fabrication of biomolecular film and its application to bioelectronic devices and biochips.

• Proceedings of the KSME Conference
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• 2003.04a
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• pp.1078-1082
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• 2003

A feasibility study for the fabrication of master replication with nanostructures by Nanoimprint Lithography (NIL) was investigated for application of polymer Photonic Bandgap (PBG) devices used in photonic IC. Large area gratings of $9{\times}15(mm^2)$ with p = 400 nm was successfully embossed on PMMA on silicon wafer and the embossing parameters (temperature, pressure, time) were established. A precise control of $O_2$ plasma Reactive Ion Etching (RIE) process time allowed window opening over the whole area despite the presence of wafer bending. Master replication with aspect ratio 1 was successfully fabricated, but master replication with aspect ratio 3 needs to optimize parameters. All replications were done in a NIL process.

• ETRI Journal
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• v.43 no.5
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• pp.916-922
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• 2021

We calculated the correlation between the doping concentration of the charge layer and the multiplication layer for separate absorption, grading, charge, and multiplication InGaAs/InAlAs avalanche photodiodes (APDs). For this purpose, a predictable program was developed according to the concentration and thickness of the charge layer and the multiplication layer. We also optimized the design, fabrication, and characteristics of an APD for 20 Gbps application. The punch-through voltage and breakdown voltage of the fabricated device were 10 V and 33 V, respectively, and it was confirmed that these almost matched the designed values. The 3-dB bandwidth of the APD was 10.4 GHz, and the bit rate was approximately 20.8 Gbps.

• Current Optics and Photonics
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• v.6 no.1
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• pp.10-14
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• 2022

Low-threshold optical bistability is essential for practical nonlinear optical applications. Many bistable optical devices based on high-quality-factor resonators have been proposed to reduce the threshold intensity. However, demonstrating high-quality-factor resonance requires complex fabrication techniques. In this work, we numerically demonstrate optical bistability with bound states in the continuum in a simple one-dimensional Si photonic crystal. The designed structure supports bound states in the continuum, producing an ultrahigh quality factor without tough fabrication conditions. The threshold intensity of the designed device is 150 MW/cm² at the optical communication wavelength. This scheme may lead to a new class of nonlinear photonics.

• Journal of Convergence for Information Technology
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• v.10 no.6
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• pp.28-34
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• 2020

A structure in which GaAs and AlGaAs epilayers are formed with a metal organic chemical vapor deposition equipment on a GaAs wafer similar to the structure of making a vertical cavity surface emitting laser is used. Photonic Quantum Ring (PQR) devices that are naturally generated by 3D resonance are manufactured by chemically assisted ion beam etching technology, which is a dry etching method. A new technology that can be fabricated has been studied, and as a result, the possibility of wet etching of a solution containing phosphoric acid, hydrogen peroxide and methanol was investigated, and the device fabrication by applying this method are also discussed. In addition, the spectrum of the fabricated optical device was measured, and the results were theoretically analyzed and compared with the wavelength value obtained by the measurement. It is expected that the PQR device will be able to model cells in a three-dimensional shape or be applied to the display field.

• Proceedings of the Korean Powder Metallurgy Institute Conference
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• 2006.09b
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• pp.910-911
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• 2006

We newly designed and manufactured a new arranging system for a three-dimensional artificial crystal of monosized micro particles. In this system, a robotic micro-manipulator accurately locates the spherical particle onto the lattice point, and subsequently fiber lasers micro-weld the contact points between the neighboring particles. Actually, one- and two-dimensional arrays were constructed using monosized tin particles with the diameter of 400 m. Moreover, due to optimization of the process parameters, we successfully constructed the artificial crystals of simple cubic and diamond structures. In particular, the diamond structure which can represent a large photonic band gap is expected to progress toward a practical photonic crystal device.

• Korean Journal of Optics and Photonics
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• v.10 no.4
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• pp.342-347
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• 1999

As the waveguide width and the radius of curvature get smaller for the effort of monolithic fabrication of integrated photonic devices, the waveguide characteristics change significantly according to the change of the waveguide width or the radius of curvature. Especially, variation of the waveguide width due to fabrication process errors induces a phase error for each waveguide from the change of the propagation constant. Therefore, it is important to quantify these variation effects on the device characteristics for the design and fabrication of highly integrated photonic devices. Here, we analyze four different types of waveguides to get general characteristics in propagation constant change by utilizing the effective index method and the analytic solution method. Futhermore, the output characteristics of two AWG(Arrayed Waveguide Grating) devices are simulated by a highly-functional computer code. The simulated results have been found to be similar to the realistic device characteristics. The required fabrication error limit for the ridge-type InP-AWG device should be smaller than 0.02 ${\mu}{\textrm}{m}$ to get better channel crosstalk than-25 dB, while the required fabrication error limit for rib-type silica-AWG devices may be allowed up to 0.1 ${\mu}{\textrm}{m}$ to obtain better crosstalk than -30 dB.