• 한국정밀공학회:학술대회논문집
• /
• 한국정밀공학회 2010년도 추계학술대회 논문집
• /
• pp.65-66
• /
• 2010

• 한국고분자학회:학술대회논문집
• /
• 한국고분자학회 2006년도 IUPAC International Symposium on Advanced Polymers for Emerging Technologies
• /
• pp.231-231
• /
• 2006

We fabricated a polymer sub-microstructure for optical device application by two-photon-induced laser lithography technique. Polymer pattern could be minimized as small as ${\sim}100\;nm$. The photopolymerization resin contains laser-dye, thus promising a high level of the optical gain. We utilized the lithography technique to the photonic crystal application, where the template of the two-dimensional photonic crystal was modified by polymer gain medium as defect-shape and line-shape orientations. Photonic band gap effect from polymer-doped photonic crystals is expected to exploit the application such as organic solid-state laser device.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
• /
• pp.134.2-134.2
• /
• 2014

Photonic crystal solar cells have the potential for addressing the disparate length scales in polymer photovoltaic materials, thereby confronting the major challenge in solar cell technology: efficiency. One must achieve simultaneously an efficient absorption of photons with effective carrier extraction. Unfortunately the two processes have opposing requirements. Efficient absorption of light calls for thicker PV active layers whereas carrier transport always benefits from thinner ones, and this dichotomy is at the heart of an efficiency/cost conundrum that has kept solar energy expensive relative to fossil fuels. This dichotomy persists over the entire solar spectrum but increasingly so near a semiconductor's band edge where absorption is weak. We report a 2-D, photonic crystal morphology that enhances the efficiency of organic photovoltaic cells relative to conventional planar cells. The morphology is developed by patterning an organic photoactive bulk heterojunction blend of Poly(3-(2-methyl-2-hexylcarboxylate) thiophene-co-thiophene) and PCBM via PRINT, a nano-embossing method that lends itself to large area fabrication of nanostructures. The photonic crystal cell morphology increases photocurrents generally, and particularly through the excitation of resonant modes near the band edge of the organic PV material. The device performance of the photonic crystal cell showed a nearly doubled increase in efficiency relative to conventional planar cell designs. Photonic crystals can also enhance performance of other optoelectronic devices including organic laser.

• Biotechnology and Bioprocess Engineering:BBE
• /
• 제9권2호
• /
• pp.76-85
• /
• 2004

Biodevices composed of biomolecular layer have been developed in various fields such as medical diagnosis, pharmaceutical screening, electronic device, photonic device, environmental pollution detection device, and etc. The biomolecules such as protein, DNA and pigment, and cells have been used to construct the biodevices such as biomolecular diode, biostorage device, bioelectroluminescence device, protein chip, DNA chip, and cell chip. Substantial interest has focused upon thin film fabrication or the formation of biomaterials mono- or multi-layers on the solid surfaces to construct the biodevices. Based on the development of nanotechnology, nanoscale fabrication technology for biofilm has been emerged and applied to biodevices due to the various advantages such as high density immobilization and orientation control of immoblized biomolecules. This review described the nanoscale fabrication of biomolecular film and its application to bioelectronic devices and biochips.

• 대한기계학회:학술대회논문집
• /
• 대한기계학회 2003년도 춘계학술대회
• /
• pp.1078-1082
• /
• 2003

A feasibility study for the fabrication of master replication with nanostructures by Nanoimprint Lithography (NIL) was investigated for application of polymer Photonic Bandgap (PBG) devices used in photonic IC. Large area gratings of $9{\times}15(mm^2)$ with p = 400 nm was successfully embossed on PMMA on silicon wafer and the embossing parameters (temperature, pressure, time) were established. A precise control of $O_2$ plasma Reactive Ion Etching (RIE) process time allowed window opening over the whole area despite the presence of wafer bending. Master replication with aspect ratio 1 was successfully fabricated, but master replication with aspect ratio 3 needs to optimize parameters. All replications were done in a NIL process.

• ETRI Journal
• /
• 제43권5호
• /
• pp.916-922
• /
• 2021

We calculated the correlation between the doping concentration of the charge layer and the multiplication layer for separate absorption, grading, charge, and multiplication InGaAs/InAlAs avalanche photodiodes (APDs). For this purpose, a predictable program was developed according to the concentration and thickness of the charge layer and the multiplication layer. We also optimized the design, fabrication, and characteristics of an APD for 20 Gbps application. The punch-through voltage and breakdown voltage of the fabricated device were 10 V and 33 V, respectively, and it was confirmed that these almost matched the designed values. The 3-dB bandwidth of the APD was 10.4 GHz, and the bit rate was approximately 20.8 Gbps.

• Current Optics and Photonics
• /
• 제6권1호
• /
• pp.10-14
• /
• 2022

Low-threshold optical bistability is essential for practical nonlinear optical applications. Many bistable optical devices based on high-quality-factor resonators have been proposed to reduce the threshold intensity. However, demonstrating high-quality-factor resonance requires complex fabrication techniques. In this work, we numerically demonstrate optical bistability with bound states in the continuum in a simple one-dimensional Si photonic crystal. The designed structure supports bound states in the continuum, producing an ultrahigh quality factor without tough fabrication conditions. The threshold intensity of the designed device is 150 MW/cm² at the optical communication wavelength. This scheme may lead to a new class of nonlinear photonics.

• 융합정보논문지
• /
• 제10권6호
• /
• pp.28-34
• /
• 2020

본 논문에서는 VCSEL (Vertical Cavity Surface Emitting Laser) 레이저를 만드는 구조와 유사한 GaAs 웨이퍼상에 MOCVD (Metal Organic Chemical Vapor Deposition) 장비로 GaAs와 AlGaAs 에피층을 형성시킨 구조를 사용한다. 3차원 공진현상에 의해 자연 발생되는 광양자테 (PQR: Photonic Quantum Ring) 소자를 건식 식각 방법인 CAIBE (Chemically Assisted Ion Beam Etching) 기술로 제작하였지만, 진공 분위기에서 진행해야 하는 문제점 때문에 저가격으로 쉽게 소자를 제작할 수 있는 방법이 연구되었고, 그 결과 인산, 과산화수소, 메탄올이 혼합된 용액의 습식식각 기술로 가능성을 확인하였으며, 이 방법을 적용하여 소자를 제작한 내용에 대해 논한다. 또한, 제작된 광소자의 스펙트럼을 측정하였고, 이 결과들을 이론적으로 해석하여 얻은 파장값과 비교한다. 광양자테 소자는 3차원 형상으로 세포를 모델링하거나, 디스플레이 분야로의 응용이 가능할 것으로 기대한다.

• 한국분말야금학회:학술대회논문집
• /
• 한국분말야금학회 2006년도 Extended Abstracts of 2006 POWDER METALLURGY World Congress Part2
• /
• pp.910-911
• /
• 2006

We newly designed and manufactured a new arranging system for a three-dimensional artificial crystal of monosized micro particles. In this system, a robotic micro-manipulator accurately locates the spherical particle onto the lattice point, and subsequently fiber lasers micro-weld the contact points between the neighboring particles. Actually, one- and two-dimensional arrays were constructed using monosized tin particles with the diameter of 400 m. Moreover, due to optimization of the process parameters, we successfully constructed the artificial crystals of simple cubic and diamond structures. In particular, the diamond structure which can represent a large photonic band gap is expected to progress toward a practical photonic crystal device.

• 한국광학회지
• /
• 제10권4호
• /
• pp.342-347
• /
• 1999

광소자의 소형화와 집적화 노력에 따라 광도파로의 도파폭과 곡률 반경이 작아지면서, 그 경계조건을 만족하는 도파모드와 전파상수의 변화가 심하게 되었다. 특히, 도파폭의 좁아지면서 제작 공정상의 폭조절 오차한계 내의 작은 변화에도 전파상수가 크게 변화하게 되어, 배열도파로(Arrayed Waveguide Grating, AWG)소자에서는 각 도파로 진행광의 위상이 설계와 심하게 달라지고 소자의 성능에 영향이 커지게 되었다. 광소자의 소형화에 따라 심각해지는 이러한 근사설계 오차에 의한 영향을 정량적으로 분석하고 대처하기 위해, 여기서는 유효굴절률법(Effective Index Method)과 해석적 함수해(Analytic Solution Method)를 이요하여 여러 도파로 구조를 해석하여 전파특성 변수를 얻어내었다. 또한, 이를 적용하여 자체 제작한 고기능 전산시늉기를 통해 각종 InP-, Silica-AWG 소자의 성능을 모사하였다. 모사 결과는 실제 제작된 전형적인 소자와 비교하여 매우 유사한 경향을 나타내었으며, Ridge-type Inp-AWG 소자의 경우, 도파폭의 허용공차가 0.02$\mu\textrm{m}$ 이내로 개선될 때, AWG 소자의 신호대잡음비(SNR)가 약 -25dB 이상 가능하게 되며 Rib-type Silica-AWG 소자의 경우는 도파폭 허용공차가 0.1$\mu\textrm{m}$ 정도이기만 해도 약 -30dB 이상 가능한 것으로 모사되었다.