• Macromolecular Research
• /
• v.12 no.4
• /
• pp.391-398
• /
• 2004

Thick-film photolithography is a new technology that combines lithography processes, such as exposure and development, with the conventional thick-film process applied to screen-printing. In this study, we developed a low-temperature cofireable silver paste applicable for thick-film processing to form fine lines using photolitho-graphic technologies. The optimum paste composition for forming fine lines was investigated. The effect of processing parameters, such as the exposing dose, had on the fine-line resolution was also investigated. As the result, we found that the type of polymer and monomer, the silver powder loading, and the amount of photoinitiator were the main factors affecting the resolution of the fine lines. The developed photoimageable silver paste was printed on a low-temperature cofireable green sheet, dried, exposed, developed in an aqueous process, laminated, and then fired. Our results demonstrate that thick-film fine lines having widths < 20 $\mu\textrm{m}$ can be obtained after cofiring.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2003.05c
• /
• pp.240-244
• /
• 2003

후막 리소그라피 기술은 기판 위에 감광성 페이스트를 도포한 후 자외선과 패턴마스크를 사용하는 광식각(photolithography) 방법을 이용하여 세부 패턴을 형성시키는 기술이다, 이 기술은 후막기술로서는 높은 해상도인 선폭 $30{\mu}m$ 이하의 미세도선을 구현할 수 있어, 후막기술을 이용한 고주파 모듈의 제조에 있어서 새로운 대안으로 주목받고 있다. 본 연구에서는 알루미나 기판 상에 수십 ${\mu}m$ 이하의 마이크로 비아를 가지는 유전체 층을 형성시킬 수 있는 저온소결용 감광성 유전체 페이스트를 개발하였다. 저온소결용 유전체 파우더와 폴리머, 모노머, 광개시제 등의 양을 조절하여 마이크로 비아를 형성할 수 있는 최적 페이스트 조성을 연구하였으며, 노광량 및 현상시간과 같은 공정변수가 마이크로 비아의 해상도에 미치는 영향을 평가하였다. 알루미나 기판에 전면 프린팅 한 후 건조, 노광, 현상, 소성 과정을 거쳐 소결전 $37{\mu}m$, 소결후 $49{\mu}m$의 해상도를 가지는 마이크로 비아를 형성할 수 있었다.

• Journal of Electrical Engineering and Technology
• /
• v.2 no.2
• /
• pp.274-279
• /
• 2007

This study focuses on the enhancement of maskless photolithography as well as the peptide synthesis application with single crystalline silicon micromirrors. A single crystalline silicon micromirror array has been designed and fabricated in order to improve its application to the peptide synthesis. A micromirror rotates about ${\pm}\;9^{\circ}$ at the pull-in voltage, which can range from 90.7 V to 115.1 V. A $210\;{\mu}m-by-210\;{\mu}m$ micromirror device with $270\;{\mu}m$ mirror pitch meets the requirements of an adequately precise separation for peptide synthesis. Synthetic 16 by 16 peptide array corresponds to the same number of micromirrors. The large size of peptide pattern and the separation facilitate biochip experiments using fluorescence assay. The peptide pattern has been synthesized on the GPTS-PEG200 surface with BSA-blocking and thereupon the background was acetylated to reject non-specific bindings. Hence, an averaged slope at the pattern edge has been distinguishably improved in comparison to patterning results from an aluminum micromirror.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.20 no.4
• /
• pp.294-302
• /
• 2007

We studied on possibility of the application of photolithography technique to patterning the organic active layer poly(3-hexylthiophene) (P3HT). In the case of selective etching method, we made thin oxide film on P3HT thin film using $O_2$ treatment. We achieved the field-effect mobilities in the saturation regime ${\sim}1.2{\times}10^{-3}\;cm^2/V{\cdot}s$, $I_{on/off}$ ratios ${\sim}10^5$ in the selective etching method, ${\sim}7.4{\times}10^{-4}cm^2/V{\cdot}s$, $I_{on/off}$ ratios ${\sim}5{\times}10^3$ in the lift-off one. These values are higher than ones of the unpatterned P3HT-based OTFTs. On the basis of the above results, we demonstrate the photolithographic patterning for P3HT active layer is successfully carried out without degradation of P3HT.

• Journal of the Korean Society for Heat Treatment
• /
• v.36 no.3
• /
• pp.137-144
• /
• 2023

Micro electro mechanical systems (MEMS) and precision machines require excellent friction and wear characteristics to improve energy efficiency generated during sliding motion. In this study, DLC thin film with high hardness and low friction was deposited on STS304 substrate material by CVD method, and dot-shaped convex and concave micropatterns were fabricated by photolithography process. The diameter of the pattern was 20 ㎛, the pitch was 40 ㎛, and a pattern having a mesh type arrangement was fabricated and an abrasion test was performed. The results of the wear test on the micro pattern confirmed that the friction coefficient characteristics were improved compared to STS 304 and DLC thin films. In addition, in this result, the micro-pattern showed 11.4% more improved friction coefficient than the DLC thin film. The friction coefficient characteristics for convex and concave patterns of the same size showed almost similar results.

• Journal of Powder Materials
• /
• v.30 no.2
• /
• pp.156-168
• /
• 2023

The semiconductor industry faces physical limitations due to its top-down manufacturing processes. High cost of EUV equipment, time loss during tens or hundreds of photolithography steps, overlay, etch process errors, and contamination issues owing to photolithography still exist and may become more serious with the miniaturization of semiconductor devices. Therefore, a bottom-up approach is required to overcome these issues. The key technology that enables bottom-up semiconductor manufacturing is area-selective atomic layer deposition (ASALD). Here, various ASALD processes for elemental metals, such as Co, Cu, Ir, Ni, Pt, and Ru, are reviewed. Surface treatments using chemical species, such as self-assembled monolayers and small-molecule inhibitors, to control the hydrophilicity of the surface have been introduced. Finally, we discuss the future applications of metal ASALD processes.

• Journal of the Microelectronics and Packaging Society
• /
• v.12 no.4 s.37
• /
• pp.275-280
• /
• 2005

We propose a new approach to greatly simplify the fabrication of conventional nanoimprint lithography (NIL) by combined nanoimprint and photolithography (CNP). We introduce a hybrid mask mold (HMM) made from UV transparent material with a UV-blocking Cr metal layer placed on top of the mold protrusions. We used a negative tone photo resist (PR) with higher selectivity to substrate the CNP process instead of the UV curable monomer and thermal plastic polymer that has been commonly used in NIL. Self-assembled monolayer (SAM) on HMM plays a reliable role for pattern transfer when the HMM is separated from the transfer layer. Hydrophilic $SiO_2$ thin film was deposited on all parts of the HMM, which improved the formation of SAM. This $SiO_2$ film made a sub-10nm formation without any pattern damage. In the CNP technique with HMM, the 'residual layer' of the PR was chemically removed by the conventional developing process. Thus, it was possible to simplify the process by eliminating the dry etching process, which was essential in the conventional NIL method.

• KIEE International Transactions on Electrophysics and Applications
• /
• v.4C no.4
• /
• pp.133-136
• /
• 2004

This research aims to develop a DNA chip array without an indicator. We fabricated a microelectrode array through photolithography technology. Several DNA probes were immobilized on an electrode. Then, target DNA was hybridized and measured electrochemically. Cyclic-voltammograms (CVs) showed a difference between the DNA probe and mismatched DNA in an anodic peak. This indicator-free DNA chip resulted in a sequence-specific detection of the target DNA.

• 한국정보디스플레이학회:학술대회논문집
• /
• 2004.08a
• /
• pp.769-772
• /
• 2004

We report on the developed fabrication method of lanthanide-doped xerogel/porous anodic alumina structures for an image formation via the aluminum anodization, the sol-gel synthesis, and the photolithography process. The structures of europium- or terbium-doped xerogel/porous anodic alumina are also considered in view of application in electroluminescent devices.

• Proceedings of the Materials Research Society of Korea Conference
• /
• 2003.11a
• /
• pp.104-104
• /
• 2003

RF magnetron sputtering 법을 이용하여 LaA1O$_3$, SrTiO$_3$, MgO 단결정 기판 위에 BaTiO$_3$ 박막을 에피텍셜하게 증착하여 박막의 특성과 마이크로 웨이브에서의 유전특성을 평가하였다. 각 기판위에 증착한 박막의 격자상수와 FWHM을 조사하였고, pole figure로 에피텍셜 성장을 관찰하였다. 각 시편에 상부 전극으로 interdigital 타입의 전극을 photolithography 하여 캐패시턴스와 tan $\delta$을 조사하였다. 각 기판의 변화에 따른 격자상수 변화와 유전 특성의 변화를 고찰하였다.