• 한국전기전자재료학회논문지
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• 제14권2호
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• pp.139-144
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• 2001

In this study, we have investigated the photoinduced birefringence of Ag plarized-photodoping in double-layer of Ag doped chalcognide thin films and dependence of polarization states in chalcogenide thin films. Also, we have investigated the polarization dependence of photoinduced birefringence and the anisotropy of absorption in an amorphous As$\sub$40/Ge$\sub$10/Se$\sub$15/S$\sub$35/ chalcogenide thin films using two 632.8nm He-Ne lasers, which have a smaller energy than the optical energy gap (E$\sub$OP/) of the film, i.e., an exposure of sub-bandgap light (hν$\sub$op/). The photoinduced phenomena of Ag polarized-photodooping increasing the linear dichroism(d), about 84% and birefringence(Δn), about 23%. It will offer lots of information for the photodoping mechanism and analysis of chalcogenide thin films.

• 한국전기전자재료학회논문지
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• 제14권1호
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• pp.58-63
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• 2001

We have investigated the photoinduced birefrinence by the electric field effects in chalcogenide thin films. The electric field effects have investigated the various applied bias voltages(forward and reverse) in chalcogenide thin films. A pumping (inducing) and a probing bean were using a linearly polarized He-Ne laser light (633nm) and semiconductor laser light (780nm), respectively. The result was shown that the birefringence had a higher value in DC +2V than the others, Also, we obtained the birefringence in the electric field effects by various voltages. In addition, we have discussed the anisotropy property of chalcogenide thin films by the electric field effects.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2000년도 추계학술대회 논문집 학회본부 C
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• pp.419-421
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• 2000

In this study, we observed the photoinduced birefringence of Ag polarized-photodoping in chalcogenide thin film and the double-layer of Ag doped chalcogenide thin film using the irradiation with the polarized He-Ne laser light. The photoinduced birefringence of Ag polarized-photodoping results in increasing the sensitivity of linearly anisotropy intensity and birefringence(${\Delta}n$). The Ag polarized-photodoping shows improvement of the photoinduced anisotropy property, in polarized photodoping of the chalcogenide thin film. It will offer lots of information for the photodoping mechanism and analysis of chalcogenide thin film.

• Bulletin of the Korean Chemical Society
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• 제20권10호
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• pp.1186-1194
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• 1999

Photoresponsive side chain polymers containing aminonitro azobenzene were synthesized for studying optically induced birefringence. Four different copolymers were prepared using methacrylate, a-methylstyrene, and itaconate monomer. Two copolymers are totally amorphous and the other two are liquid crystalline in nature. Trans-to-cis photoisomerization was observed under the exposure of UV light with UV-VIS absorption spectroscopy. Reorientation of polar azobenzene molecules induced optical anisotropy under a linearly polarized light at 532 nm. The dynamic parameters of optically induced birefringence let us compare the effect of polymeric structure on the rate of growth and decay of the birefringence. Besides the effect of glass transition temperature on the dynamics of photoinduced birefringence, we focused our interests on the geometrical hindrance of polar azobenzene molecules and cooperative motion of environmental mesogenic molecules in the vicinity of polar azobenzene moiety.

• 한국광학회:학술대회논문집
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• 한국광학회 2000년도 하계학술발표회
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• pp.250-251
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• 2000

The photoisomerization of the crosslinked and uncrosslinked polymer-pair with azo linkages was studied by the photoinduced birefringence. The amount of photoinduced birefringence of crosslinked polymer system was much smaller than that of uncrosslinked polymer system, even when varying pumping laser power, so the photoisomerization of an azo chromophores could be controlled by crosslinking process. (omitted)

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 춘계학술대회 논문집 디스플레이 광소자 분야
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• pp.191-194
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• 2000

In this study, we have investigated the photoinduced birefringence(PB), ${\Delta}n$ in chalcogenide $As_{40}Ge_{10}Se_{15}S_{35}$ thin film with a He-Ne Laser at 633nm as In this study, we have investigated the photoinduced birefringence(PB), ${\Delta}n$ in chalcogenide $As_{40}Ge_{10}Se_{15}S_{35}$ thin film with a He-Ne Laser at 633nm as a pumping beam and a semiconductor laser at 780nm as a probing beam. The PB for the variable thickness of thin films was investigated. The thickness of the thin films is about $0.4{\mu}m$, $0.92{\mu}m$, $1.4{\mu}m$, $2.0{\mu}m$, respectively. The experimental result of PB in chalcogenide thin films was represented higher PB in the thickness of thin film, $0.92{\mu}m$. It was meant to represent higher PB in the thickness of the film that was made closely the optimal thickness, $0.96{\mu}m$. The optimal thickness of thin film, $0.96{\mu}m$ was calculated by the penetration depth of the pumping light Also, the PB in thickness of $0.92{\mu}m$ was obtained almost two times higher 0.15 than other thickness of thin films.

• Bulletin of the Korean Chemical Society
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• 제20권9호
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• pp.1010-1016
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• 1999

We synthesized the photoresponsive side chain polymers containing aminonitro azobenzene for studying the effect of temperature on photoinduced birefringence. Four different copolymers were prepared using methacrylate, α-methylstyrene, and itaconate monomer. Photoisomerization was observed under the exposure of UV light using UV-VIS absorption spectroscopy. Reorientation of polar azobenzene molecules induced optical anisotropy under a linearly polarized light at 532 nm. The change of the birefringence was observed with increasing the sample temperature under a continuous irradiation of excitation light. We could estimate the activation energy of molecular motion in thermal and photochemical mode. Besides the effect of glass transition temperature on the activation energy, we focused our interests on the effect of geometrical hindrance of polar azobenzene molecules and cooperative motion of environmental mesogenic molecules in the vicinity of polar azobenzene molecules.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2000년도 하계학술대회 논문집 C
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• pp.1727-1729
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• 2000

We has investigated the birefringence by the assisted electric field effect on $As_{40}Ge_{10}Se_{15}S_{35}$ thin films. Photoinduced birefringence has been studied in a chalcogenide material. We induced this thin films using linearly polarized He-Ne laser light(633nm) and detected polarized semiconductor laser light(780nm). To investigate the effect of electric field, various bias voltages applied. The result is shown that the birefringence has a higher value in +2V than others. We obtained the birefringence in the electric field effects by various voltages.

• 한국광학회:학술대회논문집
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• 한국광학회 2003년도 제14회 정기총회 및 03년 동계학술발표회
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• pp.250-251
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• 2003

여러 광기록 매질 중 아조(azo)계열의 색소를 첨가한 고분자 필름은 색소의 선택에 따라 원하는 감광 파장대를 선택할 수 있는 특징과 뛰어난 메모리 휘발성, 편광 선택이 가능한 점, 높은 환경적 안정성 때문에 1986년 Todorow 그룹이 아조색소를 함유한 고분자 필름의 광유도 비등방성에 관한 논문을 발표한 이래 많은 연구가 이루어지고 있다. 아조계열 색소분자는 PVA 고분자 매트릭스(matrix)속에서 trans 혹은 cis이성질체 중 하나의 상태로 존재할 수 있으나 trans 상태는 cis 상태보다 안정한 상태이므로 광이 없을 때는 대부분 trans 상태로 존재하게 된다. (중략)

• 한국광학회:학술대회논문집
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• 한국광학회 2007년도 하계학술발표회 논문집
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• pp.275-276
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• 2007

체적형 홀로그래픽 메모리는 고용량의 저장밀도와 빠른 전송속도를 가지는 장점을 가지고있다. 더 높은 저장밀도를 얻기 위해 다양한 다중화 기법들이 연구되고 있다. 일정한 공간에 여러 개의 정보를 한꺼번에 저장할 수 있는 다중화 기법에는 각도에 따른 다중화, 기록 위치에 따른 다중화, 위상 변화에 따른 다중화를 비롯한 여러 가지 방법이 있다. 대부분의 다중화 기법들은 홀로그램을 저장할 때 순차적으로 기록하게 된다. 하지만 포토폴리머에 한번 정보가 저장되면 그 위에 다시 기록이 되지 않는다. 그래서 한번에 여러 개의 데이터를 저장하고 재생하는 시스템의 필요성이 요구된다. 본 논문에서는 이러한 점을 고려하여 빛의 편광성분을 이용해 다중화 하는 방법을 연구하였다.