• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2000년도 제1회 학술대회 논문집
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• pp.133-134
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• 2000

Effect of nitrogen doping on field emission characteristics of patterned Diamond-like Carbon (DLC) films was studied. The patterned DLC films were fabricated by the method reported previously[1]. Nitrogen doping in DLC film was carried out by introducing $N_2$ gas into the vacuum chamber during deposition. Higher emission current density of $0.3{\sim}0.4$ $mA/cm^2$ was observed for the films with 6 at % N than the undoped films but the emission current density decreased with further increase of N contents. Some changes in CN bonding characteristics with increasing N contents were observed. The CN bonding characteristics which seem to affect the electron emission properties of these films were studied by Raman spectroscopy, x-ray photoemission spectroscopy (XPS) and Fourier transform infrared spectroscopy (FT-IR). The electrical resistivity and the optical band gap measurements showed consistence with the above analyses.

• 전기전자학회논문지
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• 제21권3호
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• pp.297-308
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• 2017

By using electron beam evaporation under appropriate conditions, we obtained graphene intercalated sheets on Si(111) with an average crystallite size less than 11nm. The formation of such nanocrystalline graphene was found as a time-dependent function of carbon deposition at a substrate temperature of $1000^{\circ}C$. The structural and electronic properties as well as the surface morphology of such produced materials have been confirmed by reflection high energy electron diffraction, Auger electron spectroscopy, X-ray photoemission spectroscopy, Raman spectroscopy, scanning electron microscopy, atomic force microscopy and scanning tunneling microscopy.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.362-362
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• 2014

Atomic layer deposition (ALD) can be regarded as a special variation of the chemical vapor deposition method for reducing film thickness. ALD is based on sequential self-limiting reactions from the gas phase to produce thin films and over-layers in the nanometer scale with perfect conformality and process controllability. These characteristics make ALD an important film deposition technique for nanoelectronics. Tantalum pentoxide ($Ta_2O_5$) has a number of applications in optics and electronics due to its superior properties, such as thermal and chemical stability, high refractive index (>2.0), low absorption in near-UV to IR regions, and high-k. In particular, the dielectric constant of amorphous $Ta_2O_5$ is typically close to 25. Accordingly, $Ta_2O_5$ has been extensively studied in various electronics such as metal oxide semiconductor field-effect transistors (FET), organic FET, dynamic random access memories (RAM), resistance RAM, etc. In this experiment, the variations of chemical and interfacial state during the growth of $Ta_2O_5$ films on the Si substrate by ALD was investigated using in-situ synchrotron radiation photoemission spectroscopy. A newly synthesized liquid precursor $Ta(N^tBu)(dmamp)_2$ Me was used as the metal precursor, with Ar as a purging gas and $H_2O$ as the oxidant source. The core-level spectra of Si 2p, Ta 4f, and O 1s revealed that Ta suboxide and Si dioxide were formed at the initial stages of $Ta_2O_5$ growth. However, the Ta suboxide states almost disappeared as the ALD cycles progressed. Consequently, the $Ta^{5+}$ state, which corresponds with the stoichiometric $Ta_2O_5$, only appeared after 4.0 cycles. Additionally, tantalum silicide was not detected at the interfacial states between $Ta_2O_5$ and Si. The measured valence band offset value between $Ta_2O_5$ and the Si substrate was 3.08 eV after 2.5 cycles.

• 한국공작기계학회:학술대회논문집
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• 한국공작기계학회 2004년도 춘계학술대회 논문집
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• pp.500-503
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• 2004

본 연구에서는 금속 원자를 단열 팽창시켜 클러스터를 만들고, 생성된 클러스터를 이온화시킨 후 집속렌즈 및 electric quadrupole을 이용하여 기판으로 증착 하였다. 집속렌즈의 설계에서는 단일 초점 방식의 렌즈보다 성능을 높이기 위하여 이중 초점과 핀홀을 써서 집속 효과 및 효율을 높였다. 렌즈의 설계는 일반적으로 하전입자의 에너지 손실 없이 집속할수 있는 Einzel 렌즈를 기본으로 하였으며, SIMION software 를 사용하여 시뮬레이션 하였다. 시뮬레이션 후 실제 렌즈계 및 정전압원을 제작하여 금(Au)의 클러스터를 생성하여 렌즈계를 통과한 후 실제 기판위로 증착이 되는 것을 AFM(Atomic force microscopy)과 XPS(X-ray photoemission spectroscopy)를 이용해 조사하여 렌즈계가 실제로 동작함을 확인하였다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2002년도 제23회 학술발표회 초록집
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• pp.183-184
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• 2002

• 한국진공학회:학술대회논문집
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• 한국진공학회 2005년도 제28회 학술발표회 초록집
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• pp.33-33
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• 2005

• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.163.1-163.1
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• 2014

Electron-electron interactions bear important information on fundamental electronic properties such as electron effective mass, conductivity, and charge mobility. By using angle-resolved photoemission spectroscopy, here we address unusual electron self-energy in graphene induced by the electron-electron interactions, which are distinguished from those of an ordinary Fermi liquid. Our findings provide a new route for two-dimensional electron systems toward device applications.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2008년도 제34회 동계학술대회 초록집
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• pp.155-155
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• 2008

• 한국진공학회:학술대회논문집
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• 한국진공학회 2007년도 제33회 하계학술대회 초록집
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• pp.140-140
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• 2007

• 한국자기학회지
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• 제26권6호
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• pp.185-189
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• 2016

이 연구에서는 방사광을 이용한 연 X-선 흡수 분광법(soft X-ray absorption spectroscopy: XAS)과 광전자 분광법(photoemission spectroscopy: PES) 을 이용하여 반쪽금속 반강자성체 후보 물질인 $Mn_3Ga$ 호이슬러 화합물의 전자구조를 연구하였다. 이 연구에 사용된 시료는 full-Heusler $Mn_3Ga$로 ball milling 후 열처리하지 않은 시료와 ball milling 후 $400^{\circ}C$에서 열처리한 두 시료를 사용하였다. XAS 분석에 의하면 $Mn_3Ga$에서 Mn 이온들의 원자가는 $Mn^{2+}$ 상태임을 알 수 있었으며, 국소적으로 팔면체 대칭성을 가진 Mn 이온들과 사면체 대칭성을 가진 Mn 이온들이 섞여 있음을 알 수 있었다. 그리고 $Mn_3Ga$의 가전자띠 PES 스펙트럼은 전자구조 계산에 의한 반쪽 금속성 상태밀도와 대체로 유사함을 발견하였다.