• 한국정보디스플레이학회:학술대회논문집
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• 2000.01a
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• pp.133-134
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• 2000

Effect of nitrogen doping on field emission characteristics of patterned Diamond-like Carbon (DLC) films was studied. The patterned DLC films were fabricated by the method reported previously[1]. Nitrogen doping in DLC film was carried out by introducing $N_2$ gas into the vacuum chamber during deposition. Higher emission current density of $0.3{\sim}0.4$ $mA/cm^2$ was observed for the films with 6 at % N than the undoped films but the emission current density decreased with further increase of N contents. Some changes in CN bonding characteristics with increasing N contents were observed. The CN bonding characteristics which seem to affect the electron emission properties of these films were studied by Raman spectroscopy, x-ray photoemission spectroscopy (XPS) and Fourier transform infrared spectroscopy (FT-IR). The electrical resistivity and the optical band gap measurements showed consistence with the above analyses.

• Journal of IKEEE
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• v.21 no.3
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• pp.297-308
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• 2017

By using electron beam evaporation under appropriate conditions, we obtained graphene intercalated sheets on Si(111) with an average crystallite size less than 11nm. The formation of such nanocrystalline graphene was found as a time-dependent function of carbon deposition at a substrate temperature of $1000^{\circ}C$. The structural and electronic properties as well as the surface morphology of such produced materials have been confirmed by reflection high energy electron diffraction, Auger electron spectroscopy, X-ray photoemission spectroscopy, Raman spectroscopy, scanning electron microscopy, atomic force microscopy and scanning tunneling microscopy.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.362-362
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• 2014

Atomic layer deposition (ALD) can be regarded as a special variation of the chemical vapor deposition method for reducing film thickness. ALD is based on sequential self-limiting reactions from the gas phase to produce thin films and over-layers in the nanometer scale with perfect conformality and process controllability. These characteristics make ALD an important film deposition technique for nanoelectronics. Tantalum pentoxide ($Ta_2O_5$) has a number of applications in optics and electronics due to its superior properties, such as thermal and chemical stability, high refractive index (>2.0), low absorption in near-UV to IR regions, and high-k. In particular, the dielectric constant of amorphous $Ta_2O_5$ is typically close to 25. Accordingly, $Ta_2O_5$ has been extensively studied in various electronics such as metal oxide semiconductor field-effect transistors (FET), organic FET, dynamic random access memories (RAM), resistance RAM, etc. In this experiment, the variations of chemical and interfacial state during the growth of $Ta_2O_5$ films on the Si substrate by ALD was investigated using in-situ synchrotron radiation photoemission spectroscopy. A newly synthesized liquid precursor $Ta(N^tBu)(dmamp)_2$ Me was used as the metal precursor, with Ar as a purging gas and $H_2O$ as the oxidant source. The core-level spectra of Si 2p, Ta 4f, and O 1s revealed that Ta suboxide and Si dioxide were formed at the initial stages of $Ta_2O_5$ growth. However, the Ta suboxide states almost disappeared as the ALD cycles progressed. Consequently, the $Ta^{5+}$ state, which corresponds with the stoichiometric $Ta_2O_5$, only appeared after 4.0 cycles. Additionally, tantalum silicide was not detected at the interfacial states between $Ta_2O_5$ and Si. The measured valence band offset value between $Ta_2O_5$ and the Si substrate was 3.08 eV after 2.5 cycles.

• Proceedings of the Korean Society of Machine Tool Engineers Conference
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• 2004.04a
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• pp.500-503
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• 2004

본 연구에서는 금속 원자를 단열 팽창시켜 클러스터를 만들고, 생성된 클러스터를 이온화시킨 후 집속렌즈 및 electric quadrupole을 이용하여 기판으로 증착 하였다. 집속렌즈의 설계에서는 단일 초점 방식의 렌즈보다 성능을 높이기 위하여 이중 초점과 핀홀을 써서 집속 효과 및 효율을 높였다. 렌즈의 설계는 일반적으로 하전입자의 에너지 손실 없이 집속할수 있는 Einzel 렌즈를 기본으로 하였으며, SIMION software 를 사용하여 시뮬레이션 하였다. 시뮬레이션 후 실제 렌즈계 및 정전압원을 제작하여 금(Au)의 클러스터를 생성하여 렌즈계를 통과한 후 실제 기판위로 증착이 되는 것을 AFM(Atomic force microscopy)과 XPS(X-ray photoemission spectroscopy)를 이용해 조사하여 렌즈계가 실제로 동작함을 확인하였다.

• Proceedings of the Korean Vacuum Society Conference
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• 2002.06a
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• pp.183-184
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• 2002

• Proceedings of the Korean Vacuum Society Conference
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• 2005.02a
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• pp.33-33
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• 2005

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.163.1-163.1
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• 2014

Electron-electron interactions bear important information on fundamental electronic properties such as electron effective mass, conductivity, and charge mobility. By using angle-resolved photoemission spectroscopy, here we address unusual electron self-energy in graphene induced by the electron-electron interactions, which are distinguished from those of an ordinary Fermi liquid. Our findings provide a new route for two-dimensional electron systems toward device applications.

• Proceedings of the Korean Vacuum Society Conference
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• 2008.02a
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• pp.155-155
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• 2008

• Proceedings of the Korean Vacuum Society Conference
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• 2007.08a
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• pp.140-140
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• 2007

• Journal of the Korean Magnetics Society
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• v.26 no.6
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• pp.185-189
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• 2016

By employing photoemission spectroscopy (PES) and soft X-ray absorption spectroscopy (XAS), the electronic structure of the candidate half-metallic antiferromagnet of $Mn_3Ga$ Heusler compound has been investigated. We have studied two ball-milled $Mn_3Ga$ powder samples, one after annealing and the other without annealing, respectively. Based on the Mn 2p XAS study, we have found that Mn ions are nearly divalent in $Mn_3Ga$ and that the Mn ions having the locally octahedral symmetry and those having the locally tetrahedral symmetry are both present in $Mn_3Ga$. We have found relatively good agreement between the measured valence-band PES spectrum of $Mn_3Ga$ and the calculated density of states, which is in agreement with the half-metallic electronic structure of $Mn_3Ga$.