• Proceedings of the Korean Vacuum Society Conference
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• 1996.02a
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• pp.156-156
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• 1996

• Proceedings of the Korean Vacuum Society Conference
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• 1996.02a
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• pp.164-164
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• 1996

• Proceedings of the Korean Vacuum Society Conference
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• 2008.08a
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• pp.227-227
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• 2008

• Journal of the Korean institute of surface engineering
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• v.23 no.3
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• pp.183-193
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• 1990

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.85.1-85.1
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• 2016

현대 과학기술에는 표면/계면 및 나노물질의 구조와 물성을 분석하는 다양한 방법들이 존재한다. 이들 분석장비들의 분해능과 감도의 향상으로 이전에는 보지 못한 물성들이 속속 발견되고 있다. 이러한 흐름 속에서 분석장비들의 다기능 시대가 열리고 있다. 예전에는 성분, 형태, 구조, 전자구조 등을 분석하기 위해 각각에 해당하는 분석장비들이 동원되었다. 하지만 21세기에 접어들어 분석장비들이 두 종류 이상의 분석이 가능하도록 개발되었다. 예를 들면, TEM으로 형태를 보는 것 외에도 TED와 EELS로 구조와 성분을 동시에 확인할 수 있게 되었다. 전통적인 성분 및 전자구조 분석법의 하나인 광전자분광법도 microscopy 기능을 탑재하는 변신이 있었다. 본 발표에서는 빛과 전자를 시료에 조사하여 물질의 성분, 형태, 구조, 전자구조 등을 동시에 분석이 가능한 분석법들에 대해 소개하고자 한다. 그 중, SPEM(Scanning Photoelectron Emission Microscopy)은 포항가속기연구소에 설치되어 있으며, PEEM(Photoelectron Microscopy)과 LEEM(Low Energy Electron Microscopy)은 수차보정장치를 갖춘 사양으로 최근 한국기초과학지원연구원에 설치되었다. 위에 언급한 장비를 활용하여 얻은 데이터를 바탕으로 나노물질의 표면 및 계면의 특성을 분석하는 방법 및 최근 연구 결과를 소개하고자 한다.

• Transactions on Electrical and Electronic Materials
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• v.16 no.6
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• pp.346-350
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• 2015

In this study, we carried out an investigation of the etch characteristics of TiO₂ thin films and the selectivity of TiO₂ to SiO₂ in adaptive coupled C1₂/Ar plasma. The maximum etch rate of the TiO₂ thin film was 136±5 nm/min at a gas mixing ratio of C1₂/Ar (75%:25%). The X-ray photoelectron spectroscopy (XPS) analysis showed the efficient destruction of oxide bonds by the ion bombardment as well as the accumulation of low volatile reaction products on the etched surface.

• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.117-117
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• 2015

Availability of X-ray photoelectron spectroscopy (XPS) for the identification of ionic liquids (ILs) was tested. Commercially available ionic liquids (1-butyl-3-methyl imidazolium tetrafluoroborate ([BMIM] $BF_4$), (1-butyl-3-methyl imidazolium trifluoromethanesulfonate ([BMIM] OTf), (1-butyl-3-methyl imidazolium hexafluorophosphate ([BMIM] $PF_6$), 1-hexyl-3-imidazolium hexafluorophosphate ([HMIM] $PF_6$), and 1-ethyl-3-methylimidazolium bis(trifluoromethylsulfonyl)imide ([EMIM] $Tf_2N$) were qualitatively and semi-quantitatively analyzed with XPS. In order to confirm whether the results of XPS were correct, conventional method such as a nuclear magnetic resonance (NMR) was performed. After the XPS results were convinced by NMR, we synthesized ILs (1-(4-sulfonic acid) butyl-3-butylimidazolium trifluoromethanesulfonate ([SBBIM] OTf), 1-(4-sulfonic acid) propyl-3-methylimidazolium trifluoromethanesulfonate ([SPMIM] OTf), and 1-(4-sulfonic acid) propyl-3-butylimidazolium trifluoromethanesulfonate ([SPBIM] OTf) and analyzed it with XPS and NMR as well. It was successful the usage of XPS to analyze ILs without any purification processes.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.15 no.6
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• pp.551-557
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• 2002

Carbon nitride films have been deposited on Si(100) substrate by a high voltage discharge plasma combined with laser ablation in a nitrogen atmosphere. The films were grown both with the without the presence of an assisting focused Nd:YAG laser ablation. The laser ablation of the graphite target leads to vapor plume plasma expending into th ambient nitrogen arc discharge area. X-ray photoelectron spectroscopy and Auger electron spectroscopy were used to identify the binding structure and the content of the nitrogen species in the deposited films. The nitrogen content of the films was found to increase drastically with an increase of nitrogen pressure. The surface morphology of the films was studied using a scanning electron microscopy. Data of infrared spectroscopy and x-ray photoelectron spectroscopy indicate the existence of carbon-nitrogen bonds in the films. The x-ray diffraction measurements have also been taken to characterize the crystal properties of the obtained films.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.27 no.5
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• pp.312-316
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• 2014

Photoemission is a process in which photons are converted into free electrons. Photocathodes are the typical materials for the process. They emit electrons when a light is irradiated upon. The traditional method of manufacturing photocathodes is complicated, requires specialized equipment, and is limited very small sized samples. $Cs_3Sb$ photocathode was formed on a substrate in $N_2$ atmospheric conditions. The photocathode formation was a gas phase reaction with the substrate. Vacuum devices were made to test electron emission characteristics of the formed photocathode. Visible light of wavelength 475 nm was used for the primary light source. The results showed high current density and long term stability of the photoelectron emission.

• Transactions on Electrical and Electronic Materials
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• v.6 no.4
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• pp.164-168
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• 2005

Effects of high-temperature slurry were investigated on the chemical mechanical polishing (CMP) performance of tetra-ethyl ortho-silicate (TEOS) film with silica and ceria slurries by the surface analysis of X-ray photoelectron spectroscopy (XPS). The pH showed a slight tendency to decrease with increasing slurry temperature, which means that the hydroxyl $(OH^-)$ groups increased in slurry as the slurry temperature increased and then they diffused into the TEOS film. The surface of TEOS film became hydro-carbonated by the diffused hydroxyl groups. The hydro-carbonated surface of TEOS film could be removed more easily. Consequently, the removal rate of TEOS film improved dramatically with increasing slurry temperature.