• JSTS:Journal of Semiconductor Technology and Science
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• v.14 no.4
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• pp.443-450
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• 2014

This paper presents a 20-Gb/s optical receiver circuit fabricated with standard 65-nm CMOS technology. Our receiver circuits are designed with consideration for parasitic inductance and capacitance due to bonding wires connecting the photodetector and the circuit realized separately. Such parasitic inductance and capacitance usually disturb the high-speed performance but, with careful circuit design, we achieve optimized wide and flat response. The receiver circuit is composed of a transimpedance amplifier (TIA) with a DC-balancing buffer, a post amplifier (PA), and an output buffer. The TIA is designed in the shunt-feedback configuration with inductive peaking. The PA is composed of a 6-stage differential amplifier having interleaved active feedback. The receiver circuit is mounted on a FR4 PCB and wire-bonded to an equivalent circuit that emulates a photodetector. The measured transimpedance gain and 3-dB bandwidth of our optical receiver circuit is 84 $dB{\Omega}$ and 12 GHz, respectively. 20-Gb/s $2^{31}-1$ electrical pseudo-random bit sequence data are successfully received with the bit-error rate less than $10^{-12}$. The receiver circuit has chip area of $0.5mm{\times}0.44mm$ and it consumes excluding the output buffer 84 mW with 1.2-V supply voltage.

• Current Optics and Photonics
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• v.1 no.5
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• pp.514-524
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• 2017

We proposed an integrated wavelength-selective photodetector based on a grating-assisted contradirectional coupler and a graphene absorption layer for a coarse wavelength division multiplexing (CWDM) communication system. The center wavelength of the absorption spectrum of the proposed device can be tuned simply by changing the period of the grating, and the proposed device structure is suitable to forming a cascaded structure. Therefore, an array of the proposed device of different grating periods can be used for simultaneous wavelength demultiplexing and signal detection in a CWDM communication system. Our theoretical study showed that the designed device with a grating length of $500{\mu}m$ could have an absorption of 95.1%, an insertion loss of 0.2 dB, and a 3 dB bandwidth of 7.5 nm, resulting in a -14 dB crosstalk to adjacent CWDM channels. We believe that the proposed device array can provide a compact and economic solution to receiver implementation in the CWDM system by combining functions of wavelength demultiplexing and signal detection.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.127-127
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• 2010

Owing to many advantages on indirect intersubband absorption from the hole miniband to the electron miniband based on the type-II band alignment in InAs/GaSb strained-layer superlattice (SLS), InAs/GaSb SLS infrared photodetector (SLIP) has emerged as a promising system to realize high-detectivity quantum photodetector operating up to room temperature in the spectral range of mid-infrared (MIR) to far-infrared (FIR). In particular, n-barrier-n (n-B-n) structure designed for blocking the majority-carrier dark current makes it possible for MIR/FIR dual-band SLIP whose photoresponse (PR) band can be exclusively selected by the bias polarity. In this study, we present the MIR and FIR photoresponse (PR) mechanism identified by dual-band PR spectra and photoluminescence (PL) profiles taken from InAs/GaSb SLIP. In the MIR/FIR PR spectra measured by changing bias polarity, each spectrum individually shows a series of distinctive peaks related to the transitions from the hole subbands to the conduction one. The PR mechanism at each polarity is discussed in terms of diffusion current, and a superposition of MIR-PR in the FIR-PR spectrum is explained by tunnelling of electrons activated in MIR-SLS. The effective FIR-PR spectrum decomposed into three curves for HH1, LH1, and HH2 has revealed the edge energies of 120, 170, and 220 meV, respectively, and the temperature variation of the MIR-PR edge energies shows that the temperature behavior of the SLS systems can be approximately expressed by the Varshni empirical equation.

• Journal of Sensor Science and Technology
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• v.31 no.4
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• pp.228-237
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• 2022

Two-dimensional (2D) nanomaterials have demonstrated the potential to replace silicon and compound semiconductors that are conventionally used in photodetectors. These materials are ultrathin and have superior electrical and optoelectronic properties as well as mechanical flexibility. Consequently, they are particularly advantageous for fabricating high-performance photodetectors that can be used for wearable device applications and Internet of Things technology. Although prototype photodetectors based on single microflakes of 2D materials have demonstrated excellent photoresponsivity across the entire optical spectrum, their practical applications are limited due to the difficulties in scaling up the synthesis process while maintaining the optoelectronic performance. In this review, we discuss facile methods to mass-produce 2D material-based photodetectors based on the exfoliation of van der Waals crystals into nanosheet dispersions. We first introduce the liquid-phase exfoliation process, which has been widely investigated for the scalable fabrication of photodetectors. Solution processing techniques to assemble 2D nanosheets into thin films and the optoelectronic performance of the fabricated devices are also presented. We conclude by discussing the limitations associated with liquid-phase exfoliation and the recent advances made due to the development of the electrochemical exfoliation process with molecular intercalants.

• Journal of Institute of Control, Robotics and Systems
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• v.6 no.6
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• pp.447-453
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• 2000

Using the scattering theory of laser light, we analyze the particle sizing method. The scattered profile measured by the photodetector is sampled, scale conditioned by a 32 channel analog-to-digital converter, and is analyzed with the transform matrix from the light energy signals to the weights of the particle sizes. The particle size distribution is classified using the Hopfield neural network method as well as the conventional nonnegative least square method.

• Proceedings of the KIEE Conference
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• 2009.07a
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• pp.1223_1224
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• 2009

광센서가 내장된 새로운 수소화된 비정질 실리콘(a-Si:H) 터치 디스플레이를 제시하였다. 16 인치 AMLCD의 모델을 구현하여 터치 패널을 성공적으로 작동시켰다. 본 시스템은 입력된 이미지로부터 실시간으로 정보를 추출해야 하는 복잡한 기존의 방식을 사용하지 않으면서 터치 포인트의 위치를 제공한다. 이 시스템의 간단한 구조를 통하여 대면적 터치 패널 디스플레이를 구현할 수 있다.

• Journal of the Korean Institute of Telematics and Electronics
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• v.25 no.1
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• pp.94-100
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• 1988

To improve the switching time of active optical bistable devices, we propose an active optical bistable device that consists of a diode laser, a transistor, and a photodetector. By implementing the proposed device we realize the optical bistable device with a 5 nanosecond switching time. This is the fastest switching time among the hybrid type optical bistable devices. It is also experimentally demonstrated that the proposed device may be used in an optical disc pick up.

• The Bulletin of The Korean Astronomical Society
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• v.37 no.1
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• pp.81.1-81.1
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• 2012

Herschel Key Program 중의 하나인 "Dust, Ice and Gas In Time (DIGIT)"의 관측 및 분석결과를 발표하고자 한다. 특히 DIGIT 천체들 중 Photodetector Array Camera and Spectrometer (PACS)로 관측된 별생성 초기 단계에 있는 embedded objects들의 FIR SED와 CO, $H_2O$, OH, [OI], [CII]의 FIR 천이선들의 공간분포와 생성기작을 분석한다. 뿐만 아니라, 원시성의 특성들($L_{bol}$과 $T_{bol}$)과 이들 각 분자/원자선에 의한 냉각률의 관계를 통계적으로 분석한 결과를 제시한다.

• Journal of the Korean Society for Precision Engineering
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• v.26 no.11
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• pp.12-19
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• 2009

• 제어로봇시스템학회:학술대회논문집
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• 1992.10a
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• pp.81-85
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• 1992

We design a multi-element photo-detector to measure the size of particles using the diffracted light energy distribution. The scattered profile measured by the photodetector is sampled by a 32 channel analog-to-digital converter. A nonnegative least squares analysis translates the light energy distribution into the corresponding unique particle size distribution. The responses of the particle sizing system are studied theoretically and experimentally.