• Proceedings of the KIEE Conference
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• 1987.07a
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• pp.501-504
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• 1987

The photoconductor is made of evaporated amorphous selenium as the base material, doped with arsenic and tellurium to prevent crystallization and to increase the red sensitivity of the amorphous selenium. The four-layered photoconductor of Se-As-Te has good photosensitivity(r=0.9) and high dark resistivity($P_d=10^{12}{\Omega}{\cdot}cm$). therefore, this four-layered photoconductor can be used for the target of color image pick-up tube.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.11a
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• pp.427-430
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• 2003

The properties of digital X-ray detectors depend on the absorption extent of X-rays, the generated signal of each X-ray photon and the distribution of the generated signal between pixels. In digital X-ray detector with single layer, signal is generated by X-ray photon captured in photoconductor. In X-ray detector with multi structure that scintillator formed above the top of photoconductor, signal is generated both by X-ray photon captured each in scintillator and photoconductor. X-ray detector with multi structure is generated more signal than single layer detector. In this paper, we simulated absorption fraction of X-ray detector with multi-layer using Monte Carlo program. The results compared with single-layer detector to be formed scinillator or photoconductor.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.72-72
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• 2009

본 연구에서는 Photoconductor materials 기반의 평판형 X-ray Detector film 제작에 관한 연구를 수행하였다. 기존의 광도전성 물질로 사용되어 오던 비정질 셀레늄(Amorphous seleinum; a-Se) 기반의 디지털 방사선 검출기 보다 높은 신호 및 동작 특성을 가지는 Mercury Iodide(HgI2)와 열적, 전기적 특성이 안정적이며, 소자의 동작특성이 우수한 Lead Oxide(PbO) 기반의 X-ray Detector film의 개발에 있어서 각각 HgI2 및 PbO 두 물질 층을 적정비율에 맞추어 제작함으로써 최적의 X-ray Detector를 구현하고자 하였다. 이는 빠른 영상획득을 통해 기존의 방식이 가지는 문제점을 해결하고 의료기기 디지털화를 구현할 수 있는 차세대 시스템을 개발하고자 하는 것이다. 본 연구에서는 기존의 진공증착법의 두꺼운 대면적 필름의 제조가 어려운 문제점을 해결하고자 Particle In Binder method(PIB) 방법을 이용하여 $3"{\times}3"$사이즈의 두께 $200{\mu}m$의 다결정의 Photoconductor 필름을 제조하여 전기적 특성을 평가하였다. 제작된 필름의 전기적 특성을 dark current, X-선 sensitivity와 SNR(Signal to -Noise Rate) 등을 측정하여 정량적으로 평가 하였다. 기준 실험으로 진행한 DG 2.1 바인더를 사용한 single-HgI2 층에서 보다 높은 sensitivity 값을 보였지만 높은 dark current로 인해 SNR이 떨어지는 결과를 볼 수 있었다. 본 연구에서 제시하는 두 Photoconductor material의 Soaking method를 이용한 실험에서는 single-HgI2에 해당하는 높은 sensitivity 및 저감된 dark current로 인해 높은 SNR 값을 획득하였다. 하지만 습도와 같은 주변 환경에 의한 재현성 문제로 인한 신호값의 불안정성에 대한 문제점도 남아 있으므로, 차후 최적화된 material 제작 공정을 위한 연구가 꾸준히 진행 되어져야 할 것이다.

• Polymer(Korea)
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• v.25 no.5
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• pp.719-727
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• 2001

Recently it was found that the charge carrier transport properties are significantly enhanced due to effective intermolecular $\pi$-orbital overlapping and low disorder of hopping sites caused by self-organization of liquid crystal molecules. In this study, the xerographic properties of a double-layer photoconductor doped with nematic liquid crystal, 4-pentyl-4'-cyanoterphenyl (5CT), as a charge-carrier transport material to enhance the charge-tarrier mobility were investigated. From the results of measured surface voltage properties for the photoconductor doped with various concentrations of liquid crystal, 5CT, the initial voltage was found to increase with the concentration of 5CT and the dark decay decreased with the concentration of 5CT. The highest sensitivity was obtained at a specific concentration, 40wt% 5CT. The fluorescence behavior of the carrier transport layer (CTL) was also investigated. It was found that the charge-carrier transport properties of the organic photoconductor depend on the charge-carrier transport properties of the complex. The TNF : 5CT (40 wt%) and OXD : 5CT (40 wt%)samples showed the highest sensitivity because the greatest charge transport complex was termed between the charge-carrier transport materials in these samples.

• Korean Journal of Materials Research
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• v.9 no.5
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• pp.473-477
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• 1999

Xerographic properties of double-layer photoconductor doped with 4-butyl-4'-methoxyazobenzene (BMAB) as charge-carrier transport material were investigated. BMAB can undergo reversible trans-cis isomerization by light with appropriate wavelength. In the results of measured surface voltage properties for photoconductor doped with BMAB, TNF: BMAB(4-wt%) sample with trans form showed the lowest dark decay, the lowest residual voltage, and the highest sensitivity among cis form. The trans isomer of BMAB has ordering orientation because the molecule possesses a rodlike shape, while the cis isomer has random orientation due to its bent shape. Therefore the molecular arrangement of trans form enhanced charge-carrier transport mobility.

• Journal of the Korean Society of Radiology
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• v.9 no.2
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• pp.67-72
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• 2015

In diagnostic radiology, the use of automatic exposure control device is internationally recommended for diagnosis and optimization. However, if exposed to prolonged radiation is a complicated manufacturing process, there is a problem that occurs decrease of various performance overall brightness sensor, which is commercially available conventional. Therefore, in this study, absorption of X-ray is high, and I want to evaluate the AEC applicability of the sensor of the photoconductor-based production has an easy advantage. Experimental results confirms the possibility of fabrication of the sensor through an increase in the SNR, with the detection efficiency superior, accurate turn-off. In addition, it is confirmed that the experimental results of the transmittance and the latent image, Ghost effect by the light conductor does not appear, in the case of a photoconductor with the exception of the PbO, 80% - and it was confirmed good transmittance of 90%. Therefore, excellent mechanical stability and poor performance due to a change of the doping concentration than the existing products that have been put to practical use, the sensor easy photoconductor based, fabrication and can be applied as AEC sensor is expected.

• Journal of the Korean Graphic Arts Communication Society
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• v.12 no.1
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• pp.107-131
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• 1994

• Journal of Sensor Science and Technology
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• v.13 no.4
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• pp.277-281
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• 2004

$Hg_{1-x}Cd_{x}Te$ (MCT) was grown by hot wall epitaxy. Prior to the MCT growth, the CdTe (111) buffer layer was grown on the GaAs substrate at the temperature of $590^{\circ}C$ for 15 min. When the thickness of the CdTe buffer layer was $5{\mu}m$ or thicker, the full width at half maximum values obtained from the x-ray rocking curves were found to significantly decrease. After a good quality CdTe buffer layer was grown, the MCT epilayers were grown on the CdTe (111)/GaAs substrate at various temperatures in situ. The crystal quality for those epilayers was investigated by means of the x-ray rocking curves and the photocurrent experiment. The photoconductor characterization for the epilayers was also measured. The energy band gap of MCT was determined from the photocurrent measurement and the x composition rates from the temperature dependence of the energy band gap were turned out.

• Journal of the Korean Graphic Arts Communication Society
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• v.8 no.1
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• pp.1-20
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• 1990

$\alpha$,$\beta$,$\varepsilon$ type copper phthalocy $\alpha$,$\beta$,$\varepsilon$ type copper phthalocyanine(CuPc) pigment was purified by a simple train sublimation technique. The layered photoconductor was made with $\varepsilon$ type CuPc as a carrier generation layer(CGL) and polyvinly carvazol(PVCz) as a carrier transport layer(CLT). A CGL of CuPc was electrochemical deposited on an Al substrate used as cathode in pigment dispersion solutions. a CTL of PVCz pwas spin coated on $\varepsilon$ type CuPc thin film by a spin coater. The effect of sonication time, electrophotographic property of the layered photoconductor were studied with surface coverage, surface potential and sensitivity.

• Journal of the Korean Graphic Arts Communication Society
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• v.16 no.3
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• pp.43-60
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• 1998

The photosensitive properties and spectroscopic characteristics in the organic photoconductor(OPC) with carrier generation layer(CGL) of poly(vinylbutyral)(PVB) and polycarbonate(PC) doped with titanyl phthalocyanine(TiOPc) were investigated. The change of crystal structure of TiOPc dispersed with PVB and PC was shown by UV-visible reflective spectrum and FT-IR spectrum and mainly caused by the difference of solubility of solvent and the interaction between TiOPc and binder. The particle size of TiOPc dispersed with PVB measured by SEM was smaller than in PC. The crystal structure of TiOPc dispersed with PVB was amorphous type and in PC was $\alpha$type. It was found that the photosensitive properties of OPC were dependent on the change of absorbance and ionization potential of TiOPc occurred from the difference of crystal structure. In this work, the photosensitivity of OPC of TiOPc dispersed with PVB was better than PC due to the crystal type and the smaller particle size.