• Title/Summary/Keyword: photo region

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New Photo-Alignment Materials for LCD as a Non-Rubbing Method.

  • Kumano, Atsushi;Takeuchi, Yasumasa;Nakata, Shoichi;Kimura, Masayuki
    • 한국정보디스플레이학회:학술대회논문집
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    • 2002.08a
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    • pp.953-956
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    • 2002
  • We successfully developed new photo-alignment materials which can be treated with linearly polarized UV (LPUV) light in near UV region. The alignment films were also shown to provide with surface anchoring as strong as that on rubbed polyimide when exposed to the LPUV light with warming up the substrate. It can be also able to control pretilt angle by introduction of alkyl side chain.

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식용작물재배 LED 등기구 모듈개발

  • Song, Yong-Jong;Choe, Hyeon-Ho;Lee, Mun-Ho;Kim, Yeong-Pyo;Lee, Ho-Sik;Song, Min-Jong;Kim, Tae-Wan
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2009.11a
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    • pp.284-284
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    • 2009
  • The LED of cultivation edible plants was compliance the variable of the photo-receptor pigment with the red light source and ultra red light source from long wave region. The mechanism of cultivation edible plants for each part was necessary the wavelength unit which is appropriate, the illuminant source, motor control and lens design of LED light source about plant. The photo-receptor pigment induces for a long daytime recognition, seed germination and anthesis etc, induction years exists in the state which is an inactivity within the cells and in compliance with the red light source to be converted in active

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Studies on Fabrication of Diodes and Photo Cell Using BP-Si structure (BP-Si구조를 이용한 다이오드 및 Photo Cell의 제작에 관한 연구)

  • 홍순관;복은경;김철주
    • Journal of the Korean Institute of Telematics and Electronics
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    • v.25 no.7
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    • pp.774-779
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    • 1988
  • The homo and hetero-junction diodes were fabricated using BP-Si structure. After removal of Si substrates, schottky diodes were fabricated on the BP bulk. The electrical properties of the diode were examined through current-voltage characteristics curve. The schottky diode with Sb electrode has a cut-in voltage of 0.33V. This value is almost equal to that of the typical schottky diodes. The breakdown voltage of the schottky diode is 30V. When BP was used for photo cell as a window, the conversion efficiency improved from 6.5% to 8.3%, and optical transmissivity of BP invreased in short wavelength region.

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Easy Detection of Amyloid β-Protein Using Photo-Sensitive Field Effect

  • Kim, Kwan-Soo;Ju, Jong-Il;Song, Ki-Bong
    • Journal of Sensor Science and Technology
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    • v.21 no.5
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    • pp.339-344
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    • 2012
  • This article describes a novel method for the detection of amyloid-${\beta}$($A{\beta}$) peptide that utilizes a photo-sensitive field-effect transistor (p-FET). According to a recent study, $A{\beta}$ protein has been known to play a central role in the pathogenesis of Alzheimer's disease (AD). Accordingly, we investigated the variation of photo current generated from p-FET with and without intracellular magnetic beads conjugated with $A{\beta}$ peptides, which are placed on the p-FET sensing areas. The decrease of photo current was observed due to the presence of the magnetic beads on the channel region. Moreover, a similar characteristic was shown when the Raw 264 cells take in magnetic beads treated with $A{\beta}$ peptide. This means that it is possible to simply detect a certain protein using magnetic beads and a p-FET device. Therefore, in this paper, we suggest that our method could detect tiny amounts of $A{\beta}$ for early diagnosis of AD using the p-FET devices.

Glass strengthening and coloring using PIIID technology

  • Han, Seung-Hee;An, Se-Hoon;Lee, Geun-Hyuk;Jang, Seong-Woo;Whang, Se-Hoon;Yoon, Jung-Hyeon
    • Proceedings of the Korean Vacuum Society Conference
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    • 2016.02a
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    • pp.178-178
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    • 2016
  • Every display is equipped with a cover glass to protect the underneath displaying devices from mechanical and environmental impact during its use. The strengthened glass such as Gorilla glass.$^{TM}$ has been exclusively adopted as a cover glass in many displays. Conventionally, the strengthened glass has been manufactured via ion-exchange process in wet salt bath at high temperature of around $500^{\circ}C$ for hours of treatment time. During ion-exchange process, Na ions with smaller diameter are substituted with larger-diameter K ions, resulting in high compressive stress in near-surface region and making the treated glass very resistant to scratch or impact during its use. In this study, PIIID (plasma immersion ion implantation and deposition) technique was used to implant metal ions into the glass surface for strengthening. In addition, due to the plasmonic effect of the implanted metal ions, the metal-ion implanted glass samples got colored. To implant metal ions, plasma immersion ion implantation technique combined with HiPIMS method was adopted. The HiPIMS pulse voltage of up to 1.4 kV was applied to the 3" magnetron sputtering targets (Cu, Ag, Au, Al). At the same time, the sample stage with glass samples was synchronously pulse-biased via -50 kV high voltage pulse modulator. The frequency and pulse width of 100 Hz and 15 usec, respectively, were used during metal ion implantation. In addition, nitrogen ions were implanted to study the strengthening effect of gas ion implantation. The mechanical and optical properties of implanted glass samples were investigated using micro-hardness tester and UV-Vis spectrometer. The implanted ion distribution and the chemical states along depth was studied with XPS (X-ray photo-electron spectroscopy). A cross-sectional TEM study was also conducted to investigate the nature of implanted metal ions. The ion-implanted glass samples showed increased hardness of ~1.5 times at short implantation times. However, with increasing the implantation time, the surface hardness was decreased due to the accumulation of implantation damage.

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A Study on the Photo-Degradation Properties of the Spiropyran Using THz-TDS (테라헤르츠 시간 영역 분광법을 이용한 스피로파이란의 광 퇴화 특성 연구)

  • Bang, Jin-Hyuk;Park, Myoung-Hwan;Ryu, Han-Cheol
    • Journal of the Korean Chemical Society
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    • v.60 no.1
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    • pp.28-33
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    • 2016
  • The spiropyran is a typical material having photodegradation properties in the process of photochromism. The spiropyran has been utilized in various applications such as optical switch, optical memories, and biosensor because of its remarkable stability, fast responsive time, stronger color change, and photo-induced controllability. However, the spriropyran is photodegraded by the repetitive optical irradiation. The photodegradation of spiropyran have been investigated by using UV-Visible spectroscopy, nuclear magnetic resonance (NMR), and Raman spectroscopy. Herein, the properties of spiropyran were characterized by using terahertz time-domain spectroscopy (THz-TDS) in the terahertz frequency region. In terahertz region, the measured absorbance of spiropyran was increased due to the photodegradation induced by the repetitive UV irradiation. The absorbance tendency of spiropyran in the terahertz frequency region was compared with that in the visible region, and they were completely opposite to each other.

Semiconductor Behavior of Passive Films Formed on Cr with Various Additive Elements

  • Tsuchiya, Hiroaki;Fujimoto, Shinji;Shibata, Toshio
    • Corrosion Science and Technology
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    • v.2 no.1
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    • pp.7-11
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    • 2003
  • Photoelectrochemical response and electrochemical impedance behavior was investigated for passive film formed on sputter-deposited Cr alloy in $0.1kmol{\cdot}m^{-3}$. Photoelectrochemical action spectrum could be separated into two components, which were considered to be derived from $Cr_2O_3$ ($E_g\sim3.6eV$) and $ Cr(OH)_3 $ ($E_g\sim2.5eV$). The band gap energy, $E_g$, of each component was almost constant for various applied potentials. polarization periods and alloying additives. The photoelectrochemical response showed negative photo current for most potentials in the passive region. Therefore, the photo current apparently exhibited p-typesemiconductor behavior. On the other hand, Mort-Schottky plot of the capacitance showed positive slope, which means that passive film formed on Cr alloy has n-type semiconductor property. These apparently conflicting results are rationally explained assuming that the passive film on Cr alloy formed in the acid solution has n-type semiconductor property with a fairly deep donor level in the band gap and forms an accumulation layer in the most of potential region in the passive state.

Studies on the Photo-electrochemical Properties of Ti$O_{2-x}$ Thin Films (Ti$O_{2-x}$ 박막의 광-전기화학적 성질에 관한 연구)

  • Q Won Choi;Chu Hyun Choe;Ki Hyung Chjo;Yong Kook Choi
    • Journal of the Korean Chemical Society
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    • v.29 no.6
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    • pp.582-591
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    • 1985
  • The thin films of Ti$O_{2-x}$, were prepared by vapor oxidation and Ti$O_2$ single crystal was reduced by heating in argon atmosphere. The photo-electrochemical properties of these samples were studied. When the photocurrent was scanned in 1M NaOH electrolyte solution, several peaks were observed in the vicinity of 320nm in the UV-region and in the vicinity of 520nm, 620nm, and 740nm in the visible-region. Contrary to the previous suppositions, those peaks were produced by the second-order lines from the grating monochromator.

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