• 제목/요약/키워드: photo region

검색결과 165건 처리시간 0.031초

New Photo-Alignment Materials for LCD as a Non-Rubbing Method.

  • Kumano, Atsushi;Takeuchi, Yasumasa;Nakata, Shoichi;Kimura, Masayuki
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2002년도 International Meeting on Information Display
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    • pp.953-956
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    • 2002
  • We successfully developed new photo-alignment materials which can be treated with linearly polarized UV (LPUV) light in near UV region. The alignment films were also shown to provide with surface anchoring as strong as that on rubbed polyimide when exposed to the LPUV light with warming up the substrate. It can be also able to control pretilt angle by introduction of alkyl side chain.

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식용작물재배 LED 등기구 모듈개발

  • 송용종;최현호;이문호;김영표;이호식;송민종;김태완
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2009년도 추계학술대회 논문집
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    • pp.284-284
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    • 2009
  • The LED of cultivation edible plants was compliance the variable of the photo-receptor pigment with the red light source and ultra red light source from long wave region. The mechanism of cultivation edible plants for each part was necessary the wavelength unit which is appropriate, the illuminant source, motor control and lens design of LED light source about plant. The photo-receptor pigment induces for a long daytime recognition, seed germination and anthesis etc, induction years exists in the state which is an inactivity within the cells and in compliance with the red light source to be converted in active

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BP-Si구조를 이용한 다이오드 및 Photo Cell의 제작에 관한 연구 (Studies on Fabrication of Diodes and Photo Cell Using BP-Si structure)

  • 홍순관;복은경;김철주
    • 대한전자공학회논문지
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    • 제25권7호
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    • pp.774-779
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    • 1988
  • The homo and hetero-junction diodes were fabricated using BP-Si structure. After removal of Si substrates, schottky diodes were fabricated on the BP bulk. The electrical properties of the diode were examined through current-voltage characteristics curve. The schottky diode with Sb electrode has a cut-in voltage of 0.33V. This value is almost equal to that of the typical schottky diodes. The breakdown voltage of the schottky diode is 30V. When BP was used for photo cell as a window, the conversion efficiency improved from 6.5% to 8.3%, and optical transmissivity of BP invreased in short wavelength region.

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Easy Detection of Amyloid β-Protein Using Photo-Sensitive Field Effect

  • Kim, Kwan-Soo;Ju, Jong-Il;Song, Ki-Bong
    • 센서학회지
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    • 제21권5호
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    • pp.339-344
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    • 2012
  • This article describes a novel method for the detection of amyloid-${\beta}$($A{\beta}$) peptide that utilizes a photo-sensitive field-effect transistor (p-FET). According to a recent study, $A{\beta}$ protein has been known to play a central role in the pathogenesis of Alzheimer's disease (AD). Accordingly, we investigated the variation of photo current generated from p-FET with and without intracellular magnetic beads conjugated with $A{\beta}$ peptides, which are placed on the p-FET sensing areas. The decrease of photo current was observed due to the presence of the magnetic beads on the channel region. Moreover, a similar characteristic was shown when the Raw 264 cells take in magnetic beads treated with $A{\beta}$ peptide. This means that it is possible to simply detect a certain protein using magnetic beads and a p-FET device. Therefore, in this paper, we suggest that our method could detect tiny amounts of $A{\beta}$ for early diagnosis of AD using the p-FET devices.

Glass strengthening and coloring using PIIID technology

  • Han, Seung-Hee;An, Se-Hoon;Lee, Geun-Hyuk;Jang, Seong-Woo;Whang, Se-Hoon;Yoon, Jung-Hyeon
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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    • pp.178-178
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    • 2016
  • Every display is equipped with a cover glass to protect the underneath displaying devices from mechanical and environmental impact during its use. The strengthened glass such as Gorilla glass.$^{TM}$ has been exclusively adopted as a cover glass in many displays. Conventionally, the strengthened glass has been manufactured via ion-exchange process in wet salt bath at high temperature of around $500^{\circ}C$ for hours of treatment time. During ion-exchange process, Na ions with smaller diameter are substituted with larger-diameter K ions, resulting in high compressive stress in near-surface region and making the treated glass very resistant to scratch or impact during its use. In this study, PIIID (plasma immersion ion implantation and deposition) technique was used to implant metal ions into the glass surface for strengthening. In addition, due to the plasmonic effect of the implanted metal ions, the metal-ion implanted glass samples got colored. To implant metal ions, plasma immersion ion implantation technique combined with HiPIMS method was adopted. The HiPIMS pulse voltage of up to 1.4 kV was applied to the 3" magnetron sputtering targets (Cu, Ag, Au, Al). At the same time, the sample stage with glass samples was synchronously pulse-biased via -50 kV high voltage pulse modulator. The frequency and pulse width of 100 Hz and 15 usec, respectively, were used during metal ion implantation. In addition, nitrogen ions were implanted to study the strengthening effect of gas ion implantation. The mechanical and optical properties of implanted glass samples were investigated using micro-hardness tester and UV-Vis spectrometer. The implanted ion distribution and the chemical states along depth was studied with XPS (X-ray photo-electron spectroscopy). A cross-sectional TEM study was also conducted to investigate the nature of implanted metal ions. The ion-implanted glass samples showed increased hardness of ~1.5 times at short implantation times. However, with increasing the implantation time, the surface hardness was decreased due to the accumulation of implantation damage.

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테라헤르츠 시간 영역 분광법을 이용한 스피로파이란의 광 퇴화 특성 연구 (A Study on the Photo-Degradation Properties of the Spiropyran Using THz-TDS)

  • 방진혁;박명환;류한철
    • 대한화학회지
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    • 제60권1호
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    • pp.28-33
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    • 2016
  • 스피로파이란은 반복적인 광 변색현상 과정에서 광 퇴화 특성을 보이는 대표적인 물질이다. 스피로파이란은 뛰어난 안정성, 빠른 응답속도, 강한 색 변화, 빛에 의한 물질의 화학적, 물리적 특성 조절이 가능하다는 점으로 광 스위치, 광 메모리, 바이오 센서 등의 다양한 분야에 적용되고 있다. 하지만 스피로파이란은 광 퇴화되며 기능이 점차 떨어지기 때문에, 광퇴화에 따른 스피로파이란의 특성 변화에 대해 자외선-가시광선 분광법, 핵 자기 공명 분광법, 라만 분광법 등을 이용한 많은 연구가 이루어지고 있다. 본 연구에서는 스피로파이란의 광 퇴화 특성을 테라헤르츠 주파수 영역에서 테라헤르츠 시간 영역 분광법(Terahertz time-domain spectroscopy, THz-TDS)을 이용하여 측정 및 분석하였다. 반복적인 자외선 조사에 따른 스피로파이란의 광 퇴화 특성이 테라헤르츠 영역에서의 흡수량 증가로 나타남을 확인하였다. 이러한 스피로파이란의 광 퇴화 특성이 야기하는 테라헤르츠 영역 흡수량 변화 경향은 가시광선 영역 흡수량 변화 경향과 서로 반대됨을 확인할 수 있었다.

Semiconductor Behavior of Passive Films Formed on Cr with Various Additive Elements

  • Tsuchiya, Hiroaki;Fujimoto, Shinji;Shibata, Toshio
    • Corrosion Science and Technology
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    • 제2권1호
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    • pp.7-11
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    • 2003
  • Photoelectrochemical response and electrochemical impedance behavior was investigated for passive film formed on sputter-deposited Cr alloy in $0.1kmol{\cdot}m^{-3}$. Photoelectrochemical action spectrum could be separated into two components, which were considered to be derived from $Cr_2O_3$ ($E_g\sim3.6eV$) and $ Cr(OH)_3 $ ($E_g\sim2.5eV$). The band gap energy, $E_g$, of each component was almost constant for various applied potentials. polarization periods and alloying additives. The photoelectrochemical response showed negative photo current for most potentials in the passive region. Therefore, the photo current apparently exhibited p-typesemiconductor behavior. On the other hand, Mort-Schottky plot of the capacitance showed positive slope, which means that passive film formed on Cr alloy has n-type semiconductor property. These apparently conflicting results are rationally explained assuming that the passive film on Cr alloy formed in the acid solution has n-type semiconductor property with a fairly deep donor level in the band gap and forms an accumulation layer in the most of potential region in the passive state.

Ti$O_{2-x}$ 박막의 광-전기화학적 성질에 관한 연구 (Studies on the Photo-electrochemical Properties of Ti$O_{2-x}$ Thin Films)

  • 최규원;최주현;조기형;최용국
    • 대한화학회지
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    • 제29권6호
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    • pp.582-591
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    • 1985
  • 티타늄 금속판을 수증기 산화하여 만든 Ti$O_{2-x}$ 박막과 Ti$O_2$ 단결정을 알곤기체속에서 환원한 시료를 사용하여 이들의 광전기화학적 성질을 연구하였다. 1M NaOH전해질 용액에서 Ti$O_{2-x}$ 전극에 200~800nm 사이의 광을 조사하였을 때 자외부 영역에서는 320nm에서, 가시부 영역에서는 520nm, 620nm 그리고 740nm에서 전류의 peak가 나타났다. 이미 보고된 것과는 대조적으로 가시부 영역의 이들 peak는 grating monochromator의 2차선의 영향에 의하여 나타난 것임이 밝혀졌다.

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