• 한국세라믹학회지
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• 제37권7호
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• pp.726-729
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• 2000

The entitled report revealed that ZnO phosphor samples treated at different temperatures under a given reduction atmosphere show the radiation brightness increase with increase of temperature up to about 900$^{\circ}C$ but become decreasing beyond the temperature. The brightness deterioration with curing temperature at higher temperatures was explained by the decrease of excess zinc ions resulted from their evaporation. The comments will open possibility for different discussions on the experimental result by introducing numerical relationships between the concentration of the native defects and the curing condition.

• 한국전기전자재료학회논문지
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• 제15권3호
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• pp.258-263
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• 2002

We present a new toed phosphor, $Gd_{2-x-y}Li_xEu_yO_3$ with superior luminescent Properties compared to the commercially available red phosphor $Y_2O_3:Eu^{3+}$. The phosphor, with a diameter of about $2\mu\textrm{m}$, consists of the psedospherical particles in a regular array. The photoluminescence measurements as a function of the laser power and the Eu mole fraction were performed at zoom temperature The luminescence intensity linearly increases as both the laser power and the Eu mole fraction Increase. As for the dependence on cathodoluminescence, the incorporation of Eu and Li ions into $Gd_2O_3$ lattice brings about an increase in luminescent efficiency. The highest emission intensity for the phosphor occurs at the applied voltage of 500 V, its value is larger than that of $Y_2O_3:Eu^{3+}$ powder by 70%.

• 자원리싸이클링
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• 제16권5호
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• pp.46-50
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• 2007

[ $Eu^{2+},\;Nd^{3+}$ ]로 도핑된 $CaAl_2O_4$ 청색 형광체를 고상반응법으로 제조하였다. 1 mol% $Eu^{2+}$로 doping된 형광체에 다양한 조성의 $Nd^{3+}$를 co-doping함에 따라 고휘도, 장잔광 특성을 보였다. 제조한 형광체에 대하여 XRD, SEM, TEM, 빛발광 특성을 조사하였다. $CaAl_2O_4:Eu^{2+}:Nd^{3+}$의 넓은 밴드의 UV로 여기된 빛발광 특성이 $Eu^{2+}$의 $4f^65d^1$에서 $4f^7$ 상태로 천이에 의해 기인된 청색영역(${\lambda}_{max}=440\;nm$)에서 관찰되었다. $Nd^{3+}$로 co-doping한 형광체는 여기광을 차단하였을 때 장잔광 발광 특성을 나타내었다.

• 한국분말재료학회지
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• 제27권2호
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• pp.146-153
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• 2020

The co-doping effect of aliovalent metal ions such as Mg²⁺, Ca²⁺, Sr²⁺, Ba²⁺, and Zn²⁺ on the photoluminescence of the Y₂O₃:Eu³⁺ red phosphor, prepared by spray pyrolysis, is analyzed. Mg²⁺ metal doping is found to be helpful for enhancing the luminescence of Y₂O₃:Eu³⁺. When comparing the luminescence intensity at the optimum doping level of each Mg²⁺ ion, the emission enhancement shows the order of Zn²⁺ ≈ Ba²⁺ > Ca²⁺ > Sr³⁺ > Mg²⁺. The highest emission occurs when doping approximately 1.3% Zn²⁺, which is approximately 127% of the luminescence intensity of pure Y₂O₃:Eu³⁺. The highest emission was about 127% of the luminescence intensity of pure Y₂O₃:Eu³⁺ when doping about 1.3% Zn²⁺. It is determined that the reason (Y, M)₂O₃:Eu³⁺ has improved luminescence compared to that of Y₂O₃:Eu³⁺ is because the crystallinity of the matrix is improved and the non-luminous defects are reduced, even though local lattice strain is formed by the doping of aliovalent metal. Further improvement of the luminescence is achieved while reducing the particle size by using Li₂CO₃ as a flux with organic additives.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2005년도 International Meeting on Information Displayvol.II
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• pp.1576-1579
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• 2005

With varying rapid thermal annealing (RTA) temperature, luminescence properties of $Zn_{0.75}Mg_{0.25}S:Mn$ thin film deposited by RF-magnetron sputtering technique were investigated. In this study, $Zn_{0.75}Mg_{0.25}S:Mn$ thin film phosphor showed more red emission than those of the previous studies when annealed around 600 or $650^{\circ}C$. Although all samples were deposited from identical source composition, a main peak wavelength of photoluminescence spectra of $Zn_{0.75}Mg_{0.25}S:Mn$ shifted toward shorter wavelengths depending upon increase of RTA temperature. The same dependence of wavelength on RTA temperature was also observed in cathodoluminescence as well as electroluminescence measurements. It was revealed that the change of the luminescence properties were originated from structural changes in $Zn_{0.75}Mg_{0.25}S:Mn$ thin film phosphor from cubic to hexagonal phases analyze using conventional X-ray pole figure mapping. The phase transition would be the origin of luminescence property changes with respect to RTA temperature.

• 한국세라믹학회지
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• 제43권5호
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• pp.304-308
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• 2006

We have synthesized a $Eu^{2+}-activated\;Sr_3MgSi_2O_8$ blue phosphor and $(Sr,Ba)_2SiO_4$ yellow phosphor and prepared white LEDs by combining these phosphors with a InGaN UV LED chip. Three distinct emission bands from the InGaN-based LED and the two phosphors are clearly observed at 405 nm, 460 nm and at around 560 nm, respectively. The 405 nm emission band is due to a radiative recombination from a InGaN active layer. This blue emission was used as an optical transition of the $Sr_3MgSi_2O_8:Eu$ blue phosphor and $(Sr,Ba)_2SiO_4:Eu$ yellow phosphor. The 460 nm and 560 nm emission band is ascribed to a radiative recombination of $Eu^{2+}$ impurity ions in the $Sr_3MgSi_2O_8:Eu$ and $(Sr,Ba)_2SiO_4$ host matrix. As a consequence of a preparation of UV White LED lamp using the $Sr_3MgSi_2O_8:Eu$ blue phosphor and $(Sr,Ba)_2SiO_4:Eu$ yellow phosphor, the highest luminescence efficiency was obtained at the ration of epoxy/two phosphor (1/0.2361). At this time, the CIE chromaticity was CIE x = 0.3140, CIE y = 0.3201 and CCT (6500 K).

• 한국반도체및디스플레이장비학회:학술대회논문집
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• 한국반도체및디스플레이장비학회 2006년도 추계학술대회 발표 논문집
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• pp.22-25
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• 2006

Long lasting phosphor materials are in great demand for their applications in the area of light emitting diodes (LEDs), commercial displays and warning signals. After glow longevity, brightness, photo-resistance and chemical and environment stability are most important qualities that are desired for these materials. Alumina as host lattice with various rare earth elements has been found to be good at the same time inexpensive material for the synthesis of the phosphor materials. This communication explored the effect of mixed rare earth metal on the luminescence properties of these materials for the first time. Various permutations and combinations of $Sr^{2+}$ and $Ba^{2+}$ have been investigated in order to achieve robust and high luminescence characteristics in the tailored phosphor materials.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2003년도 International Meeting on Information Display
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• pp.1009-1012
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• 2003

A novel powder processing technique for the preparation of copper activated zinc sulfide (ZnS:Cu,Al) phosphor by combustion process has been proposed. Exothermic reaction between dissolved copper nitrate and carbohydrazide give small-sized particles in presence of alkali metal halides at lower temperature than the traditional method of preparation. This new route takes less than five minutes and requires much less energy. The optical and luminescence characteristics of ZnS:Cu,Al phosphor thus prepared were found to be enhanced significantly. Carbohydrazide acted as fuel at $500^{\circ}C$ with rapid heating and then the phosphors obtained were heated at $900^{\circ}C$ in an inert atmosphere for 3hrs to get better luminescent properties.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2003년도 International Meeting on Information Display
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• pp.1030-1033
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• 2003

ZnS:Mn has been studied as a yellow phosphor for the application to fluorescent displays operated at low voltage. It was found that luminescence of $Mn^{2+}$ ion from hexagonal phase of ZnS was suitable for the display applications. The main emission peak was shifted to shorter wavelength when Cu ions were doped. The luminescence color of ZnS:Mn phosphor could be changed with decrease of its brightness.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 춘계학술대회 논문집 디스플레이 광소자분야
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• pp.102-105
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• 2004

With varying rapid thermal annealing (RTA) temperature, luminescent properties of ZnMgS:Mn thin film sputter-deposited with one target were measured. Although all samples have the same composition, $Zn_{1-x}Mg_xS:Mn$ (x=0.25) can emit luminescence between 580 and 614 nm, which is controlled by only RTA temperature. It is understood that the energy band gap shift of ZnMgS:Mn thin film phosphor occurs with varying RTA temperature.