• Transactions on Electrical and Electronic Materials
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• 제12권1호
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• pp.11-15
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• 2011

In this study, $ZnGa_2O_4$ phosphors in its application to field emission displays and electroluminescence were synthesized through the precipitation method and $Mn^{2+}$ ions. A green luminescence activator, $Cr^{3+}$ ions, and a red luminescence activator were separately doped into $ZnGa_2O_4$, which was then screen printed to an indium tin oxide substrate. The thick films of the $ZnGa_2O_4$ were deposited with the various thicknesses using nano-sized powder. The best luminescence characteristics were shown at a thickness of 60 ${\mu}m$. Additionally, green-emission $ZnGa_2O_4:Mn^{2+}$ and red-emission $ZnGa_2O_4:Cr^{3+}$ phosphor thick films, which have superior characteristics, were manufactured through the screen-printing method. These results indicate that $ZnGa_2O_4$ phosphors prepared through the precipitation method have wide application as phosphor of the full color emission.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2007년도 7th International Meeting on Information Display 제7권2호
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• pp.1547-1550
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• 2007

$YVO_4:Eu^{3+}$ thin film phosphor samples have been deposited by using RF magnetron sputter deposition technique with various deposition temperatures. The Effect of deposition temperature (room temperature to $450\;^{\circ}C$) on morphological, crystal structure, and luminescence properties of $YVO_4:Eu^{3+}$ thin film phosphor has also been investigated. As the deposition temperature increases, the size of crystal grain and surface roughness of thin film increases principally and its crystallinity also increases. It is found that the asdeposited $YVO_4:Eu^{3+}$ thin film excited either photon or electron shows typical luminescence spectra successfully. CIE color coordinates of $YVO_4:Eu^{3+}$ thin film phosphor with increasing deposition temperature moved towards more reddish region.

• Journal of the Optical Society of Korea
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• 제18권1호
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• pp.45-49
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• 2014

Well-crystallized $BaSi_2O_5:Eu^{2+}$ phosphor films were synthesized by heat treatment of spin-coated BaO:Eu on $SiO_2$ glass. We investigated luminescence-structure properties of these phosphor films as a function of heat-treatment temperature. From x-ray diffraction patterns, our $BaSi_2O_5:Eu^{2+}$ phosphor films revealed that (111)- and (204)-crystal planes of $BaSi_2O_5$ crystal were dominantly increased with an increase of heat-treatment temperature. Photoluminescence intensities of $BaSi_2O_5:Eu^{2+}$ phosphor films were increased with amount of these crystal planes. It can be explained that $Eu^{2+}$ ions were stably occupied at specific crystal orientation of $BaSi_2O_5$ crystal, enhancing the luminescent intensities of $BaSi_2O_5:Eu^{2+}$ phosphor films. In addition, our $BaSi_2O_5:Eu^{2+}$ phosphor films had transmittance of 70% at 510 nm,.due to the dense morphology and specific crystallinity of $BaSi_2O_5:Eu^{2+}$ phosphor films.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2004년도 Asia Display / IMID 04
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• pp.640-643
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• 2004

We have synthesized SrS:Eu red phosphor by solid state method and investigated to adopt a red phosphor for LEDs. The SrS:Eu phosphor shows broad emission band at 600nm region due to f-d energy transfer of $Eu^{2{\cdot}}$. Our results show that the SrS:Eu red phosphor exhibits the better luminescence efficiency than that of the industrially available product SrS:Eu phosphor.

• 한국반도체및디스플레이장비학회:학술대회논문집
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• 한국반도체및디스플레이장비학회 2007년도 춘계학술대회
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• pp.188-192
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• 2007

High brightness and long persistent luminescence phosphor $CaAl_2O_4:Eu^{2+}$ was prepared with varying $Eu^{2+}$ concentration by solid state reaction technique. Synthesized materials were investigated by powder X-ray diffractometer (XRD), SEM, TEM, photoluminescence excitation and emission spectra. Broad band UV excited luminescence of the $CaAl_2O_4:Eu^{2+}$ was observed in the blue region (${\lambda}_{max}\;=\;440\;nm$) due to transitions from the $4f^65d^1$ to the $4f^7$ configuration of the $Eu^{2+}$ ion. The decay time of the persistence indicated that the persistent luminescence phosphor has bright phosphorescence and maintains a long duration. These materials have great potential for outdoor night time displays.

• 한국응용과학기술학회지
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• 제23권3호
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• pp.207-214
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• 2006

$Y_{2-x}Gd_xO_3:Eu$, phosphors for plasma display panel(PDP), were prepared by Pechini method which use yttriun chloride, gadolinium chloride, and europium oxide as starting materials. This method is a different way to the synthesis of europium(Eu)-doped phosphors, and it consists of the formation of a polymeric resin obtained by polyesterification between metal chelate compounds and a polyfunctional alcohol. This needs lower temperature than solid-state synthetic method. The prepared $Y_{2-x}Gd_xO_3:Eu$ phosphor particles had spherical shape and coherence. The luminescence intensity of $Y_{2-x}Gd_xO_3:Eu$ phosphor particles increased according to the increase of gadolinium(Gd) content(to 0.8mol%), and $Y_{1.2}Gd_{0.8}O_3:Eu$ phosphors had the highest luminescence intensity under vacuum ultra violet(VUV) excitation. The optimum concentration of Eu in the phosphor and optimum calcination temperature was 3wt% and $1100^{\circ}C$. The prepared phosphors were consist of particle, and its size was between 100nm and 150nm. Among the different polyfunctional alcohols, diethylene glycol(DEG) improved the luminescence intensities of phosphors more than other additives. The Pechini method proved that it is demonstrated to be suitable for the synthesis of phosphors used in PDP.

• 한국전기전자재료학회논문지
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• 제19권8호
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• pp.749-753
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• 2006

The $ZnGa_2O_4$ phosphor thick films were fabricated using a screen printing method on Si(100) substrates at various sintering temperatures. The XRD patterns show that the $ZnGa_2O_4$ thick films have a (311) main peak and a spinel structure with increasing sintering temperatures. The particle sizes of $ZnGa_2O_4$ phosphor were about 100 nm and the thickness of $ZnGa_2O_4$ thick film was $10{\mu}m$. The CL and PL properties of $ZnGa_2O_4$ showed main peak of 420nm and maximum intensity at the sintering temperature of $900^{\circ}C$. These results indicate that $ZnGa_2O_4$ phosphor thick films hold promise for displays such as plasma display panel and field emission display.

• 한국결정성장학회지
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• 제23권3호
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• pp.142-145
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• 2013

The upconversion (UC) luminescence of $Li^+/Er^{3+}/Yb^{3+}$ co-doped $CaWO_4$ phosphors and effects of $Yb^{3+}$ concentration are investigated in detail. Single crystallized $CaWO_4$ : $Li^+/Er^{3+}/Yb^{3+}$ phosphor can be obtained, co-doped up to 35.0/5.0/30.0 mol% ($Li^+/Er^{3+}/Yb^{3+}$) by solid-state reaction. Under 980 nm excitation, $CaWO_4$ : $Li^+/Er^{3+}/Yb^{3+}$ phosphor exhibited strong green UC emissions visible to the naked eye at 530 and 550 nm induced by the intra 4f transitions of $Er^{3+}$ ($^4H_{11/2}$, $^4S_{3/2}{\rightarrow}^4I_{15/2}$). The optimum doping concentrations of $Yb^{3+}$ that would result in the highest UC luminescence were determined, and a possible UC mechanism that depends on the pumping power is discussed in detail.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 춘계학술대회 논문집 디스플레이 광소자분야
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• pp.155-159
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• 2003

The preparation and luminescence characterization of yttrium oxide doped with trivalent europium phosphors by sol-gel method have been investigated. Aqueous metal nitrate solution was mixed with EDTA which was chosen by the most suitable material of sol-gel formation one of appled various chelating agents. we noticed that the samples when are heated with EDTA at a temperature of $100^{\circ}C$ for 1hrs, produced brownish and crisp powders due to condensation reaction on decomposition, dehydration and formation of sol-gel. Hence, when the powder pre-heated was then heated at $1200^{\circ}C$ for 3hrs in atmosphere, the luminescence characterization of resultant $Y_{2}O_{3}:Eu^{3+}$ phosphor was enhanced upto maximum 30% significantly than conventional method through increasing porous region and decreasing particle sizes.

• 한국세라믹학회지
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• 제41권5호
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• pp.406-409
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• 2004

교류 구동 분산형 EL(ACPEL)에 사용되는 ZnS:Cu 청색 형광체를 고상 반응법으로 제조하였다. 1차 소성 후 인위적 결함을 형광체 표면에 도입함으로서 2차 소성 중에 의해 일어나는 ZnS의 상전이 및 EL 발광 휘도에 미치는 영향을 연구하였다. 즉 1차 소성된 형광체를 ball-mill 공정에서 인위적으로 표면에 defect를 형성시켜 ZnS의 저온상인 cubic으로의 전이가 용이하게 하여 EL구동하에서 발광 휘도를 증가시켰다. Ball-mill의 공정 변수로는 milling 시간과 rpm 등을 고려하여 각 조건에 따른 효과를 고찰하였으며, 발광 spectrum을 측정한 결과, 최적 조건에서 인위적인 결함을 형성하지 않은 형광체 보다 발광 휘도가 약 30% 이상 증가하였다. 또한 각기 다른 ball-mill 조건으로 합성된 형광체의 결정상을 분석하고 비교하였으며 상전이 특성에 따른 발광 휘도 변화를 고찰하였다.