• Title/Summary/Keyword: phase-shift

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The Implementation of Digital Neural Network with identical Learning and Testing Phase (학습과 시험과정 일체형 신경회로망의 하드웨어 구현)

  • 박인정;이천우
    • Journal of the Korean Institute of Telematics and Electronics C
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    • v.36C no.4
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    • pp.78-86
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    • 1999
  • In this paper, a distributed arithmetic digital neural network with learning and testing phase implemented in a body has been studied. The proposed technique is based on the two facts; one is that the weighting coefficients adjusted will be stored in registers without shift, because input values or input patterns are not changed while learning and the other is that the input patterns stored in registers are not changed while testing. The proposed digital neural network is simulated by hardware description language such as VHDL and verified the performance that the neural network was applied to the recognition of seven-segment. To verify proposed neural networks, we compared the learning process of modified perceptron learning algorithm simulated by software with VHDL for 7-segment number recognizer. The results are as follows: There was a little difference in learning time and iteration numbers according to the input pattern, but generally the iteration numbers are 1000 to 10000 and the learning time is 4 to 200$\mu\textrm{s}$. So we knew that the operation of the neural network is learned in the same way with the learning of software simulation, and the proposed neural networks are properly operated. And also the implemented neural network can be built with less amounts of components compared with board system neural network.

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Material Retention: A Novel Approach to Performance of Pigment Coating Colors (물질 보류 : 안료 코팅 처리를 위한 새로운 시도)

  • McKenzie, Ken;Rutanen, Anne;Lehtovuori, Jukka;Ahtikari, Jaana;Piilola, Teuvo
    • Proceedings of the Korea Technical Association of the Pulp and Paper Industry Conference
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    • 2008.05a
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    • pp.47-70
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    • 2008
  • Cost efficiency is today the primary requirement in the paper and board industry. This has led therefore, to a greater preponderance of products with specifically designed functionality to take account of current industry needs. Continually increasing machine coating speeds together with these new coating colour components have put more emphasis on the importance of the correct rheology and water retention of the coating colours to achieve good runnability and end product quality. In the coating process, some penetration of the aqueous phase, to the base paper or board must occur to anchor the pre-coating to the base or the topcoat to the pre-coat. The aqueous phase acts as a vehicle not only for the binder, but also for the other components. If this water or material penetration is not controlled, there will be excessive material shift from the coating colour to the base, before immobilization of the coating colour will stop this migration. This can result in poor machine runnability, unstable system and uneven coating layer, impacting print quality. The performance of rheology modifiers or thickeners on the coating color have tended to be evaluated by the term, "water retention". This simple term is not sufficient to explain their performance changes during coating. In this paper we are introducing a new concept of "material retention", which takes note of the total composition of the coating colour material and therefore goes beyond the concept of only water retention. Controlled material retention leads to a more uniform z-directional distribution of coating colour components. The changes that can be made to z-directional uniformity will have positive effects on print quality as measured by surface strength, ink setting properties, print gloss, mottling tendency. Optical properties, such as light scattering, whiteness and light fastness delivery should also be improved. Additionally, controlled material retention minimizes changes to the coating colour with time in re-circulation giving less fluctuation in quality in the machine direction since it more closely resembles fresh coating for longer periods. Use of the material retention concept enables paper and board producers to have more stable runnability (i.e. lower process costs), improved end product quality (i.e. better performance of used chemicals) and/or optimized use of coating colour components (i.e. lower total formulation cost)

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Structural and Microwave Dielectric Properties of $La(Mg_{1/2}Ti_{1/2})O_3$ Ceramics ($La(Mg_{1/2}Ti_{1/2})O_3$ 세라믹스의 구조 및 고주파 유전 특성 연구)

  • Yeo, Jae-Hyun;Baek, Jong-Hu;Nham, Sahn;Lee, Hwack-Joo;Park, Hyun-Min;Byun, Jae-Dong
    • Korean Journal of Materials Research
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    • v.9 no.9
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    • pp.943-947
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    • 1999
  • The crystal structure and the microwave dielectric properties of $La(Mg_{1/2}Ti_{1/2})O_3$ ceramics have been investigated. $La(Mg_{1/2}Ti_{1/2})O_3$ has the 1:1 ordered monoclinic structure with the lattice parameters of $a = 5.5467(3){\AA}, b = 5.5616(3){\AA}, c = 7.8426(5) {\AA} and \beta = 89.9589 (2)^{\circ}$ The spacegroup of LMT is $P2_1/n$. Monoclinic LMT has the in­phase and anti-phase tilting of octahedra with the $a^_a^_c^_$ tilting system. Anti-parallel shift of A-site cations was also found in LMT. The relative density of the specimens sintered above $1600^{\circ}C$ was ranged between 95 % and 96 % of the theoretical density and the dielectric constant of specimens was about 28. The highest $Q\timesf$ achieved in this investigation was 63,100 for the specimen sintered at $1630^{\circ}C$ for 5 hr. Temperature coefficient of resonance frequency ranged from $>-74 ppm/^{\circ}C ~ -79 ppm/^{\circ}C$.

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Corrosion Monitoring of Reinforcing Bars in Cement Mortar Exposed to Seawater Immersion-and-dry Cycles (해수침지-건조 환경에 노출된 모르타르속 철근의 부식속도 평가)

  • Kim, Je-kyoung;Kee, Seong-Hoon;Yee, Jurng-Jae
    • Journal of the Korea institute for structural maintenance and inspection
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    • v.22 no.4
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    • pp.10-18
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    • 2018
  • The primary purposes of this study are to understand a fundamental aspect of current uniformity around a reinforcing bar (rebar) in cement mortar, and to develop an accurate monitoring method in a wet-dry cycling process with the alternative current (AC) impedance method. Three cement mortar specimens with two embedded rebars were prepared in the laboratory. As a main variable, the distance between two rebars was designed to be 10, 20 and 30 mm with the same thickness of 20 mm. To simulate the corrosion of rebars in concrete structures in a marine environment, three cement mortar specimens were exposed to 15 wet-drying cycles (24-hour-immersion in seawater and 48-hour-drying in a room temperature) in the laboratory. It was observed that the potential level shifted to a noble value during corrosion potential monitoring, which is attributed to acceleration of dissolved oxygen diffusion at the drying process. AC impedance was measured in a frequency range from 100 kHz to 1 mHz on a wet-drying process. A theoretical model was proposed to explain the interface condition between the rebars and cement mortar by using the equivalent circuit consisting of a solution resistance, a charge transfer resistance and a CPE (constant phase element). It was observed that the diffusion impedance appeared in a low frequency range as corrosion of rebars progresses. At the drying stage of the wet-drying cycles, the currents line for monitoring tended to be non-uniform at the interface of rebar/mortar, being phase shift, ${\theta}$, close to $-45^{\circ}$.

A GaAs MMIC Multi-Function Chip with a Digital Serial-to-Parallel Converter for an X-band Active Phased Array Radar System (X-대역 능동 위상 배열 레이더 시스템용 디지털 직병렬 변환기를 포함한 GaAs MMIC 다기능 칩)

  • Jeong, Jin-Cheol;Shin, Dong-Hwan;Ju, In-Kwon;Yom, In-Bok
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.22 no.6
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    • pp.613-624
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    • 2011
  • An MMIC multi-function chip for an X-band active phased array radar system has been designed and fabricated using a 0.5 ${\mu}m$ GaAs p-HEMT commercial process. A digital serial-to-parallel converter is included in this chip in order to reduce the number of the control interface. The multi-function chip provides several functions: 6-bit phase shifting, 6-bit attenuation, transmit/receive switching, and signal amplification. The fabricated multi-function chip with a relative compact size of 24 $mm^2$(6 mm${\times}$4 mm) exhibits a transmit/receive gain of 24/15 dB and a P1dB of 21 dBm from 8.5 GHz to 10.5 GHz. The RMS errors for the 64 states of the 6-bit phase shift and attenuation were measured to $7^{\circ}$ and 0.3 dB, respectively over the frequency.

The Research about the Correlation Between the Spontaneous Polarization of LuFe2O4 and Behavior of Iron by Mössbauer (뫼스바우어 분광법을 이용한 LuFe2O4의 자발분극과 철 이온의 거동과의 상관관계에 대한 연구)

  • Bang, Bong-Kyu;Kim, Chul-Sung;Kim, Sung-Baek;Cheong, S.W.
    • Journal of the Korean Magnetics Society
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    • v.17 no.1
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    • pp.10-13
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    • 2007
  • Single crystalline, $LuFe_2O_4$, was grown by the floating zone method. The crystal structure was a two-dimensional layered-type rhombohedral($R\={3}mh$) structure, with an $a_0=3.440(2)\;{\AA}\;and\;a\;c_0=25.263(2)\;{\AA}$. The magnetic $N\'{e}el$ temperature($T_N$) was determined to be 250 K. The $M\"{o}ssbauer$ spectrum at 12 K was fitted with four sextet sets which was resulted from the crystal structure. The spectrm at room temperature consisted of three singlets and a doublet with the electric quadrupole splitting. The isomer shift($\delta$) value of the singlet was $0.20{\pm}0.01mm/s$ relative to the Fe metal indicating the $Fe^{3+}$ valence state, and the value of the doublet was $0.70{\pm}0.01mm/s$ indicating $Fe^{2+}$. The $M\"{o}ssbauer$ absorption area ratio between $Fe^{3+}$ and $Fe^{2+}$ at room temperature was 1:1. The doublet phase of spectra gradually disappears by up to 360 K. At 360 K, the spectrum shows the singlet phase. We suggested that the spontaneous polarization effect of $LuFe_2O_4$ was caused by the change of iron behavior.

Mössbauer Studied of Multiferroic Bi2/3La1/3FeO3 Nanoparticles (Multiferroic Bi2/3La1/3FeO3 나노입자의 Mössbauer 연구)

  • Lee, Seung-Wha
    • Journal of the Korean Magnetics Society
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    • v.16 no.1
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    • pp.28-33
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    • 2006
  • La substituted perovskite $BiFeO_3$ have been prepared by a sol-gel method. Magnetic and structural properties of the powders were characterized with Mossbauer spectroscopy, XRD, SEM, and TG-DTA. The crystal structure is found to be a rhombohedrally distorted perovskite structure with the lattice constant $\alpha=3.985{\AA}\;and\;\alpha=89.5^{\circ}.\;Bi_{2/3}La_{1/3}FeO_3$ powders that were annealed at and above $600^{\circ}C$ have a single-phase perovskite structure. However, powders annealed at $900^{\circ}C$ have a typical perovskite structure with small amount of $Bi_2O_3$ phase. The Neel temperature of $Bi_{2/3}La_{1/3}FeO_3$ is found to be $680\pm3K$. The isomer shift value at room temperature is found to be 0.27 mm/s relative to the Fe metal, which is consistent with high-spin $Fe^{3+}$ charge states. Debye temperature far$Bi_{2/3}La_{1/3}FeO_3$ is found to be $305\pm5K$. The average hyperfine field $H_{hf}(T)$ of the $Bi_{2/3}La_{1/3}FeO_3$, shows a temperature dependence of $[H_{hf}(T)-H_{hf}(0)]/H_{hf}(0)=-0.42(T/T_N)^{3/2}-0.13(T/T_N)^{5/2}$ for $T/T_N<0.7$ indicative of spin-wave excitation.

Comparison in Elastic Wave Propagation Velocity Evaluation Methods (탄성파의 매질 내 이동속도 산정방법 비교)

  • Kim, Taesik
    • Journal of the Korean GEO-environmental Society
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    • v.15 no.5
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    • pp.31-37
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    • 2014
  • In situ investigations and laboratory tests using elastic wave have become popular in geotechnical and geoenvironmental engineering. Propagation velocity of elastic wave is the key index to evaluate the ground characteristics. To evaluate this, various methods were used in both time domain and frequency domain. In time domain, the travel time can be found from the two points that have the same phase such as peaks or first rises. Cross-correlation can also be used in time domain by evaluating the time shift amount that makes the product of signals of input and received waveforms maximum. In frequency domain, wave propagation velocity can be evaluated by computing the phase differences between the source and received waves. In this study, wave propagation velocity evaluated by the methods listed above were compared. Bender element tests were conducted on the specimens cut from the undisturbed hand-cut block samples obtained from Block 37 excavation site in Chicago, IL, US. The evaluation methods in time domain provides relatively wide range of wave propagation velocities due to the noise in signals and the sampling frequency of data logger. Frequency domain approach provides relatively accurate wave propagation velocities and is irrelevant to the sampling frequency of data logger.

The recombination velocity at III-V compound heterojunctions with applications to Al/$_x$/Ga/$_1-x$/As-GaAs/$_1-y$/Sb/$_y$/ solar cells

  • 김정순
    • 전기의세계
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    • v.28 no.4
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    • pp.53-63
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    • 1979
  • Interface recombination velocity in $Al_{x}$G $a_{1-x}$ As-GaAs and $Al_{0.85}$, G $a_{0.15}$ As-GaA $s_{1-y}$S $b_{y}$ heterojunction systems is studied as a function of lattice mismatch. The results are applied to the design of highly efficient III-V heterojunction solar cells. A horizontal liquid-phase epitaxial growth system was used to prepare p-p-p and p-p-n $Al_{x}$G $a_{1-x}$ As-GaA $s_{1-y}$S $b_{y}$-A $l_{x}$G $a_{1-x}$ As double heterojunction test samples with specified values of x and y. Samples were grown at each composition, with different GaAs and GaAs Sb layer thicknesses. A method was developed to obtain the lattice mismatch and lattice constants in mixed single crystals grown on (100) and (111)B oriented GaAs substrates. In the AlGaAs system, elastic lattice deformation with effective Poisson ratios .mu.$_{eff}$ (100=0.312 and .mu.$_{eff}$ (111B) =0.190 was observed. The lattice constant $a_{0}$ (A $l_{x}$G $a_{1-x}$ As)=5.6532+0.0084x.angs. was obtained at 300K which is in good Agreement with Vegard's law. In the GaAsSb system, although elastic lattice deformation was observed in (111) B-oriented crystals, misfit dislocations reduced the Poisson ratio to zero in (100)-oriented samples. When $a_{0}$ (GaSb)=6.0959 .angs. was assumed at 300K, both (100) and (111)B oriented GaAsSb layers deviated only slightly from Vegard's law. Both (100) and (111)B zero-mismatch $Al_{0.85}$ G $a_{0.15}$As-GaA $s_{1-y}$S $b_{y}$ layers were grown from melts with a weight ratio of $W_{sb}$ / $W_{Ga}$ =0.13 and a growth temperature of 840 to 820 .deg.C. The corresponding Sb compositions were y=0.015 and 0.024 on (100) and (111)B orientations, respectively. This occurs because of a fortuitous in the Sb distribution coefficient with orientation. Interface recombination velocity was estimated from the dependence of the effective minority carrier lifetime on double-heterojunction spacing, using either optical phase-shift or electroluminescence timedecay techniques. The recombination velocity at a (100) interface was reduced from (2 to 3)*10$^{4}$ for y=0 to (6 to 7)*10$^{3}$ cm/sec for lattice-matched $Al_{0.85}$G $a_{0.15}$As-GaA $s_{0.985}$S $b_{0.015}$ Although this reduction is slightly less than that expected from the exponential relationship between interface recombination velocity and lattice mismatch as found in the AlGaAs-GaAs system, solar cells constructed from such a combination of materials should have an excellent spectral response to photons with energies over the full range from 1.4 to 2.6 eV. Similar measurements on a (111) B oriented lattice-matched heterojunction produced some-what larger interface recombination velocities.ities.ities.s.

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Design of a 48MHz~1675MHz Frequency Synthesizer for DTV Tuners (DTV 튜너를 위한 48MHz~1675MHz 주파수합성기 설계)

  • Ko, Seung-O;Seo, Hee-Teak;Kwon, Duck-Ki;Yu, Chong-Gun
    • Journal of the Korea Institute of Information and Communication Engineering
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    • v.15 no.5
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    • pp.1125-1134
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    • 2011
  • In this paper a wideband frequency synthesizer is designed for DTV tuners using a $0.18{\mu}m$ CMOS process. It satisfies the DTV frequency band(48~1675MHz). A scheme is proposed to cover the full band using only one VCO and reliable broadband characteristics are achieved by reducing the variations of VCO gains and frequency steps. The simulation results show that the designed VCO has frequency range of 1.85~4.22GHz, phase noise at 4.22GHz of -89.7dBc/Hz@100kHz, gains of 62.4~95.8MHz/V(${\pm}21.0%$) and frequency steps of 22.9~47.9MHz(${\pm}35.3%$). The designed VCO has a phase noise of -89.75dBc/Hz at 100kHz offset. The designed synthesizer has a lock time less than $0.15{\mu}s$. The measured VCO tuning range is 2.05~3.4GHz. The frequency range is shifted down but still satisfy the target range owing to the design for enough margin. The designed circuit consumes 23~27mA from a 1.8V supply, and the chip size including PADs is $2.0mm{\times}1.5mm$.