• Korean Journal of Materials Research
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• 제8권10호
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• pp.969-974
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• 1998

The effect of vanadium, which is known to decrease the stacking fault energy of Fe-base alloys, on the microstructure and elevated temperature sliding wear resistance of Fe-20Cr- 1.7C- 1Si alloy was investigated. The maximum amount of vanadium maintaining the austenitic matrix seems to be about 3wt.% in Fe-20Cr- 1.7C-1Si-xV (x = 0, 1, 3, 6. lOwt.%) alloys and the austenitic alloys showed better wear resistance than ferritic alloys. It was considered to be due to the low stacking fault energy and $\gamma->\alpha$ strain-induced phase transformation at rmm temperature. It was shown from elevated temperature sliding tests up to .$225^{\circ}C$ that the addition of vanadium increases the temperature, at which the transition from oxidative wear to adhesive wear occur, and the amount of d formed at $225^{\circ}C$. Thus, it was considered that the addition of vanadium improves the elevated temperature sliding wear resistance of Fe-20Cr- 1.7C - 1Si by reducing the increasing rate of stacking fault energy with temperature and by increasing Ma temperature.

• Journal of the Korean Ceramic Society
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• 제40권10호
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• pp.991-997
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• 2003

The effect of A1$_4$C$_3$ additive on the thermoelectric properties of SiC ceramics were studied. Porous SiC ceramics with 47∼59% relative density were fabricated by sintering the pressed $\alpha$-SiC powder compacts with A1$_4$C$_3$at 2100∼220$0^{\circ}C$ for 3 h in Ar atmosphere. Crystalline phases of the sintered bodies were identified by powder X-Ray Diffraction (XRD) and their microstructures were observed with a Scanning Electron Microscope (SEM). In the case of A1$_4$C$_3$ addition, the phase transformation of 6H-SiC to 4H-SiC could be observed during sintering. The Seebeck coefficient and electrical conductivity were measured at 550∼95$0^{\circ}C$ in Ar atmosphere. In the case of undoped specimens, the Seebeck coefficients were positive (p-type semiconducting) possibly due to a dominant effect of the acceptor impurities (Al, Fe) contained in the starting powder and electrical conductivity increased as increasing sintering temperature. Electrical conductivity of A1$_4$C$_3$doped specimen is larger than that of undoped specimen under the same condition, which might be due to the reverse phase transformation and increasing of carrier density. And the Seebeck coefficient of A1$_4$C$_3$ doped specimen is also larger than that of undoped specimen. The density of specimen, the amount of addition and sintering atmosphere had significant effects on the thermoelectric property.

• Journal of Welding and Joining
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• 제33권5호
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• pp.53-60
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• 2015

Laser surface Melting Process is getting hardening layer that has enough depth of hardening layer as well as no defects by melting surface of substrate. This study used CW(Continuous Wave) Yb:YAG and STD11. Laser beam speed, power and beam interval are fixed at 70mm/sec, 2.8kW and 800um respectively. Hardness in the weld zone are equal to 400Hv regardless of melting zone, remelting zone overlapped by next beam and HAZ. Similarly, microstructures in all weld zone consist of dendrite structure that arm spacing is $3{\sim}4{\mu}m$, matrix is ${\gamma}$(Austenite) and dendrite boundary consists of ${\gamma}$ and $M_7C_3$ of eutectic phase. This microstructure crystallizes from liquid to ${\gamma}$ of primary crystal and residual liquid forms ${\gamma}$ and $M_7C_3$ of eutectic phase by eutectic reaction at $1266^{\circ}C$. After solidification is complete, primary crystal and eutectic phase remain at room temperature without phase transformation by quenching. On the other hand, microstructures of substrate consist of ferrite, fine $M_{23}C_6$ and coarse $M_7C_3$ that have 210Hv. Microstructures in the HAZ consist of fine $M_{23}C_6$ and coarse $M_7C_3$ like substrate. But, $M_{23}C_6$ increases and matrix was changed from ferrite to bainite that has hardness above 400Hv. Partial Melted Zone is formed between melting zone and HAZ. Partial Melted Zone near the melting zone consists of ${\gamma}$, $M_7C_3$ and martensite and Partial Melted Zone near the HAZ consists of eutectic phase around ${\gamma}$ and $M_7C_3$. Hardness is maximum 557Hv in the partial melted zone.

• Journal of the Mineralogical Society of Korea
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• 제4권1호
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• pp.43-50
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• 1991

Two solid solution-type phases has been experimentally found in the quaternary system Cu-Fe-Sn-S:$(Fe, Cu, Sn)_{1+x}$ and $Cu_{2-x}Fe_(1+x}SnS_4$. These solid solutions are stable around the CuS-FeS-SnS referecne plane in the composition tetrahedron. One is the sphalerite-type monosulfide solid solution which has a extensive stability range with varying degrees of sulfur/metal ratio 9.7-1.0/1.0. The other is tetrahedrite-type phase $Cu_{2-y)Fe_{1+y}SnS_4(y_{max}=0.4)$ which is stable along the $Cu_2FeSnS_4-FeS$ tie line, but shows no phase transformation in the subsolidus range and decomposes incongruently at the range of 835-862${\circ}C$, depending on the compositional variation. Particularly, the latter phase shows the characteristic superstructure reflections, indicating that it is a derivative of sphalerite structure. The stability field of these two sphalerite-type phases are defined on the basis of diffraction pattern and optical homogeneity of the synthetic materials at the temperature range of 700-400${\circ}C$.

• Korean Journal of Materials Research
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• 제11권2호
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• pp.88-93
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• 2001

The thermal behavior and the crystallographic characteristics of an epitaxial $C49-TiSi_2$ island formed in a Si (001) substrate by $N_2$, treatment were investigated by X-ray diffraction (XRD) and high-resolution transmission electron microscopy (HRTEM). It was found from the analyzed results that the epitaxial $C49-TiSi_2$ was thermally stable even at high temperature of $1000^{\circ}C$ therefore did not transform into the C54-stable phase and did not deform morphologically. HRTEM results clearly showed that the epitaxial $TiSi_2$ phase and Si have the orientation relationship of (060)[001]$TiSi_2$//(002)[110]Si, and the lattice strain energy at the interface was mostly relaxed by the formation of misfit dislocations. Furthermore, the mechanism on the formation of the epitaxial $_C49-TiSi2$ in Si and stacking faults lying on the (020) plane of the C49 Phase were discussed through the analysis of the HRTEM image and the atomic modeling.

• Journal of the Korean Ceramic Society
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• 제39권5호
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• pp.438-445
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• 2002

In this study, the glass frit of $PbO-TiO-2-SiO_2-BaO-ZnO-Al_2O-3-CaO-B_2O_3-Bi_2O_3-MgO$ system was manufactured. The glass was melted at $1,400{\circ}C$, quenched and attrition-milled. The glass frit powder was pressed and fired for 2h at the range of $750~1,000{\circ}C$. The crystallization of glass frit began at about $750{\circ}$ and at low temperature, the main crystal phases were hexagonal celsian($BaAl_2Si_2O_8$) and alumina. As the firing temperature increased, the crystal phases of monoclinic celsian, zinc aluminate, zinc silicate, calcium titanium silicate and titania appeared. And the increase of firing temperature led to transformation of hexagonal celsian to monoclinic. The only glass frit containing 15wt% PbO had the crystal phase of solid solution of $PbTiO_3-CaTiO_3$. At the frequency of 1 MHz, the dielectric constant of glass frit crystallized was in the range of 11~16 and the dielectric loss less than 0.020. But the glass frit containing 15wt% PbO had the dielectric constant of 17~26 and loss of 0.010~0.015 because of crystal phase of solid solution of $PbTiO_3-CaTiO_3$.

• Journal of the Korean institute of surface engineering
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• 제29권6호
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• pp.809-815
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• 1996

$Y_2O_3$-based metal-insulator-semiconductor (MIS) structure on p-Si(100) has been studied. Films were prepared by UHV reactive ionized cluster beam deposition (r-ICBD) system. The base pressure of the system was about $1 \times 10^{-9}$ -9/ Torr and the process pressure $2 \times 10^{-5}$ Torr in oxygen ambience. Glancing X-ray diffraction(GXRD) and in-situ reflection high energy electron diffracton(RHEED) analyses were performed to investigate the crystallinity of the films. The results show phase change from amorphous state to crystalline one with increasingqr acceleration voltage and substrate temperature. It is also found that the phase transformation from $Y_2O_3$(111)//Si(100) to $Y_2O_3$(110)//Si(100) in growing directions takes place between $500^{\circ}C$ and $700^{\circ}C$. Especially as acceleration voltage is increased, preferentially oriented crystallinity was increased. Finally under the condition of above substrate temperature $700^{\circ}C$ and acceleration voltage 5kV, the $Y_2O_3$films are found to be grown epitaxially in direction of $Y_2O_3$(1l0)//Si(100) by observation of transmission electron microscope(TEM). Capacitance-voltage and current-voltage measurements were conducted to characterize Al/$Y_2O_3$/Si MIS structure with varying acceleration voltage and substrate temperature. Deposited $Y_2O_3$ films of thickness of nearly 300$\AA$ show that the breakdown field increases to 7~8MV /cm at the same conditon of epitaxial growing. These results also coincide with XPS spectra which indicate better stoichiometric characteristic in the condition of better crystalline one. After oxidation the breakdown field increases to 13MV /cm because the MIS structure contains interface silicon oxide of about 30$\AA$. In this case the dielectric constant of only $Y_2O_3$ layer is found to be $\in$15.6. These results have demonstrated the potential of using yttrium oxide for future VLSI/ULSI gate insulator applications.

• Korean Chemical Engineering Research
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• 제46권6호
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• pp.1135-1141
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• 2008

The $La_{1-x}(Ca\;or\;Sr)xCrO_3$(x=0 and 0.25) interconnect materials for high temperature electrolysis of steam were investigated in views of sinterability and electrical conductivity. $LaCrO_3$, $La_{0.75}Ca_{0.25}CrO_3$ (LCC), and $La_{0.75}Sr_{0.25}CrO_3$ (LSC) powders were synthesized by coprecipitation method. Crystal structure was confirmed by X-ray diffraction (XRD). The sintering characteristics were analyzed by relative density and scanning electron microscopy. The electrical conductivity was measured by a DC four probe method. From the analyses of relative densities, it was found that the doped $LaCrO_3$ showed better sinterability than $LaCrO_3$ and the those sinterability increased with decrease of those particle sizes. The XRD results at different sintering temperatures for LCC and LSC revealed that the sinterability is closely related to the second phase transformation, that is, the second phase melting above $1,300^{\circ}C$ for LCC and $1,400^{\circ}C$ for LSC significantly promotes the sinterability. In case of electrical conductivities of LCC and LSC, which had a similar relative density, LCC showed better electrical conductivity than LSC.

• Transactions of the Korean Society of Mechanical Engineers B
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• 제35권3호
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• pp.221-228
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• 2011

The large-area crystallization of amorphous silicon thin films on glass backplanes is one of the key technologies in the manufacture of flat-panel displays. Joule-heating induced crystallization (JIC) is a recently introduced crystallization technology. It is considered a highly promising technique for fabricating OLEDs, because the film of amorphous silicon on glass can be crystallized in tens of microseconds, minimizing thermal and structural damage to the glass. In this study, we theoretically and experimentally investigated the temperature variation during the phase transformation. The critical temperatures for crystallization were determined for both solid-solid and solid-liquidsolid transitions, by carrying out in-situ temperature measurements and numerical analysis of the JIC.

• Journal of the Korean Crystal Growth and Crystal Technology
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• 제12권4호
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• pp.172-177
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• 2002

The CuZnAl alloys have some advantages against other shape memory alloys, such as the widely variable transformation temperature, the low cost and easy fabrication. The alloys have been produced mostly by metallurgical methods. Thereby a tendency to large grain sizes is observed, which causes brittle properties of the materials. In order to avoid these deficiencies a special powder metallurgical process, SPS(spark plasma sintering), is applied in the present investigation. The starting materials were the pure (99.9 %) Cu, Zn and Al element powders with different particle size. The relatively fine grained and homogeneous Cu-24.78Zn-9.11Al (at.%) and Cu-13.22Zn-17.24Al (at.%) shape memory alloys were obtained using the powders with size of 75-150 $\mu$m. The average grain size is about 70 $\mu$m and the phases at room temperature are the austenitic and martensitic phase respectively.