• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.13 no.6
• /
• pp.538-544
• /
• 2000

The laser patterning of sputter-deposited CoNdZr/Cu/CoNbZr multi-layered films had been tried using Nd:YAG laser. However generally it is very difficult to remove metal films because of their high reflectance of the laser on the surfaces. As a counterproposal for this problem authors for the first time tried to deposit energy-absorbing layers on the metal films and then irradiated the laser on the surfaces of energy-absorbing layers. Here the energy-absorbing layers consisted of laser energy-absorbing fine powders and binding polymers. Three kinds of powders for the energy-absorbing layers had been used to see the difference in the pattern formation with the degree of laser energy absorption. They were electrically conductive silver powders insulating BaTiO$_3$powder and semiconducting carbon powder. Remarkable difference in width of the formed pattern and the roughness of pattern edge were observed with the characteristic of the powder for the energy-absorbing layer. The pattern width using carbon paste was about three times larger than that using BaTiO$_3$paste. It was observed that the energy-absorbing layer with carbon was the most effective on this micro-patterning.

• JSTS:Journal of Semiconductor Technology and Science
• /
• v.13 no.5
• /
• pp.511-515
• /
• 2013

A Monte Carlo (MC) simulation study has been done in order to investigate the effects of line-edge-roughness (LER) induced by either 1P1E (single-patterning and single-etching) or 2P2E (double-patterning and double-etching) on fully-depleted silicon-on-insulator (FDSOI) tri-gate metal-oxide-semiconductor field-effect transistors (MOSFETs). Three parameters for characterizing the LER profile [i.e., root-mean square deviation (${\sigma}$), correlation length (${\zeta}$), and fractal dimension (D)] are extracted from the image-processed scanning electron microscopy (SEM) image for each photolithography method. It is experimentally verified that two parameters (i.e., ${\sigma}$ and D) are almost the same in each case, but the correlation length in the 2P2E case is longer than that in the 1P1E case. The 2P2E-LER-induced $V_TH$ variation in FDSOI tri-gate MOSFETs is smaller than the 1P1E-LER-induced $V_TH$ variation. The total random variation in $V_TH$, however, is very dependent on the other major random variation sources, such as random dopant fluctuation (RDF) and work-function variation (WFV).

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.20 no.4
• /
• pp.294-302
• /
• 2007

We studied on possibility of the application of photolithography technique to patterning the organic active layer poly(3-hexylthiophene) (P3HT). In the case of selective etching method, we made thin oxide film on P3HT thin film using $O_2$ treatment. We achieved the field-effect mobilities in the saturation regime ${\sim}1.2{\times}10^{-3}\;cm^2/V{\cdot}s$, $I_{on/off}$ ratios ${\sim}10^5$ in the selective etching method, ${\sim}7.4{\times}10^{-4}cm^2/V{\cdot}s$, $I_{on/off}$ ratios ${\sim}5{\times}10^3$ in the lift-off one. These values are higher than ones of the unpatterned P3HT-based OTFTs. On the basis of the above results, we demonstrate the photolithographic patterning for P3HT active layer is successfully carried out without degradation of P3HT.

• Proceedings of the KIEE Conference
• /
• 2004.11c
• /
• pp.623-625
• /
• 2004

In Electro-Luminescence Display making process, it is necessary to do high molecule patterning effectively. Recently, one of the most effective way is the patterning method using Ink-Jet head controller. To maximize the effect, it is needed to control each channel of Ink-Jet head and develop that controller. Thus, we implement the Ink-Jet Head Controller which can control the parameters of 128 fire pulses independently, improve the accuracy of patterns more than 100 times previous ones, and apply random patterns.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.23 no.2
• /
• pp.133-136
• /
• 2010

Laser direct patterning is one of new methods which are able to replace a conventional photolithography. In order reduce the fabrication cost and to improve the luminous efficiency of AC plasma display panels (PDPs), in this experiment, a Q-switched Nd:$YVO_4$ laser was used to fabricate T-shaped indium tin oxide (ITO) display electrodes. For the laser beam scanning speed from 100 mm/sec to 800 mm/sec, T-shaped ITO patterns were clearly obtained and investigated. The experimental results showed that the optimized T-shaped ITO electrode was obtained when the lasers scanning speed was 300 mm/s.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2007.11a
• /
• pp.191-191
• /
• 2007

By employing a photo-sensitive PVA as a photoresist, we first demonstrated simultaneous patterning and passivation of P3HT active layer. The passivation layers were obtained by annealing the organic layers after developing PVA and over-etching the P3HT layer. The fabricated OTFTs were electrically characterized. The OTFTs after the passivation exhibited the field-effect of ${\sim}5.9{\times}10^{-4}cm^2/V{\cdot}s$, on/off current ratio of ${\sim}10^3$. The value of OTFTs a little degradation with time in air but it appeared different unpassivated OTFT.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2011.08a
• /
• pp.211-211
• /
• 2011

Nanostructures, with a diversity of shapes, built on substrates have been developed within many research areas. Lithography is one powerful, but complex, technique to make structures at the nanometer scale, such as platinum nanowires for studying CO catalytic reactions [1], or aluminum nanodisks for studying the plasmon effect [2]. In this work, we approach a facile method to construct nanostructures using noble metals on a titania thin film by using self-assembled structures as a pattern. Here, a large-scale silica monolayer is transferred to the titania thin film substrates using a Langmuir-Blodgett trough, followed by the deposition of a thin transition metal layer. Owing to the hexagonal close-packed structure of the silica monolayer, we would obtain a metal nanostructure that includes separated metallic triangles (islands) after removing the patterning silica beads. This nanostructure can be employed to investigate the role of metal-oxide interfaces in CO catalytic reactions by changing the patterning silica particles with different sizes or by replacing the oxide support. The morphology and chemical composition of the structure can be characterized by scanning electron microscopy, atomic force microscopy and X-ray photoelectron spectroscopy. In addition, we modify these islands to a connected island structure by reducing the silica size of the patterning monolayer, which is utilized to generating hot electron flow based on the localized surface plasmon resonance effect of the metal nanostructures.

• Journal of the Korean Ceramic Society
• /
• v.56 no.6
• /
• pp.549-557
• /
• 2019

More than two decades of world-wide research efforts have resulted in several classes of potentially important materials. Among them are incipient piezoelectrics, which are especially useful for actuator applications. However, relatively large electric fields are required for activating the large incipient electromechanical strains. So far, many attempts have been made to reduce the required electric field by intentionally inhomogenizing the electric field distribution in the microstructure through core-shell and composite approaches. Here, we show that electric field concentration can be realized simply by adjusting electrode patterns. We have investigated the effect of electrode patterning on the incipient electromechanical strain properties of an exemplarily chosen lead-free relaxor system, revealing that electrode patterning does have a significant role on the strain properties of the given lead-free relaxor system. We believe that this approach would make a new strategy for ones to consider bringing the functional properties of electroceramics beyond their conventional limit.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2013.02a
• /
• pp.642-642
• /
• 2013

Graphene, two dimensional single layer of carbon atoms, has tremendous attention due to its superior property such as high electron mobility, high thermal conductivity and optical transparency. Especially, chemical vapor deposition (CVD) grown graphene has been used as a promising material for high quality and large-scale graphene film. Unfortunately, although CVD-grown graphene has strong advantages, application of the CVD-grown graphene is limited due to ineffective transfer process that delivers the graphene onto a desired substrate by using polymer support layer such as PMMA(polymethyl methacrylate). The transferred CVD-grown graphene has serious drawback due to remaining polymeric residues generated during transfer process, which induces the poor physical and electrical characteristics by a p-doping effect and impurity scattering. To solve such issue incurred during polymer transfer process of CVD-grown graphene, various approaches including thermal annealing, chemical cleaning, mechanical cleaning have been tried but were not successful in getting rid of polymeric residues. On the other hand, lithographical patterning of graphene is an essential step in any form of microelectronic processing and most of conventional lithographic techniques employ photoresist for the definition of graphene patterns on substrates. But, application of photoresist is undesirable because of the presence of residual polymers that contaminate the graphene surface consistent with the effects generated during transfer process. Therefore, in order to fully utilize the excellent properties of CVD-grown graphene, new approach of transfer and patterning techniques which can avoid polymeric residue problem needs to be developed. In this work, we carried out transfer and patterning process simultaneously with no polymeric residue by using a metal etch mask. The patterned thin gold layer was deposited on CVD-grown graphene instead of photoresists in order to make much cleaner and smoother surface and then transferred onto a desired substrate with PMMA, which does not directly contact with graphene surface. We compare the surface properties and patterning morphology of graphene by scanning electron microscopy (SEM), atomic force microscopy(AFM) and Raman spectroscopy. Comparison with the effect of residual polymer and metal on performance of graphene FET will be discussed.

• Journal of the Korean Society for Precision Engineering
• /
• v.30 no.6
• /
• pp.573-577
• /
• 2013

The one of the most important issue in roll-to-roll gravure printing is increase of ink transfer ratio or printability. As the result of high ink transfer ratio or printability, we can assess the quality of the printed patterns. The rheological properties are the important factors for the printability of electrodes patterning. In this study, the rheological properties of conductive ink are controlled by adding the solvent. The inks with different rheological properties are used for the patterning of the electrodes of $100{\mu}m$ by gravure printing equipment. The various printing speed, which also affect the rheological properties of conductive ink, is applied and the printed patterns are compared for their width and aspect ratio. Decreasing in the ink viscosity as well as increasing in the printing speed decreases the printability in gravure patterning, which shows that the rheological properties are important factors for the printability of gravure patterning.