• 한국정보디스플레이학회:학술대회논문집
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• 2008.10a
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• pp.1463-1465
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• 2008

We report all-ink-jet printed inorganic/organic hybrid TFTs on plastic substrates. We have investigated the optimal printing conditions to make uniform patterned layers of gate electrode, dielectrics, source/drain electrodes, and semiconductor as a coplanar type TFT in a successive manner. All ink-jet printed devices have good mechanical flexibility and current modulation characteristic even when bent.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.11a
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• pp.133-136
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• 2000

We investigated the improvement of viewing angle using a patterned double twisted (PDT) vertical-alignment (VA) cell mode on a homeotropic alignment layer. Good voltage-transmittance curves for negative dielectric anisotropic nematic liquid crystal (NLC) using the PDT-VA cell without a negative compensation film were obtained. The viewing angle of the PDT-VA cell without a negative compensation film was wider than that of a conventional VA cell.

• Journal of the Korean Society for Precision Engineering
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• v.31 no.11
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• pp.993-998
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• 2014

Silver (Ag) grid patterned PET substrates were manufactured by thermal roll-imprinting methods. We coated highly conductive layer (HCL) as a supply electrode on the Ag grid patterned PET in the three kinds of conditions. One was no-HCL without conductive PEDOT:PSS on the Ag grid patterned PET substrate, another was thin-HCL coated with ~50 nm thickness of conductive PEDOT:PSS on the Ag grid PET, and the other was thick-HCL coated with ~95 nm thickness of conductive PEDOT:PSS. These three HCLs in order showed 73.8%, 71.9%, and 64.7% each in transmittance, while indicating $3.84{\Omega}/{\Box}$, $3.29{\Omega}/{\Box}$, and $2.65{\Omega}/{\Box}$ each in sheet resistance. Fabrication of organic solar cells (OSCs) with HCL Ag grid patterned PET substrates showed high power conversion efficiency (PCE) on the thin-HCL device. The thick-HCL device decreased efficiency due to low open circuit voltage ($V_{OC}$). And the Ag grid pattern device without HCL had the lowest energy efficiency caused by quite low short current density ($J_{SC}$).

• Proceedings of the Materials Research Society of Korea Conference
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• 2007.11a
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• pp.149.2-149.2
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• 2007

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.9
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• pp.790-794
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• 2003

This paper describes the fabrication and characteristics of ceramic thin film type pressure sensors based on Ta-N strain gauges for high temperature applications. Ta-N thin-film strain gauges are deposited onto a thermally oxidized Si diaphragm by RF sputtering in an argon-nitrogen atmos[here($N_2$ gas ratio: 8%, annealing condition: 90$0^{\circ}C$, 1 hr.), patterned on a wheatstone bridge configuration, and used as pressure sensing elements with a high stability and a high gauge factor. The sensitivity is 1.097 ～ 1.21 mV/Vㆍkgf/$\textrm{cm}^2$ in the temperature range of 25 ～ 200 $^{\circ}C$ and the maximum non-linearity resistance), non-linearity than existing Si piezoresistive pressure sensors. The fabricated ceramic thin-film type pressure sensor is expected to be usefully applied as pressure and load sensors that os operable under high-temperature.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.402-402
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• 2010

The formation of Au nano particles from thin films on patterned substrates depends sensitively on film thickness and time. The nano Au line and shape formed by annealing Au films on patterned oxide substrates are different from those formed on semiconductor. In this experiment, we deposited thin Au films on patterned $Al_2O_3$(0006) using E-beam evaporator, and annealed them at various temperatures and thickness under various conditions by RTA. We measured behavior of the Au during annealing Au structure and shape are changed when Au film becomes thicker. The shape of the resultant Au nano particles and their coarsening process are investigated using SEM and XRD.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2005.10a
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• pp.506-508
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• 2005

In general, organic TFTs are comprised of four components: gate electrode, gate dielectric, organic active semiconductor layer, and source and drain contacts. The TFT current, in turn, is typically determined by channel length and width, carrier field effect mobility, gate dielectric thickness and permittivity, contact resistance, and biasing conditions. More recently, a number of techniques and processes have been introduced to the fabrication of OTFT circuits and displays that aim specifically at reduced fabrication cost. These include microcontact printing for the patterning of metals and dielectrics, the use of photochemically patterned insulating and conducting films, and inkjet printing for the selective deposition of contacts and interconnect pattern. In the fabrication of organic TFTs, microcontact printing has been used to pattern gate electrodes, gate dielectrics, and source and drain contacts with sufficient yield to allow the fabrication of transistors. We were fabricated a pentacene OTFTs on flexible PEN film. Au/Cr was used for the gate electrode, parylene-c was deposited as the gate dielectric, and Au/Cr was chosen for the source and drain contacts; were all deposited by ion-beam sputtering and patterned by microcontact printing and lift-off process. Prior to the deposition of the organic active layer, the gate dielectric surface was treated with octadecyltrichlorosilane(OTS) from the vapor phase. To complete the device, pentacene was deposited by thermal evaporation and patterned using a parylene-c layer. The device was shown that the carrier field effect mobility, the threshold voltage, the subthreshold slope, and the on/off current ratio were improved.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.9 no.2
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• pp.168-172
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• 1999

The 9 $\mu\textrm{m}$ GaN films on sapphire substrate were grown by Hydride vapor phase epitaxy. Dislocation density of these GaN films was measured by TEM. GaN film with crack free and mirror surface was directly grown on sapphire substrate. The dislocation density of this GaN film was $2{\times}10^9/cm^2$. The surface of GaN film on patterned GaN layer also presented a smooth mirror. But a part of GaN surface included holes because of incomplete coalescence. The dislocation density of GaN film above the mask region was lower than that in the window region. Especially, the dislocation density in the region between mask center and window region was close to dislocation free. The average dislocation density of ELO GaN was $8{\times}10^7/cm^2$.

• Korean Journal of Materials Research
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• v.14 no.1
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• pp.46-51
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• 2004

The annealing of a Cu(4.5at.% Mg)/$SiO_2$/Si structure in ambient $O_2$, at 10 mTorr, and $300-500^{\circ}C$, allows for the outdiffusion of the Mg to the Cu surface, forming a thin MgO (15 nm) layer on the surface. The surface MgO layer was patterned, and successfully served as a hard mask, for the subsequent dry etching of the underlying Mg-depleted Cu films using an $O_2$ plasma and hexafluoroacetylacetone [H(hfac)] chemistry. The resultant MgO/Cu structure, with a taper slope of about $30^{\circ}C$ shows the feasibility of the dry etching of Cu(Mg) alloy films using a surface MgO mask scheme. A dry-etched Cu(4.5at.% Mg) gate a-Si:H TFT has a field effect mobility of 0.86 $\textrm{cm}^2$/Vs, a subthreshold swing of 1.08 V/dec, and a threshold voltage of 5.7 V. A novel process for the dry etching of Cu(Mg) alloy films, which eliminates the use of a hard mask, such as Ti, and results in a reduction in the process steps is reported for the first time in this work.

• Progress in Superconductivity
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• v.5 no.2
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• pp.118-123
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• 2004

We investigated quench distribution in AU/YBCO thin film meander lines with a heater. Quench distribution during faults is important for superconducting fault current limter applications, because uniform quench allows application of higher voltages across the meander lines. AU/YBCO thin films grown on sapphire substrates were patterned into meander lines by photolithography. Gold films grown on the rear sides of the substrates were also patterned into meander lines, and used as heaters. Meander lines on the front and the rear sides were connected in parallel. The meander lines were subjected to simulated AC fault currents for quench measurements during faults. They were immersed in liquid nitrogen during the experiment for effective cooling. Resistance of the AU/YBCO meander lines initially increased more rapidly with the rear heater than without, and consequently the fault current was limited more. The resistance subsequently became similar, The resistance distribution was more uniform with the heater, especially during the initial quench. Quench was completed more uniformly and significantly earlier. This resulted in uniform distribution of dissipated power. These results could be explained with the concept of quench propagation, which was accelerated by heat transfer across the substrate from the rear heater.