• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11a
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• pp.181-184
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• 2001

Chemical Mechanical Polishing(CMP) of Shallow Trench Isolation(STI) structure in 0.18 m semiconductor device fabrication is studied. CMP process is applied for the STI structure with and without reverse moat pattern and End Point Detection (EPD) method is tested. To optimize the transistor properties related metal 1 parameters, we studied the correlation between CMP thickness of STI using high selectivity slurry, DOE of gate etch recipe, and 1st metal DC values. Remaining thickness of STI CMP is proportional to the thickness of gate-etch process and this can affect to gate profile. As CMP thickness increased, the N-poly foot is deteriorated, and the P-Poly Noth is getting better. If CD (Critical Dimension) value is fixed at some point, all IDSN/P values are in inverse proportional to CMP thickness by reason of so called Profile Effect. Weve found out this phenomenon in all around DOE conditions of Gate etch process and we also could understand that it would not have any correlation effects between VT and CMP thickness in the range of POE 120 sec conditions. As CMP thickness increased by 100 ${\AA}$, 3.2 u${\AA}$ of IDSN is getting better in base 1 condition. In POE 50% condition, 1.7 u${\AA}$ is improved, and 0.7 u${\AA}$ is improved in step 2 condition. Wed like to set the control target of CD (critical dimension) in gate etch process which can affect Idsat, VT property versus STI topology decided by CMP thickness. We also would like to decide optimized thickness target of STI CMP throughout property comparison between conventional STI CMP with reverse moat process and newly introduced STI CMP using high selectivity slurry. And we studied the process conditions to reduce Gate Profile Skew of which source known as STI topology by evaluation of gate etch recipe versus STI CMP thickness.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.458-458
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• 2010

The process window for the etch selectivity of silicon nitride ($Si_3N_4$) layers to extreme ultra-violet (EUV) resist and variation of line edge roughness (LER) of EUV resist were investigated durin getching of $Si_3N_4$/EUV resist structure in a dual-frequency superimposed capacitive coupled plasma (DFS-CCP) etcher by varying the process parameters, such as the $CH_2F_2$ and $N_2$ gas flow rate in $CH_2F_2/N_2$/Ar plasma. The $CH_2F_2$ and $N_2$ flow rate was found to play a critical role in determining the process window for infinite etch selectivity of $Si_3N_4$/EUV resist, due to disproportionate changes in the degree of polymerization on $Si_3N_4$ and EUV resist surfaces. The preferential chemical reaction between hydrogen and carbon in the hydrofluorocarbon ($CH_xF_y$) polymer layer and the nitrogen and oxygen on the $Si_3N_4$, presumably leading to the formation of HCN, CO, and $CO_2$ etch by-products, results in a smaller steady-state hydrofluorocarbon thickness on $Si_3N_4$ and, in turn, in continuous $Si_3N_4$ etching due to enhanced $SiF_4$ formation, while the $CH_xF_y$ layer is deposited on the EUV resist surface. Also critical dimension (and line edge roughness) tend to decrease with increasing $N_2$ flow rate due to decreased degree of polymerization.

• Journal of the Korean Vacuum Society
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• v.6 no.3
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• pp.287-292
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• 1997

This study was tried to form the silica waveguide using high density plasma. Plasma characteristics have been investigated as a function of etch parameters using a single Langmuir probe and optical emission spectroscopy(OES). As etch parameters, $CF_4/CHF_3$ ratio, bias power, and source power were chosen as main variables. The oxide etch characteristics of inductively coupled plasma(ICP) dry etcher such as the etch rate, etch profile, and surface roughness were investigated s a function of etch parameters. On the basis of these results, the core pattern of the wave guide composed of $SiO_2-P_2O_5$ was formed. It was confirmed that the etch rate of $SiO_2-P_2O_5$ core layer was 380 nm/min and the aluminum selectivity to oxide, that is, mask layer was approximately 30:1. The SEM images showed vertical etched profiles and minimal loss of pattern width.

• Mass Spectrometry Letters
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• v.6 no.3
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• pp.71-74
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• 2015

Low temperature plasma (LTP) ionization mass spectrometry (MS) is one of the widely used ambient analysis methods which allows soft-ionization and rapid analysis of samples in ambient condition with minimal or no sample preparation. One of the major advantages of LTP MS is selective analysis of low-molecular weight, volatile and low- to medium-polarity analytes in a sample. On the contrary, the selectivity for particular class of compound also implies its limitation in general analysis. One of the critical factors limiting LTP ionization efficiency is poor desorption of analytes with low volatility. In this study, a home-built LTP ionization source with Peltier heating sample stage was constructed to enhance desorption and ionization efficiencies of analytes in a sample and its performance was evaluated using standard mixture containing fatty acid ethyl esters (FAEEs). It was also used to reproduce the previous bacterial identification experiment using pattern-recognition for FAEEs. Our result indicates, however, that the bacterial differentiation from FAEE pattern recognition using LTP ionization MS still has many limitations.

• Proceedings of the KIEE Conference
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• 1998.07g
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• pp.2541-2543
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• 1998

This paper describes the fabrication process to fabricate metallic structure of high aspect ratio using LlGA-like process. SU-8 is used as an electroplating mold. SU-8 is an epoxy-based photoresist, designed for ultrathick PR structure with single layer coating [1,2]. We can get more than $100{\mu}m$ thick layer by single coating with conventional spin coater, and applying multiple coating can make thicker layers. In the experiments, we used different kinds of SU-8, having different viscosity. To optimize the conditions for mold fabrication process, experiments are performed varying spinning time and speed, soft-bake, develop and PEB (Post Expose Bake) condition. With the optimized condition, minimum line and space of $3{\mu}m$ pattern with a thickness of $40{\mu}m$ and $4{\mu}m$ pattern with a thickness of $130{\mu}m$ were obtained. Using the patterned PR as a plating mold, metallic structure was fabricated by electroplating. We have fabricated a electroplated nickel comb actuator using SU-8 as plating mold. The thickness of PR mold is $45{\mu}m$ and that of plated nickel is$40{\mu}m$. Minimum line of the mold is $5{\mu}m$. Patterned metallic layer or polymer layer, which has selectivity with the structural plated metallic layer, can be used as sacrificial layer for fabrication of free-standing structure.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.05b
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• pp.74-77
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• 2002

Ferroelectric Random Access Memory(FRAM) and MEMS applications require noble metal or refractory metal oxide electrodes. In this study, Ru thin films were etched using $O_2$+10% $CF_4$ plasma in an inductively coupled plasma(ICP) etching system. The etch rate of Ru thin films was examined as function of rf power, DC bias applied to the substrate. The enhanced etch rate can be obtained not only with increasing rf power and DC bias voltage, but also with small addition $CF_4$ gas. The selectivity of $SiO_2$ over Ru are 1.3. Radical densities of oxygen and fluorine in $CF_4/O_2$ plasma have been investigated by optical emission spectroscopy(OES). The etching profiles of Ru films with an photoresist pattern were measured by a field emission scanning electron microscope (FE-SEM). The additive gas increases the concentration of oxygen radicals, therefore increases the etch rate of the Ru thin films and enhances the etch slope. In $O_2$+10% $CF_4$ plasma, the etch rate of Ru thin films increases up to 10% $CF_4$ but decreases with increasing $CF_4$ mixing ratio.

• Journal of Environmental Science International
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• v.8 no.4
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• pp.497-502
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• 1999

Removal of Pb(Ⅱ), Cu(Ⅱ), Cr(Ⅲ), and Zn(Ⅱ) ions from aqueous solutions using the adsorption process on domestic loess minerals has been investigated. Variations of contact time, pH, adsorption isotherms and selectivity of coexisting ions and leachate were experimental parameters. YDI, YPT and KRT samples diluted in 1% aquous solution which was adjusted pH 10.8, 8.0 and 6.50, respectively. The result of XRD measurement, Quartz was mainly observed in all samples. In the case of KRT sample, Kaolinite, Feldspar, Chlorite consisting of clay minerals shows almost same pattern with YPT samples. Different properties showed from the YDI sample containing Iillite, remarkably. For all the metals, maximum adsorption was observed at 30min∼60min. Adsorption of metal ions on loess minerals were reached an equilibrium by shaking the solution for about 30min. Removal efficiency of Pb(Ⅱ) ion for KRT, YPT and YDI were 84.7%, 92% and 100%, respectively. The Cu(Ⅱ) and Zn(Ⅱ) adsorptivity on KRT showed the low in various pH solution However, those on YPT and YDI were high than 90% except for the pH 2 solution. The orders of adsorptivities for domestic loess minerals showed as following : YPT>KRT>YDI. The adsorption isotherms of Cu(Ⅱ) and Zn(Ⅱ) ions on clay minerals were fitted to a Freundlich's. Freundlich constants(1/n) of KRT and YPT domestic loess minerals were 0.63, 0.97 and 0.36, 0.25, respectively.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.8 no.2
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• pp.233-239
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• 1998

SiC thin films were deposited by chemical vapor deposition method using tetramethylsilane (TMS) and hexamethyldisilane (HMDS). The chamber pressure during the deposition was kept at about 1 torr. Precursor was transported to the reaction chamber by $H_2$gas and SiC deposition was carried out at the reaction temperature of $1200^{\circ}C$. Si-wafer masked with tantalum and MgO single crystal covered with platinum and molybdenum were used as substrates. The selectivity of SiC deposition was observed by comparing the microstructure between metal (Ta, Pt, and Mo) surfaces and substrate surfaces (Si and MgO). The deposited films were identified as the $\beta-SiC$ phase by X-ray diffraction pattern. Also, the deposition -behavior of SiC on each surface was investigated by the scanning electron microscope analysis.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11b
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• pp.209-212
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• 2001

Polyimide(PI) films have been considered as the interlayer dielectric materials due to low dielectric constant, low water absorption, high gap-fill and planarization capability. The PI mm Was etched with using inductively coupled plasma (ICP). The etching characteristics such as etch rate and selectivity were evaluated to gas mixing ratio. High etch rate was $8300{\AA}/min$ and vertical profile was approximately acquired $90^{\circ}$ at $CF_{4}/(CF_{4}+O_{2})$ of 0.2. The selectivies of polyimide to PR and $SiO_{2}$ were 1.2, 5.9, respectively. The etching profiles of PI films with an aluminum pattern were measured by a scanning electron microscope (SEM). The chemical states on the PI film surface were investigated by x-ray photoelectron spectroscopy (XPS). Radical densities of oxygen and fluorine in different gas mixing ratio of $O_{2}/CF_{4}$ were investigated by optical emission spectrometer (OES).

• Bulletin of the Korean Chemical Society
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• v.26 no.1
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• pp.57-62
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• 2005

The potentiometric responses for various anions are investigated with membrane electrode (membrane 1) based on 1,3-diethyl-1,3-dihydroxy-1,3-bis(2-dimethylaminomethyl ferrocenyl) disiloxane. The nitrate ion-selective electrode based on compound 1 gave a good Nernstian response of 58.18 mV per decade for nitrate with the detection limit of −e5.66 of log [NO3−e]. Compound 1 has all those functional groups and the other two compounds have less functional group of ferrocenyl or ferrocenyl and hydroxide, respectively. Even though, potentiometric response to anions was excellent at pH 5, the selectivity pattern for all three membrane electrode based on series of disiloxane is almost like Hofmeister sequence at pH 5. However, the membrane electrode 1-3 exhibited very different response to anions at pH 7. In this pH, NH2 is not protonated and ionophore may act as neutral carrier. Hydrogen bond may enhance the responsibility to hydrogen acceptors and intramolecular electro-active site may increase the permeability of analyte to ionophore in membrane.