• Title/Summary/Keyword: pattern mask

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A Study on the Protection Functionality of Supermodern Fashion (슈퍼모던 패션의 보호기능에 관한 연구)

  • Kim, Wan-Joo;Lee, Keum-Hee
    • Journal of the Korean Society of Clothing and Textiles
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    • v.32 no.8
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    • pp.1264-1273
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    • 2008
  • The purpose of this study is to analyze protection functionality of supermodern fashion which is shown by responding to supermodern environment, where non-spaces increases in the 21st modern city. The theoretical background is drawn for supermodern environment theory. For the study, he researcher used existing study and specialized book and analyzed photograph materials by selecting them in specialized fashion book, internet site and designer's collection. The works from 1995 S/S collection to 2008 S/S collection are analyzed. The result of this study is as follow. First, supermodern design is adopting the shape of high-functional element, electronic device, protective device to protect wearer in non-space. Second, in order to mentally protect individual anonymous leadership of interaction is granted by adopting hood, veil or mask. Third, supermodern design is creating independent and user-based space by shape transformation in change of urban environment. Fourth, in order to protect wearer through camouflage or concealment, camouflage pattern or neutral color are used.

A Study on the Laser Direct Imaging for FPD ( I ) (평판 디스플레이용 Laser Direct Imaging에 관한 연구( I ))

  • Kang, H.S.;Kim, K.R.;Kim, H.W.;Hong, S.K.
    • Proceedings of the Korean Society of Laser Processing Conference
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    • 2005.11a
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    • pp.37-41
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    • 2005
  • When screen size of the Flat Panel Display (FPD) becomes larger, the traditional photo-lithography using photomasks and UV lamps might not be possible to make patterns on Photo Resist (PR) material due to limitation of the mask size. Though the maskless photo-lithography using UV lasers and scanners had been developed to implement large screen display, it was very slow to apply the process for mass-production systems. The laser exposure system using 405 nm semi-conductor lasers and Digital Micromirror Devices (DMD) has been developed to overcome above-mentioned problems and make more than 100 inches FPD devices. It makes very fine patterns for full HD display and exposes them very fast. The optical engines which contain DMD, Micro Lens Array (MLA) and projection lenses are designed for 10 to 50 ${\mu}m$ bitmap pattern resolutions. The test patterns for LCD and PDP displays are exposed on PR and Dry Film Resists (DFR) which are coated or laminated on some specific substrates and developed. The fabricated edges of the sample patterns are well-defined and the results are satisfied with tight manufacturing requirements.

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A Study on Edge Detection using Grey-Level Morphology (그레이 레벨 모폴로지를 이용한 에지 검출에 관한 연구)

  • Lee, Chang-Young;Kim, Nam-Ho
    • Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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    • 2017.10a
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    • pp.687-690
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    • 2017
  • Edge detection is an important step in determining the performance of lane recognition, object and pattern detection, and so on. And much research has been done until now. Sobel, Prewitt, Roberts, and Canny edge detection algorithms are widely known. However, these algorithms are often judged to be a non-edge region when processing a smooth change in brightness value. Therefore, in this paper, edge detection algorithm using gray-level morphology using erosion, expansion, open and close in the mask area. is proposed.

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Learning Directional LBP Features and Discriminative Feature Regions for Facial Expression Recognition (얼굴 표정 인식을 위한 방향성 LBP 특징과 분별 영역 학습)

  • Kang, Hyunwoo;Lim, Kil-Taek;Won, Chulho
    • Journal of Korea Multimedia Society
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    • v.20 no.5
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    • pp.748-757
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    • 2017
  • In order to recognize the facial expressions, good features that can express the facial expressions are essential. It is also essential to find the characteristic areas where facial expressions appear discriminatively. In this study, we propose a directional LBP feature for facial expression recognition and a method of finding directional LBP operation and feature region for facial expression classification. The proposed directional LBP features to characterize facial fine micro-patterns are defined by LBP operation factors (direction and size of operation mask) and feature regions through AdaBoost learning. The facial expression classifier is implemented as a SVM classifier based on learned discriminant region and directional LBP operation factors. In order to verify the validity of the proposed method, facial expression recognition performance was measured in terms of accuracy, sensitivity, and specificity. Experimental results show that the proposed directional LBP and its learning method are useful for facial expression recognition.

Tunneling magnetoresistance in ferromagnetic tunnel junctions with conditions of insulating barrier preparation (부도체층 제작조건에 따른 강자성 터널접합의 투과자기저항 특성 연구)

  • 백주열;현준원
    • Journal of Surface Science and Engineering
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    • v.32 no.1
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    • pp.61-66
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    • 1999
  • The Spin-dependent tunneling magnetoresistance (TMR) effect was observed in $NiFe/Al_2O_3$/Co thin films. The samples were prepared by magnetron sputtering in a system with a base pressure of $3\times10^{-6}$Torr. the insulating $Al_2O_3$layer was prepared by r.f. plasma oxydation method of a metallic Al layer. The ferromagnetic and insulating layers were deposited through metallic masks to produce the cross pattern form. The junction has an active area of $0.3\times0.3\textrm{mm}^2$ and the $Al_2O_3$layer is deposited through a circular mask with a diameter of 1mm. It is very important that insulating layer is formed very thinly and uniformly in tunneling junction. The ferromagnetic layer was fabricated in optimum conditions and the surface of that was very flat, which was observed by AFM. Tunneling junction was confirmed through nonlinear I-V curve. $NiFe/Al_2O_3$/Co junction was observed for magnetization behavior and magnetoresistance property and magnetoresistance property is dependent on magnetization behavior and magnetoresistance property and magnetoresistance property is dependent on magnetization behavior of t재 ferromagnetic layer. The maximum magnetoresistance ratio was about 6.5%.

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Computational Integral Imaging Reconstruction of a Partially Occluded Three-Dimensional Object Using an Image Inpainting Technique

  • Lee, Byung-Gook;Ko, Bumseok;Lee, Sukho;Shin, Donghak
    • Journal of the Optical Society of Korea
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    • v.19 no.3
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    • pp.248-254
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    • 2015
  • In this paper we propose an improved version of the computational integral imaging reconstruction (CIIR) for visualizing a partially occluded object by utilizing an image inpainting technique. In the proposed method the elemental images for a partially occluded three-dimensional (3D) object are recorded through the integral imaging pickup process. Next, the depth of occlusion within the elemental images is estimated using two different CIIR methods, and the weight mask pattern for occlusion is generated. After that, we apply our image inpainting technique to the recorded elemental images to fill in the occluding area with reliable data, using information from neighboring pixels. Finally, the inpainted elemental images for the occluded region are reconstructed using the CIIR process. To verify the validity of the proposed system, we carry out preliminary experiments in which faces are the objects. The experimental results reveal that the proposed system can dramatically improve the quality of a reconstructed CIIR image.

Development and performance evaluation of large-area hybrid gamma imager (LAHGI)

  • Lee, Hyun Su;Kim, Jae Hyeon;Lee, Junyoung;Kim, Chan Hyeong
    • Nuclear Engineering and Technology
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    • v.53 no.8
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    • pp.2640-2645
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    • 2021
  • We report the development of a gamma-ray imaging device, named Large-Area Hybrid Gamma Imager (LAHGI), featuring high imaging sensitivity and good imaging resolution over a broad energy range. A hybrid collimation method, which combines mechanical and electronic collimation, is employed for a stable imaging performance based on large-area scintillation detectors for high imaging sensitivity. The system comprises two monolithic position-sensitive NaI(Tl) scintillation detectors with a crystal area of 27 × 27 cm2 and a tungsten coded aperture mask with a modified uniformly redundant array (MURA) pattern. The performance of the system was evaluated under several source conditions. The system showed good imaging resolution (i.e., 6.0-8.9° FWHM) for the entire energy range of 59.5-1330 keV considered in the present study. It also showed very high imaging sensitivity, successfully imaging a 253 µCi 137Cs source located 15 m away in 1 min; this performance is notable considering that the dose rate at the front surface of the system, due to the existence of the 137Cs source, was only 0.003 µSv/h, which corresponds to ~3% of the background level.

Striation of coated conductors by photolithography process

  • Byeong-Joo Kim;Miyeon Yoon;Myeonghee Lee;Sang Ho Park;Ji-Kwang Lee;Kyeongdal Choi;Woo-Seok Kim
    • Progress in Superconductivity and Cryogenics
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    • v.25 no.4
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    • pp.50-53
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    • 2023
  • In this study, the photolithography process was chosen to reduce the aspect ratio of the cross-section of a high-temperature superconducting (HTS) tape by dividing the superconducting layer of the tape. Reducing the aspect ratio decreases the magnetization losses in the second-generation HTS tapes generated by AC magnetic fields. The HTS tape used in the experiment has a thin silver (Ag) layer of about 2 ㎛ on top of the REBCO superconducting layer and no additional stabilizer layer. A dry film resist (DFR) was laminated on top of the HTS tape by a lamination method for the segmentation. Exposure to a 395 nm UV lamp on a patterned mask cures the DFR. Dipping with a 1% Na2CO3 solution was followed to develop the uncured film side and to obtain the required pattern. The silver and superconducting layers of the REBCO films were cleaned with an acid solution after the etching. Finally, the segmented HTS tape was completed by stripping the DFR film with acetone.

A study of fabrication micro bump for TSP testing using maskless lithography system. (Maskless Lithography system을 이용한 TSP 검사 용 micro bump 제작에 관한 연구.)

  • Kim, Ki-Beom;Han, Bong-Seok;Yang, Ji-Kyung;Han, Yu-Jin;Kang, Dong-Seong;Lee, In-Cheol
    • Journal of the Korea Academia-Industrial cooperation Society
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    • v.18 no.5
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    • pp.674-680
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    • 2017
  • Touch Screen Panel (TSP) is a widely used personal handheld device and as a large display apparatus. This study examines micro bump fabrication technology for TSP test process. In the testing process, as TSP is changed, should make a new micro bump for probing and modify the testing program. In this paper we use a maskless lithography system to confirm the potential to fabricatemicro bump to reducecost and manufacturing time. The requiredmaskless lithography system does not use a mask so it can reduce the cost of fabrication and it flexible to cope with changes of micro bump probing. We conducted electro field simulation by pitches of micro bump and designed the lithography pattern image for the maskless lithography process. Then we conducted Photo Resist (PR) patterning process and electro-plating process that are involved in MEMS technology to fabricate micro bump.

Characterization of GaN epitaxial layer grown on nano-patterned Si(111) substrate using Pt metal-mask (Pt 금속마스크를 이용하여 제작한 나노패턴 Si(111) 기판위에 성장한 GaN 박막 특성)

  • Kim, Jong-Ock;Lim, Kee-Young
    • Journal of the Microelectronics and Packaging Society
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    • v.21 no.3
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    • pp.67-71
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    • 2014
  • An attempt to grow high quality GaN on silicon substrate using metal organic chemical vapor deposition (MOCVD), herein GaN epitaxial layers were grown on various Si(111) substrates. Thin Platinum layer was deposited on Si(111) substrate using sputtering, followed by thermal annealing to form Pt nano-clusters which act as masking layer during dry-etched with inductively coupled plasma-reactive ion etching to generate nano-patterned Si(111) substrate. In addition, micro-patterned Si(111) substrate with circle shape was also fabricated by using conventional photo-lithography technique. GaN epitaxial layers were subsequently grown on micro-, nano-patterned and conventional Si (111) substrate under identical growth conditions for comparison. The GaN layer grown on nano-patterned Si (111) substrate shows the lowest crack density with mirror-like surface morphology. The FWHM values of XRD rocking curve measured from symmetry (002) and asymmetry (102) planes are 576 arcsec and 828 arcsec, respectively. To corroborate an enhancement of the growth quality, the FWHM value achieved from the photoluminescence spectra also shows the lowest value (46.5 meV) as compare to other grown samples.