• 한국전기전자재료학회논문지
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• 제29권8호
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• pp.461-465
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• 2016

n-type silicon shows the better tolerance towards metal impurities with a higher minority carrier lifetime compared to p-type silicon substrate. Due to better lifetime stability as compared to p-type during illumination made the photovoltaic community to switch toward n-type wafers for high efficiency silicon solar cells. We fabricated the front electrode of the n-type solar cell with AgAl paste. The electrodes characteristics of the AgAl paste depend on the contact junction depth that is closely related to the firing temperature. Metal contact depth with p+ emitter, with optimized depth is important as it influence the resistance. In this study, we optimize the firing condition for the effective formation of the metal depth by varying the firing condition. The firing was carried out at temperatures below $670^{\circ}C$ with low contact depth and high contact resistance. It was noted that the contact resistance was reduced with the increase of firing temperature. The contact resistance of $5.99m{\Omega}cm^2$ was shown for the optimum firing temperature of $865^{\circ}C$. Over $900^{\circ}C$, contact junction is bonded to the Si through the emitter, resulting the contact resistance to shunt. we obtained photovoltaic parameter such as fill factor of 76.68%, short-circuit current of $40.2mA/cm^2$, open-circuit voltage of 620 mV and convert efficiency of 19.11%.

• Journal of Animal Science and Technology
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• 제47권4호
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• pp.679-690
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• 2005

이 연구는 간장, 고추장 및 된장 양념을 이용한 발효 돈육의 품질 특성에 관한 것으로 돼지 뒷다리를 채취하여 $7{\time}10{\time}2$cm 크기로 자른 후 육을 동일한 비율의 소스(간장소스 T1, 고추장소스 T2, 된장소스 T3)에 침지하여 $1{\pm}1^{\circ}C$에서 10일간 발효숙성한 후 함기포장하여 $1{\pm}1^{\circ}C$에서 1, 14 및 28일 동안 저장하면서 품질 측정한 결과는 다음과 같다. pH는 T1이 저장 1일에 T2와 T3에 비해 낮았지만, 저장 14일과 28일에 현저하게 높았다(P<0.05). 보수성은 T1이 저장 1일과 28일에 T2와 T3에 비해 높았다. 전단가는 T3가 T1과 T2에 비해 낮았다. 표면 육색의 L*값은 T3가 T1과 T2에 비해 높았지만, a*와 b*값은 T2가 T1과 T3에 비해 현저하게 높았다(P<0.05). VBN은 저장 1일과 14일에 T3가 T2에 비해 낮았지만, 저장 28일에는 T1이 T2와 T3에 비해 현저하게 낮았다(P<0.05). TBARS는 저장 14일과 28일에 T3가 T1과 T2에 비해 현저하게 낮았다(P<0.05). 총균수는 저장 1일에 T1이 T2와 T3에 비해 낮았지만, 저장 14일과 28일에는 T2가 T1과 T3에 비해 현저하게 낮았다(P<0.05). 대장균 수는 저장 1일에 T1과 T3가 T2에 비해 현저하게 낮았고(P<0.05), 저장 14일과 28일에는 T2와 T3는 대장균 성장을 나타내지 않았다. 유산균 수는 T2가 T1과 T3에 비해 낮았다. 이상에서, 고추장 발효 돈육인 T2는 양념육 고유의 색을 나타내면서 미생물 성장을 지연시켰다.

• 한국전기전자재료학회논문지
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• 제25권12호
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• pp.1015-1020
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• 2012

Resistance of the front electrode is the highest proportion of the ingredients of the series resistance in crystalline silicon solar cell. While resistance of the front electrode is decreased with larger area, it induces the optical loss, causing the conversion efficiency drop. Therefore the front electrode with high aspect ratio increasing its height and decreasing is necessary for high-efficiency solar cell in considering shadowing loss and resistance of front electrode. In this paper, we used the screen printing method to form high aspect ratio electrode by multiple printing. Screen printing is the straightforward technology to establish the electrodes in silicon solar cell fabrication. The several printed front electrodes with Ag paste on silicon wafer showed the significantly increased height and slightly widen finger. As a result, the resistance of the front electrode was decreased with multiple printing even if it slightly increased the shadowing loss. We showed the improved electrical characteristics for c-Si solar cell with repeatedly printed front electrode by 0.5%. It lays a foundation for high efficiency solar cell with high aspect ratio electrode using screen printing.

• 한국신재생에너지학회:학술대회논문집
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• 한국신재생에너지학회 2010년도 춘계학술대회 초록집
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• pp.68.1-68.1
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• 2010

염료감응형 태양전지에서 가능한 광전자의 이동경로에 대해 살펴보면 빛 에너지를 흡수한 루테늄계 염료는 기저상태에서 여기상태로 전이한 후 광전자의 반도체 전도띠로 전자주입이 이루어진다. 이러한 전자 중 일부는 반도체산화물의 트랩으로의 전이와 트랩에서 염료 기저상태로의 전이가 일어나고 일부 전자는 전해질의 이온종 또는 산화된 염료와 재결합하는 현상이 일어난다. 본 연구에서는 이러한 전자의 재결합을 막고자 p형 반도체인 NiO paste를 제작하여 $TiO_2$ 광전극 층 위에 코팅하였다. 코팅된 NiO 층은 홀수용체로서 염료에 전자를 제공해 주는 역할과 동시에 $TiO_2$ 가전도대로 이동되었던 전자들이 염료의 기저상태의 홀이나 전해질로의 전자 유입이 이루어지는 전자의 재결합을 막는 방벽의 역할을 동시에 하게 된다. 제작된 염료감응형 태양전지 셀의 에너지 변환효율 특성을 알아보기 위하여 1000 W Xe Arc Lamp와 Air Mass 1.5, filter가 장착된 Thermo-Preal (USA) Solar simulator system을 사용하여 개방전압 (Voc), 광전류 (Isc), fill factor (FF), 에너지변환 효율 (${\eta}$)을 조사하였으며 광학현미경을 통해 염료의 흡착 정도를 비교해 보았다. NiO의 코팅 두께나 NiO 나노입자 크기에 따라 염료감응형태양전지에서 에너지변환효율에 미치는 영향을 조사하였다. NiO가 코팅되지 않은 $TiO_2$ 광전극과 비교해 볼 때 NiO 코팅시 Voc와 Isc의 증가로 인해 에너지변환효율이 20% 이상 향상되는 것을 볼 수 있었다.

• 신재생에너지
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• 제16권3호
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• pp.1-12
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• 2020

Shingled technology is the latest cell interconnection technology developed in the photovoltaic (PV) industry due to its reduced resistance loss, low-cost, and innovative electrically conductive adhesive (ECA). There are several advantages associated with shingled technology to develop cell to module (CTM) such as the module area enlargement, low processing temperature, and interconnection; these advantages further improves the energy yield capacity. This review paper provides valuable insight into CTM loss when cells are interconnected by shingled technology to form modules. The fill factor (FF) had improved, further reducing electrical power loss compared to the conventional module interconnection technology. The commercial PV module technology was mainly focused on different performance parameters; the module maximum power point (Pmpp), and module efficiency. The module was then subjected to anti-reflection (AR) coating and encapsulant material to absorb infrared (IR) and ultraviolet (UV) light, which can increase the overall efficiency of the shingled module by up to 24.4%. Module fabrication by shingled interconnection technology uses EGaIn paste; this enables further increases in output power under standard test conditions. Previous research has demonstrated that a total module output power of approximately 400 Wp may be achieved using shingled technology and CTM loss may be reduced to 0.03%, alongside the low cost of fabrication.

• 한국신재생에너지학회:학술대회논문집
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• 한국신재생에너지학회 2007년도 춘계학술대회
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• pp.250-253
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• 2007

An evaporated Ti/Pd/Ag contact system is most widely used to make high-efficiency silicon solar cells, however, the system is not cost effective due to expensive materials and vacuum techniques. Commercial solar cells with screen-printed contacts formed by using Ag paste suffer from a low fill factor and a high shading loss because of high contact resistance and low aspect ratio. Low-cost Ni and Cu metal contacts have been formed by using electroless plating and electroplating techniques to replace the Ti/Pd/Ag and screen-printed Ag contacts. Ni/Cu alloy is plated on a silicon substrate by electro-deposition of the alloy from an acetate electrolyte solution, and nickel-silicide formation at the interface between the silicon and the nickel enhances stability and reduces the contact resistance. It was, therefore, found that nickel-silicide was suitable for high-efficiency solar cell applications. The Ni contact was formed on the front grid pattern by electroless plating followed by anneal ing at $380{\sim}400^{\circ}C$ for $15{\sim}30$ min at $N_{2}$ gas to allow formation of a nickel-silicide in a tube furnace or a rapid thermal processing(RTP) chamber because nickel is transformed to NiSi at $380{\sim}400^{\circ}C$. The Ni plating solution is composed of a mixture of $NiCl_{2}$ as a main nickel source. Cu was electroplated on the Ni layer by using a light induced plating method. The Cu electroplating solution was made up of a commercially available acid sulfate bath and additives to reduce the stress of the copper layer. The Ni/Cu contact was found to be well suited for high-efficiency solar cells and was successfully formed by using electroless plating and electroplating, which are more cost effective than vacuum evaporation. In this paper, we investigated low-cost Ni/Cu contact formation by electroless and electroplating for crystalline silicon solar cells.

• Bulletin of the Korean Chemical Society
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• 제35권7호
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• pp.1985-1988
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• 2014

$Cu_2ZnSnSe_4$ (CZTSe) thin films were synthesized on transparent conducting oxide glass substrates via a simple, non-toxic, and low-cost process using a precursor solution paste. A three-step heating process (oxidation, sulfurization, and selenization) was employed to synthesize a CZTSe thin film as an absorber layer for use in thin-film solar cells. In particular, we focused on the effects of sulfurization conditions on CZTSe film formation. We found that sulfurization at $400^{\circ}C$ involves the formation of secondary phases such as $CuSe_2$ and $Cu_2SnSe_3$, but they gradually disappeared when the temperature was increased. The formed CZTSe thin films showed homogenous and good crystallinity with grain sizes of approximately 600 nm. A solar cell device was tentatively fabricated and showed a power conversion efficiency of 2.2% on an active area of 0.44 $cm^2$ with an open circuit voltage of 365 mV, a short current density of 20.6 $mA/cm^2$, and a fill factor of 28.7%.

• 한국지반공학회:학술대회논문집
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• 한국지반공학회 2009년도 춘계 학술발표회
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• pp.419-433
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• 2009

Pressure grouting is a common technique in geotechnical engineering to increase the stiffness and strength of the ground mass and to fill boreholes or void space in a tunnel lining and so on. Recently, the pressure grouting has been applied to a soil-nailing system which is widely used to improve slope stability. The soil-nailing design has been empirically performed in most geotechnical applications because the interaction between pressurized grouting paste and the adjacent ground mass is complicated and difficult to analyze. The purpose of this study is to analyze the increase of pullout resistance induced by pressurized grouting with the aid of performing laboratory model tests and field tests. In this paper, two main causes of pullout resistance increases induced by pressurized grouting were verified: the increase of residual stress; and the increase of coefficient of pullout friction. From the laboratory tests, it was found that residual stress in borehole increases by pressurized grouting and dilatancy angle could be estimated by cavity expansion theory using the measured wall displacements. From the field test results, the pullout resistance of soil-nailing with pressurized grouting was found to be 10% larger than that of soil-nailing with gravitational grouting, mainly caused by mean normal stress increase and dilatancy effect. So, the pullout resistance could be estimated by considering these two effects. The radial displacement increases with dilatancy angle increase and the dilatancy angle decreases with injection pressure increase. The measured pullout resistance obtained from field tests is in good agreement with the estimated one from the cavity expansion theory.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 하계학술대회 논문집 Vol.8
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• pp.192-193
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• 2007

An evaporated Ti/Pd/Ag contact system is most widely used to make high-efficiency silicon solar cells, however, the system is not cost effective due to expensive materials and vacuum techniques. Commercial solar cells with screen-printed contacts formed by using Ag paste suffer from a low fill factor and a high shading loss because of high contact resistance and low aspect ratio. Low-cost Ni and Cu metal contacts have been formed by using electro less plating and electroplating techniques to replace the Ti/Pd/Ag and screen-printed Ag contacts. Ni/Cu alloy is plated on a silicon substrate by electro-deposition of the alloy from an acetate electrolyte solution, and nickel-silicide formation at the interface between the silicon and the nickel enhances stability and reduces the contact resistance. It was, therefore, found that nickel-silicide was suitable for high-efficiency solar cell applications. Cu was electroplated on the Ni layer by using a light induced plating method. The Cu electroplating solution was made up of a commercially available acid sulfate bath and additives to reduce the stress of the copper layer. In this paper, we investigated low-cost Ni/Cu contact formation by electro less and electroplating for crystalline silicon solar cells.

• 한국건설순환자원학회논문집
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• 제5권1호
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• pp.21-28
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• 2017

최근 원자력 발전소 및 LNG 탱크의 외벽을 제작하는데 있어 강판 콘크리트(steel-plate concrete, SC)와 같은 합성형 구조모듈(steel-plate concrete panel, SCP)의 사용이 증가하고 있다. SCP는 공장에서 생산 한 후 이송되므로, 이송에 드는 비용을 줄이기 위해 경량화가 필수적이다. 이때 경량골재 콘크리트를 사용해 SCP의 내부를 채워 밀도를 낮출 수 있지만, 현재 콘크리트 배합법은 콘크리트의 품질을 확보하기 위해 경량골재의 사용량이 제한되어 경량화에 한계가 있다. 본 연구에서 제안하는 프리플레이스트 경량 콘크리트 배합법은 거푸집 내 경량골재를 먼저 채운 후(pre-packing) 그라우트를 주입하는 공법으로, 콘크리트의 품질확보 및 밀도를 낮출 수 있다. 다양한 종류의 경량골재 및 그라우트 배합을 사용해 실험을 수행하였고, 밀도 $1,600kg/m^3$, 압축강도 30MPa급 프리플레이스트 경량 콘크리트 배합비를 선정하여 SCP 시편을 제작하였다. 제작된 SCP 시편의 구조성능 시험을 위해 3점 휨 실험을 수행하였다. 고유동 콘크리트를 사용해 SCP의 내부를 채운 시편과 비교해 프리플레이스트 경량 콘크리트를 사용해 제작된 SCP 시편은 비슷한 수준의 휨 저항 성능을 보였으며 밀도가 30% 이상 낮았다. 따라서 프리플레이스트 경량 콘크리트를 사용해한 SCP 제작 시, 기존의 SCP와 비슷한 수준의 구조성능을 가지며 밀도를 낮춰 이송 비용을 감축할 수 있을 것으로 기대된다.