• 제목/요약/키워드: package material

검색결과 474건 처리시간 0.034초

탄화규소 (4H-SiC) 기반 패키지 된 2kV PiN 파워 다이오드 제작과 전기적 특성 분석 (The Fabrication of Packaged 4H-SiC 2kV power PiN diode and Its Electrical Characterization)

  • 송재열;강인호;방욱;주성재;김상철;김남균;이용재
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
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    • pp.67-68
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    • 2008
  • In this study we have developed a packaged silicon carbide power diode with blocking voltage of 2kV. PiN diodes with 7 field limiting rings (FLRs) as an edge termination were fabricated on a 4H-SiC wafer with $30{\mu}m$-thick n-epilayer with donor concentration of $1.6\times10^{15}cm^{-3}$. From packaged PiN diode testing, we obtained reverse blocking voltage of 2kV, forward voltage drop of 4.35V at 100A/$cm^2$, on-resistance of $6.6m{\Omega}cm^2$, and about 8 nanosec reverse recovery time. These properties give a potential for the power system application.

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기계학습 알고리즘을 이용한 반도체 테스트공정의 불량 예측 (Defect Prediction Using Machine Learning Algorithm in Semiconductor Test Process)

  • 장수열;조만식;조슬기;문병무
    • 한국전기전자재료학회논문지
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    • 제31권7호
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    • pp.450-454
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    • 2018
  • Because of the rapidly changing environment and high uncertainties, the semiconductor industry is in need of appropriate forecasting technology. In particular, both the cost and time in the test process are increasing because the process becomes complicated and there are more factors to consider. In this paper, we propose a prediction model that predicts a final "good" or "bad" on the basis of preconditioning test data generated in the semiconductor test process. The proposed prediction model solves the classification and regression problems that are often dealt with in the semiconductor process and constructs a reliable prediction model. We also implemented a prediction model through various machine learning algorithms. We compared the performance of the prediction models constructed through each algorithm. Actual data of the semiconductor test process was used for accurate prediction model construction and effective test verification.

무전해 니켈/금도금에서의 내부 금속층의 결함에 대한 연구 (A Study of the fracture of intermetallic layer in electroless Ni/Au plating)

  • 박수길;정승준;김재용;엄명헌;엄재석;전세호
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 1999년도 춘계학술대회 논문집
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    • pp.708-711
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    • 1999
  • The Cu/Ni/Au lamellar structure is extensively used as an under bump metallization on silicon file, and on printed circuit board(PCB) pads. Ni is plated Cu by either electroless Ni plating, or electrolytic Ni plating. Unlike the electrolytic Ni plating, the electroless Ni plating does not deposit pure Ni, but a mixture of Ni and phosphorous, because hypophosphite Is used in the chemical reaction for reducing Ni ions. The fracture crack extended at the interface between solder balls of plastic ball grid (PBGA) package and conducting pads of PCB. The fracture is duets to segregation at the interface between Ni$_3$Sn$_4$intermetallic and Ni-P layer. The XPS diffraction results of Cu/Ni/Au results of CU/Ni/AU finishs showed that the Ni was amorphous with supersaturated P. The XPS and EDXA results of the fracture surface indicated that both of the fracture occurred on the transition lesion where Sn, P and Ni concentrations changed.

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다결정 다공성 실리콘의 전계방출 특성 (Electron Emission From Porous Poly-Silicon Nano-Device for Flat Panel Display)

  • 이주원;김훈;이윤희;장진;주병권
    • 한국전기전자재료학회논문지
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    • 제16권4호
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    • pp.330-335
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    • 2003
  • This paper reports the optimum structure of the vacuum packaged Porous poly-silicon Nano-Structured (PNS) emitter. The PNS layer was obtained by electrochemical etching process into polycrystalline silicon layer in a process controlled to anodizing condition. Current-voltage studies were carried out to optimize process condition of electron emission properties as a function of anodizing condition and top electrode thickness. Also, we measured in advance the electron emission properties as a function of substrate temperature because the vacuum packaged process was performed under the condition of high temperature ambient (430$^{\circ}C$). Auger Electron Spectrometer (AES) studies shows that Au as a top-electrode was diffused to PNS layer during temperature experiments. Thus, we optimized the thickness of top-electrode in order to make the vacuum package PNS emitter. As a result, the vacuum Packaged PNS emitter was successfully emitted by optimizing process.

50.60대 여성의 라이프스타일에 따른 의복구매동기와 정보원천에 관한 연구 (A Study on the Clothing Buying Motive and Information Source according to Lifestyle Type of Women in Their 50's and 60's)

  • 한성지;김문숙
    • 복식문화연구
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    • 제10권2호
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    • pp.116-131
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    • 2002
  • The purposes of this study were to analyze the lifestyle of women in their 50's and 60's and to provide the basis for the efficient strategy of silver market by classifying women in their 50's and 60's according to lifestyle types and investigating the effect of consumers' lifestyle and demographic characteristics on consumers' clothing buying motived and information sources. In this study, a self-administered questionnaire was distributed to women in their 50's and 60's. 226 questionnaires of 350 were used in the following analysis. The data were analyzed with the SPSS package. The results of this study were as follows. First, lifestyle were analyzed to find out the underlying factors, and then the subjects were grouped according to factor scores by the cluster analysis. Four lifestyle types were defined. They were the traditional family-oriented, the ostentatious purchase, the economical material-oriented, the active economics-oriented type. Second, a consumer's buying motives and information sources in buying clothing were significantly different depending on the consumer's lifestyle. The ostentatious purchase type attached importance to impulse buying and in diversion in clothing buying motives and display in information sources. The economical material-oriented type tend to buy clothes to purchase economically during bargain sales. The active economics-oriented type attached importance to worn out clothing in buying motives.

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준 무연마제 슬러리를 아용한 Cu CMP 연구 (Study on Cu CMP by using Semi-Abrasive Free Slurry)

  • 김남훈;임종흔;엄준철;김상용;김창일;장의구
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2003년도 춘계학술대회 논문집 센서 박막재료 반도체 세라믹
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    • pp.158-161
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    • 2003
  • The primary aim of this study is to investigate new semi-abrasive free slurry including acid colloidal silica and hydrogen peroxide for copper chemical-mechanical planarization (CMP). In general, slurry for copper CMP consists of colloidal silica as an abrasive, organic acid as a complex-forming agent, hydrogen peroxide as an oxidizing agent, a film forming agent, a pH control agent and several additives. We developed new semi-abrasive free slurry (SAFS) including below 0.5% acid colloidal silica. We evaluated additives as stabilizers for hydrogen peroxide as well as accelerators in tantalum nitride CMP process. We also estimated dispersion stability and Zeta potential of the acid colloidal silica with additives. The extent of enhancement in tantalum nitride CMP was verified through anelectrochemical test. This approach may be useful for the application of single and first step copper CMP slurry with one package system.

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FTIR을 이용한 캐핑레이어의 플루오르 침투 특성 연구 (Study on Fluorine Penetration of Capping Layers using FTIR analysis)

  • 이도원;김남훈;김상용;김태형;장의구
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2004년도 하계학술대회 논문집 Vol.5 No.1
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    • pp.300-303
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    • 2004
  • To fill the gap of films for metal-to-metal space High density plasma fluorinated silicate glass (HDP FSG) is used due to various advantages. However, FSG films can have critical drawbacks such as bonding issue of top metal at package, metal contamination, metal peel-off, and so on. These problems are generally caused by fluorine penetration out of FSG film. Hence, FSG capping layers such like SRO(Silicon Rich Oxide) are required to prevent flourine penetration. In this study, their characteristics and a capability to block fluorine penetration for various FSG capping layers are investigated through FTIR analysis. FTIR graphs of both SRO using ARC chamber and SiN show that clear Si-H bonds at $2175{\sim}2300cm^{-1}$. Thus, Si-H bond at $2175{\sim}2300cm^{-1}$ of FSG capping layers lays a key role to block fluorine penetration as well as dangling bond.

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얇은 게이트 산화막 $30{\AA}$에 대한 박막특성 개선 연구 (A study on Improvement of $30{\AA}$ Ultra Thin Gate Oxide Quality)

  • 엄금용
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2004년도 하계학술대회 논문집 Vol.5 No.1
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    • pp.421-424
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    • 2004
  • As the deep sub-micron devices are recently integrated high package density, novel process method for sub $0.1{\mu}m$ devices is required to get the superior thin gate oxide characteristics and reliability. However, few have reported on the electrical quality and reliability on the thin gate oxide. In this paper I will recommand a novel shallow trench isolation structure for thin gate oxide $30{\AA}$ of deep sub-micron devices. Different from using normal LOCOS technology, novel shallow trench isolation have a unique 'inverse narrow channel effects' when the channel width of the devices is scaled down shallow trench isolation has less encroachment into the active device area. Based on the research, I could confirm the successful fabrication of shallow trench isolation(STI) structure by the SEM, in addition to thermally stable silicide process was achiever. I also obtained the decrease threshold voltage value of the channel edge and the contact resistance of $13.2[\Omega/cont.]$ at $0.3{\times}0.3{\mu}m^2$. The reliability was measured from dielectric breakdown time, shallow trench isolation structure had tile stable value of $25[%]{\sim}90[%]$ more than 55[sec].

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Y이 도핑된 ZnO의 전자상태 계산 (Calculation on Electronic State of Y-doped ZnO)

  • 이동윤;이원재;송재성;구보근;김현주
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2005년도 하계학술대회 논문집 Vol.6
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    • pp.172-173
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    • 2005
  • The electronic state of ZnO doped with Y was calculated using the density functional theory. In this study, the program used for the calculation on theoretical structures of ZnO and doped ZnO was Vienna Ab-initio Simulation Package (VASP), which is a sort of pseudo potential method. The detail of electronic structure was obtained by the descrite variational $X\alpha$ (DV-$X\alpha$) method, which is a sort of molecular orbital full potential method. The optimized crystal structures obtained by calculations were compared to the measured structure. The density of state and energy levels of dopant elements was shown and discussed in association with optical properties.

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적층형 압전 엑츄에이터를 이용한 고성능 마이크로 밸브의 제작과 그 특성 (Fabrication of a high performance microvalve using a multilayer piezoelectric actuator and its characteristics)

  • 서정호;정귀상
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2006년도 하계학술대회 논문집 Vol.7
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    • pp.390-391
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    • 2006
  • This paper describes the design, fabrication and characteristics of a micromachined piezoelectric valve utilizing a multilayer ceramic actuator (MCA). The micromachined MCA valve, which uses a buckling effect, consists of three separate structures: the MCA, the valve actuator die and the seat die. The valve seat die with 6 trenches was made, and the actuator die, which is driven by the MCA under optimized conditions, was also fabricated. After Si wafer direct bonding between the seat die and the actuator die, the MCA was also anodically bonded to the seat/actuator die structure. A polydimethylsiloxane (PDMS) sealing pad was fabricated to minimize the leak rate. Finally, the PDMS sealing pad was also bonded to the seat die and the stainless steel package. The MCA valve shows a flow rate of 9.13 sccm at an applied DC voltage of 100 V with a 50% duty cycle and a maximum non-linearity of 2.24% FS. Therefore, the fabricated MCA valve is suitable for a variety of flow control equipment, as a medical bio-system and in the automobile industry.

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