• Clinics in Shoulder and Elbow
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• v.18 no.2
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• pp.61-67
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• 2015

Background: The purposes of the study were to examine rotator cuff tendon degeneration with respect to harvesting location, to determine a rationale for debridement of the torn end, and thus, to determine adequate debridement extent. Methods: Twenty-four patients with a full-thickness rotator cuff tear were included in the study. Tendon specimens were harvested during arthroscopic rotator cuff repair from three locations; from torn ends after minimal regularization of fraying (native end group, NE group), from torn ends after complete freshening of the frayed end (freshened end group, FE group), and from the macroscopically intact portion just distal to the musculotendinous junction (musculotendinous junction group, MTJ group). Control samples were harvested from patients admitted for surgery for proximal humerus fracture. Harvested samples were evaluated using a semi-quantitative grading scale. Results: Mean total degeneration scores in the NE group ($13.3{\pm}3.21$), the FE group ($12.5{\pm}2.30$), and in the MTJ group ($10.8{\pm}3.10$) were significantly higher than those in the normal control group ($5.0{\pm}2.87$; all p<0.001). Mean total degeneration score in the NE group was significantly higher than that in the MTJ group (p=0.012), but was not from that of the FE group. Mean total degeneration score in the FE group was not significantly different from that of the MTJ group. Conclusions: Tendon degeneration exists throughout the entire tendon to the macroscopically intact portion of full-thickness rotator cuff tear. Therefore, aggressive debridement to grossly normal appearing, bleeding tendon is unnecessary for enhancing healing after repair.

• Geophysics and Geophysical Exploration
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• v.11 no.3
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• pp.167-176
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• 2008

Lau basin of the south Pacific, as an active back arc basin, is promising area bearing seafloor massive hydrothermal deposit that is located in a subduction zone between the Pacific ocean plate and Indo-Australian continental plate. We performed multi-beam bathymetry survey in the Lau basin using EM120, to find out high hydrothermal activity Bone. Fonualei Rift and Spreading Center (FRSC) and Mangatolou Triple Junction (MTJ) area were selected for precise site survey through seafloor morphology investigation. The result of surface and deep-tow magnetometer survey showed that Central Anomaly Magnetization High (CAMH) recorded which is associated with active ridge in FRSC-2 and revealed very low magnetic anomalies that can be connected to past or present high hydrothermal activity in MTJ-1 seamount area. Moreover, the physical and chemical tracers of hydrothermal vent flume, i.e., transmission, hydrogen ion concentration (pH), adenosine triphosphate (ATP), methane (CH4) by use of CTD system, showed significant anomalies in those areas. From positive vent flume results, we could conclude that these areas were or are experiencing very active volcanic activities. The acquired chimney and hydrothermal altered bed rock samples gave us confidence of the existence of massive hydrothermal deposit. Even though not to use visual exploration equipment such as ROV, DTSSS, etc., traditional marine geophysical investigation approach might be a truly cost-effective tool for exploring seafloor hydrothermal massive deposit.

• Proceedings of the Korean Magnestics Society Conference
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• 2000.09a
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• pp.33-59
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• 2000

Demonstrated uniform MR and resistance across 6 inch wafer, Demonstrated successful integration of MTJ and CMOS, Measured address access time of 8ns and read cycle time of 18ns for 256${\times}$2 arrays at 3.0V using a single transistor and MTJ for a cell

• Proceedings of the Korean Magnestics Society Conference
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• 2000.05a
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• pp.20-21
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• 2000

• Proceedings of the Korean Magnestics Society Conference
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• 2003.12a
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• pp.221-221
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• 2003

• Proceedings of the Korean Magnestics Society Conference
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• 2002.12a
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• pp.152-153
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• 2002

The report on large tunneling magnetoresistance (TMR) at room temperature in magnetic tunnel junctions (MTJ), composed of two ferromagnetic electrodes separated by a thin insulating barrier, has ignite the intensive research both from scientific and technological points of view. A simple model proposed by Juliere has explained the observed TMR surprisingly well, where the TMR is expressed in terms of the spin polarization P of the ferromagnetic electrodes. (omitted)

• Journal of the Korean Magnetics Society
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• v.12 no.2
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• pp.68-72
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• 2002

In this research, the effects of capacitance to the access time were studied at the junction area of tunneling magnetoresistance when these were used as memory devices. These results were obtained by applying electric signal input and magnetic field was not used. We applied bipolar square waves of 1MHz to the MTJ samples to obtain the results and time constant ($\tau$) calculated by observing wave responses utilizing an oscilloscope. And time constant was compared with junction area. Each part of MTJ sample, such as electrical pad, lead and contact area, was modeled as an electrical equivalent circuit based on experimental results. For the 200㎛$\times$200㎛ cell, junction capacitance was 90 pF. Also, measurement and simulation results were compared, which showed those similarity.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.386-386
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• 2012

We studied a bilateral switching device for spin transfer torque (STT-MRAM) based on 3D device simulation. Metal/P/N+or Metal/N/P+ junction device with $30{\times}30nm2$ area which is composed of one side schottky junction at Metal/P/N+ and Metal/N/P+ provides sufficient bidirectional current flow to write data by a drain induced barrier lowering (DIBL). In this work, Junction device confirmed that write current is more than 30 uA at 2 V, It is also has high on-off ratio over 105 under read operation. Junction device has good process feasibility because metal material of junction device could have been replaced by bottom layer of MTJ. Therefore, additional process to fabricate two outer terminals is not need. so, it provides simple fabrication procedures. it is expected that Metal/P/N+ or Metal/N/P+ structure with one side schottky junction will be a promising switch device for beyond 30 nm STT-MRAM.

• Journal of Magnetics
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• v.15 no.4
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• pp.185-189
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• 2010

Spin polarized tunneling through a hybrid tunnel barrier of a Spin filter (SF) based on a EuO ferro-magnetic semiconductor and an organic semiconductor (OSC) (rubrene in this case) was investigated. For quasi-magnetic tunnel junction (MTJ) structures, such as Co/rubrene/EuO/Al, we observed a strong spin filtering effect of the EuO layer exhibiting I-V curves with high spin polarization (P) of up to 99% measured at 4 K. However, a magnetoresistance (MR) value of 9% was obtained at 4.2 K. The low MR compared to the high P could be attributed to spin scattering caused by structural defects at the interface between the EuO and rubrene, due to nonstoichiometry in the EuO.

• Proceedings of the Korean Magnestics Society Conference
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• 2000.09a
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• pp.5-32
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• 2000

MRAM, High performance MRAM using MTJS demostrated, fully integrated MTJ MRAM with CMOS circuits, write time ~2.3 nsec; read time ~3 nsec, Thermally stable up to ~350 C, Switching field distibution controlled by size & shape. Magnetic Tunnel Junction Properties, Magnetoresistance: ~50% at room temperature, enhanced by thermal treatment, Negative and Positive MR by interface modification, Spin Polarization: >55% at 0.25K, Insensitive ot FM composition, Resistance $\times$ Area product, ranging from ~20 to 10$^{9}$ $\Omega$(${\mu}{\textrm}{m}$)$^{2}$, Spin valve transistor, Tunnel injected spin polarization for "hot" electrons, Decrease of MTJMR at high bias originates from anode.