Proceedings of the Korean Magnestics Society Conference (한국자기학회:학술대회 개요집)
- 2000.09a
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- Pages.5-32
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- 2000
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- 2233-9485(pISSN)
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- 2233-9574(eISSN)
Tunneling Magnetoresistance: Physics and Applications for Magnetic Random Access Memory
- Park, Stuart in (IBM Almaden Research Center, California) ;
- M. Samant (IBM Almaden Research Center, California) ;
- D. Monsma (IBM Almaden Research Center, California) ;
- L. Thomas (IBM Almaden Research Center, California) ;
- P. Rice (IBM Almaden Research Center, California) ;
- R. Scheuerlein (IBM Almaden Research Center, California) ;
- D. Abraham (IBM T.J. Watson Research Center) ;
- S. Brown (IBM T.J. Watson Research Center) ;
- J. Bucchigano (IBM T.J. Watson Research Center)
- Published : 2000.09.01
Abstract
MRAM, High performance MRAM using MTJS demostrated, fully integrated MTJ MRAM with CMOS circuits, write time ~2.3 nsec; read time ~3 nsec, Thermally stable up to ~350 C, Switching field distibution controlled by size & shape. Magnetic Tunnel Junction Properties, Magnetoresistance: ~50% at room temperature, enhanced by thermal treatment, Negative and Positive MR by interface modification, Spin Polarization: >55% at 0.25K, Insensitive ot FM composition, Resistance
Keywords