• Title/Summary/Keyword: pH resistance

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Studies on antibiotics resistance gene in Staphylococcus aureun Plasmid: Cloning of chloramphenicol resistance determinant (Staphylococcus aureus에서 분리된 plasmid상의 항생물질 저항성 인자에 관한 연구 : Chloramphenicol 저항성 인자의 클로닝)

  • 권동현;김영선;변우현
    • Korean Journal of Microbiology
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    • v.24 no.4
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    • pp.341-351
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    • 1986
  • R-plasmid(pSBK203, 2.5Mdal) conferring chloramphenicol resistance was isolated from mutiple antibiotic resistant Staphylococcus aureus D-H-1. Bacillus subtilis BD170 was transformed by this plasmid and restriction enzyme clevage sites of this plasmid were mapped for the cloning of chloramphenicol resistance gene. Taq I partial digested fragment of pSBK203(1.3kb) inserted into Cla I site of pBD9 appears to have both regulatory region for induction and structural gene for chloramphenicol resistance whereas Rsa I fragment (1.3kb, both ends are staggered away 0.1Kb from those of Taq I fragment) inserted into Sca I site of pBR322 showed constitutive expression in E. coli. Hinf I, Taq I, and Bgl II restriction enzyme recognition sites are found in both Rsa I fragment and Taq I fragment. Among these, Bgl II recognition site was associated with chloramphenicol resistance.

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Consideration on $H_2S$ Sensing Mechanism of CuO-$SnO_2$ Thick Film through the Analysis of the Temperature-Electrical Resistance Characteristics (온도-전기저항 특성 해석을 통한 CuO-$SnO_2$ 후막 소자의 $H_2S$ 감지기구 고찰)

  • 유도준;준타마키;박수잔;노보류야마조에
    • Journal of the Korean Ceramic Society
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    • v.33 no.4
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    • pp.379-384
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    • 1996
  • The H2S sensing mechanism of CuO-SnO2 was confirmed by analyzing the electrical-resistance variation with temperature under an H2S atmosphere. While the resistance of CuO-SnO2 thick film at N2+H2S atmosphere was almost invariant with change in temperature it increased with increasing temperature for air +H2S atmos-phere. This behavior was analyzed using an equation derived from a basic assumption based on the H2S sensing mechanism proposed before. the experimental results are sufficiently explained with the equation derived which showed that the H2S sensing mechanism was reasonable. The equation also gave a detailed analysis and physical meaning to the behavior of the resistance variation with change in H2S concentration.

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Low Resistivity Ohmic Ni/Si/Ni Contacts to N-Type 4H-SiC (낮은 접촉저항을 갖는 Ni/Si/Ni n형 4H-SiC의 오옴성 접합)

  • Kim C. K.;Yang S. J.;Cho N. I.;Yoo H. J.
    • The Transactions of the Korean Institute of Electrical Engineers C
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    • v.53 no.10
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    • pp.495-499
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    • 2004
  • Characteristics of ohmic Ni/Si/Ni contacts to n-type 4H-SiC are investigated systematically. The ohmic contacts were formed by annealing Ni/Si/Ni sputtered sequentially The annealings were performed at 950℃ using RTP in vacuum ambient and N₂ ambient, respectively. The specific contact resistivity(p/sub c/), sheet resistance(R/sub s/), contact resistance (R/sub c/) transfer length(L/sub T/) were calculated from resistance(R/sub T/) versus contact spacing(d) measurements obtained from TLM(transmission line method) structure. While the resulting measurement values of sample annealed at vacuum ambient were p/sub c/ = 3.8×10/sup -5/Ω㎠, R/sub c/ = 4.9 Ω and R/sub T/ = 9.8 Ω, those of sample annealed at N₂ ambient were p/sub c/ = 2.29×10/sup -4/Ω㎠, R/sub c/ = 12.9 Ω and R/sub T/ = 25.8 Ω. The physical properties of contacts were examined using XRD 3nd AES. The results showed that nickel silicide was formed on SiC and Ni was migrated into SiC. This result indicates that Ni/Si/Ni ohmic contact would be useful in high performance electronic devices.

Low Resistance SC-SJ(Shielding Connected-Super Junction) 4H-SiC UMOSFET with 3.3kV Breakdown Voltage (3.3kV 항복 전압을 갖는 저저항 SC-SJ(Shielding Connected-Super Junction) 4H-SiC UMOSFET)

  • Kim, Jung-hun;Kim, Kwang-Soo
    • Journal of IKEEE
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    • v.23 no.3
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    • pp.756-761
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    • 2019
  • In this paper, we propose SC-SJ(Shielding Connected-Super Junction) UMOSFET structure in which p-pillars of conventional 4H-SiC Super Junction UMOSFET structures are placed under the shielding region of UMOSFET. In the case of the proposed SC-SJ UMOSFET, the p-pillar and the shielding region are coexisted so that no breakdown by the electric field occurs in the oxide film, which enables the doping concentration of the pillar to be increased. As a result, the on-resistance is lowered to improve the static characteristics of the device. Through the Sentaurus TCAD simulation, the static characteristics of proposed structure and conventional structure were compared and analyzed. The SC-SJ UMOSFET achieves a 50% reduction in on-resistance compared to the conventional structure without any change in the breakdown voltage.

The effect of fluoride-containing oral rinses on the corrosion resistance of titanium alloy (Ti-6Al-4V)

  • Huang, Gui-Yue;Jiang, Heng Bo;Cha, Jung-Yul;Kim, Kwang-Mahn;Hwang, Chung-Ju
    • The korean journal of orthodontics
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    • v.47 no.5
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    • pp.306-312
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    • 2017
  • Objective: The purpose of this study was to examine the effect of commercially available fluoride-containing oral rinses on the corrosion behavior of titanium alloys, which are the main components of orthodontic miniscrews. Methods: Four commercially available oral rinses (solution A, pH 4.46/260 ppm fluoride; solution B, pH 4.41/178 ppm fluoride; solution C, pH 6.30/117 ppm fluoride; and solution D, pH 4.17/3.92 ppm fluoride) were tested on titanium alloy (Ti-6Al-4V) circular plates, and saline was used as the control. The open-circuit potential and potentiodynamic polarization of these materials were measured. Thereafter, all samples were evaluated under a field-emission scanning electron microscope. Results: Among the tested oral rinses, except solution D, the more the fluoride content was, the greater was the corrosion potential downtrend; the corrosion resistance of the titanium alloy sample was also lowered significantly (p < 0.05). Field-emission scanning electron microscopic analysis of the surface morphology of the titanium alloy samples revealed that all samples had some defects, crevices, or pitting after exposure to the oral rinses than before treatment. In particular, the samples in solution A showed the most changes. Conclusions: Commercially available oral rinses having a high fluoride concentration and a low pH may reduce the corrosion resistance of titanium alloys used in dental appliances such as orthodontic titanium miniscrews and brackets.

Characteristics of Ni/Ti/Al ohmic contact on Al-implanted 4H-SiC (Al 이온 주입된 p-type 4H-SiC에 형성된 Ni/Ti/Al ohmic contact의 특성)

  • Joo, Sung-Jae;Song, Jae-Yeol;Kang, In-Ho;Bahng, Wook;Kim, Sang-Cheol;Kim, Nam-Kyun
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2008.06a
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    • pp.208-209
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    • 2008
  • Ni/Ti/Al multilayer system was tested for low-resistance ohmic contact formation to Al-implanted p-type 4H-SiC. Compared with conventional process using Ni, Ni/Ti/Al contact shows perfect ohmic behavior, and possesses much lower contact resistance of about $2.5\times10^{-4}\Omega{\cdot}cm^2$ after $930^{\circ}C$ RTA, which is about 2 orders of magnitude smaller than that of Ni contact. Contact resistance gradually increased as the RTA temperature was lowered in the range of 840 ~ $930^{\circ}C$, and about $3.4\times10^{-4}\Omega{\cdot}cm^2$ was obtained at the lowest RTA temperature of $840^{\circ}C$. Therefore, it was shown that RTA temperature for ohmic contact formation can be lowered to at least $840^{\circ}C$ without significant compromise of contact resistance.

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Boron Doping Method Using Fiber Laser Annealing of Uniformly Deposited Amorphous Silicon Layer for IBC Solar Cells (IBC형 태양전지를 위한 균일하게 증착된 비정질 실리콘 층의 광섬유 레이저를 이용한 붕소 도핑 방법)

  • Kim, Sung-Chul;Yoon, Ki-Chan;Kyung, Do-Hyun;Lee, Young-Seok;Kwon, Tae-Young;Jung, Woo-Won;Yi, Jun-Sin
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2009.06a
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    • pp.456-456
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    • 2009
  • Boron doping on an n-type Si wafer is requisite process for IBC (Interdigitated Back Contact) solar cells. Fiber laser annealing is one of boron doping methods. For the boron doping, uniformly coated or deposited film is highly required. Plasma enhanced chemical vapor deposition (PECVD) method provides a uniform dopant film or layer which can facilitate doping. Because amorphous silicon layer absorption range for the wavelength of fiber laser does not match well for the direct annealing. In this study, to enhance thermal affection on the existing p-a-Si:H layer, a ${\mu}c$-Si:H intrinsic layer was deposited on the p-a-Si:H layer additionally by PECVD. To improve heat transfer rate to the amorphous silicon layer, and as heating both sides and protecting boron eliminating from the amorphous silicon layer. For p-a-Si:H layer with the ratio of $SiH_4$ : $B_2H_6$ : $H_2$ = 30 : 30 : 120, at $200^{\circ}C$, 50 W, 0.2 Torr for 30 minutes, and for ${\mu}c$-Si:H intrinsic layer, $SiH_4$ : $H_2$ = 10 : 300, at $200^{\circ}C$, 30 W, 0.5 Torr for 60 minutes, 2 cm $\times$ 2 cm size wafers were used. In consequence of comparing the results of lifetime measurement and sheet resistance relation, the laser condition set of 20 ~ 27 % of power, 150 ~ 160 kHz, 20 ~ 50 mm/s of marking speed, and $10\;{\sim}\;50 {\mu}m$ spacing with continuous wave mode of scanner lens showed the correlation between lifetime and sheet resistance as $100\;{\Omega}/sq$ and $11.8\;{\mu}s$ vs. $17\;{\Omega}/sq$ and $8.2\;{\mu}s$. Comparing to the singly deposited p-a-Si:H layer case, the additional ${\mu}c$-Si:H layer for doping resulted in no trade-offs, but showed slight improvement of both lifetime and sheet resistance, however sheet resistance might be confined by the additional intrinsic layer. This might come from the ineffective crystallization of amorphous silicon layer. For the additional layer case, lifetime and sheet resistance were measured as $84.8\;{\Omega}/sq$ and $11.09\;{\mu}s$ vs. $79.8\;{\Omega}/sq$ and $11.93\;{\mu}s$. The co-existence of $n^+$layeronthesamesurfaceandeliminating the laser damage should be taken into account for an IBC solar cell structure. Heavily doped uniform boron layer by fiber laser brings not only basic and essential conditions for the beginning step of IBC solar cell fabrication processes, but also the controllable doping concentration and depth that can be established according to the deposition conditions of layers.

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pH Buffer Capacity and Acidification Resistance of Alum Paper Mill Sludge (Alum 제지슬러지의 pH 완충능과 산성화저항성)

  • Lee, In-Bog;Chang, Ki-Woon
    • Korean Journal of Soil Science and Fertilizer
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    • v.32 no.1
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    • pp.1-6
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    • 1999
  • To find the latent effect of paper mill sludges (PMS) with and without alum, and alum paper mill sludge compost(PMSC) on aluminum toxicity of crops, the pH buffer capacity and the acidification resistance index (ARI) for PMSs and PMSC were investigated, comparing to upland soil. Buffer capacities of PMS with and without alum, and PMSC were significantly higher than $2.5cmol^+kg^{-1}$ of check soil as 137, 250, and $147cmol^+kg^{-1}$, respectively. Owing to such high buffer capacity of PMS and PMSC, they showed to be well-resisted to acidification.

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A study of corrosion of welded bridge steel SWS400 in the acid-rain environment (산성비 분위기에서 교량용 강재 SWS400의 용접부 부식에 관한 연구)

  • 정원석;김정구;이병훈
    • Journal of Welding and Joining
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    • v.15 no.5
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    • pp.124-133
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    • 1997
  • Corrosion behavior of welded SWS400 steel used for bridges was studied in a range of the acid-rain environment using immersion, potentiodynamic polartization, polarization resistance, and galvanic corrosion tests. The SWS400 steel exhibited active corrosion behavior in the range of acid-rain environment, i.e. no passivation. As the results of immersion corrosion test, Tafel extrapolation method, and polarization resistance measurement, the average corrosion rats of the steels were 0.31-0.72 mm/year in the pH of 4-5, and 0.17 mm/yera in the pH 6, respectively. The steel showed a resistance to corrosion in the pH 6. The observed active behavior of SWS400 steel in chloride-containing environment indicated that the chloride ions exerts a detrimental influence on the formation of passive films. Galvanic corrosion was observed between the weld and the base metals because the weld is anodic to the base metal.

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Antibiotic Resistant Pattern of Helicobacter Pylori Infection Based on Molecular Tests in Laos

  • Vannarath, Sengdao;Vilaichone, Ratha-korn;Rasachak, Bouachanh;Mairiang, Pisaln;Yamaoka, Yoshio;Mahachai, Varocha
    • Asian Pacific Journal of Cancer Prevention
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    • v.17 no.1
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    • pp.285-287
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    • 2016
  • Background: The efficacy of standard treatment of Helicobacter pylori (H. pylori) is declining because of antibiotic resistance. Clarithromycin resistance is also increasing in many Asian countries. The aim of this study was to determine the antibiotic susceptibility patterns of H. pylori infection and clinical association in Laos. Materials and Methods: A total of 329 Lao dyspeptic patients who underwent gastroscopy at Mahosot Hospital, Vientiane, Laos during December 2010-March 2012 were enrolled in this study. During gastroscopy, 4 biopsies were collected (2 each from the antrum and body) for CLO-test and histopathology. Only the positive CLO-test gastric tissues was stored at $-80^{\circ}C$ in a freezer until DNA was extracted and a GenoType$^{(R)}$HelicoDR test was conducted for detecting mutations in the rrl gene encoding 23S rRNA (clarithromycin resistance) and mutations in gyrA gene (fluoroquinolone resistance). Results: Of the total, 119 Lao patients (36.2%) were infected with H. pylori including 59 males (49.6%) and 60 females (50.4%) with a mean age of 46 years. Clarithromycin and fluoroquinolone resistance of H. pylori infection was demonstrated in 15 (12.6%) and 16 strains (13.4%) respectively. In clarithromycin resistance, the number of patients who had education above primary school and $BMI{\geq}25kg/m^2$ were significantly higher than those who had education below primary school and BMI<$25kg/m^2$ (23.1% vs 7.5%, P-value= 0.036 and 20.5% vs 8%, P-value= 0.048, respectively). In fluoroquinolone resistance, the number of lowland Lao was significantly higher than those of non-lowland (highland and midland) Lao ethnic groups (16.7% vs 0%, P-value= 0.039). Conclusions: H. pylori infections remain common in Laos. Clarithromycin and fluoroquinolone resistance with H. pylori infection are growing problems. Education above primary school and $BMI{\geq}25kg/m^2$ might be predictors for clarithromycin resistance and lowland Lao ethnicity might be predictors for fluoroquinolone resistance with H. pylori infection in Laos.