• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 추계학술대회 논문집
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• pp.126-129
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• 2001

A p-n junction was obtained by the deposition of an n-type ZnO thin film on a p-type Zn-doped InP substrate. The Zn-doped InP substrate has been made by the diffusion of Zn with sealed ampoule technique. The ZnO deposition process ws performed by pulsed laser deposition (PLD). The p-n junction was formed and showed a typical I-V characteristic. We will also discuss about the realization of an ultraviolet light-emitting diode (LED). The structure of n-ZnO/p-Zn-doped InP could be a good candidate for the realization of an ultraviolet light-emitting diode or an ultraviolet laser diode.

• 대한수학회지
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• 제48권2호
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• pp.397-420
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• 2011

In this paper we study the structure of closed weakly dense ideals in Privalov spaces $N^p$ (1 < p < $\infty$) of holomorphic functions on the disk $\mathbb{D}$ : |z| < 1. The space $N^p$ with the topology given by Stoll's metric [21] becomes an F-algebra. N. Mochizuki [16] proved that a closed ideal in $N^p$ is a principal ideal generated by an inner function. Consequently, a closed subspace E of $N^p$ is invariant under multiplication by z if and only if it has the form $IN^p$ for some inner function I. We prove that if $\cal{M}$ is a closed ideal in $N^p$ that is dense in the weak topology of $N^p$, then $\cal{M}$ is generated by a singular inner function. On the other hand, if $S_{\mu}$ is a singular inner function whose associated singular measure $\mu$ has the modulus of continuity $O(t^{(p-1)/p})$, then we prove that the ideal $S_{\mu}N^p$ is weakly dense in $N^p$. Consequently, for such singular inner function $S_{\mu}$, the quotient space $N^p/S_{\mu}N^p$ is an F-space with trivial dual, and hence $N^p$ does not have the separation property.

• 한국인터넷방송통신학회논문지
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• 제13권6호
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• pp.221-228
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• 2013

큰 반소수 n=pq의 소인수 p,q를 나눗셈 시행법으로 직접 찾는 것은 현실적으로 거의 불가능하다. 따라서 대부분의 소인수분해 알고리즘은$a^2{\equiv}b^2$ (mod n)의 제곱합동을 찾아 p=GCD(a-b, n), q=GCD(a+b, n)의 소인수를 찾는 간접 방법을 적용하고 있다. n = pq에 대해 p와 q를 선택한 영역은 $l(p)=l(q)=l(\sqrt{n})=0.5l(n)$의 [$10{\cdots}01$, $99{\cdots}9$] 범위에서 $\sqrt{n}$을 기준으로 $10{\cdots}00$ < p < $\sqrt{n}$과 $\sqrt{n}$ < q < $99{\cdots}9$에 존재한다는 사실만이 밝혀졌다. 본 논문은 n으로 부터 획득한 정보를 이용하여 p의 범위를 보다 축소시키는 방법을 제안한다. 제안 방법은 $n=n_{LR}+n_{RL}$, $l(n_{LR})=l(n_{RL})=l(\sqrt{n})$으로 분할하여 $p_{min}=n_{LR}$, $q_{min}=n_{RL}$로 설정하는 방법을 적용하였다. 본 논문에서 제안한 n의 정보로 p의 범위를 축소하는 방법은 $\sqrt{n}$의 정보로 p의 범위 축소 방법에 비해 최소 17.79%에서 최대 90.17%의 범위 축소 효과를 얻었다.

• Journal of applied mathematics & informatics
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• 제25권1_2호
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• pp.375-382
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• 2007

We Study, firstly, the dynamics of the difference equation $x_{n+1}\;=\;{\alpha}\;+\;{\frac{x^p_n}{x^p_{n-1}}}$, with $p\;{\in}\;(0,\;1)\;and\;{\alpha}\;{\in}\;[0,\;{\infty})$. Then, we generalize our results to the (k + 1)th order difference equation $x_{n+1}\;=\;{\alpha}\;+\;{\frac{x^p_n}{nx^p_{n-k}}$, $k\;=\;2,\;3,\;{\cdots}$ with positive initial conditions.

• Korean Journal of Mathematics
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• 제7권2호
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• pp.227-233
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• 1999

Let $k$ be a real abelian field and $k_{\infty}={\bigcup}_{n{\geq}0}k_n$ be its $\mathbb{Z}_p$-extension for an odd prime $p$. For each $n{\geq}0$, we denote the class number of $k_n$ by $h_n$. The following is a well known theorem: Theorem. Suppose $p$ remains inert in $k$ and the prime ideal of $k$ above $p$ totally ramifies in $k_{\infty}$. Then $p{\nmid}h_0$ if and only if $p{\nmid}h_n$ for all $n{\geq}0$. The aim of this paper is to generalize above theorem: Theorem 1. Suppose $H^1(G_n,E_n){\simeq}(\mathbb{Z}/p^n\mathbb{Z})^l$, where $l$ is the number of prime ideals of $k$ above $p$. Then $p{\nmid}h_0$ if and only if $p{\nmid}h_n$. Theorem 2. Let $k$ be a real quadratic field. Suppose that $H^1(G_1,E_1){\simeq}(\mathbb{Z}/p\mathbb{Z})^l$. Then $p{\nmid}h_0$ if and only if $p{\nmid}h_n$ for all $n{\geq}0$.

• 전기전자학회논문지
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• 제24권4호
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• pp.1167-1171
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• 2020

본 연구에서는 상시불통형 p-GaN 전력반도체소자의 신뢰성 향상을 위해 p-GaN 게이트막 내부의 전계를 완화하고자 p-GaN 게이트 도핑농도의 계조화를 제안한다. TCAD 시뮬레이션으로 균일한 도핑농도를 갖는 소자와 문턱전압과 출력 전류 특성이 동일하도록 p형 농도를 계조화하고 최적화하였다. p-GaN 게이트층에서의 전계 감소로 소자의 게이트 신뢰성이 개선될 수 있을 것으로 판단된다.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2010년도 춘계학술발표대회
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• pp.56.2-56.2
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• 2010

An improvement in the optical and structural properties of p-GaN was obtained by using antimony (Sb) as a surfactant during p-GaN growth. Two different growth temperatures of p-GaN such as $1030^{\circ}C$ and $900^{\circ}C$ were considered. Keeping the growth conditions for p-GaN constant, Sb was introduced during p-GaN growth while varying the [Sb]/([Ga]+[Mg]) flow ratio. [Sb]/([Ga]+[Mg]) flow ratio will be denoted as SGM ratio for convenience. SGM ratio of 0, 0.015 and 0.03% were considered for high temperature p-GaN growth. SGM ratio of 0, 0.005, 0.01 and 0.02% were considered for low temperature p-GaN growth. The analysis results suggest that using the optimum SGM ratio during p-GaN growth greatly improves the optical and structural properties of the p-GaN.

• 한국정보전자통신기술학회논문지
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• 제16권4호
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• pp.180-186
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• 2023

본 논문은 4세대 VNAND 공정으로 만들어진 고전압 SiO2 절연층 nMOSFET의 n⁺ 및 p⁺ poly-Si 게이트에서의 positive bias temperature instability(PBTI) 열화에 대해 비교하고 각각의 메커니즘에 대해 분석한다. 게이트 전극 물질의 차이로 인한 절연층의 전계 차이 때문에 n⁺/nMOSFET의 열화가 p⁺/nMOSFET의 열화보다 더 클 것이라는 예상과 다르게 오히려 p⁺/nMOSFET의 열화가 더 크게 측정되었다. 원인을 분석하기 위해 각각의 경우에 대해 interface state와 oxide charge를 각각 추출하였고, 캐리어 분리 기법으로 전하의 주입과 포획 메커니즘을 분석하였다. 그 결과, p⁺ poly-Si 게이트에 의한 정공 주입 및 포획이 p⁺/nMOSFET의 열화를 가속시킴을 확인하였다.

• Journal of the korean society of oceanography
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• 제34권2호
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• pp.86-94
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• 1999

An investigation was conducted to determine limiting nutrients in the bay systems of the southern coastal area of Korea. The elemental composition of C, N, and P in suspended particulate matter was monitored nearly monthly in Chinhae and Koje Bays and seasonally in Deukryang Bay for 2 years. Atomic C:N ratio in particulate matter ranges from 4.3 to 9.6, typical of marine phytoplankton. C:P and N:P ratios vary from the Redfield ratio to 229 (C:P) and 37 (N:P). A constant C:N ratio of 6.87 from regression of particulate C and N concentrations demonstrates that the particulate matter in the systems originates from primary production. C:P and N:P ratios from regression of C on P and N on P are well associated with changes in salinity. The low N:P ratio of 13.1 implies N limitation in the environments of the systems. This seems to result from the low N:P ratio of nutrients released across sediment-water interface. Phytoplankton response, expressed here as the increase of chlorophyll a, to N addition also verifies N limitation for phytoplankton communities. In heavy rainfall season (from June to September), the addition of excessive N via streams into the stratified coastal water proliferates phytoplankton greatly. During the phytoplankton blooms, C:P and N:P ratios are much higher than the Redfield ratio, implying P limitation. This results from the high N:P ratio in nutrients supplied from stream waters. Strong stratification during the blooms also interrupts the supply of nutrients, particularly p, from bottom waters. Dependent upon precipitation, this tendency shows great inter-annual variation.

• 호남수학학술지
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• 제29권4호
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• pp.535-542
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• 2007

In this paper, for each natural number n, we construct a polynomial $p_n$(x) of degree n so that $p_n(x)\;\leq\;p_{n+1}(x)\;\leq\;e^x$ for $x\;\geq\;-1$. These polynomials are optimal in the sense that if p(x) is a polynomial of degree n with $p_{n-l}(x)\;\leq\;p(x)\;\leq\;e^x$, then $p(x)\;\leq\;p_n(x)$.