• Title/Summary/Keyword: p-n 접합

Search Result 351, Processing Time 0.028 seconds

Fatigue Life Evaluation of Spot Weldment Using DCPDM (직류전위차법을 이용한 점용접부의 피로수명 평가)

  • 유효선;이송인;권일현;안병국
    • Journal of Welding and Joining
    • /
    • v.19 no.1
    • /
    • pp.58-64
    • /
    • 2001
  • The initiation and propagation lives of fatigue crack were studied for spot weldments composed of cold rolled steel plates(SPC$\times$SPC) and galvanized steel plates(GA$\times$GA) using DC potential drop method(DCPDM). Through the various test results, it was known that the fatigue crack initiation and propagation behaviors in all specimens could be definitely detected by DCPDM. The fatigue crack initiation life( $N_{i}$) detected by DCPDM in SPC$\times$SPC and GA$\times$GA spot weldments increased as the welding current and the nugget diameter( $N_{d}$) increased. The fatigue crack propagation life($\Delta$ $N_{f-i}$) declined as the difference of $N_{i}$ and the fatigue fracture life( $N_{f}$) also increased according to the decrease of fatigue load, $\Delta$P and the increase of nugget diameter. In the same spot weldments, the increase of nugget diameter came to increase fatigue crack propagation life owing to a decrease of stress concentration in front of nugget, especially the increasing extent for GA$\times$GA spot weldment was very high. In the welding current 6kA, $N_{f}$ for GA$\times$GA spot weldment decreased more than that of SPC$\times$SPC specimen due to zinc layer coated in steel plate and undersized nugget diameter. On the other hand, in 8kA and 10kA, the GA$\times$GA spot weldment showed higher $N_{f}$ in spite of lower $N_{i}$, than that of SPC$\times$SPC specimen except 3,000N fatigue load.ue load. load.d.

  • PDF

A New Coloured Substrate for the Determination of $\beta$-Glucan Degrading Enzyme from Malt and Bacillus subtilis K-4-3 (맥아와 Bacillus subtilis B-4-3의 $\beta$-Glucan 분해 효소측정을 위한 새로운 색소기질)

  • 이성택
    • Microbiology and Biotechnology Letters
    • /
    • v.16 no.2
    • /
    • pp.79-84
    • /
    • 1988
  • Dye materials and cross linking agents were used for the determination of $\beta$-glucanase activities. The objective of this study was to prepare the blue coloured substrates which are sensitive, specific and simple for the determination of $\beta$-glucanase in malt and Bacillus subtilis K-4-3 enzymes. This method is based on the principle of measuring colorimetrically the split product of coloured and cross linked substrate. The best coupling of dye stuff of $\beta$-glucan was cibacron blue 3G-A and the colour released can suitably be measured at 623nm. Optimal concentration of dye and cross linking agents was 1.5g and 1.25$m\ell$ under 0.1N NaOH. The sensitivity comparison proved that the stained $\beta$-glucan method is much more sensitive than the DNS method to determine reducing sugar released by the enzyme.

  • PDF

Optimum Design of Junctionless MOSFET Based on Silicon Nanowire Structure and Analysis on Basic RF Characteristics (실리콘 나노 와이어 기반의 무접합 MOSFET의 최적 설계 및 기본적인 고주파 특성 분석)

  • Cha, Seong-Jae;Kim, Kyung-Rok;Park, Byung-Gook;Rang, In-Man
    • Journal of the Institute of Electronics Engineers of Korea SD
    • /
    • v.47 no.10
    • /
    • pp.14-22
    • /
    • 2010
  • The source/channel/drain regions are formed by ion implantation with different dopant types of $n^+/p^{(+)}/n^+$ in the fabrication of the conventional n-type metal-oxide-semiconductor field effect transistor(NMOSFET). In implementing the ultra-small devices with channel length of sub-30 nm, in order to achieve the designed effective channel length accurately, low thermal budget should be considered in the fabrication processes for minimizing the lateral diffusion of dopants although the implanted ions should be activated as completely as possible for higher on-current level. Junctionless (JL) MOSFETs fully capable of the the conventional NMOSFET operations without p-type channel for enlarging the process margin are under researches. In this paper, the optimum design of the JL MOSFET based on silicon nanowire (SNW) structure is carried out by 3-D device simulation and the basic radio frequency (RF) characteristics such as conductance, maximum oscillation frequency($f_{max}$), current gain cut-off frequency($f_T$) for the optimized device. The channel length was 30 run and the design variables were the channel doping concentration and SNW radius. For the optimally designed JL SNW NMOSFET, $f_T$ and $f_{max}$ high as 367.5 GHz and 602.5 GHz could be obtained, respectively, at the operating bias condition $V_{GS}$ = $V_{DS}$ = 1.0 V).

Distal Myopathy with Rimmed Vacuoles Confirmed by Whole Exome Sequencing (Rimmed vacuole을 가진 원위부 근육병증의 전체 엑솜 서열분석을 이용한 유전적 원인 규명)

  • Seo, Seong Don;Park, Hyung Jun;Song, Hyun Seok;Kim, Hye Jin;Park, Jin-Mo;Hong, Young Bin;Chung, Ki Wha;Choi, Byung-Ok
    • Journal of Life Science
    • /
    • v.24 no.3
    • /
    • pp.311-317
    • /
    • 2014
  • Distal myopathy with rimmed vacuoles (DMRV) or hereditary inclusion body myopathy 2 is an autosomal recessive muscular disorder characterized by early adult-onset weakness of distal muscles and rimmed vacuoles in muscle biopsy. Mutations in the UDP-N-acetylglucosamine 2-epimerase/N-ace-tylmannosamine kinase (GNE) gene are associated with the development of DMRV. In this study, whole exome sequencing (WES) revealed compound heterozygous GNE mutations of p.Asp176Val and p.Val572Leu in a patient with distal limb weakness. Three hundred healthy controls did not show these mutations. All other variants found in distal myopathy-relevant genes were polymorphic. These findings confirmed that the patient had DMRV. This work underscores the usefulness of WES in improving the molecular diagnosis of myopathy.

Characteristics of Non-alloyed Mo Ohmic Contacts to Laser Activated p-type SiC (레이저 활성화에 의한 p형 Sic와 비합금 Mo 오믹 접합)

  • 이형규;이창영;송지헌;최재승;이재봉;김기호;김영석;박근형
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
    • /
    • v.16 no.7
    • /
    • pp.557-563
    • /
    • 2003
  • SiC has been an useful material for the high voltage, high temperature, and high frequency devices, however, the required high process temperature to activate the implanted p-type dopants has hindered further developments. In this study, we report, for the first time, on the laser activation of implanted Al and non-alloyed Mo ohmic contacts and its application to MOSFET fabrication. The contact and sheet resistance measured from CTLM patterns have decreased by increasing laser power, and the lowest values are 3.9 $K\Omega$/$\square$ and 1.3 $\times$ 10$^{-3}$ $\Omega$-cm$^2$, respectively, at the power density of 1.45 J/cm$^2$ The n-MOSFETs fabricated on laser activated p-well exhibit well-behaved I-V characteristics and threshold voltage reduction by reverse body voltage. These results prove that the laser process for implant activation is an alternative low temperature technology applicable to SiC devices.

Effects of a Porcine MC4R Polymorphism(892G>A) on Carcass Traits in Commercial Pigs (돼지 MC4R 유전자 892G>A 다형성이 비육돈의 도체형질에 미치는 영향)

  • Han, S.H.;Lee, S.S.;Ko, M.S.;Seong, P.N.;Park, B.Y.;Cho, I.C.
    • Journal of Animal Science and Technology
    • /
    • v.49 no.5
    • /
    • pp.569-576
    • /
    • 2007
  • receptor(MC4R) gene and carcass traits was examined in randomly selected commercial pigs. A porcine MC4R gene was genotyped for Asp298Asn(nt. 892G>A) by polymerase chain reaction-restriction fragment length polymorphism(PCR-RFLP). A total of three genotypes, A/A, A/G, and G/G, were found with 28.8, 22.8, and 48.4% frequencies, respectively. In the whole population, pigs containing 892A/- showed significantly higher marbling score than those of homozygotes G/G(P<0.05). Two homozygotes, A/A and G/G showed lower in meat color score but higher in water holding capacity than those of heterozygotes A/G(P<0.01). However, the carcass weight of the barrows containing wild type -/G was significantly higher(i.e. more than 2.5kg) than those of homozygotes A/A(P<0.05). The effects of each genotype on carcass traits in the gilts were similar to those of the whole population, but not in barrows, suggesting an unknown sex-related effect on carcass traits. This study suggested that the genotype MC4R A/- could improve the meat quality in the commercial pig production. However, since the genetic polymorphism of MC4R gene differentially affected the carcass traits in sex-related manner, therefore, both parameters, the sex and genotype, should be considered for marker-assisted selection in commercial pig production.

박막 실리콘 태양전지의 도핑층 광손실 제거 기술

  • Baek, Seung-Jae;Pang, Ryang;Park, Sang-Il;Im, Goeng-Su
    • Proceedings of the Korean Vacuum Society Conference
    • /
    • 2012.08a
    • /
    • pp.194-195
    • /
    • 2012
  • 박막 실리콘 태양전지에 입사한 빛 중 흡수층인 진성 비정질 실리콘층(i-a-Si)에 흡수된 빛은 출력으로 변환되나, 기타의 층에서 흡수된 빛은 손실 성분이 된다. 이 중 흡수 손실이 큰 층은 도핑 층(p-a-SiC 및 n-a-Si)들인데, 이 들의 흡수 손실을 측정된 광학함수를 이용해 계산해 보면 Fig. 1과 같이 나타난다. p-a-SiC은 광 입사부에 위치하여 단파장 영역의 흡수 손실을 일으키고, n-a-Si 은 태양전지의 후면에 위치하여 장파장 영역의 흡수손실을 일으킨다. 이러한 도핑층에서의 흡수 손실을 제거 또는 개선하기 위해 도핑층의 재료를 기존 재료보다 광학적 밴드갭이 큰 재료로 대체하여 개선하는 방안에 대해 논하고자 한다. 금속 산화물의 밴드갭은 실리콘 화합물에 비하여 대체로 큰 값을 가지기 때문에 이를 기존의 실리콘 화합물 대신으로 사용한다면 광학적 흡수 손실을 효과적으로 줄일 수 있다. 단, 이때 태양전지의 광 전압을 결정하는 인자가 p층과 n층 사이의 일함수 차이에 해당하므로, p층의 대체층으로 사용 가능한 금속 산화물은 일함수가 큰(>5 eV) 재료 중에서 선택하는 것이 적합하며, n층의 대체층으로 사용 가능한 금속 산화물은 일함수가 작은(< 4.2 eV) 재료 중에서 선택하는 것이 적합하다. Table 1에서 p층과 n층 대체용 금속산화물의 후보들을 정리하였다. 먼저 도핑층에서의 광 흡수가 광손실이 될 수 밖에 없는 물리적 근거에 대해서 논하고, 그 실험적인 증명을 제시한다. 이러한 개념을 바탕으로 도핑층의 내부 전기장의 방향을 제어하여 전자-정공쌍을 분리 수집하는 방법을 실험적으로 구현하였다. 이어서 금속 산화물을 부분적으로 대체하여 흡수 손실을 개선하는 방안을 제시한다. WOx, NiOx, N doped ZnO 등을 적용하여 그 효과를 비교 검토하였다. 끝으로 금속산화믈 대체 또는 쇼트키 접합을 적용하여 도핑층의 광 흡수를 줄이고 효율을 향상하는 방안을 제시한다. 그 사례로서 WOx, MoOx, LiF/Al의 적용결과를 살펴보고 추가 개선방안에 대해 토의할 것이다. 결론적으로 광학적 밴드갭이 큰 재료를 도핑층 대신 사용하여 흡수 손실을 줄이는 것이 가능하다는 것을 알 수 있고, 이 때 일함수 조건이 만족이 되면 광 전압의 손실도 최소화할 수 있다는 점을 확인할 수 있었다. 현재까지 연구의 한계와 문제점을 정리하고, 추가 연구에 의한 개선 가능성 및 실용화 개발과의 연관관계 등을 제시할 것이다.

  • PDF

Fabrication and Characteristics of High Efficiency Silicon PERL (passivated emitter and rear locally-diffused cell) Solar Cells (PERL (passivated emitter and rear locally-diffused cell) 방식을 이용한 고효율 Si 태양전지의 제작 및 특성)

  • Kwon, Oh-Joon;Jeoung, Hun;Nam, Ki-Hong;Kim, Yeung-Woo;Bae, Seung-Chun;Park, Sung-Keoun;Kwon, Sung-Yeol;Kim, Woo-Hyun;Kim, Ki-Wan
    • Journal of Sensor Science and Technology
    • /
    • v.8 no.3
    • /
    • pp.283-290
    • /
    • 1999
  • The $n^+/p/p^+$ junction PERL solar cell of $0.1{\sim}2{\Omega}{\cdot}cm$ (100) p type silicon wafer was fabricated through the following steps; that is, wafer cutting, inverted pyramidally textured surfaces etching by KOH, phosphorus and boron diffusion, anti-reflection coating, grid formation and contact annealing. At this time, the optical characteristics of device surface and the efficiency of doping concentration for resistivity were investigated. And diffusion depth and doping concentration for n+ doping were simulated by silvaco program. Then their results were compared with measured results. Under the illumination of AM (air mass)1.5, $100\;mW/cm^2$ $I_{sc}$, $V_{oc}$, fill factor and the conversion efficiency were 43mA, 0.6 V, 0.62. and 16% respectively.

  • PDF

Performance Characteristics of p-i-n Type Organic Thin-film Photovoltaic Cell with CuPc: $F_4$-TCNQ Hole Transport Layer (CuPc: $F_4$-TCNQ 정공 수송층이 도입된 P-i-n형 유기 박막 태양전지의 성능 특성 연구)

  • Park, So-Hyun;Kang, Hak-Su;Senthilkumar, Natarajan;Park, Dae-Won;Choe, Young-Son
    • Polymer(Korea)
    • /
    • v.33 no.3
    • /
    • pp.191-197
    • /
    • 2009
  • We have investigated the effect of strong p-type organic semiconductor $F_4$-TCNQ-doped CuPc hole transport layer on the performance of p-i-n type bulk heterojunction photovoltaic device with ITO/PEDOT:PSS/CuPc: $F_4$-TCNQ(5 wt%)/CuPc:C60(blending ratio l:l)/C60/BCP/LiF/Al, architecture fabricated via vacuum deposition process, and have evaluated the J-V characteristics, short-circuit current ($J_{sc}$), open-circuit voltage($V_{oc}$), fill factor(FF), and power conversion efficiency(${\eta}_e$) of the device. By doping $F_4$-TCNQ into CuPc hole transport layer, increased absorption intensity in absorption spectra, uniform dispersion of organic molecules in the layer, surface uniformity of the layer, and enhanced injection currents improved the current photovoltaic device with power conversion efficiency(${\eta}_e$) of 0.16%, which is still low value compared to silicone solar cell indicating that many efforts should be made to improve organic photovoltaic devices.

Gas Sensing Mechanism of CuO/ZnO Heterojunction Gas Sensor (이종접합 가스센서의 가스감지기구)

  • Yi, S.H.;Chu, G.S.;Park, J.H.;Sung, Y.K.
    • Proceedings of the KIEE Conference
    • /
    • 1995.07c
    • /
    • pp.1114-1116
    • /
    • 1995
  • P/N(CuO/ZnO) Heterojunction gas sensors were made by 2-step sintering methods and its gas sensing property was measured by varying the injected gases and the operating temperatures. As the applied voltage was increased in air ambients, the current-voltage characteristics shown the ohmic properties. However, when the CO gas ambients, 500 ppm at $200^{\circ}C$, the current-voltage characteristics behaves like a rectifying diode s after 3 mins later and its conduction mechanism is discussed qualitatively for the first times.

  • PDF