• Proceedings of the Korean Magnestics Society Conference
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• 2002.12a
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• pp.156-157
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• 2002

자성체, 반도체의 계면을 조절하여 스핀 산란을 없애는 방법으로 A12O3를 이용하여, 스핀의 정보를 잃지 않고 반도체에 주입할 수 있는 방법을 연구하였다. 반도체에 월형 편광된 laser를 조사하여 내부에서 여기한 전자 spin이 자성체 내부로 흘러가면서 일어나는 현상을 관측한 것이다[1], [2]. 일반적인 반도체와 금속간의 접합을 구성한 schottky-barrier 특성이 아닌 접합 사이에 인위적으로 barrier를 형성하여 그 특성을 관측하였다. n-type 과 p-type의 시료를 제작하여 I-V 특성을 온도에 따라 I-V 특성 측정하였다. (중략)

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.107-107
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• 2012

본 연구에서는 GaAs p-i-n 태양전지구조에 InAs 양자점을 삽입하여 계면의 전기장 변화를 Photoreflectance (PR) 방법으로 연구하였다. InAs/GaAs 양자점 태양전지구조는 n-GaAs 기판위에 p-i-n 구조의 태양전지를 분자선박막성장 장치를 이용하여 제작하였다. GaAs p-i-n 태양전지와 p-QD(i)-n 양자점 태양전지를 제작하여 계면전기장의 변화를 PR 신호에 나타난 Franz-Keldysh oscillation (FKO)으로부터 측정하였다. 기본적인 p-i-n 구조에서 두 가지 전기장성분을 검출 하였고 양자점 태양전지구조에서는 39 kV/cm 이상의 내부전기장이 존재함을 관측하였다. 이러한 내부전기장은 양자점 주변에 형성된 국소전기장의 효과로 추측하였다. 아울러 양자점을 AlGaAs 양자우물 구조에 삽입하여 케리어의 구속에 의한 FKO의 변화를 관측하였으며 양자점 태양전지의 구조적 변화에 따른 효율을 측정하여 비교 분석하였다.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.13 no.11
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• pp.908-913
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• 2000

CoSi$_2$/p+/n diodes(bilayer diodes) were fabricated by using epitaxial CoSi$_2$grown from Co/Ti bilayer as a diffusion source. The I-V characteristics of p+/n diodes were measured and compared with those of diode made from Co monolayer (monolayer diode). Monolayer diodes showed typical p+n junction characteristics with the leakage current of as low as 10$^{-12}$ A and forward current 6-orders higher than the leakage current, when drive-in annealed at 90$0^{\circ}C$ for 20 sec.. On the other hand, bilayer diodes showed the Schottky-like behaviors with forward currents rather higher than those of monolyer diodes, but with too high leakage currents, when drive-in annealed at $700^{\circ}C$ or higher. However, when the annealing temperature was lowered to $700^{\circ}C$ and annealing time was increased to 60 sec., the leakage current was reduced to 10$^{-11}$ A and thus sho3wed typical diode characteristics. The high leakage currents for diodes annealed at $700^{\circ}C$ or higher was attributed to Shannon contacts formed due to unremoved Co-Ti-Si precipitates. But when annealed at 50$0^{\circ}C$, B ions diffused in the direction of the surface layer, and thus the leakage currents were reduced by removing Shannon contacts.

• Applied Microscopy
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• v.40 no.2
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• pp.53-64
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• 2010

Glutamate receptors may play a critical role in the refinement of developing synapses. The lateral superior olivary nucleus (LSO)-medial nucleus of trapezoid body (MNTB) synaptic transmission in the mammalian auditory brain stem mediate many excitatory transmitters such as glutamate, which is a useful model to study excitatory synaptic development. Hearing deficits are often accompanied by changes in the synaptic organization such as excitatory or inhibitory circuits as well as anatomical changes. Owing to this, circling mouse whose cochlea degenerates spontaneously after birth, is an excellent animal model to study deafness pathophysiology. However, little is known about the development regulation of the subunits composing these receptors in circling mouse. Thus, we used immunohistochemical method to compare the N-Methyl-D-aspartate receptor (NMDA receptor) NR1, NR2A, NR2B distribution in the LSO which project glutamergic excitatory input into the auditory brainstem, in circling mouse of postnatal (p) 7 and 16, which have spontaneous mutation in the inner ear, with wild-type mouse. The relative NMDAR1 immunoreactive density of the LSO in circling mouse p7 was $128.67\pm8.87$ in wild-type, $111.06\pm8.04$ in heterozygote, and $108.09\pm5.94$ in homozygote. The density of p16 circling mouse was $43.83\pm10.49$ in wild-type, $40\pm13.88$ in heterozygote, and $55.96\pm17.35$ in homozygote. The relative NMDAR2A immunoreactive density of LSO in circling mouse p7 was $97.97\pm9.71$ in wild-type, $102.87\pm9.30$ in heterozygote, and $106.85\pm5.79$ in homozygote. The density of LSO in p16 circling was $47.4\pm20.6$ in wild-type, $43.9\pm17.5$ in heterozygote, and $49.2\pm20.1$ in homozygote. The relative NMDAR2B immunoreactive density of LSO in circling mouse p7 was $109.04\pm6.77$ in wild-type, $106.43\pm10.24$ in heterozygote, and $105.98\pm4.10$ in homozygote. the density of LSO in p16 circling mouse was $101.47\pm11.5$ in wild-type, $91.47\pm14.81$ in heterozygote, and $93.93\pm15.71$ in homozygote. These results reveal alteration of NMDAR immunoreactivity in LSO of p7 and p16 circling mouse. The results of the present study are likely to be relevant to understand the central change underlying human hereditary deafness.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.102-102
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• 2011

ZnO는 우수한 전기적, 광학적 특성으로 LED, solar cell 등과 같은 광전자소자의 응용을 목적으로 많은 연구가 진행되고 있다. 최근에는 ZnO 동종접합을 만들고자 많은 연구가 진행되고 있으나 p형 ZnO의 낮은 용해성과 높은 불순물에 따른 제조의 어려움으로 현재까지는 n형 ZnO만이 전도성 기판 위에 성장되어 응용되고 있다. 전도성 기판으로서 Si의 경우 낮은 가격, 공정의 용이함 등으로 GaN, SiC 등의 기판에 비하여 많은 응용이 가능하다. 따라서 본 연구에서는 전기화학증착법을 이용하여 p-n 접합을 형성하기 위하여 p형 Si 기판 위에 n형 ZnO 나노구조를 성장하고 그 특성을 분석하였다. 전기화학증착법은 낮은 온도 및 간단한 공정과정으로 빠른 성장 속도를 가지고 나노구조를 효과적으로 성장할 수 있는 방식이다. Seed 층 및 열처리에 따른 n형 ZnO 나노구조의 성장 특성 분석을 위하여 radio frequency (RF) magnetron 스퍼터를 사용하여 ZnO 및 Al doped ZnO (AZO) seed 층을 p형 Si 기판 위에 증착 후 다양한 온도로 열처리를 수행하였다. 질산아연(zinc nitrate)과 HMT가 희석된 용액에 KCl 촉매를 일정량 첨가한 후 다양한 공정 온도, 공정시간 및 질산아연의 몰농도를 변화시켜 n형 ZnO 나노구조를 성장하였다. 성장된 나노구조의 특성은 field emission scanning microscopy (FE-SEM), energy dispersive X-ray (EDX), photoluminescence (PL) 등의 장비를 사용하여 구조적, 광학적 특성을 분석하였다.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.18 no.6
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• pp.37-43
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• 2017

This review investigates the basic principle of physical interactions and failure mechanisms introduced in the materials and inner parts of semiconducting components under electromagnetic pulses (EMPs). The transfer process of EMPs at the semiconducting component level can be explained based on three layer structures (air, dielectric, and conductor layers). The theoretically absorbed energy can be predicted by the complex reflection coefficient. The main failure mechanisms of semiconductor components are also described based on the Joule heating energy generated by the coupling between materials and the applied EMPs. Breakdown of the P-N junction, burnout of the circuit pattern in the semiconductor chip, and damage to connecting wires between the lead frame and semiconducting chips can result from dielectric heating and eddy current loss due to electric and magnetic fields. To summarize, the EMPs transferred to the semiconductor components interact with the chip material in a semiconductor, and dipolar polarization and ionic conduction happen at the same time. Destruction of the P-N junction can result from excessive reverse voltage. Further EMP research at the semiconducting component level is needed to improve the reliability and susceptibility of electric and electronic systems.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.30A no.11
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• pp.113-121
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• 1993

In the formation of the shallow p$^{+}$-n junction, the preamorphization method by As$^{+}$ ions was applied in order to avoid the boron channeling effect which is occured during the B$^{+}$ implantation especially with low energy. By As$^{+}$ pre-implant with 60KeV energy and 2*10$^{14}$ cm$^{-2}$ dose, the channelinf of B$^{+}$ ions implanted with 10keV/1.5*10$^{14}$ cm$^{-2}$ can be avoded completely. After the RTA of 1050.deg. C and 10sec, the junction depth was 0.14.mu.m, the leakage current was 20nA/cm$^{2}$(at-5V bias) and the sheet resistance was 107.OMEGA./ㅁ. And the preamorphized Si layer was changed into the perfect crystal si after the RTA.r the RTA.

• Journal of IKEEE
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• v.6 no.2 s.11
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• pp.136-145
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• 2002

The simulator for the analysis of the lattice temperature under the steady-state condition is developed. The heat flow equation using the Slotboom variables is discretized and the integration method of the thermal conductivity without using the numerical analysis method is presented. The simulations are executed on the $N^+P$ junction diode and BJT to verify the proposed method. The average relative error of the lattice temperature of $N^+P$ diode compared with DAVINCI is 2% when 1.4[V] forward bias is applied and the average relative error of the lattice temperature of BJT compared with MEDICI is 3% when 5.0[V] is applied to the collector contact and 0.5[V] is applied to the base contact. BANDIS using the proposed method of integration of thermal conductivity needs 3.45 times of matrix solution to solve one bias step and DAVINCI needs 5.1 times of matrix solution MEDICI needs 4.3 times of matrix solution.

• 한국신재생에너지학회:학술대회논문집
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• 2005.06a
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• pp.196-200
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• 2005

In this work, we investigated simple Aㅣ/TCO/a-Si:H(n)/c-Si(p)/Al hetero-junction solar cells prepared by low temperature processes, unlike conventional thermal diffused c-Si solar cells. a-Si:H/c-Si hetero-junction solar cells are processed by low temperature deposition of n-type hydrogenated amorphous silicon (a-Si:H) films by plasma-enhanced chemical vapor deposition on textured and flat p-type silicon substrate. A detailed investigation was carried out to acquire optimization and compatibility of amorphous layer, TCO (ZnO:Al) layer depositions by changing the plasma process parameters. As front TCO and back contact, ZnO:Al and AI were deposited by rf magnetron sputtering and e-beam evaporation, respectively. The photovoltaic conversion efficiency under AMI.5 and the quantum efficiency on $1cm^2$ sample have been reported. An efficiency of $12.5\%$ is achieved on hetero-structure solar cells based on p-type crystalline silicon.

• Journal of the Korean Institute of Telematics and Electronics
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• v.17 no.6
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• pp.65-71
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• 1980

The Sn O2-Si Heterojunction sola cells are Prepared by vacuum deposition of SnO2 on N- and P-type Si - wafers arts the effects of annealing on the Solar cell characteiistics are presented. The existence of optimumannealins temperature for maximum open-circuit voltage and short - circuit current of the solar cell is observed. The optimum tomperature, when low resistivity (7- 2.3 [$\Omega$.cm]) P-and N-type Si -wafers are used, is 500 [$^{\circ}C$] End 400 [$^{\circ}C$] when high resistivity[41-58 [$\Omega$.cm]) P-type Si-wafers are used.