• Transactions on Electrical and Electronic Materials
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• v.9 no.2
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• pp.67-72
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• 2008

Al-doped p-type ZnO thin films were fabricated by RF magnetron sputtering on n-Si (100) and homo-buffer layers in pure oxygen ambient. ZnO ceramic mixed with 2 wt% $Al_2O_3$ was selected as a sputtering target. XRD spectra show that the Al-doped ZnO thin films have ZnO crystal structure. Hall Effect experiments with Van der Pauw configuration show that p-type carrier concentrations are arranged from $1.66{\times}10^{16}$ to $4.04{\times}10^{18}\;cm^{-2}$, mobilities from 0.194 to $198\;cm^2V{-1}s^{-1}$ and resistivities from 0.0963 to $18.4\;{\Omega}cm$. FESEM cross section images of different parts of a p-type ZnO:Al thin film annealed at $800^{\circ}C$ show a compact structure. Measurement for same sample shows that density is $5.40\;cm^{-3}$ which is smaller than theoretically calculated value of $5.67\;cm^{-3}$. Photoluminescence (PL) spectra at 10 K show a shoulder peak of p-type ZnO film at about 3.117 eV which is ascribed to electron transition from donor level to acceptor level (DAP).

• Korean Journal of Materials Research
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• v.20 no.3
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• pp.155-160
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• 2010

In this study, we investigated primary biocompatibility and osteogenic gene expression of porous granular BCP bone substitutes with or without strontium (Sr) doping. In vitro biocompatibility was investigated on fibroblasts like L929 cells and osteoblasts like MG-63 cells using a cell viability assay (MTT) and one cell morphological observation by SEM, respectively. MTT results showed a cell viability percent of L929 fibroblasts, which was higher in Sr-BCP granules (98-101%) than in the non-doped granules (92-96%, p < 0.05). Osteoblasts like MG-63 cells were also found to proliferate better on Sr-doped BCP granules (01-111%) than on the non-doped ones (92-99%, p < 0.05) using an MTT assay. As compared with pure BCP granules, SEM images of MG-63 cells grown on sample surfaces confirmed that cellular spreading, adhesion and proliferation were facilitated by Sr doping on BCP. Active filopodial growth of MG-63 cells was also observed on Sr-doped BCP granules. The cells on Sr-doped BCP granules were well attached and spread out. Gene expression of osteonectin, osteopontin and osteoprotegrin were also evaluated using reverse transcriptase polymerase chain reaction (RT-PCR), which showed that the mRNA phenotypes of these genes were well maintained and expressed in Sr-doped BCP granules. These results suggest that Sr doping in a porous BCP granule can potentially enhance the biocompatibility and bone ingrowth capability of BCP biomaterials.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.192.2-192.2
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• 2014

Among various dopant candidates, nitrogen (N) atoms are considered as the most effective dopants to improve the diverse properties of graphene. Unfortunately, recent experimental and theoretical studies have revealed that different N-doped graphene (NGR) conformations can result in both p- and n-type characters depending on the bonding nature of N atoms (substitutional, pyridinic, pyrrolic, and nitrilic). To overcome this obstacle in achieving reliable graphene doping, we have carried out density functional theory calculations and explored the feasibility of converting p-type NGRs into n-type by introducing additional dopant candidates atoms (B, C, O, F, Al, Si, P, S, and Cl). Evaluating the relative formation energies of various binary-doped NGRs and the change in their electronic structure, we conclude that B and P atoms are promising candidates to achieve robust n-type NGRs. The origin of such p- to n-type change is analyzed based on the crystal orbital Hamiltonian population analysis. Implications of our findings in the context of electronic and energy device applications will be also discussed.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.122-122
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• 2010

ZnO is a widely investigated material for the blue and ultraviolet solid-state emitters and detectors. It has been promoted due to a wide-band gap semiconductor which has large exciton binding energy of 60 meV, chemical stability and low radiation damage. However, there are many problems to be solved for the growth of p-type ZnO for practical device applications. Many researchers have made an efforts to achieve p-type conductivity using group-V element of N, P, As, and Sb. In this letter, we have studied the optical characteristics of the antimony-doped ZnO (ZnO:Sb) thin films by means of photoluminescence (PL), PL excitation, temperature-dependent PL, and time-resolved PL techniques. We observed donor-to-acceptor-pair transition at about 3.24 eV with its phonon replicas with a periodic spacing of about 72 meV in the PL spectra of antimony-doped ZnO (ZnO:Sb) thin films at 12 K. We also investigate thermal activation energy and carrier recombination lifetime for the samples. Our result reflects that the antimony doping can generate shallow acceptor states, leading to a good p-type conductivity in ZnO.

• Journal of the Semiconductor & Display Technology
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• v.4 no.2 s.11
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• pp.1-5
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• 2005

Electon spin resonance measurements have been performed on the Mg-doped wurtzite GaN thin films grown on sapphire substrates by low-pressure metal-organic chemical vapor deposition. The sample set included films as-grown with the regular Mg doped and Mg delta doped samples and the corresponding annealed ones. The resonance signal has been observed from the annealed Mg delta-doped sample with the Lande g value of 2.029. This indicates that the singlet resonance signal originates from the neutral Mg acceptor located at 0.24 eV above the valence band edge and 0.13 eV above the Fermi level because of the nuclear hyperfine spin 1=0 of Mg and the larger value than the free electron g=2.0023.

• Proceedings of the IEEK Conference
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• 2002.07a
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• pp.540-541
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• 2002

In this paper, the performance of upidirectional and hi-directional regenerative erbium-doped fiber amplifier (EDFA) is compared. The systems are operating above laser oscillation threshold. The experimental results show that the unidirectional regenerative EDFA has a better performance than the hi-directional.

• The Korean Journal of Ceramics
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• v.3 no.1
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• pp.52-56
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• 1997

The Pt doped $TiO_2$ composite membranes were prepared by the sol-gel process. The Pt doped titania sol was peptized with hydrochloric acid in the pH range of 1.23 to 1.32 at 5$0^{\circ}C$. The average particle size of the Pt doped titania sol was shown to be below 15nm and well dispersed in the solution. XPS show the Pt elements continuous and homogeneous dispersed in the $TiO_2$ membrane. The mean particle size of the Pt doped $TiO_2$ composite membrane has smaller than that of the undoped $TiO_2$ composite membrane. The average pore size of the Pt doped $TiO_2$ composite membrane was increased from 58 to 193 $\AA$ with firing temperature changed from 550 to 85$0^{\circ}C$. It was observed that the Pt doped $TiO_2$ composite membranes showed crack-free and homogeneous microstructue as well as narrow particle size distribution up to above 75$0^{\circ}C$.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.18 no.6
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• pp.499-505
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• 2005

We compared the effects of a representative aromatic acid amplifier, 2-hydroxy-2'-tosylory biphenyl, doped in poly(tort-butyl methacrylate) (PTBMA), poly (tetrahydropyranylmethacrylate) (pTHPMh) or poly[tert-butoxycarbonyloxystyrene) (pTBOCST) resin film as acid labile polymer in view of thermal stability and photosensitivity enhancement. The acid amplifier was stable up to 60 min in pTBMA and pTBOCST film and up to 10 min in pTHPMA film at $120^{\circ}C$. pTBMA and pTHPMA film doped with the acid amplifier showed 9 times and 3 times higher photosensitivity, respectively. But pTBOCST film showed a negligible photosensitivity enhancement. Photosensitivity enhancement and thermal stability of the acid amplifier were found to be affected by the resin.

• Transactions on Electrical and Electronic Materials
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• v.10 no.1
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• pp.24-27
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• 2009

N-doped ZnO thin films were deposited on n-type Si(100) and homo-buffer layer, and undoped ZnO thin film was also deposited on homo-buffer layer by RF magnetron sputtering method. After deposition, all films were in-situ annealed at $800^{\circ}C$ for 5 minutes in ambient of $O_2$ with pressure of 10Torr. X -ray diffraction shows that the homo-buffer layer is beneficial to the crystalline of N-doped ZnO thin films and all films have preferable c-axis orientation. Atomic force microscopy shows that undoped ZnO thin film grown on homo-buffer layer has an evident improvement of smoothness compared with N-dope ZnO thin films. Hall-effect measurements show that all ZnO films annealed at $800^{\circ}C$ possess p-type conductivities. The undoped ZnO film has the highest carrier concentration of $1.145{\times}10^{17}cm{-3}$. The photoluminescence spectra show the emissions related to FE, DAP and many defects such as $V_{Zn}$, $Zn_O$, $O_i$ and $O_{Zn}$. The p-type defects ($O_i$, $V_{Zn}$, and $O_{Zn}$) are dominant. The undoped ZnO thin film has a better p-type conductivity compared with N-doped ZnO thin film.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.10
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• pp.814-820
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• 2009

Antimony (Sb) doped ZnO thin films (0.1 at.%) were deposited on sapphire (0001) substrates at various temperatures (200 - 600$^{\circ}C$) by using pulsed laser deposition technique. All the thin films have been characterized by X-ray diffractometer, atomic force microscopy and spectrophotometer to investigate their structural, morphological and optical properties, respectively. Hall measurements were also carried out to identify the electrical properties of the thin films. These thin films were constituted in wurtzite structure with the preferential orientation of (002) diffraction plane and had as high as 80% optical transmission in the visible range. The bandgap energy also was determined by spectrophotometer which was around 3.28 eV. Hall measurements results revealed that the Sb dope ZnO thin film (0.1 at.%) grown at $500^{\circ}C$ exhibited p-type conduction with a carrier concentration of $8.633\times10^{16}\;cm^{-3}$, a mobility of $1.41\;cm^2/V{\cdot}s$ and a resistivity of $51.8\;\Omega{\cdot}cm$. We have successfully achieved p-type conduction in antimony doped ZnO thin films with low doping level even though the electrical properties are not favorable. This paper suggests the feasibility of p-type doping with large-size-mismatched dopant by using pulsed laser deposition.