• 반도체디스플레이기술학회지
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• 제16권2호
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• pp.39-43
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• 2017

It was confirmed that the silicon thin films fabricated on the p-Si (100) substrates by using DIPAS (DiIsoPropylAminoSilane) and TDMA-Sb (Tris-DiMethylAminoAntimony) sources by RPCVD method were amorphous and n-type silicon. The fabricated amorphous n-type silicon films had electron carrier concentrations and electron mobilities ranged from $6.83{\times}10^{18}cm^{-3}$ to $1.27{\times}10^{19}cm^{-3}$ and from 62 to $89cm^2/V{\cdot}s$, respectively. The ideality factor of the pn junction diode fabricated on the p-Si (100) substrate was about 1.19 and the efficiency of the fabricated pn solar cell was 10.87%.

• 한국세라믹학회지
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• 제48권6호
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• pp.565-570
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• 2011

The $Eu^{3+}$ doped $Y(P_x,V_{1-x})O_4$ (0 ${\leq}$ x ${\leq}$ 1) phosphors were synthesized by solid-state and impregnation method and investigated as potential red-emitting phosphors for a plasma display panel(PDP). The optimal substitution proportion of P for V was determined to be 60 mol%, for $Y(P_x,V_{1-x})O_4$ doped with 8 mol% $Eu^{3+}$. The VUV PL spectra and SEM for the synthesized phosphors were measured and compared against those of a commercial red-emission phosphor. The $Y(P_x,V_{1-x})O_4$:$Eu^{3+}$ phosphors exhibited strong red at around 592, 618 and 698 nm. The emission intensity and particle size of the phosphors were controlled by preparation conditions.

• 반도체디스플레이기술학회지
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• 제19권3호
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• pp.49-54
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• 2020

We studied the electronic and magnetic properties for the Mn-doped chalcopyrite (CH) AlAs, GaAs, and AlGaAs₂ semiconductor by using the first-principles calculations. The chalcopyrite AlGaP₂, AlGaAsP, and AlGaAs₂ compounds have a semiconductor characters with a small band-gap. The interaction between Mn-3d and As-4p states at the Fermi level dominate rather than the other states. The ferromagnetic ordering of dopant Mn with high magnetic moment is induced due to the Mn(3d)-As(4p) strong coupling, which is attributed by the partially filled As-4p bands. The holes are mediated with keeping their 3d-electrons, therefore the ferromagnetic state is stabilized by this double-exchange mechanism. We noted that the ferromagnetic state with high magnetic moment is originated from the hybridized As(4p)-Mn(3d)-As(4p) interaction mediated by the holes-carrier.

• 한국전자현미경학회:학술대회논문집
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• 한국현미경학회 2004년도 제35차 추계학술대회 및 제2회 HVEM 이용자 워크샵
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• pp.66-71
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• 2004

• 한국재료학회:학술대회논문집
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• 한국재료학회 1993년도 춘계학술발표회
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• pp.112-112
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• 1993

• 한국재료학회:학술대회논문집
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• 한국재료학회 1998년도 IUMRS-ICEM ABSTRACT BOOK
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• pp.49.3-49
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• 1998

• 한국세라믹학회지
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• 제39권10호
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• pp.928-934
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• 2002

Ga을 치환 고용시킨 ZnO(GZO) 박막을 GZO 세라믹 타켓을 사용하여 직류 마그네트론 스퍼터법에 의해 기판온도(RT, 400${\circ}C$), 잔류 $H_2O$ 분압(PH2O; 1.61${\times}10^{-4}∼2.2{\times}10^{-3}$ Pa), $H_2$ 가스 첨가(8.5%), 캐소드의 자장강도(250, 1000G)등의 다양한 조건하에서 제작했다. 기판 가열 없이 100% Ar를 사용한 경우, $P_{H_2O}$가 1.61${\times}10^{-4}$ Pa에서 2.2${\times}10^{-3}$ Pa로 증가 했을 때, 박막의 결정립 크기는 24 nm에서 3 nm로 감소했으며, 비저항은 3.0${\times}10^{-3}$에서 3.1${\times}10^{-2}{\Omega}㎝$ 로 크게 증가함을 보였다. 그러나, 8.5% $H_2$를 Ar 가스에 혼합하여 제막한 결과, GZO 박막의 전기적 특성은 $P_{H_2O}$의 증가에도 불구하고 변화 없이 나타났다. 또한 캐소드의 자장강도를 250G에서 1000G로 증가시킨 경우, GZO 박막의 결정성 및 전기적 특성은 $P_{H_2O}$와 상관없이 크게 향상되었으며, 이것은 플라즈마 임피던스의 감소에 따른 박막 손상의 감소에 기인한다고 생각된다.

• 한국광학회:학술대회논문집
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• 한국광학회 2002년도 하계학술발표회
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• pp.116-117
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• 2002

In recent years, there has been an increasing interest in $Tm^{3+}$ doped crystals and glasses due to their potential applications as near infrared lasers and infrared to visible upconversion lasers for use in different fields such as medical surgery, eye safe laser radar, data storage, barcode reading and so on. Thulium ions have stable excited levels suitable for emitting blue upconversion fluorescence. (omitted)

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2008년도 International Meeting on Information Display
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• pp.1414-1417
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• 2008

Using a $Ir(ppy)_3$ doped in the TCTA:$Bepp_2$ mixed host and N- and P-doped in TCTA:$Bepp_2$ charge transport layers, an ideal energy level alignment technology is developed. A very low roll-off current efficiency of 7.4 % at a luminance of $10,000\;cd/m^2$ with this technology is demonstrated in green phosphorescent OLEDs.

• 한국전기전자재료학회논문지
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• 제28권11호
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• pp.690-693
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• 2015

In this paper, in order to develop excellent Pb-free composition ceramics for ultrasonic sensor. The $SnO_2$-doped ($Na_{0.525}K_{0.443}Li_{0.037})(Nb_{0.883}Sb_{0.08}Ta_{0.037})O_3$)(abbreviated as NKL-NST) ceramics have been synthesized using the ordinary solid state reaction method. The effect of $SnO_2$-doping on their dielectric and piezoelectric properties was investigated. The ceramics doped with 0 wt% $SnO_2$ have the optimum values of piezoelectric constant($d_{33}$), piezoelectric figure of merit($d_{33}.g_{33}$), planar piezoelectric coupling coefficient($k_p$) and density : $d_{33}=195[pC/N]$, $d_{33}.g_{33}=5.62pm^2/N.kp=0.40$, $density=4.436[g/cm^3]$. suitable for duplex ultrasonic sensor application.