• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.5
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• pp.419-424
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• 2009

ZnO films doped with different contents of indium ($0.1{\sim}10$ at.%) were deposited on Si (111) substrate by Pulsed Laser Deposition (PLD). The structural, electrical and optical properties of the films were investigated using XRD, AFM, Hall and PL measurement. Results showed that un-doped ZnO film had (002) plane as the c-axis orientated growth, whereas indium doped ZnO films exhibited the peak of (002) and the weak (101) plane. In addition, in the indium doped ZnO films, the electron concentration is ten times higher than that of un-doped ZnO film, while the resistivity is ten times lower than that of un-doped ZnO film. The indium doped ZnO films have UV emission about 380 nm and show a red shift with increasing contents of indium. The I-V curve of the fabricated diode show the typical diode characteristics and have the turn on voltage of about 2 V.

• Carbon letters
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• v.22
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• pp.60-69
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• 2017

Nitrogen-doped carbon nanosheets with a developed porous structure were prepared from polyurethane foams by hydrothermal carbonization following $ZnCl_2$ chemical activation. Scanning electron microscopy, thermogravimetric analysis, Fourier transform infrared spectroscopy, solid state $^{13}C$ nuclear magnetic resonance (NMR) spectra and X-ray photoelectron spectroscopy were used to characterize the nitrogen-doped carbon nanosheet structure and composition. The removal of Cr(VI) by the N-doped carbon nanosheets was investigated. The results showed that the maximum removal capacity for chromium of 188 mg/g was found at pH=2.0 with PHC-Z-3. pH had an important effect on Cr(VI) removal and the optimal pH was 2.0. Moreover, amino groups and carboxyl groups in the nitrogen-doped carbon nanosheet played important roles in Cr(VI) removal, and promoted the reduction of Cr(VI) to Cr(III).

• Korean Journal of Materials Research
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• v.25 no.1
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• pp.16-20
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• 2015

In this study, in order to improve the efficiency of n-type monocrystalline solar cells with an Alu-cell structure, we investigate the effect of the amount of Al paste in thin n-type monocrystalline wafers with thicknesses of $120{\mu}m$, $130{\mu}m$, $140{\mu}m$. Formation of the Al doped $p^+$ layer and wafer bowing occurred from the formation process of the Al back electrode was analyzed. Changing the amount of Al paste increased the thickness of the Al doped $p^+$ layer, and sheet resistivity decreased; however, wafer bowing increased due to the thermal expansion coefficient between the Al paste and the c-Si wafer. With the application of $5.34mg/cm^2$ of Al paste, wafer bowing in a thickness of $140{\mu}m$ reached a maximum of 2.9 mm and wafer bowing in a thickness of $120{\mu}m$ reached a maximum of 4 mm. The study's results suggest that when considering uniformity and thickness of an Al doped $p^+$ layer, sheet resistivity, and wafer bowing, the appropriate amount of Al paste for formation of the Al back electrode is $4.72mg/cm^2$ in a wafer with a thickness of $120{\mu}m$.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.21 no.3
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• pp.208-212
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• 2008

This paper reports physical properties of in situ boron doped silicon films made from boron source gas and silane ($SiH_4$) gas in a conventional low-pressure chemical vapor deposition vertical furnace. If the p-type polysilicon is formed by boron implantation into undoped polysilicon, the plasma nitridation (PN) process is added on the oxide in order to suppress boron penetration that can be caused during the thermal treatments used in fabrication. In-situ boron doped polysilicon deposition can complete p-type polysilicon film with only one deposition process and need not the PN process, because there is not interdiffusion of dopant at the intermediate temperatures of the subsequent steps. Since in-situ boron doped polysilicon films have higher work function than that of n-type polysilicon and they are compatible with the underlying oxide, they may be promising materials for improving memory cell characteristics if we make its profit of these physical properties.

• Journal of the Korean Institute of Telematics and Electronics
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• v.27 no.2
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• pp.93-97
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• 1990

Interfacil charge approximations and structures at doped semiconductor interfaces were proposed. Rectifying phenomena at the III-V compound semiconductor (p-GaP, p-InP, n-GaAs)/$CsNO_3$ aqueous electrolyte interfaces were qualitatively analyzed in terms of their cyclic current-voltage characteristics. The current-voltage characteristic curves, the ion adsorption and potential barrier processes at the semiconductor interfaces were verified using continuous cyclic voltammetric methods. The pn or np junction structures and the related rectifying types at the doped semi-condudtor-electrolyte inferfaces are determined by the space charges.

• Proceeding of EDISON Challenge
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• 2017.03a
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• pp.404-411
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• 2017

이 논문에서는 2차원 화합물 반도체인 Indium Selenide monolayer의 효과적인 도펀트 원소를 탐색해보았다. 총 4가지 종류의 원소를 도핑시켜 계산을 했다. In 자리에 Mg과 Sn을 도핑시켜 각각 p-type과 n-type으로 만들고 Se 자리에 As과 Br을 도핑시켜 각각 p-type과 n-type으로 만들었다. 변화한 성질을 알아보기 위해 전자 구조를 분석하고 band structure와 DOS를 살펴보았다. P-type 같은 경우, Mg doped InSe는 shallow defect level이 생겨 좋은 반도체로 쓰일 수 있지만 As을 도핑한 InSe는 deep defect states가 생겼다. VBM에서 약 0.67 eV만큼 떨어져있는데 이 수치는 실험값과 비슷한 값이다. N-type 경우에는 Sn doped InSe는 deep defect states가 생겼고, CBM 아래로 약 0.08eV만큼 defect가 생긴 것이 실험값과 비슷하다. Br doped InSe는 Sn doped InSe보다 안정적인 n형 반도체가 될 수 있다.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.35D no.12
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• pp.53-58
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• 1998

A buried channel poly-Si TFT (BCTFT) for application of high performance integrated circuits has been proposed and fabricated. BCTFT has unique features, such as the moderately-doped buried channel and counter-doped body region for conductivity modulation, and the fourth terminal entitled back bias for preventing kink effect. The n-type and p-type BCTFT exhibits superior performance to conventional poly-Si TFT in ON-current and field effect mobility due to moderate doping at the buried channel. The OFF-state leakage current is not increased because the carrier drift is suppressed by the p-n junction depletion between the moderately-doped buried channel and the counter-doped body region.

• Carbon letters
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• v.15 no.4
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• pp.277-281
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• 2014

A series of high capacity soft carbons with different phosphorus contents were successfully prepared by carbonizing petroleum cokes treated with hypophosphorous acid at $900^{\circ}C$. The effect of phosphorus content on the electrochemical performance of the soft carbons was extensively investigated. The P-doped soft carbons exhibited greatly enhanced discharge capacities and outstanding rate capabilities with increasing phosphorus content. In addition, the influence of temperature on the electrochemical behaviors of the soft carbons was investigated in a wide temperature range of $25^{\circ}C$ to $50^{\circ}C$. Surprisingly, the electrochemical properties of the pristine and P-doped soft carbons were highly sensitive to the operating temperature, unlike conventional graphite. The pristine and P-doped soft carbons exhibited significantly high discharge capacities of 470 and 522 mAh/g, respectively, at a high temperature of $50^{\circ}C$.

• The Korean Journal of Ceramics
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• v.4 no.2
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• pp.68-71
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• 1998

The effect of Mn and Nb additions on the electrical properties of BaTiO$_3$ has been studied by means of equilibrium electrical conductivity as a function of temperature, oxygen partial pressure(Po$_2$) and composition. If the manganese ion is added to the normal Ti site, i.e. BaTi$_{1-x}Mn_xO_{\delta-6}$, the equilibrium conductivity shows strong evidence of acceptor-doped behavior. The conductivity minimum, corresponding to the transition from oxygen excess, p-type behavior to oxygen deficient, n-type behavior with decreasing Po$_2$, is displaced to lower Po$_2$ and is broadened and flattened. The partial replacement of Mn ion with Nb decreases the acceptor-doped effect and the total replacement exhibits a typical donor-doped behavior. It was confirmed that unlike undoped or other acceptor-doped behavior. It was confirmed that unlike undoped or other acceptor-doped samples, for the p-type region, the electrical conductivity follows the 1/6th power dependence of oxygen partial pressure.

• Korean Journal of Materials Research
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• v.19 no.8
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• pp.417-420
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• 2009

This study develops a highly transparent ohmic contact using phosphorus doped ZnO with current spreading for p-GaN to increase the optical output power of nitride-based light-emitting diodes (LEDs). The phosphorus doped ZnO transparent ohmic contact layer was prepared by radio frequency magnetron sputtering with post-deposition annealing. The transmittance of the phosphorus doped ZnO exceeds 90% in the region of 440 nm to 500 nm. The specific contact resistance of the phosphorus doped ZnO on p-GaN was determined to be $7.82{\times}10^{-3}{\Omega}{\cdot}cm^2$ after annealing at $700^{\circ}C$. GaN LED chips with dimensions of $300\times300{\mu}m$ fabricated with the phosphorus doped ZnO transparent ohmic contact were developed and produced a 2.7 V increase in forward voltage under a nominal forward current of 20 mA compared to GaN LED with Ni/Au Ohmic contact. However, the output power increased by 25% at the injection current of 20 mA compared to GaN LED with the Ni/Au contact scheme.