• Journal of the Semiconductor & Display Technology
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• v.16 no.2
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• pp.39-43
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• 2017

It was confirmed that the silicon thin films fabricated on the p-Si (100) substrates by using DIPAS (DiIsoPropylAminoSilane) and TDMA-Sb (Tris-DiMethylAminoAntimony) sources by RPCVD method were amorphous and n-type silicon. The fabricated amorphous n-type silicon films had electron carrier concentrations and electron mobilities ranged from $6.83{\times}10^{18}cm^{-3}$ to $1.27{\times}10^{19}cm^{-3}$ and from 62 to $89cm^2/V{\cdot}s$, respectively. The ideality factor of the pn junction diode fabricated on the p-Si (100) substrate was about 1.19 and the efficiency of the fabricated pn solar cell was 10.87%.

• Journal of the Korean Ceramic Society
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• v.48 no.6
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• pp.565-570
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• 2011

The $Eu^{3+}$ doped $Y(P_x,V_{1-x})O_4$ (0 ${\leq}$ x ${\leq}$ 1) phosphors were synthesized by solid-state and impregnation method and investigated as potential red-emitting phosphors for a plasma display panel(PDP). The optimal substitution proportion of P for V was determined to be 60 mol%, for $Y(P_x,V_{1-x})O_4$ doped with 8 mol% $Eu^{3+}$. The VUV PL spectra and SEM for the synthesized phosphors were measured and compared against those of a commercial red-emission phosphor. The $Y(P_x,V_{1-x})O_4$:$Eu^{3+}$ phosphors exhibited strong red at around 592, 618 and 698 nm. The emission intensity and particle size of the phosphors were controlled by preparation conditions.

• Journal of the Semiconductor & Display Technology
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• v.19 no.3
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• pp.49-54
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• 2020

We studied the electronic and magnetic properties for the Mn-doped chalcopyrite (CH) AlAs, GaAs, and AlGaAs₂ semiconductor by using the first-principles calculations. The chalcopyrite AlGaP₂, AlGaAsP, and AlGaAs₂ compounds have a semiconductor characters with a small band-gap. The interaction between Mn-3d and As-4p states at the Fermi level dominate rather than the other states. The ferromagnetic ordering of dopant Mn with high magnetic moment is induced due to the Mn(3d)-As(4p) strong coupling, which is attributed by the partially filled As-4p bands. The holes are mediated with keeping their 3d-electrons, therefore the ferromagnetic state is stabilized by this double-exchange mechanism. We noted that the ferromagnetic state with high magnetic moment is originated from the hybridized As(4p)-Mn(3d)-As(4p) interaction mediated by the holes-carrier.

• 한국전자현미경학회:학술대회논문집
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• 2004.11a
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• pp.66-71
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• 2004

• Proceedings of the Materials Research Society of Korea Conference
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• 1993.05a
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• pp.112-112
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• 1993

• Proceedings of the Materials Research Society of Korea Conference
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• 1998.08a
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• pp.49.3-49
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• 1998

• Journal of the Korean Ceramic Society
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• v.39 no.10
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• pp.928-934
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• 2002

Gallium doped Zinc Oxide(GZO) films were deposited by dc magnetron sputtering using a GZO ceramic target at various conditions such as substrate temperature (RT, 400), residual water pressure ($P_{H_2O}$; 1.61${\times}10^{-4}∼2.2{\times}10^{-3}$ Pa), introduction of $H_2$ gas (8.5%) and different magnetic field strengths(250, 1000G). GZO films deposited without substrate heating showed clear degradation in film crystallinity and electrical properties with increasing $P_{H_2O}$. The resistivity increased from 3.0${\times}10^{-3}$ to 3.1${\times}10^{-2}{\Omega}㎝$ and the grain size of the films decreased from 24 to 3 nm when PH2O was increased from 1.61${\times}10^{-4}$ to 2.2${\times}10^{-3}$ Pa. However, degradation in electrical properties with increasing $P_{H_2O}$ was not observed for the films deposited with introduction of 8.5% $H_2$. When magnetic field strength of the cathode increased from 250G to 1000G, crystallinity and electrical properties of GZO films improved remarkably about all the $P_{H_2O}$. This result could be attributed to the decrease in film damage caused by the decrease in plasma impedance.

• Proceedings of the Optical Society of Korea Conference
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• 2002.07a
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• pp.116-117
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• 2002

In recent years, there has been an increasing interest in $Tm^{3+}$ doped crystals and glasses due to their potential applications as near infrared lasers and infrared to visible upconversion lasers for use in different fields such as medical surgery, eye safe laser radar, data storage, barcode reading and so on. Thulium ions have stable excited levels suitable for emitting blue upconversion fluorescence. (omitted)

• 한국정보디스플레이학회:학술대회논문집
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• 2008.10a
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• pp.1414-1417
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• 2008

Using a $Ir(ppy)_3$ doped in the TCTA:$Bepp_2$ mixed host and N- and P-doped in TCTA:$Bepp_2$ charge transport layers, an ideal energy level alignment technology is developed. A very low roll-off current efficiency of 7.4 % at a luminance of $10,000\;cd/m^2$ with this technology is demonstrated in green phosphorescent OLEDs.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.28 no.11
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• pp.690-693
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• 2015

In this paper, in order to develop excellent Pb-free composition ceramics for ultrasonic sensor. The $SnO_2$-doped ($Na_{0.525}K_{0.443}Li_{0.037})(Nb_{0.883}Sb_{0.08}Ta_{0.037})O_3$)(abbreviated as NKL-NST) ceramics have been synthesized using the ordinary solid state reaction method. The effect of $SnO_2$-doping on their dielectric and piezoelectric properties was investigated. The ceramics doped with 0 wt% $SnO_2$ have the optimum values of piezoelectric constant($d_{33}$), piezoelectric figure of merit($d_{33}.g_{33}$), planar piezoelectric coupling coefficient($k_p$) and density : $d_{33}=195[pC/N]$, $d_{33}.g_{33}=5.62pm^2/N.kp=0.40$, $density=4.436[g/cm^3]$. suitable for duplex ultrasonic sensor application.