• Journal of Magnetics
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• v.18 no.2
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• pp.81-85
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• 2013

We investigate the electronic and magnetic properties in Cu-doped InN with the N vacancy ($V_N$) from first principles calculations. There is the long-range ferromagnetic order between two Cu atoms, attributed to the hole-mediated double exchange through the strong p-d interaction between the Cu atom and neighboring N atom. The system of $V_N$ defect in Cu-doped InN has the lowest formation energy. Due to the hybridization between the Cu-3d and $V_N$ states, the spin-polarization on the Cu atoms in the InN lattice is reduced by $V_N$ defect. So, it shows a weak ferromagnetic behavior.

• 한국정보디스플레이학회:학술대회논문집
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• 2007.08a
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• pp.691-693
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• 2007

We report on a highly conductive and stable hole transporting layer comprising of N,N'-di(1- naphthyl)-N,N'-diphenylbenzidine $({\alpha}\;-NPD)$ doped with molybdenum oxide $(MoO_3)$. Compared to the reference device, the device with $MoO_3-doped$ hole transporting material exhibits higher conductivity and thermal stability. The temperature dependence of the current-voltage characteristics are studied for various $(MoO_3)$ doping concentration.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.7
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• pp.764-769
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• 2004

In order to reduce operating voltage of the GaN based blue-violet laser diodes, the effect of highly Mg doped GaN layer, which was grown below ohmic contact metals, on contact resistivity as well as operating voltage has been investigated. The addition of the highly Mg doped GaN layer greatly reduced contact resistivity of Pd/Pt/Au ohmic contacts from $5.2 \times {10}^-2 \Omegaㆍ$\textrm{cm}^2$ to 7.5 \times {10}^-4 \Omegaㆍ$\textrm{cm}^2$$. In addition, it also decreased device voltage at 20 mA by more than 3 V. Temperature- dependent sheet resistivity of the highly Mg doped GaN layer suggested that the reduction of the contact resistivity could be attributed to predominant current flow at the interface between the Pd/Pt/Au contacts and p-GaN through a deep level defect band, rather than the valence band.

• Bulletin of the Korean Chemical Society
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• v.19 no.2
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• pp.183-188
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• 1998

Incorporation of metalloporphyrins into polypyrrole (PPy) film was achieved either by electropolymerization of pyrrole in the presence of metal-tetra(sulfonatophenyl)porphyrin anion (MTSPP, M=Co, Fe) or by metalizing hydrogenated tetra(4-sulfonatophenyl)porphyrin anion (H2TSPP) doped into PPy through ion-exchange. Electrochemical reduction of oxygen on the PPy doped with metallo porphyrin (PPy-MTSPP) was studied in acidic and basic solutions. Oxygen reduction on PPy-MTSPP electrodes appeared to proceed through a 4-electron pathway as well as a 2-electron path. In acidic solutions, the overpotential for O2 reduction on PPy-CoTSPP electrode was smaller than that on gold by about 0.2 V. In basic solutions the overpotential of the PPy-CoTSPP electrode in the activation range was close to those of Au and Pt. The limiting current was close to that of Au. However, polypyrrole doped with cobalt-tetra(sulfonatophenyl)porphyrin anion (PPy-CoTSPP) or with iron-tetra(sulfonatophenyl)porphyrin anion (PPy-FeTSPP) was found to have limited potential windows at high temperatures (above 50 ℃), and hence the electrode could not be held at the oxygen reduction potentials in basic solutions (pH 13) without degradation of the polymer.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.29 no.3
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• pp.83-90
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• 2019

In this paper, Mg-doped AlN epilayers for power semiconductor devices are grown by mixed-source hydride vapor phase epitaxy. Magnesium is used as p-type dopant material in the grown AlN epilayer. The AlN epilayers on the GaN-templated sapphire substrate and GaN-templated-patterned sapphire substrate (PSS), respectively, as the base substrates for device application, were selectively grown. The surface and the crystal structures of the AlN epilayers were investigated by field emission scanning electron microscopy (FE-SEM) and high-resolution-X-ray diffraction (HR-XRD). From the X-ray photoelectron spectroscopy (XPS) and Raman spectra results, the p-type AlN epilayers grown by using the mixed-source HVPE method could be applied to power devices.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.19 no.1
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• pp.1-6
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• 2006

High performance $Si_{0.8}Ge_{0.2}$ heterostructure metal-oxide-semiconductor field effect transistors (MOSFETs) were fabricated using well-controlled delta-doping of boron and $Si_{0.8}Ge_{0.2}$/Si heterostructure epitaxal layers grown by reduced pressure chemical vapor deposition. In this paper, we report 1/f noise characteristics of the SiGe pMOSFETs measured under various bias conditions of the gate and drain voltages changing in linear operation regions. From the noise spectral density, we found that the gate and drain voltage dependence of the noise represented same features, as usually scaled with $f^{-1}$ However, 1/f noise was found to be much lower in the device with boron delta-doped layer, by a factor of $10^{-1}_10^{-2}$ in comparison with the device fabricated without delta-doped layer. 1/f noise property of delta-doped device looks important because the device may replace bipolar transistors most commonly embedded in high-frequency oscillator circuits.

• Journal of the Korean Ceramic Society
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• v.45 no.5
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• pp.297-302
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• 2008

To direct the evolution of nanostructure and immobilize ${\gamma}-Al_2O_3$ catalyst, nanocrystalline La-doped-$Al_2O_3$ powder were prepared by the sol-gel process with addition of an amphiphilic block copolymer template (pluronic P123: $(poly(ethyleneoxide)_{20}-poly(propyleneoxide)_{70}-poly(ethyleneoxide)_{20})$. The dried gel is amorphous, whereas heating at temperature above $700^{\circ}C$ leads to the formation of nanocrystalline ${\gamma}$ and ${\delta}-Al_2O_3$ and these two phases is kept until $1100^{\circ}C$. ${\alpha}-A1_2O_3 $starts to form at $1200^{\circ}C$ with $LaAl_{11}O_{18}$. The surface morphology and crystal structure has been observed by field emission scanning electron microscope (FE-SEM) and X-ray diffraction (XRD). Solid state $^{27}Al$ MAS NMR indicates two types of local environment, i.e. octahedral and tetrahedral sites. The surface area and pore size was compared among these powders using the BET nitrogen adsorption measurements.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07b
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• pp.675-678
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• 2004

[ $CuAlO_2$ ] was used as P-type transparent conducting oxide. $CuAlO_2$ ceramics was obtained from heating a stoichiometric mixture of $Cu_2O$ and $Al_2OH_3$ at $1200^{\circ}C$ for 6h. $CuAlO_2$ ceramics were doped by the rate of 0, 5, 7 and 10% of the $BeSO_4{\cdot}4H_2O$. Sintered ceramics were investigated by X-ray diffraction (XRD) and electrical measurements. The room temperature conductivity of the ceramics, which were doped with $BeSO_4{\cdot}4H_2O$ 5wt% was of the order of $3.19\times10^{-3}S\;cm^{-1}$, and the density was $4.98g/cm^3$. Therefor the conductivity and density in $BeSO+4{\cdot}4H_2O$ 5wt% were better than other cases. Additionally, Seebeck cofficient measurements revealed that these ceramics were p-type semiconductors and the ceramic conductivity increased with the growth temperature.

• Journal of the Korean Vacuum Society
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• v.3 no.3
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• pp.360-367
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• 1994

Si2H6PH3 혼합기체를 사용하여 증착된 in-situ P-doped 비정질 실리콘과 SiH4 기체를사용하여 증착한후에 As+ 이온주입에 의해 도핑시킨 다결정 실리콘 박막을 하부 전극으로 하는 캐패시터를 형성 하였다. 여기서 유전박막층은 자연산화막 화학증착된 실리콘질화막 및 질화막의 산화에 의해 형성된 O-N-O 구조를 갖는 것이었다. 두 종류의 하부전극에 따른 캐패시터의 전기적 특서을 조사하였다. 전기 적 특성으로는 정전용량, 누설전류, 절연파괴전압 및 TDDB 등이었다. 이 가운데 정전용량, 누설전류 및 절연파괴전압은 하부전극에 따라 큰 차이를 보이지않았다. 그러나 음의 전장하에서의 TDDB 특성은 in-situ P-doped 비정실 실리콘이 하부전극인 캐패시터가 As+ 이온 주입실리콘이 하부전극인 것에 비해 더우수하였다. 이와 같은 TDDB 특성의 차이는 하부전극 실리콘의 integrity 차이로 인한 자연산화막의 결함 정도의 차이에 기인하는 것 같다. 이를 뒷받침하는 것으로 투과전자현미경 단면사진으로 확인하였 다. Shallow junction을 유지하는데도 in-situ P-doped 비정실 실리콘은 만족할 만한 결과를 보이며 박 막자체의 면저항값도 낮출 수 있어 초고집적 회로의 캐패시터 전극으로서 이용될 수 있는 것으로 평가 되었다.

• Journal of Electrical Engineering and Technology
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• v.13 no.1
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• pp.387-392
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• 2018

Static characteristics of SiC (silicon carbide) lateral p-i-n diodes implemented on semi-insulating substrate without an epitaxial layer are inVestigated. On-axis SiC HPSI (high purity semi-insulating) and VDSI (Vanadium doped semi-insulating) substrates are used to fabricate the lateral p-i-n diode. The space between anode and cathode ($L_{AC}$) is Varied from 5 to $20{\mu}m$ to inVestigate the effect of intrinsic-region length on static characteristics. Maximum breakdown Voltages of HPSI and VDSI are 1117 and 841 V at $L_{AC}=20{\mu}m$, respectiVely. Due to the doped Vanadium ions in VDSI substrate, diffusion length of carriers in the VDSI substrate is less than that of the HPSI substrate. A forward Voltage drop of the diode implemented on VDSI substrate is 12 V at the forward current of $1{\mu}A$, which is higher than 2.5 V of the diode implemented on HPSI substrate.